CN107005220B - 自身发热降低的baw谐振器、具有baw谐振器的高频滤波器、具有高频滤波器的双工器以及制造方法 - Google Patents

自身发热降低的baw谐振器、具有baw谐振器的高频滤波器、具有高频滤波器的双工器以及制造方法 Download PDF

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Publication number
CN107005220B
CN107005220B CN201580061603.5A CN201580061603A CN107005220B CN 107005220 B CN107005220 B CN 107005220B CN 201580061603 A CN201580061603 A CN 201580061603A CN 107005220 B CN107005220 B CN 107005220B
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China
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thermal conductivity
layer
carrier substrate
electro
active region
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Expired - Fee Related
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CN201580061603.5A
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Chinese (zh)
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CN107005220A (zh
Inventor
安德烈亚斯·塔
伯恩哈德·巴德
马克西米利安·皮希
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Qualcomm MEMS Technologies Inc
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Qualcomm MEMS Technologies Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/703—Networks using bulk acoustic wave devices
    • H03H9/706—Duplexers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
CN201580061603.5A 2014-11-25 2015-11-10 自身发热降低的baw谐振器、具有baw谐振器的高频滤波器、具有高频滤波器的双工器以及制造方法 Expired - Fee Related CN107005220B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014117238.8A DE102014117238B4 (de) 2014-11-25 2014-11-25 BAW-Resonator mit verringerter Eigenerwärmung, HF-Filter mit BAW-Resonator, Duplexer mit HF-Filter und Verfahren zur Herstellung
DE102014117238.8 2014-11-25
PCT/EP2015/076197 WO2016083121A1 (de) 2014-11-25 2015-11-10 Baw-resonator mit verringerter eigenerwärmung, hf-filter mit baw-resonator, duplexer mit hf-filter und verfahren zur herstellung

Publications (2)

Publication Number Publication Date
CN107005220A CN107005220A (zh) 2017-08-01
CN107005220B true CN107005220B (zh) 2020-05-08

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CN201580061603.5A Expired - Fee Related CN107005220B (zh) 2014-11-25 2015-11-10 自身发热降低的baw谐振器、具有baw谐振器的高频滤波器、具有高频滤波器的双工器以及制造方法

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US (1) US10298202B2 (enExample)
EP (1) EP3224946A1 (enExample)
JP (1) JP6668347B2 (enExample)
CN (1) CN107005220B (enExample)
DE (1) DE102014117238B4 (enExample)
WO (1) WO2016083121A1 (enExample)

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DE102017129160B3 (de) * 2017-12-07 2019-01-31 RF360 Europe GmbH Elektroakustisches Resonatorbauelement und Verfahren zu dessen Herstellung
CN111342797B (zh) * 2018-12-18 2025-10-17 天津大学 压电滤波器及具有其的电子设备
DE102018132890B4 (de) * 2018-12-19 2020-08-06 RF360 Europe GmbH Mikroakustische Vorrichtung und Herstellungsverfahren
CN111384907B (zh) * 2018-12-29 2023-07-18 开元通信技术（厦门）有限公司 体声波谐振器及其制作方法、滤波器、双工器
CN111010114B (zh) * 2019-08-09 2023-10-27 天津大学 带吸热与散热结构的体声波谐振器、滤波器和电子设备
US11362638B2 (en) 2020-08-19 2022-06-14 RF360 Europe GmbH Bulk acoustic wave resonator with a heatsink region and electrical insulator region
EP4200981A1 (en) * 2020-09-14 2023-06-28 Huawei Technologies Co., Ltd. Solidly mounted bulk acoustic wave resonator with frequency tuning by mass loading in acoustic reflector and method of manufacturing thereof
JPWO2023190673A1 (enExample) 2022-03-31 2023-10-05

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JP3889351B2 (ja) * 2002-12-11 2007-03-07 Ｔｄｋ株式会社 デュプレクサ
JP4624659B2 (ja) * 2003-09-30 2011-02-02 パナソニック株式会社 超音波探触子
US6992400B2 (en) 2004-01-30 2006-01-31 Nokia Corporation Encapsulated electronics device with improved heat dissipation
JP4697517B2 (ja) * 2004-12-16 2011-06-08 株式会社村田製作所 圧電薄膜共振子およびその製造方法
US7378781B2 (en) * 2005-09-07 2008-05-27 Nokia Corporation Acoustic wave resonator with integrated temperature control for oscillator purposes
JP4835238B2 (ja) * 2006-04-06 2011-12-14 ソニー株式会社 共振器、共振器の製造方法および通信装置
JP4975377B2 (ja) * 2006-06-06 2012-07-11 太陽誘電株式会社 弾性境界波素子、共振器およびフィルタ
US7463118B2 (en) * 2006-06-09 2008-12-09 Texas Instruments Incorporated Piezoelectric resonator with an efficient all-dielectric Bragg reflector
JP2008035358A (ja) * 2006-07-31 2008-02-14 Hitachi Media Electoronics Co Ltd 薄膜圧電バルク波共振器及びそれを用いた高周波フィルタ
JP4895323B2 (ja) * 2006-10-27 2012-03-14 宇部興産株式会社 薄膜圧電共振器
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JP5013227B2 (ja) 2007-04-11 2012-08-29 株式会社村田製作所 圧電薄膜フィルタ
JP5031450B2 (ja) * 2007-06-12 2012-09-19 富士フイルム株式会社 複合圧電材料、超音波探触子、超音波内視鏡、及び、超音波診断装置
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US8610333B2 (en) * 2010-09-24 2013-12-17 Wei Pang Acoustic wave devices
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Also Published As

Publication number Publication date
JP6668347B2 (ja) 2020-03-18
US10298202B2 (en) 2019-05-21
DE102014117238B4 (de) 2017-11-02
CN107005220A (zh) 2017-08-01
US20170272053A1 (en) 2017-09-21
WO2016083121A1 (de) 2016-06-02
JP2017536049A (ja) 2017-11-30
EP3224946A1 (de) 2017-10-04
DE102014117238A1 (de) 2016-05-25

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