CN107005202B - 互补共栅和共源放大器中的增益控制 - Google Patents

互补共栅和共源放大器中的增益控制 Download PDF

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Publication number
CN107005202B
CN107005202B CN201580067877.5A CN201580067877A CN107005202B CN 107005202 B CN107005202 B CN 107005202B CN 201580067877 A CN201580067877 A CN 201580067877A CN 107005202 B CN107005202 B CN 107005202B
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China
Prior art keywords
signal
current
gain
amplifier stage
transistor
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Expired - Fee Related
Application number
CN201580067877.5A
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English (en)
Chinese (zh)
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CN107005202A (zh
Inventor
C-F·廖
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H03F1/0272—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the output signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/26—Push-pull amplifiers; Phase-splitters therefor
    • H03F3/265—Push-pull amplifiers; Phase-splitters therefor with field-effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45636—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedback means
    • H03F3/45641—Measuring at the loading circuit of the differential amplifier
    • H03F3/45654—Controlling the active amplifying circuit of the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements using field-effect transistors [FET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/54—Two or more capacitor coupled amplifier stages in cascade
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/72—Indexing scheme relating to amplifiers the amplifier stage being a common gate configuration MOSFET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45228—A transformer being added at the output or the load circuit of the dif amp
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45731—Indexing scheme relating to differential amplifiers the LC comprising a transformer

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)
CN201580067877.5A 2014-12-18 2015-11-17 互补共栅和共源放大器中的增益控制 Expired - Fee Related CN107005202B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/575,851 US9407226B2 (en) 2014-12-18 2014-12-18 Gain control in complementary common gate and common source amplifiers
US14/575,851 2014-12-18
PCT/US2015/061142 WO2016099754A1 (en) 2014-12-18 2015-11-17 Gain control in complementary common gate and common source amplifiers

Publications (2)

Publication Number Publication Date
CN107005202A CN107005202A (zh) 2017-08-01
CN107005202B true CN107005202B (zh) 2020-10-30

Family

ID=54704153

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580067877.5A Expired - Fee Related CN107005202B (zh) 2014-12-18 2015-11-17 互补共栅和共源放大器中的增益控制

Country Status (7)

Country Link
US (1) US9407226B2 (cg-RX-API-DMAC10.html)
EP (1) EP3235123A1 (cg-RX-API-DMAC10.html)
JP (1) JP2018504032A (cg-RX-API-DMAC10.html)
KR (1) KR20170096111A (cg-RX-API-DMAC10.html)
CN (1) CN107005202B (cg-RX-API-DMAC10.html)
BR (1) BR112017012672A2 (cg-RX-API-DMAC10.html)
WO (1) WO2016099754A1 (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250141476A1 (en) * 2023-10-30 2025-05-01 Qualcomm Incorporated Controlling receiver gain for proactive jammer protection from transmit signal of integrated transmitter

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9417641B2 (en) * 2013-11-04 2016-08-16 Marvell World Trade, Ltd. Memory effect reduction using low impedance biasing
CN106849885B (zh) * 2017-03-28 2023-11-21 常州无线电厂有限公司 一种低噪声高线性放大器
KR102595794B1 (ko) 2018-08-31 2023-10-30 삼성전자주식회사 송신 장치에서 전력을 증폭하기 위한 장치 및 방법
US11165398B2 (en) * 2018-10-31 2021-11-02 Texas Instruments Incorporated Chopper-stabilized programmable gain amplifier
US11095334B1 (en) 2020-09-22 2021-08-17 Apple Inc. Amplifier circuitry for carrier aggregation
CN112332781B (zh) * 2020-11-03 2022-10-18 湖南师范大学 一种基于变压器和互补共源共栅混合拓扑的宽带混频器
US11588447B2 (en) * 2020-12-21 2023-02-21 Psemi Corporation Source switch split LNA design with thin cascodes and high supply voltage
TWI774512B (zh) * 2021-08-11 2022-08-11 瑞昱半導體股份有限公司 功率放大器電路
US12431848B2 (en) * 2022-06-06 2025-09-30 Mediatek Singapore Pte. Ltd. Push-pull power amplifier
US20240430662A1 (en) * 2023-06-20 2024-12-26 Qualcomm Incorporated Split lna with different gains for multiple subscriber identity module (sim) operation

