CN106996798A - 量具和具有这种量具的位置测量装置 - Google Patents
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Abstract
本发明涉及量具和具有所述量具的位置测量装置。描述具有振幅光栅的量具,所述量具用于具有光学扫描的位置测量装置,所述量具具有载体(T),反射层(S)布置在所述载体(T)上,接着是透明的间隔层(A),对于结构化成光栅的部分透明层(M)布置在所述间隔层(A)上,部分透明层(M)限定亮暗模式,其中具有部分透明层(M)的区域显得暗,而没有部分透明层(M)的区域显得亮。密封层(V)布置在结构化的部分透明层(M)上。在此适用的是,针对间隔层(A)和密封层(V)的折射率(nA、nV)和层厚(dA、dV)的乘积(nAdA、nVdV)是相同的,或者相差奇数倍。
Description
技术领域
本发明涉及用于光学位置测量装置的量具(Maßverkörperung)以及具有这种量具的位置测量装置。在位置测量装置中,这样的量具由扫描头(Abtastkopf)借助于光来扫描,以便检测在量具和扫描头之间的位移。
背景技术
由DE 10236788 A1已知振幅光栅形式的量具。所述振幅光栅(Amplitudengitter)包括衬底,反射层布置在所述衬底上。在所述反射层之后是透明的间隔层,部分透明层又沉积在所述间隔层上。所述部分透明层通过部分地移除被结构化。入射到所述部分透明层上的光部分地被反射和被透射(transmittiert)。所反射的光通过与由下面的反射层反射回的所透射的光相消干涉而被消除(ausgelöscht),使得量具这里显得暗,而在缺少部分透明层的区域中,量具显得亮。
透明的间隔层为此(在简化地假定在空气-部分透明层、空气-间隔层以及间隔层-反射层界面处的刚好π的相突变和可忽略的吸收的情况下)必须产生π的相差,也即(在垂直的光入射的情况下)具有厚度,所述厚度与间隔层的折射率相乘地对应于为了扫描所使用的光的波长的四分之一部分。当然在亮区域中,光也在一定部分上在空气与间隔层的界面处被反射,使得所述所反射的光同样与在反射层处反射的光相消干涉。亮区域由此显得不那么亮,振幅光栅的亮暗对比度被降低。附加的是,部分透明层优选地由非常薄的(几纳米)金属层组成,所述金属层遭受化学的以及机械的影响,并且因此可能被损坏或者可能在其光学特性方面发生变化。
发明内容
本发明的任务是,在光学特性和相对于环境影响的稳定性方面进一步改善由现有技术已知的量具和/或装备有所述量具的位置测量装置。
通过按照权利要求1所述的量具和/或通过按照权利要求7所述的位置测量装置来解决所述任务。由从属权利要求也得出有利的细节。
描述用于具有光学扫描的位置测量装置的量具,所述量具具有载体,反射层布置在所述载体上,接着是透明的间隔层,例如结构化成光栅的部分透明层布置在所述间隔层上。部分透明层限定亮暗模式,其中具有部分透明层的区域显得暗,而没有部分透明层的区域显得亮。密封层布置在结构化的部分透明层上。在此适用的是,对于间隔层和密封层的光程长度(也即折射率和层厚的乘积)分别近似相同或者相差奇数倍。
在一种特别优选的实施方式中,不仅间隔层而且密封层由相同的材料、也即二氧化硅组成。两个层因此具有相同的折射率。两个层可以以相同的层厚被沉积。
在按照本发明的位置测量装置中,因此由扫描头利用单色光来扫描量具。与直接地在密封层的界面处反射的光束相比,在量具的亮区域中在反射层处所反射的、由扫描头发出的光束在两次穿越间隔层和密封层时遭受到(erfährt)2π或者2π的整数倍的相移。所述光束因此不再如现有技术中那样相消干涉,亮区域的亮度不再被降低,亮暗对比度较大,并且在扫描头中的信号的分析更简单和更精确。
由于附加的密封层,量具此外相对于环境影响和部分透明层的层厚的生产决定的波动较不敏感。
根据图由不同实施方式的随后描述得出本发明的其他优点和详情。
附图说明
在此,图1示出按照现有技术的量具,
图2示出按照本发明的量具。
具体实施方式
