CN101086453B - 具有反射式相位光栅的标尺 - Google Patents
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- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
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Abstract
本发明涉及一种具有反射式相位光栅的标尺，该相位光栅具有作为反射层堆叠(3)的交替的高折射层(6，7)和低折射层(5a，5b)，该层堆叠设置在基底(2)上。高折射层(6，7)由硅构成，低折射层(5a，5b)由二氧化硅构成。
Description
技术领域
本发明涉及一种具有反射式相位光栅的标尺。这种标尺应用在高精度的干涉式位置测量系统中。
背景技术
随着以光学标尺扫描为基础的位置测量系统的进一步发展，对这种标尺的要求也越来越高。除了尽可能精细的光栅结构之外，即，光栅结构在测量方向上的光栅常数已经处于亚微米范围内，并由此使量距可以处于亚纳米范围中，标尺光栅还必需具有尽可能好的反射能力。由于这个原因，使用了用于高精度的垂直入射系统的相位光栅，该相位光栅尽可能完全地反射入射光线。
在最新式的位置测量系统中，例如在EP 1319170B1中描述的位置测量系统中，在光线入射到光电检测器上并在那里产生取决于待测量位置的周期信号之前，光源的光线被多次偏转到标尺上，在那里以不同的衍射级分开和反射。
为了获得较好的检测器信号，目前所达到的在50％-70％范围内的相位光栅反射能力已经不能满足要求。因此，需要90％和更高的反射能力。
在EP 0773458B1(本申请基于该专利)中，描述了一种具有反射式相位光栅的标尺。该相位光栅具有设置在基底上的反射层堆叠，该层堆叠由高折射和低折射的层组成。该标尺的层数在8到14层之间并且制造费用高昂。
发明内容
本发明的目的在于提出一种具有反射式相位光栅的标尺，其构造简单，但仍可以获得特别高的反射能力。
该目的通过具有权利要求1的特征的装置来实现。有利的实施例由引用权利要求1的从属权利要求中的技术特征给出。
本发明描述了一种具有反射式相位光栅的标尺，该相位光栅具有作为反射层堆叠的交替的高折射层和低折射层，该层堆叠设置在基底上。高折射层由硅构成，低折射层由二氧化硅构成。
因为硅可以透过850nm-900nm(接近红外线区域)的光波长，该光波长典型地应用在本发明所考虑类型的光学位置测量系统中，并且硅具有相当高的折射率(对于880nm波长来说n＞4)，层堆叠中层的数量可以减到非常少，借此，显著简化了相位光栅的结构。如果使用NiCr80/20作为最下面的层，那么可以获得大于90％的反射能力，该最下面的层为层堆叠中面向基底的层。
为了制造相位光栅结构，最上面的层被设计为硅层。这种硅层可以通过等离子化学工艺以较高的质量来结构化，其中位于最上面的硅层之下的二氧化硅层起到终止蚀刻的作用。这样高品质的光栅结构可以通过非常简单的工艺制成，该光栅结构确保了用于在位置测量系统中进行后续处理的相当好的信号。
本发明的其它优点和细节在对根据图1的优选实施例的后续描述中得出，图中示出了具有特别优选的相位光栅的标尺的截面图。
附图说明
图1示出了标尺1的截面图。在此，截面与测量方向M位于同一个平面，并且垂直于层堆叠3的各个层，设置在基底2上的相位光栅由该层堆叠构成。
具体实施方式
相位光栅重要的组成部分是层堆叠3，该层堆叠由交替设置的低折射的二氧化硅层5a、5b和高折射的硅层6、7构成。这种电介质的层堆叠在光学中是为人熟知的，并且当各个层的厚度与光波长相匹配时，能非常好地反射确定波长的入射光。
为了进一步提高相位光栅的反射能力，在层堆叠3中存在面向基底的镍-铬-合金(NiCr80/20)的底层4。在这个大约100nm厚的NiCr80/20层4上设有厚度为157nm的二氧化硅层5a，接下来是45nm厚的硅层6。位于其上的另外的二氧化硅层5b厚度为95nm。
针对用于扫描标尺1的波长为850nm的光线，将上述的层厚度进行优化，使得当用于位置测量的两个1级衍射级具有最大值时，0级衍射级尽可能地被抑制。选择层堆叠3中的层厚度，使得当0级衍射级被抑制时，用于扫描标尺1的入射的单色光优选地衍射到第一衍射级。在这里，光线投射到标尺1上的入射角可以位于0-30度的范围内，其中0度意味着光垂直于标尺表面入射。
将最上面的厚度大约为17nm的硅层7结构化，并且最终引起反射光的相位调制。光栅结构(例如平行的光栅刻线)垂直于附图平面延伸，并且在测量方向M上是周期性的。在剥离掉最上层7的硅的区域中，反射光所经过的光行程比存在最上层7的硅的区域中少2*(n-1)*D。其中，D是最上层硅层7的厚度，n是该层的折射率。
