CN106920871A - 一种专用于紫外led芯片的封装结构 - Google Patents
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Abstract
本发明公开了一种专用于紫外LED芯片的封装结构,包括:金属基板、阳极端子、阴极端子、紫外LED芯片、导热绝缘夹层、塑封部和透镜部;所述导热绝缘夹层由以下组分组成:聚砜树脂,环氧改性有机硅树脂,改性氮化硅,氧化锆,氮化硼,氧化钙,纳米硅铝粉,煅烧高岭土,西吡氯铵,氯化铬,硬脂酸铝,苯并三氮唑,聚乙烯吡咯烷酮,油酰甲胺乙磺酸钠。本发明封装结构合理,采用经过特殊优化的导热绝缘夹层,导热绝缘夹层的电绝缘性能、导热性能、耐老化性能好,能提紫外LED的性能。
Description
技术领域
本发明涉及一种专用于紫外LED芯片的封装结构。
背景技术
紫外LED一般指发光中心波长在400nm以下的LED,但有时将发光波长大于380nm时称为近紫外LED,而短于300nm时称为深紫外LED。因短波长光线的杀菌效果高,因此紫外LED常用于冰箱和家电等的杀菌及除臭等用途。
紫外LED的性能与紫外LED芯片的封装结构息息相关,特别是紫外LED芯片的散热性能,很大程度上决定了紫外LED的性能。
发明内容
本发明的目的在于提供一种专用于紫外LED芯片的封装结构,其封装结构合理,采用经过特殊优化的导热绝缘夹层,导热绝缘夹层的电绝缘性能、导热性能、耐老化性能好,且导热绝缘夹层还具有耐热、抗氧化、耐腐蚀、阻燃的性能,可靠性好,能提紫外LED的性能。
为实现上述目的,本发明的技术方案是设计一种专用于紫外LED芯片的封装结构,包括:金属基板,设于金属基板上的阳极端子和阴极端子,安装于金属基板上且通过引线分别与阳极端子和阴极端子电连接的紫外LED芯片,设于紫外LED芯片和金属基板间的导热绝缘夹层,设于金属基板上且将紫外LED芯片和引线密封的塑封部,以及由塑封部中央部位突出的透镜部;
按重量份计,所述导热绝缘夹层由以下组分组成:
27~31份聚砜树脂,
36~41份环氧改性有机硅树脂,
3~4份改性氮化硅,
1~3份氧化锆,
2~4份氮化硼,
1~3份氧化钙,
2~3份纳米硅铝粉,
1~2份煅烧高岭土,
2~4份西吡氯铵,
3~4份氯化铬,
2~6份硬脂酸铝,
4~9份苯并三氮唑,
6~8份聚乙烯吡咯烷酮,
4~7份油酰甲胺乙磺酸钠。
优选的,所述导热绝缘夹层由以下组分组成:
27份聚砜树脂,
36份环氧改性有机硅树脂,
3份改性氮化硅,
1份氧化锆,
2份氮化硼,
1份氧化钙,
2份纳米硅铝粉,
1份煅烧高岭土,
2份西吡氯铵,
3份氯化铬,
2份硬脂酸铝,
4份苯并三氮唑,
6份聚乙烯吡咯烷酮,
4份油酰甲胺乙磺酸钠。
优选的,按重量份计,所述导热绝缘夹层由以下组分组成:
31份聚砜树脂,
41份环氧改性有机硅树脂,
4份改性氮化硅,
3份氧化锆,
4份氮化硼,
3份氧化钙,
3份纳米硅铝粉,
2份煅烧高岭土,
4份西吡氯铵,
4份氯化铬,
6份硬脂酸铝,
9份苯并三氮唑,
8份聚乙烯吡咯烷酮,
7份油酰甲胺乙磺酸钠。
本发明的优点和有益效果在于:提供一种专用于紫外LED芯片的封装结构,其封装结构合理,采用经过特殊优化的导热绝缘夹层,导热绝缘夹层的电绝缘性能、导热性能、耐老化性能好,且导热绝缘夹层还具有耐热、抗氧化、耐腐蚀、阻燃的性能,可靠性好,能提紫外LED的性能。
导热绝缘夹层的性能是基于其材料的,而导热绝缘夹层材料的性能是由其组分及配比所决定的,本发明对导热绝缘夹层材料的组分及配比进行特殊优化,使导热绝缘夹层材料具有优异的导热性能,且导热绝缘夹层材料还具有耐热、抗氧化、耐腐蚀、阻燃的性能,可靠性好,非常适用于紫外LED芯片。
导热绝缘夹层材料的性能是由其组分及配比所决定的,而组分及配比的确定非简单地“加法”,即并非将各个组分的性能一一累加就可得出导热绝缘夹层材料的性能;导热绝缘夹层材料中的不同组分会相互影响,如果组分及其配比不相互协调,单个组分所带来的有益效果,会被其他组分消减甚至消除,严重的时候,不同组分相互抵触,起不到整体综合作用,产生负作用和次品。本发明通过大量创造性劳动、反复验证,得到导热绝缘夹层材料的最优组分及配比,使得多个组分综合在一起、相互协调、并产生正向综合效应,最终使导热绝缘夹层材料具有优异的导热性能,还进一步使导热绝缘夹层材料具有耐热、抗氧化、耐腐蚀、阻燃性能,导热绝缘夹层可靠性好,非常适用于紫外LED芯片。
具体实施方式
下面结合实施例,对本发明的具体实施方式作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案,而不能以此来限制本发明的保护范围。
本发明具体实施的技术方案是:
实施例1
一种专用于紫外LED芯片的封装结构,包括:金属基板,设于金属基板上的阳极端子和阴极端子,安装于金属基板上且通过引线分别与阳极端子和阴极端子电连接的紫外LED芯片,设于紫外LED芯片和金属基板间的导热绝缘夹层,设于金属基板上且将紫外LED芯片和引线密封的塑封部,以及由塑封部中央部位突出的透镜部;
按重量份计,所述导热绝缘夹层由以下组分组成:
27~31份聚砜树脂,
36~41份环氧改性有机硅树脂,
3~4份改性氮化硅,
1~3份氧化锆,
2~4份氮化硼,
1~3份氧化钙,
2~3份纳米硅铝粉,
