CN106971757A - A kind of method and system of inspection Nand Flash mass - Google Patents
A kind of method and system of inspection Nand Flash mass Download PDFInfo
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- CN106971757A CN106971757A CN201710174028.0A CN201710174028A CN106971757A CN 106971757 A CN106971757 A CN 106971757A CN 201710174028 A CN201710174028 A CN 201710174028A CN 106971757 A CN106971757 A CN 106971757A
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- Prior art keywords
- memory block
- nand flash
- numbering
- memory
- data
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
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- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Abstract
The present invention relates to Nand Flash quality inspections field, more particularly to a kind of method and system of inspection Nand Flash mass.The present invention is the corresponding redundancy of every page by the memory block in S1, verification Nand Flash, obtains the numbering of the underproof memory block of verification;S2, the original bad block table of numbering establishment according to the underproof memory block of verification;S3, default first data of storage to the memory block;Data obtain the second data in S4, the reading memory block;S5, by first data and second comparing, obtain the numbering for comparing different memory blocks;S6, the final bad block table of numbering establishment according to the different memory blocks of the comparison;If the numbering of S7, memory block in the final bad block table is different with the numbering of the memory block of record in the original bad block table, it is determined that the Nand Flash are unqualified.It ensure that the Nand Flash dispatched from the factory quality.
Description
Technical field
The present invention relates to Nand Flash quality inspections field, more particularly to a kind of method of inspection Nand Flash mass
And system.
Background technology
Overwhelming majority digital product can all use storage device now, in the case of digital product is more and more extensive, deposit
The stability and security for storing up equipment are the key factors of the stability of the correctness and system that ensure that digital product data.
But, unstable or unsafe storage device can be produced unavoidably in process of production.So, find out storage device
The Nand Flash factors of instability, before storage device Nand Flash put into next step manufacturing process, set to storage
It is standby accurately to be examined, and assay is accurately fed back into digital equipment, it is digital equipment is used more stable, the life-span
A kind of longer effective means.
The content of the invention
The technical problems to be solved by the invention are:Accurately judge Nand Flash quality condition.
The corresponding redundancy of every page of the memory block in Nand Flash is verified, the underproof memory block of verification is obtained
Numbering;
Original bad block table is created according to the numbering of the underproof memory block of verification;
Storage presets the first data to the memory block;
Read data in the memory block and obtain the second data;
By first data and second comparing, the numbering for comparing different memory blocks is obtained;
Final bad block table is created according to the numbering for comparing different memory blocks;
If the numbering and the numbering of the memory block of record in the original bad block table of the memory block in the final bad block table
It is different, it is determined that the Nand Flash are unqualified.
The present invention separately provides a kind of system of inspection Nand Flash mass, including:
Correction verification module, the corresponding redundancy of every page for verifying the memory block in Nand Flash, is verified
The numbering of underproof memory block;
First creation module, for creating original bad block table according to the numbering of the underproof memory block of verification;
First memory module, for storing default first data to the memory block;
Read module, the second data are obtained for reading data in the memory block;
Comparing module, for by first data and second comparing, obtaining and comparing different memory blocks
Numbering;
Second creation module, for creating final bad block table according to the numbering for comparing different memory blocks;
Determining module, if the numbering for the memory block in the final bad block table in the original bad block table with recording
The numbering of memory block is different, it is determined that the Nand Flash are unqualified.
The beneficial effects of the present invention are:By inspection twice, for the first time by examining the redundancy of every page of memory block to believe
Cease to determine that memory block whether there is quality problems, examined for the second time by the input and reading of data, comparison is examined twice
Obtained memory block situation is made one comprehensively come the quality condition to Nand Flash and accurately evaluated, it is ensured that finally dispatch from the factory
Nand Flash are being not in serious quality problems, will not be to having a strong impact on the operation of digital equipment miscellaneous part.
Brief description of the drawings
Fig. 1 is a kind of FB(flow block) of the method embodiment of inspection Nand Flash mass of the present invention;
Fig. 2 is a kind of system block diagram of the system embodiment of inspection Nand Flash mass of the present invention;
Fig. 3 is a kind of system block diagram of the system embodiment of inspection Nand Flash mass of the present invention;
Label declaration:
1st, correction verification module;2nd, the first creation module;3rd, the first memory module;4th, read module;
5th, comparing module;6th, the second creation module;7th, determining module;8th, setup module;
9th, module is wiped;10th, the second memory module;11st, division module.
Embodiment
To describe technology contents, the objects and the effects of the present invention in detail, below in conjunction with embodiment and coordinate attached
Figure is explained.
The design of most critical of the present invention is:For the first time by examining the redundancy of every page of memory block to determine memory block
Quality, second is read out data manipulation to determine the quality of memory block to each memory block, compare examine twice
To the quality condition of memory block determine Nand Flash quality.
Fig. 1-Fig. 3 is refer to,
As shown in figure 1, the present invention provides a kind of method of inspection Nand Flash mass:
The corresponding redundancy of every page of the memory block in Nand Flash is verified, the underproof memory block of verification is obtained
Numbering;
Original bad block table is created according to the numbering of the underproof memory block of verification;
Storage presets the first data to the memory block;
Read data in the memory block and obtain the second data;
By first data and second comparing, the numbering for comparing different memory blocks is obtained;
Final bad block table is created according to the numbering for comparing different memory blocks;
If the numbering and the numbering of the memory block of record in the original bad block table of the memory block in the final bad block table
It is different, it is determined that the Nand Flash are unqualified.
Seen from the above description, the beneficial effects of the present invention are:By inspection twice, Nand can be more accurately determined
Flash quality condition, accurately finds out the block that there are quality problems in Nand Flash.Meanwhile, compare the knot examined twice
Really, moreover it is possible to find out performance unstability Nand Flash, confirmed as unqualified, not dispatched from the factory.
Further, in addition to:
Predeterminated position for the every page of the memory block sets redundancy.
Seen from the above description, by being provided with redundancy in advance, redundancy is verified after, so that high
The quality condition of the inspection memory block of effect.
Further, in addition to:
Wipe the data of the memory block.
Seen from the above description, before second of inspection is carried out, erasing operation is first carried out, it is to avoid original in memory block
The result that data influence is examined, improves the accuracy of inspection.
Further, in addition to:
Store the memory block in the original bad block table, final bad block table to the Nand Flash.
Seen from the above description, it can enter equipment at Nand Flash the bad block table storing for examining acquisition twice
These bad blocks are circumvented when row storage operation, so as to reduce the error rate of operation.
Further, in addition to:
Predetermined number page is divided for the memory block.
Seen from the above description, memory block is divided into some pages, is the preservation more specification of data, improves storage
Efficiency, reduce the error rate of storage.
As shown in Fig. 2 the present invention provides a kind of system of inspection Nand Flash mass, including:
Correction verification module 1, the corresponding redundancy of every page for verifying the memory block in Nand Flash, is verified
The numbering of underproof memory block;
First creation module 2, for creating original bad block table according to the numbering of the underproof memory block of verification;
First memory module 3, for storing default first data to the memory block;
Read module 4, the second data are obtained for reading data in the memory block;
Comparing module 5, for by first data and second comparing, obtaining and comparing different memory blocks
Numbering;
Second creation module 6, for creating final bad block table according to the numbering for comparing different memory blocks;
Determining module 7, if the numbering for the memory block in the final bad block table in the original bad block table with recording
Memory block numbering it is different, it is determined that the Nand Flash are unqualified.
Further, in addition to:
Setup module 8, the predeterminated position for the every page for the memory block sets redundancy.
Further, in addition to:
Wipe module 9, the data for wiping the memory block.
Further, in addition to:
Second memory module 10, for storing the original bad block table, final bad block table in the Nand Flash
Memory block.
Further, in addition to:
Division module 11, for dividing predetermined number page for the memory block.
Embodiment:
Embodiments of the invention provide a kind of method of inspection Nand Flash mass, comprise the following steps:
S1, all physical blocks for obtaining Nand Flash, and set up an original bad block table.
The redundancy of each page, when verifying underproof, will be verified underproof in S2, one by one verification memory block
The numbering of memory block is saved in original bad block table.
S3, setting program create final bad block table in Nand Flash.
S4, the formula can wipe the data in first memory block (block 0) first;Then, obtain in Nand Flash
First memory block.
S5, with random data write all pages in completely described first memory block.Write after completely whole block, next just institute
All pages of data read-out in first memory block is stated, is compared with the random data that writes at the beginning, if comparison result
For two data differences, then the numbering of first memory block is obtained, the numbering is saved in final bad block table.More than
After the completion of operation, jump to next piece and continue to operate above, until all pieces of all tests are completed.At this moment final bad block table is also set up
Complete.
S6, judge whether the internal memory number of blocks of the final bad block table record is more than default value, if being more than,:It is determined that
The Nand Flash are unqualified;If being not more than:
S7, judge whether the numbering of memory block of the final bad block table record is not equal to what the original bad block table was recorded
The numbering of memory block, if being not equal to:It is unqualified then to determine the Nand Flash;If being equal to:Then determine the Nand
Flash is qualified.
In summary, a kind of method and system of inspection Nand Flash mass of offer that the present invention is provided.By twice
The inspection of quality, determines the quality of block by examining the redundancy of every page of memory block for the first time, second to each internal memory
Block is read out data manipulation to determine the quality of memory block, compares the situation for the obtained memory block examined twice to determine
Nand Flash quality, and the bad block table storing obtained twice can be allowed using Nand Flash's in Nand Flash
Equipment circumvents bad block by bad block table, it is ensured that the quality of data storage, while dividing some pages for memory block, makes storage
Manage more specification efficient.Meanwhile, erasing operation first is carried out to block before second of inspection is carried out, it is to avoid examine at second
When testing, the check conclusion of mistake is obtained because of the existing data of memory block.
Embodiments of the invention are the foregoing is only, are not intended to limit the scope of the invention, it is every to utilize this hair
The equivalents that bright specification and accompanying drawing content are made, or the technical field of correlation is directly or indirectly used in, similarly include
In the scope of patent protection of the present invention.
