CN106830920A - 一种低残压直流非线性压敏电阻制备方法 - Google Patents

一种低残压直流非线性压敏电阻制备方法 Download PDF

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CN106830920A
CN106830920A CN201611027971.0A CN201611027971A CN106830920A CN 106830920 A CN106830920 A CN 106830920A CN 201611027971 A CN201611027971 A CN 201611027971A CN 106830920 A CN106830920 A CN 106830920A
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direct current
residual voltage
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何金良
胡军
孟鹏飞
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Tsinghua University
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Abstract

本发明公开了一种低残压直流非线性压敏电阻制备方法。一种老化性能优良的低残压直流压敏电阻制备方法，包括辅料配制步骤、混料步骤、成型步骤、烧结步骤、磨片步骤。所述辅助添加浆料的成分包括Bi2O3、Sb2O3、MnO2、Co2O3、NiO、B2O3、Al(NO3)3、K2SO4、CaCO3、去离子水。其有益效果是：采用本发明方法带来的有益变化是，基本保持了直流压敏电阻的制造工艺，使得电阻片的制造周期缩短，不使用渗铋工艺，直流压敏电阻的制造工艺被简化。由于新发明在配方和工艺上均进行了改进，使得新的直流压敏电阻具有优良的特性。

Description

一种低残压直流非线性压敏电阻制备方法
技术领域
本发明涉及氧化锌电阻制备领域，特别是一种低残压直流非线性压敏电阻制备方法。
背景技术
氧化锌压敏电阻，因其具有较为优良的非线性特性，在限制电力系统过电压领域得到了较为广泛的应用。但是，传统的直流氧化锌压敏电阻片生产配方以及制作工艺其存在如下问题：1.在制作的过程中，要使用渗铋工艺；2.压敏电阻的生产制备周期较为长、复杂，不同生产批次的产品性能存在差异；3.电阻片的残压比较大，保护性能有待提高；4.电阻片的残压较高，已不再能够满足工业需求。
因此，随着产品技术等级的不断提高，对产品性能的要求也越来越高，原有的直流压敏电阻阀片已不能满足要求，急需开新型的直流氧化锌压敏电阻。
发明内容
本发明的目的是为了解决上述问题，设计了一种低残压直流非线性压敏电阻制备方法。具体设计方案为：
一种低残压直流非线性压敏电阻制备方法，包括辅料配制步骤、混料步骤、成型步骤、烧结步骤、磨片步骤，所述辅料配制步骤、混料步骤、成型步骤、烧结步骤、磨片步骤依次进行经过辅料配制步骤获得辅助添加浆料，所述辅助添加浆料经过混合步骤获得ZnO浆料，所述ZnO浆料经过成型步骤获得ZnO坯体，所述ZnO坯体经过介绍步骤获得ZnO陶瓷，将所述ZnO陶瓷经过磨片步骤获得压敏电阻。
所述辅料配制步骤中，
所述辅助添加浆料的成分包括Bi2O3、Sb2O3、MnO2、Co2O3、NiO、B2O3、Al(NO3)3、K2SO4、CaCO3、去离子水，
所述辅助添加浆料的制备方法为：将Bi2O3、Sb2O3、MnO2、Co2O3、NiO、B2O3、Al(NO3)3、K2SO4、CaCO3放入球磨机中获得辅助添加粉料，然后加入去离子水、结合剂、分散剂、消泡剂，混合球磨，球磨120min，
所述辅助添加浆料中各成分的质量份数/摩尔份数比为：
所述辅助添加浆料中，辅助添加粉料与去离子水的质量份数为辅助添加粉料
1份、去离子水2份。
所述混料步骤中，将辅助添加浆料与ZnO混合获得ZnO粉料，再加入去离子水，混合放入超细砂磨机砂磨，砂磨60min，使所有混合原料分散均匀为止，得到混合均匀的ZnO浆料，
所述ZnO浆料中，所述ZnO粉料与加入去离子水的质量份数为ZnO粉料1份、去离子水1份。
所述成型步骤中，对ZnO浆料进行喷雾干燥，经喷雾干燥后的ZnO浆料含水量为1％，沉浮后使用液压压片机以及圆柱形模具，将颗粒料压片成型，获得ZnO坯体，成型压力为150MPa，保压时间3min。