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1773844A (zh) * 2004-11-11 2006-05-17 三星电子株式会社 可变增益放大器
CN101908863A (zh) * 2009-06-08 2010-12-08 联发科技股份有限公司 可编程增益mos放大器
WO2013100463A1 (en) * 2011-12-28 2013-07-04 Samsung Electronics Co., Ltd. Apparatus and method for gain of driver amplifier exponential variable in wireless transmitter

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7263342B2 (en) * 2004-08-30 2007-08-28 Wilinx, Inc. High frequency wireless receiver circuits and methods
US7729672B2 (en) 2006-03-22 2010-06-01 Qualcomm, Incorporated Dynamic bias control in power amplifier
US7420386B2 (en) 2006-04-06 2008-09-02 Altera Corporation Techniques for providing flexible on-chip termination control on integrated circuits
JP4710849B2 (ja) * 2007-02-27 2011-06-29 ソニー株式会社 増幅回路、受信機および受信機用ｉｃ
US7671686B2 (en) * 2007-10-24 2010-03-02 Industrial Technology Research Institute Low noise amplifier
US7952430B1 (en) * 2009-09-10 2011-05-31 Mediatek Singapore Pte. Ltd. Amplifier circuit, integrated circuit and radio frequency communication unit
TWI352500B (en) 2009-09-16 2011-11-11 Ind Tech Res Inst Balun amplifier
US8577325B2 (en) 2010-08-31 2013-11-05 Korea Advanced Institute Of Science And Technology Low noise amplifier having both ultra-high linearity and low noise characteristic and radio receiver including the same
US8456237B2 (en) 2011-03-23 2013-06-04 Integrated Device Technology, Inc. Low noise variable gain amplifier utilizing variable feedback techniques with constant input/output impedance
US8989688B2 (en) 2012-12-18 2015-03-24 Broadcom Corporation Low-noise TIA-to-ADC interface with a wide-range of passive gain control
US9184707B2 (en) 2013-01-17 2015-11-10 Qualcomm Incorporated Amplifier with switchable common gate gain buffer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1773844A (zh) * 2004-11-11 2006-05-17 三星电子株式会社 可变增益放大器
CN101908863A (zh) * 2009-06-08 2010-12-08 联发科技股份有限公司 可编程增益mos放大器
WO2013100463A1 (en) * 2011-12-28 2013-07-04 Samsung Electronics Co., Ltd. Apparatus and method for gain of driver amplifier exponential variable in wireless transmitter

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
A Receiver Front-End with Variable-Gain Control for WiMAX Applications;Tzu-Lun Chiu等;《Proceedings of Asia-Pacific Microwave Conference 2010》;20101207;354-357 *
EXPLOITING THE COMMON-MODE SIGNAL IN xDSL;Thomas Magesacher等;《2004 12th European Signal Processing Conference》;20040906;1217-1220 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250141476A1 (en) * 2023-10-30 2025-05-01 Qualcomm Incorporated Controlling receiver gain for proactive jammer protection from transmit signal of integrated transmitter
US12706622B2 (en) * 2023-10-30 2026-08-11 Qualcomm Incorporated Controlling receiver gain for proactive jammer protection from transmit signal of integrated transmitter

Also Published As

Publication number Publication date
US20160182000A1 (en) 2016-06-23
EP3235123A1 (en) 2017-10-25
BR112017012672A2 (pt) 2018-03-13
JP2018504032A (ja) 2018-02-08
US9407226B2 (en) 2016-08-02
KR20170096111A (ko) 2017-08-23
CN107005202A (zh) 2017-08-01
WO2016099754A1 (en) 2016-06-23

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