CN1069150C - 用于制造半导体器件的方法 - Google Patents

用于制造半导体器件的方法 Download PDF

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Publication number
CN1069150C
CN1069150C CN96106920A CN96106920A CN1069150C CN 1069150 C CN1069150 C CN 1069150C CN 96106920 A CN96106920 A CN 96106920A CN 96106920 A CN96106920 A CN 96106920A CN 1069150 C CN1069150 C CN 1069150C
Authority
CN
China
Prior art keywords
polysilicon layer
bit line
insulation film
silicide
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN96106920A
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English (en)
Chinese (zh)
Other versions
CN1146072A (zh
Inventor
黄成敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of CN1146072A publication Critical patent/CN1146072A/zh
Application granted granted Critical
Publication of CN1069150C publication Critical patent/CN1069150C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
CN96106920A 1995-06-30 1996-07-01 用于制造半导体器件的方法 Expired - Fee Related CN1069150C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1019950018865A KR970003508A (ko) 1995-06-30 1995-06-30 반도체소자의 제조방법
KR18865/95 1995-06-30
KR18865/1995 1995-06-30

Publications (2)

Publication Number Publication Date
CN1146072A CN1146072A (zh) 1997-03-26
CN1069150C true CN1069150C (zh) 2001-08-01

Family

ID=19419287

Family Applications (1)

Application Number Title Priority Date Filing Date
CN96106920A Expired - Fee Related CN1069150C (zh) 1995-06-30 1996-07-01 用于制造半导体器件的方法

Country Status (2)

Country Link
KR (1) KR970003508A (ko)
CN (1) CN1069150C (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101552273B (zh) * 2002-09-30 2011-10-26 张国飙 三维只读存储器
US7266798B2 (en) * 2005-10-12 2007-09-04 International Business Machines Corporation Designer's intent tolerance bands for proximity correction and checking
WO2010031203A1 (zh) * 2008-09-16 2010-03-25 上海宏力半导体制造有限公司 具有高电阻系数的半导体电阻元件及其制造方法
CN117177553A (zh) * 2022-05-23 2023-12-05 长鑫存储技术有限公司 半导体结构及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5362662A (en) * 1989-08-11 1994-11-08 Ricoh Company, Ltd. Method for producing semiconductor memory device having a planar cell structure

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5362662A (en) * 1989-08-11 1994-11-08 Ricoh Company, Ltd. Method for producing semiconductor memory device having a planar cell structure

Also Published As

Publication number Publication date
KR970003508A (ko) 1997-01-28
CN1146072A (zh) 1997-03-26

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C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee