CN107006128B - 用于在板状工件内加工至少一个凹槽或穿孔的方法 - Google Patents

用于在板状工件内加工至少一个凹槽或穿孔的方法 Download PDF

Info

Publication number
CN107006128B
CN107006128B CN201580049903.1A CN201580049903A CN107006128B CN 107006128 B CN107006128 B CN 107006128B CN 201580049903 A CN201580049903 A CN 201580049903A CN 107006128 B CN107006128 B CN 107006128B
Authority
CN
China
Prior art keywords
workpiece
laser beam
defect
defect points
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580049903.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN107006128A (zh
Inventor
N.安布罗修斯
R.奥斯特霍尔特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LPKF Laser and Electronics AG
Original Assignee
LPKF Laser and Electronics AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=54072638&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN107006128(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from DE102014113339.0A external-priority patent/DE102014113339A1/de
Application filed by LPKF Laser and Electronics AG filed Critical LPKF Laser and Electronics AG
Publication of CN107006128A publication Critical patent/CN107006128A/zh
Application granted granted Critical
Publication of CN107006128B publication Critical patent/CN107006128B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/095Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1 ns or less
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • B23K26/382Removing material by boring or cutting by boring
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00Surface treatment of glass, not in the form of fibres or filaments, by etching
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0025Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/0026Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0029Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63Vias, e.g. via plugs
    • H10W70/635Through-vias
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic materials other than metals or composite materials
    • B23K2103/54Glass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69Insulating materials thereof
    • H10W70/692Ceramics or glasses

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Ceramic Engineering (AREA)
  • Surface Treatment Of Glass (AREA)
  • Lead Frames For Integrated Circuits (AREA)
CN201580049903.1A 2014-09-16 2015-08-07 用于在板状工件内加工至少一个凹槽或穿孔的方法 Active CN107006128B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102014113339.0A DE102014113339A1 (de) 2014-09-16 2014-09-16 Verfahren zur Erzeugung von Ausnehmungen in einem Material
DE102014113339.0 2014-09-16
DE102014116291.9 2014-11-07
DE102014116291 2014-11-07
PCT/DE2015/100333 WO2016041544A1 (de) 2014-09-16 2015-08-07 Verfahren zum einbringen mindestens einer ausnehmung oder einer durchbrechung in ein plattenförmiges werkstück

Publications (2)

Publication Number Publication Date
CN107006128A CN107006128A (zh) 2017-08-01
CN107006128B true CN107006128B (zh) 2020-05-19

Family

ID=54072638

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580049903.1A Active CN107006128B (zh) 2014-09-16 2015-08-07 用于在板状工件内加工至少一个凹槽或穿孔的方法

Country Status (11)

Country Link
US (2) US11610784B2 (https=)
EP (2) EP4061101A1 (https=)
JP (2) JP6782692B2 (https=)
KR (6) KR20170044143A (https=)
CN (1) CN107006128B (https=)
ES (1) ES2923764T5 (https=)
LT (1) LT3195706T (https=)
MY (1) MY196621A (https=)
SG (2) SG10201902331XA (https=)
TW (1) TWI616939B (https=)
WO (1) WO2016041544A1 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018100299A1 (de) * 2017-01-27 2018-08-02 Schott Ag Strukturiertes plattenförmiges Glaselement und Verfahren zu dessen Herstellung
KR20190116378A (ko) 2017-03-06 2019-10-14 엘피케이에프 레이저 앤드 일렉트로닉스 악티엔게젤샤프트 전자기 방사선과 후속 에칭공정을 이용해 재료 안으로 적어도 하나의 리세스를 도입하기 위한 방법
US11072041B2 (en) 2017-03-06 2021-07-27 Lpkf Laser & Electronics Ag Method for producing a technical mask
DE102018110211A1 (de) * 2018-04-27 2019-10-31 Schott Ag Verfahren zum Erzeugen feiner Strukturen im Volumen eines Substrates aus sprödharten Material
TWI678342B (zh) * 2018-11-09 2019-12-01 財團法人工業技術研究院 形成導角的切割方法
DE102020100848B4 (de) 2019-01-29 2023-07-27 Lpkf Laser & Electronics Aktiengesellschaft Verfahren zur Mikrostrukturierung eines Glassubstrats mittels Laserstrahlung
DE102019201347B3 (de) * 2019-02-01 2020-06-18 Lpkf Laser & Electronics Ag Herstellung von metallischen Leiterbahnen an Glas
KR20210124384A (ko) * 2019-02-08 2021-10-14 코닝 인코포레이티드 펄스형 레이저 빔 초점 라인 및 증기 에칭을 사용하여 투명 워크피스를 레이저 가공하는 방법
DE102019121827A1 (de) * 2019-08-13 2021-02-18 Trumpf Laser- Und Systemtechnik Gmbh Laserätzen mit variierender Ätzselektivität
CN113594014B (zh) * 2020-04-30 2024-04-12 中微半导体设备(上海)股份有限公司 零部件、等离子体反应装置及零部件加工方法
DE102020114195A1 (de) 2020-05-27 2021-12-02 Lpkf Laser & Electronics Aktiengesellschaft Verfahren zum Einbringen einer Ausnehmung in ein Substrat
DE102020118939A1 (de) * 2020-07-17 2022-01-20 Schott Ag Glaswafer und Glaselement für Drucksensoren
CN111799169B (zh) * 2020-07-17 2024-05-28 绍兴同芯成集成电路有限公司 一种飞秒激光结合hf湿蚀刻加工tgv的工艺
DE102020120370B3 (de) 2020-08-03 2022-02-03 Infineon Technologies Ag Mems-sensor mit partikelfilter und verfahren zu seiner herstellung
KR20220019158A (ko) 2020-08-06 2022-02-16 삼성디스플레이 주식회사 윈도우 및 이를 포함하는 표시장치
EP4011846A1 (en) 2020-12-09 2022-06-15 Schott Ag Method of structuring a glass element and structured glass element produced thereby
DE102021204675B4 (de) 2021-05-07 2023-05-17 Lpkf Laser & Electronics Se Vorrichtung und Verfahren zur Zellkultivierung
CN113510364B (zh) * 2021-07-28 2022-11-25 广东工业大学 一种基于激光辅助溶解的三维空腔结构的成型方法
EP4296244A1 (de) 2022-06-21 2023-12-27 LPKF Laser & Electronics SE Substratträger aus glas zur bearbeitung eines substrats und ein verfahren zu dessen herstellung
DE102022127259B4 (de) 2022-10-18 2026-02-12 Lpkf Laser & Electronics Aktiengesellschaft Verfahren sowie Vorrichtung zur Abbildung eines Strahls auf ein Objekt und Verfahren zum Einbringen einer Öffnung in ein Werkstück mittels dieses Verfahrens
DE102023125725A1 (de) * 2023-09-22 2025-03-27 Schott Ag Laser-strukturiertes optisches Element
DE102024105120A1 (de) * 2024-02-23 2025-08-28 Lpkf Laser & Electronics Se Verfahren zur Integration und/oder Bearbeitung wenigstens eines Substrats sowie Substratstapel

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120125893A1 (en) * 2010-07-26 2012-05-24 Hamamatsu Photonics K.K. Laser processing method
US20120125887A1 (en) * 2010-07-26 2012-05-24 Hamamatsu Photonics K.K. Method for manufacturing light-absorbing substrate and method for manufacturing mold for making same
US20120142186A1 (en) * 2010-07-26 2012-06-07 Hamamatsu Photonics K.K. Method for manufacturing interposer
US20130029093A1 (en) * 2010-04-08 2013-01-31 Fujikura Ltd. Method of forming microstructure, laser irradiation device, and substrate
US20130126573A1 (en) * 2010-07-12 2013-05-23 Filaser Inc. Method of material processing by laser filamentation