所述烧结步骤中，将ZnO坯体在封闭的气氛条件下，
以200℃/h的升温速度，将烧结温度提高至400℃；
在400℃的烧结温度下，持续保温排胶5；，
将烧结温度提高至1200℃；
在1200℃的烧结温度下，保温3h，使坯体致密，获得ZnO陶瓷。
在磨片步骤中，对ZnO陶瓷进行磨片处理，并在磨片处理后在所述ZnO陶瓷的表面喷制铝电极，获得压敏电阻。
通过本发明的上述技术方案得到的低残压直流非线性压敏电阻制备方法，其有益效果是：
采用本发明方法带来的有益变化是，基本保持了直流压敏电阻的制造工艺，使得电阻片的制造周期缩短，不使用渗铋工艺，直流压敏电阻的制造工艺被简化。由于新发明在配方和工艺上均进行了改进，使得新的直流压敏电阻具有优良的特性。
具体实施方式
下面对本发明进行具体描述。
一种低残压直流非线性压敏电阻制备方法，包括辅料配制步骤、混料步骤、
成型步骤、烧结步骤、磨片步骤，所述辅料配制步骤、混料步骤、成型步骤、烧结步骤、磨片步骤依次进行经过辅料配制步骤获得辅助添加浆料，所述辅助添加浆料经过混合步骤获得ZnO浆料，所述ZnO浆料经过成型步骤获得ZnO坯体，所述ZnO坯体经过介绍步骤获得ZnO陶瓷，将所述ZnO陶瓷经过磨片步骤获得压敏电阻。
所述辅料配制步骤中，
所述辅助添加浆料的成分包括Bi2O3、Sb2O3、MnO2、Co2O3、NiO、B2O3、Al(NO3)3、K2SO4、CaCO3、去离子水，
所述辅助添加浆料的制备方法为：将Bi2O3、Sb2O3、MnO2、Co2O3、NiO、B2O3、Al(NO3)3、K2SO4、CaCO3放入球磨机中获得辅助添加粉料，然后加入去离子水、结合剂、分散剂、消泡剂，混合球磨，球磨120min，
所述辅助添加浆料中各成分的质量份数/摩尔份数比为：
所述辅助添加浆料中，辅助添加粉料与去离子水的质量份数为辅助添加粉料1份、去离子水2份。
所述混料步骤中，将辅助添加浆料与ZnO混合获得ZnO粉料，再加入去离子水，混合放入超细砂磨机砂磨，砂磨60min，使所有混合原料分散均匀为止，得到混合均匀的ZnO浆料，
所述ZnO浆料中，所述ZnO粉料与加入去离子水的质量份数为ZnO粉料1份、去离子水1份。
所述成型步骤中，对ZnO浆料进行喷雾干燥，经喷雾干燥后的ZnO浆料含水量为1％，沉浮后使用液压压片机以及圆柱形模具，将颗粒料压片成型，获得ZnO坯体，成型压力为150MPa，保压时间3min。
所述烧结步骤中，将ZnO坯体在封闭的气氛条件下，
以200℃/h的升温速度，将烧结温度提高至400℃；
在400℃的烧结温度下，持续保温排胶5；，
将烧结温度提高至1200℃；
在1200℃的烧结温度下，保温3h，使坯体致密，获得ZnO陶瓷。
在磨片步骤中，对ZnO陶瓷进行磨片处理，并在磨片处理后在所述ZnO陶瓷的表面喷制铝电极，获得压敏电阻。
实施例1
按照以下方式配料：氧化锌125kg，氧化锑6.2kg,氧化铋6.8kg，氧化锰0.95kg,氧化钴1.58kg，氧化亚镍1.96kg,氧化硼0.05kg，硝酸铝0.04kg,硫酸钾2g,碳酸钙10g。将配好的原料，加入30kg纯水，18kg结合剂溶液，600ml分散剂，90g消泡剂，混合球磨120分钟，然后进行喷雾干燥。取造粒料进行压制成型，排胶，上高阻层，烧成，磨片，并喷制铝电极。然后进行残压测量，及老化试验。具体的数据如下：
表1电阻片的残压测量数据 电阻片规格D62
注：传统D7直流电阻片其压比为1.72～1.75
表2电阻片的直流老化数据
按照本专利给出的范围配料，可以得到压比低，直流老化特性好的电阻片。
实施例2：
按照以下方式配料：氧化锌125kg，氧化锑6.2kg,氧化铋6.8kg，氧化锰0.95kg,氧化钴1.58kg，氧化亚镍1.96kg,氧化硼0.05kg，硝酸铝0.04kg,硫酸钾4.5g,碳酸钙9.5g。将配好的原料，加入30kg纯水，18kg结合剂溶液，600ml分散剂，90g消泡剂，混合球磨120分钟，然后进行喷雾干燥。取造粒料进行压制成型，排胶，上高阻层，烧成，磨片，并喷制铝电极。然后进行残压测量，及老化试验。具体的数据如下：
表3电阻片的残压测量数据 电阻片规格D62
注：传统D7直流电阻片其压比为1.72～1.75
表4电阻片的直流老化数据
按照本专利给出的范围配料，可以得到压比低，直流老化特性好的电阻片。
上述技术方案仅体现了本发明技术方案的优选技术方案，本技术领域的技术人员对其中某些部分所可能做出的一些变动均体现了本发明的原理，属于本发明的保护范围之内。