上述的层厚度是参考值，这些值可以有几纳米的偏差，而不会对标尺1的质量造成本质上的影响。当然也可以找到层厚度的其他的组合，其具有相似的较好的反射能力。
特别有利的是，在对最上面的硅层结构化时可以应用等离子化学工艺。因为这种工艺在位于硅层下的二氧化硅层5b上终止，并且由此该二氧化硅层被暴露出来，从而得到了非常理想地定义的结构。此外，只利用五层就可达到90％的反射能力，从而使得光线在标尺上多重反射后，位置测量系统的光电检测器可以获得良好的信号。
通过结构化的最上层7的17nm的非常薄的厚度，形成了这么低的高度的台阶，使得污物几乎不可能在凹处或者在台阶上聚积。因此，标尺1对于污物是非常不敏感的。
热膨胀系数接近于0，例如数值小于0.05ppm/K的材料优选用作基底2，例如可以获得Zerodur品牌的这样的材料。根据本申请，其它材料如石英玻璃、钢铁、陶瓷或者硅也适合作为基底。
Claims (10)
1.一种用于干涉式位置测量系统的标尺，所述标尺具有反射式相位光栅，所述相位光栅具有在反射层堆叠(3)中交替的高折射层(6，7)和低折射层(5a，5b)，其中所述反射层堆叠设置于基底(2)上，其特征在于，所述高折射层(6，7)由硅构成，所述低折射层(5a，5b)由二氧化硅构成；将远离所述基底的所述层堆叠(3)的最上层的高折射层(7)结构化；将所述最上层(7)这样结构化，使得暴露出位于其下的所述低折射层(5b)；所述最上层(7)具有在测量方向(M)上的周期性的光栅结构。
2.根据权利要求1所述的标尺，其特征在于，所述层堆叠(3)的被结构化的最上层(7)由硅构成。
3.根据权利要求1所述的标尺，其特征在于，所述相位光栅的相位调制作用以所述最上层(7)的结构化为基础。
4.根据权利要求1所述的标尺，其特征在于，面向所述基底(2)的所述层堆叠(3)的底层(4)是镍铬层。
5.根据权利要求4所述的标尺，其特征在于，所述底层(4)是NiCr80/20层。
6.根据权利要求1所述的标尺，其特征在于，从所述基底(2)开始，所述层堆叠(3)具有未结构化的金属底层(4)、第一个未结构化的低折射层(5a)、未结构化的高折射层(6)、第二个未结构化的低折射层(5b)、以及结构化的高折射层(7)。
7.根据权利要求6所述的标尺，其特征在于，所述未结构化的金属底层(4)具有100nm的厚度，所述第一个未结构化的低折射层(5a)具有157nm的厚度，所述未结构化的高折射层(6)具有45nm的厚度，所述第二个未结构化的低折射层(5b)具有95nm的厚度，以及所述结构化的高折射层(7)具有17nm的厚度。
8.根据权利要求1所述的标尺，其特征在于，所述层堆叠(3)中的层厚度这样地选择，使得用于扫描所述标尺(1)的入射光线优选衍射到第一衍射级中。
9.根据权利要求1所述的标尺，其特征在于，所述基底(2)由热膨胀系数的数值小于0.05ppm/K的材料构成。
10.根据权利要求9所述的标尺，其特征在于，所述基底由Zerodur材料构成。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006027047A DE102006027047A1 (de) | 2006-06-10 | 2006-06-10 | Maßstab mit einem reflektierenden Phasengitter |
| DE102006027047.9 | 2006-06-10 |
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| Publication Number | Publication Date |
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| CN101086453A CN101086453A (zh) | 2007-12-12 |
| CN101086453B true CN101086453B (zh) | 2011-03-23 |
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| CN200710079749XA Expired - Fee Related CN101086453B (zh) | 2006-06-10 | 2007-03-07 | 具有反射式相位光栅的标尺 |
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| Country | Link |
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| EP (1) | EP1865280B1 (zh) |
| CN (1) | CN101086453B (zh) |
| AT (1) | ATE439567T1 (zh) |
| DE (2) | DE102006027047A1 (zh) |