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001015819A1 (en) * 1999-08-30 2001-03-08 Board Of Regents University Of Nebraska-Lincoln Three-dimensional electrical interconnects
JP4880820B2 (ja) 2001-01-19 2012-02-22 株式会社レーザーシステム レーザ支援加工方法
JP4418282B2 (ja) 2004-03-31 2010-02-17 株式会社レーザーシステム レーザ加工方法
JP4222296B2 (ja) 2004-11-22 2009-02-12 住友電気工業株式会社 レーザ加工方法とレーザ加工装置
US9138913B2 (en) 2005-09-08 2015-09-22 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
DE102010025966B4 (de) 2010-07-02 2012-03-08 Schott Ag Interposer und Verfahren zum Herstellen von Löchern in einem Interposer
EP2599577A4 (en) * 2010-07-26 2016-06-15 Hamamatsu Photonics Kk LASER PROCESSING
US8933367B2 (en) 2011-02-09 2015-01-13 Sumitomo Electric Industries, Ltd. Laser processing method
JP6333282B2 (ja) * 2012-11-29 2018-05-30 コーニング インコーポレイテッド レーザー損傷及びエッチングによってガラス物品を製造する方法
EP2754524B1 (de) 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie
JP6113529B2 (ja) * 2013-03-05 2017-04-12 株式会社ディスコ ウエーハの加工方法
DE102013223637B4 (de) 2013-11-20 2018-02-01 Trumpf Laser- Und Systemtechnik Gmbh Verfahren zum Behandeln eines lasertransparenten Substrats zum anschließenden Trennen des Substrats
US9517963B2 (en) 2013-12-17 2016-12-13 Corning Incorporated Method for rapid laser drilling of holes in glass and products made therefrom
JP2019535619A (ja) * 2016-11-04 2019-12-12 コーニング インコーポレイテッド 微細穿孔板システム、用途、および微細穿孔板システムを作る方法
US11344973B2 (en) * 2018-04-19 2022-05-31 Corning Incorporated Methods for forming holes in substrates

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130029093A1 (en) * 2010-04-08 2013-01-31 Fujikura Ltd. Method of forming microstructure, laser irradiation device, and substrate
US20130126573A1 (en) * 2010-07-12 2013-05-23 Filaser Inc. Method of material processing by laser filamentation
US20120125893A1 (en) * 2010-07-26 2012-05-24 Hamamatsu Photonics K.K. Laser processing method
US20120125887A1 (en) * 2010-07-26 2012-05-24 Hamamatsu Photonics K.K. Method for manufacturing light-absorbing substrate and method for manufacturing mold for making same
US20120142186A1 (en) * 2010-07-26 2012-06-07 Hamamatsu Photonics K.K. Method for manufacturing interposer

Also Published As

Publication number Publication date
KR20170044143A (ko) 2017-04-24
JP2020185613A (ja) 2020-11-19
JP2017534458A (ja) 2017-11-24
MY196621A (en) 2023-04-23
EP3195706B1 (de) 2022-06-01
US20170256422A1 (en) 2017-09-07
US12604743B2 (en) 2026-04-14
SG11201702091WA (en) 2017-04-27
JP7049404B2 (ja) 2022-04-06
JP6782692B2 (ja) 2020-11-11
CN107006128A (zh) 2017-08-01
KR20250133802A (ko) 2025-09-08
TWI616939B (zh) 2018-03-01
US20220223434A1 (en) 2022-07-14
KR102813417B1 (ko) 2025-05-29
WO2016041544A1 (de) 2016-03-24
SG10201902331XA (en) 2019-04-29
KR102851778B1 (ko) 2025-09-01
TW201621986A (zh) 2016-06-16
ES2923764T3 (es) 2022-09-30
ES2923764T5 (en) 2025-10-09
US11610784B2 (en) 2023-03-21
KR20210022773A (ko) 2021-03-03
KR20230084606A (ko) 2023-06-13
KR20250079054A (ko) 2025-06-04
KR20190065480A (ko) 2019-06-11
EP3195706B2 (de) 2025-05-14
EP3195706A1 (de) 2017-07-26
LT3195706T (lt) 2022-08-10
EP4061101A1 (de) 2022-09-21

Similar Documents

Publication Publication Date Title
CN107006128B (zh) 用于在板状工件内加工至少一个凹槽或穿孔的方法
CN110382160B (zh) 用于借助电磁射线和随后的蚀刻过程将至少一个凹空开设到材料中的方法
KR101857335B1 (ko) 기판 안으로 관통 개구부들을 도입하기 위한 방법 및 장치, 그리고 이렇게 제조된 기판
KR101857336B1 (ko) 기판을 분리시키기 위한 방법 및 장치
CN104768698B (zh) 用于通过超短聚焦脉冲激光束制造线状成列的破坏部位的方法
CN103025478B (zh) 基板加工方法
JP7098093B2 (ja) プリント基板のレーザ加工方法およびプリント基板のレーザ加工機
JP2023523031A (ja) 凹部を基板中に生成するための方法
JP2020108904A5 (https=)
JP2021106229A (ja) 貫通孔とくり抜き部を有するガラス基板とその製造方法
JP2019109411A (ja) 液晶パネル製造方法
JP2022077918A (ja) 貫通孔形成方法及び貫通孔を備える物品の製造方法
JP2019120738A (ja) 液晶パネル製造方法
JP2005086131A (ja) セラミック電子部品の製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant