TWI616939B - 一種用於將至少一凹槽或一穿孔做入一板狀工件的方法 - Google Patents

一種用於將至少一凹槽或一穿孔做入一板狀工件的方法 Download PDF

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Publication number
TWI616939B
TWI616939B TW104129751A TW104129751A TWI616939B TW I616939 B TWI616939 B TW I616939B TW 104129751 A TW104129751 A TW 104129751A TW 104129751 A TW104129751 A TW 104129751A TW I616939 B TWI616939 B TW I616939B
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TW
Taiwan
Prior art keywords
workpiece
laser radiation
perforation
groove
along
Prior art date
Application number
TW104129751A
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English (en)
Chinese (zh)
Other versions
TW201621986A (zh
Inventor
諾伯特 雅姆伯修斯
Norbert AMBROSIUS
羅曼 歐斯拓特
Roman Ostholt
Original Assignee
Ｌｐｋｆ雷射暨電子股份公司
Lpkf Laser & Electronics Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=54072638&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI616939(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from DE102014113339.0A external-priority patent/DE102014113339A1/de
Application filed by Ｌｐｋｆ雷射暨電子股份公司, Lpkf Laser & Electronics Ag filed Critical Ｌｐｋｆ雷射暨電子股份公司
Publication of TW201621986A publication Critical patent/TW201621986A/zh
Application granted granted Critical
Publication of TWI616939B publication Critical patent/TWI616939B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/095—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0029—Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1 ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/54—Glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Ceramic Engineering (AREA)
  • Surface Treatment Of Glass (AREA)
  • Lead Frames For Integrated Circuits (AREA)
TW104129751A 2014-09-16 2015-09-09 一種用於將至少一凹槽或一穿孔做入一板狀工件的方法 TWI616939B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102014113339.0A DE102014113339A1 (de) 2014-09-16 2014-09-16 Verfahren zur Erzeugung von Ausnehmungen in einem Material
DE102014113339.0 2014-09-16
DE102014116291.9 2014-11-07
DE102014116291 2014-11-07

Publications (2)

Publication Number Publication Date
TW201621986A TW201621986A (zh) 2016-06-16
TWI616939B true TWI616939B (zh) 2018-03-01

Family

ID=54072638

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104129751A TWI616939B (zh) 2014-09-16 2015-09-09 一種用於將至少一凹槽或一穿孔做入一板狀工件的方法

Country Status (11)

Country Link
US (2) US11610784B2 (https=)
EP (2) EP4061101A1 (https=)
JP (2) JP6782692B2 (https=)
KR (6) KR20170044143A (https=)
CN (1) CN107006128B (https=)
ES (1) ES2923764T5 (https=)
LT (1) LT3195706T (https=)
MY (1) MY196621A (https=)
SG (2) SG10201902331XA (https=)
TW (1) TWI616939B (https=)
WO (1) WO2016041544A1 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018100299A1 (de) * 2017-01-27 2018-08-02 Schott Ag Strukturiertes plattenförmiges Glaselement und Verfahren zu dessen Herstellung
KR20190116378A (ko) 2017-03-06 2019-10-14 엘피케이에프 레이저 앤드 일렉트로닉스 악티엔게젤샤프트 전자기 방사선과 후속 에칭공정을 이용해 재료 안으로 적어도 하나의 리세스를 도입하기 위한 방법
US11072041B2 (en) 2017-03-06 2021-07-27 Lpkf Laser & Electronics Ag Method for producing a technical mask
DE102018110211A1 (de) * 2018-04-27 2019-10-31 Schott Ag Verfahren zum Erzeugen feiner Strukturen im Volumen eines Substrates aus sprödharten Material
TWI678342B (zh) * 2018-11-09 2019-12-01 財團法人工業技術研究院 形成導角的切割方法
DE102020100848B4 (de) 2019-01-29 2023-07-27 Lpkf Laser & Electronics Aktiengesellschaft Verfahren zur Mikrostrukturierung eines Glassubstrats mittels Laserstrahlung
DE102019201347B3 (de) * 2019-02-01 2020-06-18 Lpkf Laser & Electronics Ag Herstellung von metallischen Leiterbahnen an Glas
KR20210124384A (ko) * 2019-02-08 2021-10-14 코닝 인코포레이티드 펄스형 레이저 빔 초점 라인 및 증기 에칭을 사용하여 투명 워크피스를 레이저 가공하는 방법
DE102019121827A1 (de) * 2019-08-13 2021-02-18 Trumpf Laser- Und Systemtechnik Gmbh Laserätzen mit variierender Ätzselektivität
CN113594014B (zh) * 2020-04-30 2024-04-12 中微半导体设备(上海)股份有限公司 零部件、等离子体反应装置及零部件加工方法
DE102020114195A1 (de) 2020-05-27 2021-12-02 Lpkf Laser & Electronics Aktiengesellschaft Verfahren zum Einbringen einer Ausnehmung in ein Substrat
DE102020118939A1 (de) * 2020-07-17 2022-01-20 Schott Ag Glaswafer und Glaselement für Drucksensoren
CN111799169B (zh) * 2020-07-17 2024-05-28 绍兴同芯成集成电路有限公司 一种飞秒激光结合hf湿蚀刻加工tgv的工艺
DE102020120370B3 (de) 2020-08-03 2022-02-03 Infineon Technologies Ag Mems-sensor mit partikelfilter und verfahren zu seiner herstellung
KR20220019158A (ko) 2020-08-06 2022-02-16 삼성디스플레이 주식회사 윈도우 및 이를 포함하는 표시장치
EP4011846A1 (en) 2020-12-09 2022-06-15 Schott Ag Method of structuring a glass element and structured glass element produced thereby
DE102021204675B4 (de) 2021-05-07 2023-05-17 Lpkf Laser & Electronics Se Vorrichtung und Verfahren zur Zellkultivierung
CN113510364B (zh) * 2021-07-28 2022-11-25 广东工业大学 一种基于激光辅助溶解的三维空腔结构的成型方法
EP4296244A1 (de) 2022-06-21 2023-12-27 LPKF Laser & Electronics SE Substratträger aus glas zur bearbeitung eines substrats und ein verfahren zu dessen herstellung
DE102022127259B4 (de) 2022-10-18 2026-02-12 Lpkf Laser & Electronics Aktiengesellschaft Verfahren sowie Vorrichtung zur Abbildung eines Strahls auf ein Objekt und Verfahren zum Einbringen einer Öffnung in ein Werkstück mittels dieses Verfahrens
DE102023125725A1 (de) * 2023-09-22 2025-03-27 Schott Ag Laser-strukturiertes optisches Element
DE102024105120A1 (de) * 2024-02-23 2025-08-28 Lpkf Laser & Electronics Se Verfahren zur Integration und/oder Bearbeitung wenigstens eines Substrats sowie Substratstapel