1~2份煅烧高岭土,
2~4份西吡氯铵,
3~4份氯化铬,
2~6份硬脂酸铝,
4~9份苯并三氮唑,
6~8份聚乙烯吡咯烷酮,
4~7份油酰甲胺乙磺酸钠。
实施例2
在实施例1的基础上,区别在于,所述导热绝缘夹层由以下组分组成:
27份聚砜树脂,
36份环氧改性有机硅树脂,
3份改性氮化硅,
1份氧化锆,
2份氮化硼,
1份氧化钙,
2份纳米硅铝粉,
1份煅烧高岭土,
2份西吡氯铵,
3份氯化铬,
2份硬脂酸铝,
4份苯并三氮唑,
6份聚乙烯吡咯烷酮,
4份油酰甲胺乙磺酸钠。
实施例3
在实施例1的基础上,区别在于,按重量份计,所述导热绝缘夹层由以下组分组成:
31份聚砜树脂,
41份环氧改性有机硅树脂,
4份改性氮化硅,
3份氧化锆,
4份氮化硼,
3份氧化钙,
3份纳米硅铝粉,
2份煅烧高岭土,
4份西吡氯铵,
4份氯化铬,
6份硬脂酸铝,
9份苯并三氮唑,
8份聚乙烯吡咯烷酮,
7份油酰甲胺乙磺酸钠。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明技术原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (3)
1.一种专用于紫外LED芯片的封装结构,其特征在于,包括:金属基板,设于金属基板上的阳极端子和阴极端子,安装于金属基板上且通过引线分别与阳极端子和阴极端子电连接的紫外LED芯片,设于紫外LED芯片和金属基板间的导热绝缘夹层,设于金属基板上且将紫外LED芯片和引线密封的塑封部,以及由塑封部中央部位突出的透镜部;
按重量份计,所述导热绝缘夹层由以下组分组成:
27~31份聚砜树脂,
36~41份环氧改性有机硅树脂,
3~4份改性氮化硅,
1~3份氧化锆,
2~4份氮化硼,
1~3份氧化钙,
2~3份纳米硅铝粉,
1~2份煅烧高岭土,
2~4份西吡氯铵,
3~4份氯化铬,
2~6份硬脂酸铝,
4~9份苯并三氮唑,
6~8份聚乙烯吡咯烷酮,
4~7份油酰甲胺乙磺酸钠。
2.根据权利要求1所述的专用于紫外LED芯片的封装结构,其特征在于,按重量份计,所述导热绝缘夹层由以下组分组成:
27份聚砜树脂,
36份环氧改性有机硅树脂,
3份改性氮化硅,
1份氧化锆,
2份氮化硼,
1份氧化钙,
2份纳米硅铝粉,
1份煅烧高岭土,
2份西吡氯铵,
3份氯化铬,
2份硬脂酸铝,
4份苯并三氮唑,
6份聚乙烯吡咯烷酮,
4份油酰甲胺乙磺酸钠。
3.根据权利要求1所述的专用于紫外LED芯片的封装结构,其特征在于,按重量份计,所述导热绝缘夹层由以下组分组成:
31份聚砜树脂,
41份环氧改性有机硅树脂,
4份改性氮化硅,
3份氧化锆,
4份氮化硼,
3份氧化钙,
3份纳米硅铝粉,
2份煅烧高岭土,
4份西吡氯铵,
4份氯化铬,
6份硬脂酸铝,
9份苯并三氮唑,
8份聚乙烯吡咯烷酮,
7份油酰甲胺乙磺酸钠。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202308042U (zh) * | 2011-10-22 | 2012-07-04 | 华南师范大学 | 功率型led高散热性能封装结构 |
JP2015018829A (ja) * | 2011-11-11 | 2015-01-29 | パナソニック株式会社 | 高分子構造材 |
CN105482741A (zh) * | 2015-12-15 | 2016-04-13 | 苏州鑫德杰电子有限公司 | 一种电子产品用高强散热粘结材料及其制备方法 |
CN106103346A (zh) * | 2014-03-14 | 2016-11-09 | 大日精化工业株式会社 | 导热性复合氧化物、其制造方法、含导热性复合氧化物的组合物和其使用 |
CN106317878A (zh) * | 2016-08-17 | 2017-01-11 | 安徽福恩光电科技有限公司 | 一种方便散热的led灯散热片 |
-
2017
- 2017-03-01 CN CN201710117785.4A patent/CN106920871A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202308042U (zh) * | 2011-10-22 | 2012-07-04 | 华南师范大学 | 功率型led高散热性能封装结构 |
JP2015018829A (ja) * | 2011-11-11 | 2015-01-29 | パナソニック株式会社 | 高分子構造材 |
CN106103346A (zh) * | 2014-03-14 | 2016-11-09 | 大日精化工业株式会社 | 导热性复合氧化物、其制造方法、含导热性复合氧化物的组合物和其使用 |
CN105482741A (zh) * | 2015-12-15 | 2016-04-13 | 苏州鑫德杰电子有限公司 | 一种电子产品用高强散热粘结材料及其制备方法 |
CN106317878A (zh) * | 2016-08-17 | 2017-01-11 | 安徽福恩光电科技有限公司 | 一种方便散热的led灯散热片 |
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