Claims (10)
1. a kind of method of inspection Nand Flash mass, it is characterised in that including:
S1, the memory block verified in Nand Flash the corresponding redundancy of every page, obtain the underproof memory block of verification
Numbering;
S2, the original bad block table of numbering establishment according to the underproof memory block of verification;
S3, default first data of storage to the memory block;
Data obtain the second data in S4, the reading memory block;
S5, by first data and second comparing, obtain the numbering for comparing different memory blocks;
S6, the final bad block table of numbering establishment according to the different memory blocks of the comparison;
If the numbering of the numbering of S7, memory block in the final bad block table and the memory block of record in the original bad block table is not
Together, it is determined that the Nand Flash are unqualified.
2. a kind of method of inspection Nand Flash mass according to claim 1, it is characterised in that also include:
Predeterminated position for the every page of the memory block sets redundancy.
3. a kind of method of inspection Nand Flash mass according to claim 1, it is characterised in that before the S3, also
Including:
Wipe the data of the memory block.
4. a kind of method of inspection Nand Flash mass according to claim 1, it is characterised in that also include:
Store the memory block in the original bad block table, final bad block table to the Nand Flash.
5. a kind of method of inspection Nand Flash mass according to claim 1, it is characterised in that also include:
Predetermined number page is divided for the memory block.
6. a kind of system of inspection Nand Flash mass, it is characterised in that including:
Correction verification module, the corresponding redundancy of every page for verifying the memory block in Nand Flash obtains verification and not conformed to
The numbering of the memory block of lattice;
First creation module, for creating original bad block table according to the numbering of the underproof memory block of verification;
First memory module, for storing default first data to the memory block;
Read module, the second data are obtained for reading data in the memory block;
Comparing module, for by first data and second comparing, obtaining the numbering for comparing different memory blocks;
Second creation module, for creating final bad block table according to the numbering for comparing different memory blocks;
Determining module, if for the internal memory recorded in the numbering of the memory block in the final bad block table and the original bad block table
The numbering of block is different, it is determined that the Nand Flash are unqualified.
7. a kind of system of inspection Nand Flash mass according to claim 6, it is characterised in that also include:
Setup module, the predeterminated position for the every page for the memory block sets redundancy.
8. a kind of system of inspection Nand Flash mass according to claim 6, it is characterised in that also include:
Wipe module, the data for wiping the memory block.
9. a kind of system of inspection Nand Flash mass according to claim 6, it is characterised in that also include:
Second memory module, for storing the memory block in the original bad block table, final bad block table to the Nand Flash.
10. a kind of system of inspection Nand Flash mass according to claim 6, it is characterised in that also include:
Division module, for dividing predetermined number page for the memory block.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107632778A (en) * | 2017-08-07 | 2018-01-26 | 深圳芯邦科技股份有限公司 | A kind of Nand Flash scanning detection methods and system |
CN107908506A (en) * | 2017-09-28 | 2018-04-13 | 芯海科技(深圳)股份有限公司 | A kind of implementation method of memory bad point management |
CN112530508A (en) * | 2019-09-17 | 2021-03-19 | 北京振兴计量测试研究所 | NAND FLASH memory parallel test and bad block write-back method |
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CN102237143A (en) * | 2010-04-21 | 2011-11-09 | 深圳市江波龙电子有限公司 | Reconstruction method, system and reconstruction device for block information provided in flash memory |
CN102622306A (en) * | 2012-02-21 | 2012-08-01 | 中颖电子股份有限公司 | Bad block management method for storage device |
CN104317733A (en) * | 2014-10-28 | 2015-01-28 | 陕西千山航空电子有限责任公司 | NAND FLASH bad block management method |
CN106158047A (en) * | 2016-07-06 | 2016-11-23 | 深圳佰维存储科技股份有限公司 | A kind of NAND FLASH method of testing |
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Patent Citations (4)
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CN102237143A (en) * | 2010-04-21 | 2011-11-09 | 深圳市江波龙电子有限公司 | Reconstruction method, system and reconstruction device for block information provided in flash memory |
CN102622306A (en) * | 2012-02-21 | 2012-08-01 | 中颖电子股份有限公司 | Bad block management method for storage device |
CN104317733A (en) * | 2014-10-28 | 2015-01-28 | 陕西千山航空电子有限责任公司 | NAND FLASH bad block management method |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107632778A (en) * | 2017-08-07 | 2018-01-26 | 深圳芯邦科技股份有限公司 | A kind of Nand Flash scanning detection methods and system |
CN107632778B (en) * | 2017-08-07 | 2020-06-12 | 深圳芯邦科技股份有限公司 | Nand Flash scanning detection method and system |
CN107908506A (en) * | 2017-09-28 | 2018-04-13 | 芯海科技(深圳)股份有限公司 | A kind of implementation method of memory bad point management |
CN112530508A (en) * | 2019-09-17 | 2021-03-19 | 北京振兴计量测试研究所 | NAND FLASH memory parallel test and bad block write-back method |
CN112530508B (en) * | 2019-09-17 | 2023-10-20 | 北京振兴计量测试研究所 | NAND FLASH memory parallel test and bad block write-back method |
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Application publication date: 20170721 |