CN106835032A - 一种B‑Cr/ta‑C涂层刀具及其制备方法 - Google Patents

一种B‑Cr/ta‑C涂层刀具及其制备方法 Download PDF

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CN106835032A
CN106835032A CN201710123384.XA CN201710123384A CN106835032A CN 106835032 A CN106835032 A CN 106835032A CN 201710123384 A CN201710123384 A CN 201710123384A CN 106835032 A CN106835032 A CN 106835032A
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邢佑强
吴泽
黄鹏
刘磊
张远明
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Abstract

本发明属于机械切削刀具制造技术领域，特别涉及一种B‑Cr/ta‑C涂层刀具及其制备方法。该刀具基体材料为硬质合金或高速钢，采用多弧离子镀+中频磁控溅射的方法制备，其结构为多层结构，刀具表面为B‑Cr/ta‑C层，B‑Cr/ta‑C层与基体之间有TiCrN和Ti过渡层。该刀具表面的B‑Cr/ta‑C层有着非常高的硬度和强度、较低的摩擦系数和较好的热稳定性能，且与基体具有较高的结合强度。切削过程中该刀具能够有效地减小摩擦、抑制粘结、降低切削力和切削温度、减小刀具磨损，从而提高刀具寿命。该涂层刀具可广泛应用于干切削和有色金属及难加工材料的切削加工。