图1示出开头所提及的现有技术。量具MV被构建在载体T上,所述载体T例如由具有特别小的热膨胀系数的材料组成、例如由在商标名Zerodur下可得到的玻璃陶瓷组成。其他材料、例如石英玻璃、浮法玻璃或者还有钢同样适用于载体T。反射层S被沉积在载体T上,所述反射层S例如可以是气相沉积的(aufgedampft)铝层或者也可以是金层。接着是间隔层A,所述间隔层A可以是具有n=1.48折射率的SiO2层。在构造为振幅光栅的量具MV的暗区域中,然后接着是部分透明层M,所述部分透明层M可以被构造为几纳米厚的铬层。硅也会是用于部分透明层的适当材料。所述部分透明层M在制造量具MV时首先整面地被沉积,并且随后在亮区域中被移除。具有随后蚀刻步骤的光刻工艺(Lithographie-Prozesse)适用于此。
应该根据示意性地画入的光束1-4来解释所述量具MV的亮暗模式(Hell-Dunkel-Muster)的实现。在量具MV的暗区域中,光不仅在部分透明层M处被反射,而且在反射层S处被反射,其中所述暗区域在图1的左侧示出。这示意性地通过两个光束1和2示出。材料和层厚被选择,使得所反射的两个光束1和2的振幅理想地是相同的,其中所述光束1和2再次离开量具MV,并且两个射束1和2理想地具有π的相位偏移。于是,在两个射束1和2之间的相消干涉导致所述射线的消除并且因此导致量具MV的暗区域。振幅的一致性通过部分透明层的层厚和折射率来调整。基本上通过适当地选择间隔层A的厚度获得π的相位偏移,所述厚度应当大致对应于为了扫描量具MV所使用的波长的四分之一部分(dem vierten Teil)除以(geteilt durch)间隔层A的折射率。在此,再次简化地假设,在空气-部分透明层、空气-间隔层以及间隔层-反射层界面处出现刚好π的相突变,并且吸收是可忽略的。因为也对于π的奇数倍出现相消干涉,所以此外也可以使用相应更厚的间隔层A。
在量具MV的亮区域中,光的最大部分在反射层S处被反射,示意性地通过光束4表示,其中所述亮区域在图1的右侧示出。仅示意性地用光束3表示的较小部分直接地在间隔层A处被反射。总体上,该区域因此将显得亮。
这样的层结构的缺点是,为了获得在光学范围中部分透明的金属层M,所述金属层M的膜厚度可能为仅几纳米,并且应当为了高的对比度尽可能精确地满足(treffen)所述膜厚度。同时,所选择的金属的折射率的虚部不应当太高,以便保持部分透明层M的吸收尽可能小。
铬对此虽然由于低折射率原则上良好地适用,但是构成透明氧化物CrxOy。这意味着,部分透明层M的实际层厚可能通过在生产和净化工艺期间的化学反应或者通过其他环境影响而改变。但是,亮暗对比度由此同时变化,因为膜厚度不再具有最优的部分透明度。于是不再保证光束1和2的尽可能完全的消除,暗区域显得稍微较亮。
附加的问题是,在亮区域中,光束3在与间隔层A的界面处的反射与光束4在反射层S处的反射相消干涉。即使由于明显不同的振幅远远不存在光束3和4的完全消除,然而量具MV的亮暗对比度因此总体上被降低。
利用在图2中示出的量具MV改善,不仅暗区域的所描绘的问题而且亮区域的所描绘的问题均能够被解决,并且因此更耐抗的(beständiger)、在亮暗对比度方面优化的量具MV被提供。
此外,在图2中示意性地示出扫描头AK,所述扫描头AK发出光用于扫描量具MV并且再次接收所述光。扫描头AK中的光电探测器产生电信号,其中位置值可以由所述电信号以已知的方式导出。
所述改善在于附加的密封层V,所述密封层V一方面负责保护部分透明层M,并且在适当的光学设计情况下也负责在亮区域中的较大亮度,并且因此总体上负责所改善的亮暗对比度。
密封层V可以由与间隔层A相同的材料组成,也即例如由溅射的SiO2组成,但是也由其他材料、例如以湿化学方式涂敷的化学物质、例如旋涂玻璃(Spin-on-Glass)或者光刻胶(例如在品牌名称Cyclotene、HSQ或SU-8下可得到的漆)组成。
决定性的是,密封层V引起与间隔层A相同的π(或者π的奇数倍)的相移。为此,相应的层A、V的层厚dA、dV和折射率nA、nV的乘积必须是相同的,或者相差奇数倍。也即于是光束4相对于光束3具有2π(或者π的其他偶数倍)的相位偏移,并且与光束3相长干涉(interferiert konstruktiv)——如在现有技术中的亮度的轻微降低取消,亮暗对比度升高。
如果由具有相同折射率的材料、尤其由相同的材料构成间隔层A和密封层V,那么两个层的厚度dA、dV优选地是相同的。但是,只要一个层厚相对另一层厚的奇数倍仅同样导致π的附加相位偏移,因此总计导致2π的偏移,所述奇数倍也再次是可能的。换句话说,层厚dA、dV必须是相同的或者相差奇数倍。