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120142186A1 (en) * 2010-07-26 2012-06-07 Hamamatsu Photonics K.K. Method for manufacturing interposer
US20130029093A1 (en) * 2010-04-08 2013-01-31 Fujikura Ltd. Method of forming microstructure, laser irradiation device, and substrate

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001015819A1 (en) * 1999-08-30 2001-03-08 Board Of Regents University Of Nebraska-Lincoln Three-dimensional electrical interconnects
JP4880820B2 (ja) 2001-01-19 2012-02-22 株式会社レーザーシステム レーザ支援加工方法
JP4418282B2 (ja) 2004-03-31 2010-02-17 株式会社レーザーシステム レーザ加工方法
JP4222296B2 (ja) 2004-11-22 2009-02-12 住友電気工業株式会社 レーザ加工方法とレーザ加工装置
US9138913B2 (en) 2005-09-08 2015-09-22 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
DE102010025966B4 (de) 2010-07-02 2012-03-08 Schott Ag Interposer und Verfahren zum Herstellen von Löchern in einem Interposer
AU2011279374A1 (en) 2010-07-12 2013-02-07 Filaser Usa Llc Method of material processing by laser filamentation
KR102000031B1 (ko) * 2010-07-26 2019-07-15 하마마츠 포토닉스 가부시키가이샤 레이저 가공 방법
EP2599577A4 (en) * 2010-07-26 2016-06-15 Hamamatsu Photonics Kk LASER PROCESSING
JP5508533B2 (ja) * 2010-07-26 2014-06-04 浜松ホトニクス株式会社 光吸収基板の製造方法、及びそれを製造するための成形型の製造方法
US8933367B2 (en) 2011-02-09 2015-01-13 Sumitomo Electric Industries, Ltd. Laser processing method
JP6333282B2 (ja) * 2012-11-29 2018-05-30 コーニング インコーポレイテッド レーザー損傷及びエッチングによってガラス物品を製造する方法
EP2754524B1 (de) 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie
JP6113529B2 (ja) * 2013-03-05 2017-04-12 株式会社ディスコ ウエーハの加工方法
DE102013223637B4 (de) 2013-11-20 2018-02-01 Trumpf Laser- Und Systemtechnik Gmbh Verfahren zum Behandeln eines lasertransparenten Substrats zum anschließenden Trennen des Substrats
US9517963B2 (en) 2013-12-17 2016-12-13 Corning Incorporated Method for rapid laser drilling of holes in glass and products made therefrom
JP2019535619A (ja) * 2016-11-04 2019-12-12 コーニング インコーポレイテッド 微細穿孔板システム、用途、および微細穿孔板システムを作る方法
US11344973B2 (en) * 2018-04-19 2022-05-31 Corning Incorporated Methods for forming holes in substrates

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130029093A1 (en) * 2010-04-08 2013-01-31 Fujikura Ltd. Method of forming microstructure, laser irradiation device, and substrate
US20120142186A1 (en) * 2010-07-26 2012-06-07 Hamamatsu Photonics K.K. Method for manufacturing interposer

Also Published As

Publication number Publication date
KR20170044143A (ko) 2017-04-24
JP2020185613A (ja) 2020-11-19
JP2017534458A (ja) 2017-11-24
MY196621A (en) 2023-04-23
EP3195706B1 (de) 2022-06-01
US20170256422A1 (en) 2017-09-07
US12604743B2 (en) 2026-04-14
SG11201702091WA (en) 2017-04-27
JP7049404B2 (ja) 2022-04-06
JP6782692B2 (ja) 2020-11-11
CN107006128A (zh) 2017-08-01
KR20250133802A (ko) 2025-09-08
US20220223434A1 (en) 2022-07-14
KR102813417B1 (ko) 2025-05-29
WO2016041544A1 (de) 2016-03-24
CN107006128B (zh) 2020-05-19
SG10201902331XA (en) 2019-04-29
KR102851778B1 (ko) 2025-09-01
TW201621986A (zh) 2016-06-16
ES2923764T3 (es) 2022-09-30
ES2923764T5 (en) 2025-10-09
US11610784B2 (en) 2023-03-21
KR20210022773A (ko) 2021-03-03
KR20230084606A (ko) 2023-06-13
KR20250079054A (ko) 2025-06-04
KR20190065480A (ko) 2019-06-11
EP3195706B2 (de) 2025-05-14
EP3195706A1 (de) 2017-07-26
LT3195706T (lt) 2022-08-10
EP4061101A1 (de) 2022-09-21

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