Description

一种B-Cr/ta-C涂层刀具及其制备方法
技术领域
本发明属于机械切削刀具制造领域，涉及了一种B-Cr/ta-C涂层刀具及其制备方法。
背景技术
对刀具进行涂层处理是提高刀具性能的重要途径之一，目前国内外涂层刀具普遍采用TiN、CrN、TiAlN、AlCrN和CrAlTi等多种涂层。DLC涂层由于具有低的摩擦系数、高的硬度和抗磨损性能，广泛应用于切削刀具、齿轮、磨具及工具等表面。然而DLC涂层中SP3键含量一般在30-50％，其硬度一般小于30GPa，且其与基体粘结强度较低。四面体无定型碳(ta-C)中SP3键含量一般在60-90％，且存在SP2键，因此，与DLC相比，ta-C具有更高的硬度和良好的减摩抗磨性能，但由于薄膜中高应力的存在，可能加剧薄膜剥落。
中国专利“申请号201010136163.4”报道了采用磁控溅射方法在硬质合金、高速钢材料表面制备ta-C涂层，该方法制备的ta-C涂层具有较高的硬度和良好的韧性。中国专利“申请号201320221551.1”报道了在手术刀表面沉积纳米ta-C镀层，减小手术过程出血量和细胞的损伤，从而减轻病人痛苦。中国专利“申请号201380013488.5”报道了在塑料食品容器内壁沉积Si-DLC涂层，从而使其具有高的氧阻隔性和优异的机械性能。
发明内容
技术问题：本发明的目的在于克服上述现有技术的不足，提供一种B-Cr/ta-C涂层刀具及其制备方法。该刀具既具有良好的韧性和极高的硬度，同时与基体具有较高的结合强度。干切削时，该刀具能够减小摩擦、抑制粘结、降低切削力和切削温度、减小刀具磨损，从而提高刀具寿命。
技术方案：本发明的一种B-Cr/ta-C涂层刀具通过以下方式实现：
刀具基体材料为高速钢或硬质合金，其特征在于：涂层为多层结构，刀具基体的表面为B-Cr/ta-C涂层，B-Cr/ta-C涂层与基体之间有TiCrN和Ti过渡层。
所述的B-Cr/ta-C涂层中B和Cr含量的原子百分比均在2-5％范围内，TiCrN层中Cr含量的原子百分比在10-20％范围内，B-Cr/ta-C层中SP3键结构含量占80-90％。
所述的B-Cr/ta-C涂层刀具的制备方法采用多弧离子镀+中频磁控溅射共沉积的方法在刀具表面制备Ti+TiCrN过渡层和B-Cr/ta-C涂层，其具体制备步骤为：
1)前处理：将刀具基体材料研磨抛光至镜面，依次放入酒精和丙酮中超声清洗各20-30min，去除表面油渍等污染物，采用真空干燥箱充分干燥后迅速放入镀膜机真空室，真空室本底真空为7.0×10-3Pa，加热至180-190℃，保温时间30-40min；
2)离子清洗：通入Ar气，其压力为0.6-1.5Pa，开启偏压电源，电压800-900V，占空比0.2，辉光放电清洗20-30min；偏压降低至200-300V，开启离子源离子清洗20-30min，开启电弧源Ti靶，偏压400-600V，靶电流40-50A，离子轰击Ti靶1-2min；
3)沉积Ti：调整Ar气压至0.4-0.5Pa，偏压降低至100-200V，电弧镀Ti 2-5min；
4)沉积TiCrN：调整工作气压为0.5-0.6Pa，偏压80-150V，Ti靶电流80-100A；开启N2，调整N2流量为150-200sccm，沉积温度为220-260℃，开启中频Cr靶电流10-20A，电弧镀+中频磁控溅射沉积TiCrN 5-10min；
5)沉积B-Cr/ta-C涂层：关闭Ti靶材，关闭N2；调整Ar气压至0.7-1.5Pa，偏压至150-300V，调整Cr靶电流3-5A，开启B靶电弧电源，电流调制3-5A，开启石墨阴极电弧电源，电流调制60-100A，电弧镀+中频磁控溅射沉积B-Cr/ta-C50-60min；
6)后处理：关闭Cr靶、B靶和石墨靶，关闭偏压电源、离子源及气体源，保温30-40min，涂层结束。
有益效果：该刀具涂层为多层结构，刀具表面为B-Cr/ta-C涂层，B-Cr/ta-C涂层与基体之间为TiCrN和Ti过渡层，以减小残余应力，增加涂层与刀具基体之间的结合强度。掺杂Cr和B的ta-C涂层能够显著的降低涂层内应力、改善其热稳定性，且有助于降低涂层表面粗糙度并提高其致密性。该刀具既具有良好的韧性和极高的硬度，同时与基体具有较高的结合强度。干切削时，该刀具能够减小摩擦、抑制粘结、降低切削力和切削温度、减小刀具磨损，从而提高刀具寿命。
附图说明
图1为本发明的B-Cr/ta-C涂层刀具的结构示意图。其中有：刀具基体1，Ti过渡层2，TiCrN过渡层3，B-Cr/ta-C涂层4。
具体实施方式
实例1：B-Cr/ta-C涂层刀具及其制备方法，刀具基体材料为高速钢或硬质合金，涂层为多层结构，刀具表面为B-Cr/ta-C涂层，B-Cr/ta-C涂层与基体之间有TiCrN和Ti过渡层。B-Cr/ta-C涂层刀具的制备方法是采用多弧离子镀+中频磁控溅射共沉积的方式。其具体制备步骤为：
1)前处理：将刀具基体材料研磨抛光至镜面，依次放入酒精和丙酮中超声清洗各20min，去除表面油渍等污染物，采用真空干燥箱充分干燥后迅速放入镀膜机真空室。真空室本底真空为7.0×10-3Pa，加热至180℃，保温时间30min。
2)离子清洗：通入Ar气，其压力为0.8Pa，开启偏压电源，电压800V，占空比0.2，辉光放电清洗20min；偏压降低至200V，开启离子源离子清洗30min，开启电弧源Ti靶，偏压400V，靶电流40A，离子轰击Ti靶1min。
3)沉积Ti：调整Ar气压至0.4Pa，偏压降低至100V，电弧镀Ti 2min。
4)沉积TiCrN：调整工作气压为0.5Pa，偏压90V，Ti靶电流80A；开启N2，调整N2流量为150sccm，沉积温度为220℃，开启中频Cr靶电流10A，电弧镀+中频磁控溅射沉积TiCrN6min。
5)沉积B-Cr/ta-C涂层：关闭Ti靶材，关闭N2。调整Ar气压至0.8Pa，偏压至180V。调整Cr靶电流3A，开启B靶电弧电源，电流调制3A，开启石墨阴极电弧电源，电流调制60A，电弧镀+中频磁控溅射沉积B-Cr/ta-C 50min。
6)后处理：关闭Cr靶、B靶和石墨靶，关闭偏压电源、离子源及气体源，保温40min，涂层结束。
实例2：B-Cr/ta-C涂层刀具及其制备方法，刀具基体材料为高速钢或硬质合金，涂层为多层结构，刀具表面为B-Cr/ta-C涂层，B-Cr/ta-C涂层与基体之间有TiCrN和Ti过渡层。B-Cr/ta-C涂层刀具的制备方法是采用多弧离子镀+中频磁控溅射共沉积的方式。其具体制备步骤为：
1)前处理：将刀具基体材料研磨抛光至镜面，依次放入酒精和丙酮中超声清洗各30min，去除表面油渍等污染物，采用真空干燥箱充分干燥后迅速放入镀膜机真空室。真空室本底真空为7.0×10-3Pa，加热至180℃，保温时间40min。
2)离子清洗：通入Ar气，其压力为1.2Pa，开启偏压电源，电压900V，占空比0.2，辉光放电清洗30min；偏压降低至200V，开启离子源离子清洗20min，开启电弧源Ti靶，偏压550V，靶电流50A，离子轰击Ti靶2min。
3)沉积Ti：调整Ar气压至0.5Pa，偏压降低至180V，电弧镀Ti 4min。
4)沉积TiCrN：调整工作气压为0.6Pa，偏压120V，Ti靶电流100A；开启N2，调整N2流量为200sccm，沉积温度为250℃，开启中频Cr靶电流20A，电弧镀+中频磁控溅射沉积TiCrN8min。
5)沉积B-Cr/ta-C涂层：关闭Ti靶材，关闭N2。调整Ar气压至1.5Pa，偏压至260V。调整Cr靶电流5A，开启B靶电弧电源，电流调制5A，开启石墨阴极电弧电源，电流调制100A，电弧镀+中频磁控溅射沉积B-Cr/ta-C 60min。
6)后处理：关闭Cr靶、B靶和石墨靶，关闭偏压电源、离子源及气体源，保温30min，涂层结束。