Claims (6)

1.一种低残压直流非线性压敏电阻制备方法，包括辅料配制步骤、混料步骤、成型步骤、烧结步骤、磨片步骤，其特征在于，所述辅料配制步骤、混料步骤、成型步骤、烧结步骤、磨片步骤依次进行经过辅料配制步骤获得辅助添加浆料，所述辅助添加浆料经过混合步骤获得ZnO浆料，所述ZnO浆料经过成型步骤获得ZnO坯体，所述ZnO坯体经过介绍步骤获得ZnO陶瓷，将所述ZnO陶瓷经过磨片步骤获得压敏电阻。
2.根据权利要求1中所述的低残压直流非线性压敏电阻制备方法，其特征在于，所述辅料配制步骤中，
所述辅助添加浆料的成分包括Bi2O3、Sb2O3、MnO2、Co2O3、NiO、B2O3、Al(NO3)3、K2SO4、CaCO3、去离子水，
所述辅助添加浆料的制备方法为：将Bi2O3、Sb2O3、MnO2、Co2O3、NiO、B2O3、Al(NO3)3、K2SO4、CaCO3放入球磨机中获得辅助添加粉料，然后加入去离子水、结合剂、分散剂、消泡剂，混合球磨，球磨120min，
所述辅助添加浆料中各成分的质量份数/摩尔份数比为：
所述辅助添加浆料中，辅助添加粉料与去离子水的质量份数为辅助添加粉料1份、去离子水2份。
3.根据权利要求1中所述的低残压直流非线性压敏电阻制备方法，其特征在于，所述混料步骤中，将辅助添加浆料与ZnO混合获得ZnO粉料，再加入去离子水，混合放入超细砂磨机砂磨，砂磨60min，使所有混合原料分散均匀为止，得到混合均匀的ZnO浆料，
所述ZnO浆料中，所述ZnO粉料与加入去离子水的质量份数为ZnO粉料1份、去离子水1份。
4.根据权利要求1中所述的低残压直流非线性压敏电阻制备方法，其特征在于，所述成型步骤中，
对ZnO浆料进行喷雾干燥，经喷雾干燥后的ZnO浆料含水量为1％，沉浮后使用液压压片机以及圆柱形模具，将颗粒料压片成型，获得ZnO坯体，
成型压力为150MPa，保压时间3min。
5.根据权利要求1中所述的低残压直流非线性压敏电阻制备方法，其特征在于，所述烧结步骤中，将ZnO坯体在封闭的气氛条件下，
以200℃/h的升温速度，将烧结温度提高至400℃；
在400℃的烧结温度下，持续保温排胶5；，
将烧结温度提高至1200℃；
在1200℃的烧结温度下，保温3h，使坯体致密，获得ZnO陶瓷。
6.根据权利要求1中所述的低残压直流非线性压敏电阻制备方法，其特征在于，在磨片步骤中，对ZnO陶瓷进行磨片处理，并在磨片处理后在所述ZnO陶瓷的表面喷制铝电极，获得压敏电阻。
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