密封层V在暗区域中保护部分透明层M免受环境影响,并且例如可以预防薄的铬层M氧化并且因此预防量具MV的亮暗对比度可能恶化。此外,通过密封层V保护特别薄的部分透明层M免受机械损坏。
部分透明层M由于密封层V也可以总体上结果是稍微更厚,这有助于附加的工艺安全性。也即如果考虑在图2的左半部中量具MV的暗区域,那么看出,光束2和5在离开量具MV时具有2π的相位差,并且因此相长地(konstruktiv)叠加。同时地(zusammen),所述光束2和5必须与光束1相消干涉,所述光束1因此必须具有比在按照图1的现有技术中更高的强度。但是,针对光束1的更高的强度意味着在部分透明层M处的更强的反射,并且因此意味着针对所述层M的更大的层厚。利用455nm波长的光、分别由SiO2(n=1.48)组成的具有大约65nm厚度的间隔层A和密封层V的理论计算和实验已经得出:部分透明铬层M的最优厚度处于将近5nm处,而按照现有技术(也即在没有密封层V的情况下)的最优值处于大约2.5nm处。用于部分透明层M的层厚(也即在暗区域中在0.1的最大反射情况下层M的所允许的层厚变动(Schichtdickenvariation))的工艺窗口(Prozessfenster)此外由于密封层V按照计算变成大约两倍宽。
所述计算和实验此外在应用优化的密封层V的情况下得到了亮暗对比度(也即没有层M的区域的反射减去具有层M的区域的反射)从0.7到0.8的改善。
应当如所描述的那样根据(auf)为了扫描量具MV所使用的光的波长来优化不同的层厚。在此,例如通过计算确定出,在光的波长与为了优化所使用的波长偏离的情况下,由于密封层而得到加宽的波长范围,对于所述波长范围可以获得足够好的对比度。因此,本发明也导致可更广泛地应用的量具,所述量具适用于具有不同波长的光或者具有不同的扫描头AK的使用(Einsatz)。
Claims (9)
1.用于具有光学扫描的位置测量装置的量具,所述量具具有载体(T),反射层(S)布置在所述载体(T)上,接着是透明的间隔层(A),结构化的部分透明层(M)布置在所述间隔层(A)上,所述部分透明层(M)限定亮暗模式,其中具有所述部分透明层(M)的区域显得暗,而没有所述部分透明层(M)的区域显得亮,其特征在于,密封层(V)布置在所述结构化的部分透明层(M)上,其中针对所述间隔层(A)和所述密封层(V)的折射率(nA、nV)和层厚(dA、dV)的乘积是相同的,或者相差奇数倍。
2.按照权利要求1所述的量具,其特征在于,所述间隔层(A)和所述密封层(V)具有相同的折射率(nA、nV)。
3.按照权利要求2所述的量具,其特征在于,所述间隔层(A)和所述密封层(V)由相同的材料组成。
4.按照权利要求2或3所述的量具,其特征在于,所述间隔层(A)和所述密封层(V)具有相同的厚度(dA、dV)。
5.按照上述权利要求之一所述的量具,其特征在于,所述间隔层(A)和所述密封层(V)由二氧化硅组成。
6.按照上述权利要求之一所述的量具,其特征在于,所述部分透明层(M)由铬层组成,所述铬层优选地比10 nm更薄。
7.位置测量装置,所述位置测量装置具有按照上述权利要求之一所述的量具,以及具有用于利用单色光扫描所述量具(MV)的扫描头(AK),其中与直接地在所述密封层(V)的界面处反射的光束(3)相比,在所述量具(MV)的所述亮区域中在所述反射层(S)处反射的、由所述扫描头(AK)发出的光束(4)在两次穿越所述间隔层(A)和所述密封层(V)时遭受到2π或者2π的整数倍的相移。
8.按照权利要求7所述的位置测量装置,其特征在于,所述密封层(V)的所述厚度(dV)对应于由所述扫描头所使用的光的波长的四分之一部分除以所述密封层(V)的所述折射率(nV),或者对应于所述厚度的奇数倍。
9.按照权利要求7或8所述的位置测量装置,其特征在于,所述间隔层(A)的所述厚度(dA)对应于由所述扫描头使用的光的波长的四分之一部分除以所述间隔层(A)的所述折射率(nA),或者对应于所述厚度的奇数倍。
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US20170211951A1 (en) | 2017-07-27 |
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