Claims (3)

1.一种B-Cr/ta-C涂层刀具，刀具基体材料为高速钢或硬质合金，其特征在于：涂层为多层结构，刀具基体的表面为B-Cr/ta-C涂层，B-Cr/ta-C涂层与基体之间有TiCrN和Ti过渡层。
2.根据权利要求1所述的一种B-Cr/ta-C涂层刀具，其特征在于：所述的B-Cr/ta-C涂层中B和Cr含量的原子百分比均在2-5％范围内，TiCrN层中Cr含量的原子百分比在10-20％范围内，B-Cr/ta-C层中SP3键结构含量占80-90％。
3.一种如权利要求1或2所述的B-Cr/ta-C涂层刀具的制备方法，其特征在于采用多弧离子镀+中频磁控溅射共沉积的方法在刀具表面制备Ti+TiCrN过渡层和B-Cr/ta-C涂层，其具体制备步骤为：
1)前处理：将刀具基体材料研磨抛光至镜面，依次放入酒精和丙酮中超声清洗各20-30min，去除表面油渍等污染物，采用真空干燥箱充分干燥后迅速放入镀膜机真空室，真空室本底真空为7.0×10-3Pa，加热至180-190℃，保温时间30-40min；
2)离子清洗：通入Ar气，其压力为0.6-1.5Pa，开启偏压电源，电压800-900V，占空比0.2，辉光放电清洗20-30min；偏压降低至200-300V，开启离子源离子清洗20-30min，开启电弧源Ti靶，偏压400-600V，靶电流40-50A，离子轰击Ti靶1-2min；
3)沉积Ti：调整Ar气压至0.4-0.5Pa，偏压降低至100-200V，电弧镀Ti 2-5min；
4)沉积TiCrN：调整工作气压为0.5-0.6Pa，偏压80-150V，Ti靶电流80-100A；开启N2，调整N2流量为150-200sccm，沉积温度为220-260℃，开启中频Cr靶电流10-20A，电弧镀+中频磁控溅射沉积TiCrN 5-10min；
5)沉积B-Cr/ta-C涂层：关闭Ti靶材，关闭N2；调整Ar气压至0.7-1.5Pa，偏压至150-300V，调整Cr靶电流3-5A，开启B靶电弧电源，电流调制3-5A，开启石墨阴极电弧电源，电流调制60-100A，电弧镀+中频磁控溅射沉积B-Cr/ta-C 50-60min；
6)后处理：关闭Cr靶、B靶和石墨靶，关闭偏压电源、离子源及气体源，保温30-40min，涂层结束。
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