| ES (1) | ES2329621T3 (zh) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104777532B (zh) * | 2015-04-03 | 2017-02-22 | 中国科学院上海光学精密机械研究所 | 基于级联光栅结构的超窄带te偏振光谱选择性吸收器 |
| DE102015218702A1 (de) * | 2015-09-29 | 2017-03-30 | Dr. Johannes Heidenhain Gmbh | Optisches Schichtsystem |
| JP7238657B2 (ja) * | 2019-07-16 | 2023-03-14 | セイコーエプソン株式会社 | 時計用部品、時計用ムーブメントおよび時計 |
| CN110596811B (zh) * | 2019-10-10 | 2020-07-17 | 联合微电子中心有限责任公司 | 一种光栅耦合结构及其制作方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0773458B1 (de) * | 1995-11-11 | 2000-03-08 | Dr. Johannes Heidenhain GmbH | Auflicht-Phasengitter |
| CN1320826A (zh) * | 2000-04-27 | 2001-11-07 | 中国科学院力学研究所 | 用于高功率激光光束取样的隐埋式反射取样光栅 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| DE10150099A1 (de) * | 2001-10-11 | 2003-04-17 | Heidenhain Gmbh Dr Johannes | Verfahren zur Herstellung eines Maßstabes, sowie derart hergestellter Maßstab und eine Positionsmesseinrichtung |
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2006
- 2006-06-10 DE DE102006027047A patent/DE102006027047A1/de not_active Withdrawn
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- 2007-02-06 DE DE502007001273T patent/DE502007001273D1/de active Active
- 2007-02-06 AT AT07002493T patent/ATE439567T1/de active
- 2007-02-06 EP EP07002493A patent/EP1865280B1/de active Active
- 2007-02-06 ES ES07002493T patent/ES2329621T3/es active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0773458B1 (de) * | 1995-11-11 | 2000-03-08 | Dr. Johannes Heidenhain GmbH | Auflicht-Phasengitter |
| CN1320826A (zh) * | 2000-04-27 | 2001-11-07 | 中国科学院力学研究所 | 用于高功率激光光束取样的隐埋式反射取样光栅 |
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| Publication number | Publication date |
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| DE502007001273D1 (de) | 2009-09-24 |
| CN101086453A (zh) | 2007-12-12 |
| DE102006027047A1 (de) | 2007-12-13 |
| ATE439567T1 (de) | 2009-08-15 |
| EP1865280A1 (de) | 2007-12-12 |
| ES2329621T3 (es) | 2009-11-27 |
| EP1865280B1 (de) | 2009-08-12 |
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