CN106809869B - 一种ZnO微米线的制备方法 - Google Patents
一种ZnO微米线的制备方法 Download PDFInfo
- Publication number
- CN106809869B CN106809869B CN201710032219.3A CN201710032219A CN106809869B CN 106809869 B CN106809869 B CN 106809869B CN 201710032219 A CN201710032219 A CN 201710032219A CN 106809869 B CN106809869 B CN 106809869B
- Authority
- CN
- China
- Prior art keywords
- quartz ampoule
- big
- small
- temperature
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G9/00—Compounds of zinc
- C01G9/02—Oxides; Hydroxides
- C01G9/03—Processes of production using dry methods, e.g. vapour phase processes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710032219.3A CN106809869B (zh) | 2017-01-16 | 2017-01-16 | 一种ZnO微米线的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710032219.3A CN106809869B (zh) | 2017-01-16 | 2017-01-16 | 一种ZnO微米线的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106809869A CN106809869A (zh) | 2017-06-09 |
CN106809869B true CN106809869B (zh) | 2018-01-30 |
Family
ID=59111881
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710032219.3A Active CN106809869B (zh) | 2017-01-16 | 2017-01-16 | 一种ZnO微米线的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106809869B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108807570B (zh) * | 2018-06-28 | 2020-04-14 | 华南师范大学 | 嵌入柔性衬底的ZnO微米线阵列紫外探测器的制备方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1252311C (zh) * | 2002-07-17 | 2006-04-19 | 清华大学 | 物理气相沉积制备大面积氧化锌纳米线膜层的方法 |
CN100386884C (zh) * | 2006-02-23 | 2008-05-07 | 北京科技大学 | 一种低温制备掺锰氧化锌纳米线稀磁半导体的方法 |
CN101041557B (zh) * | 2007-03-01 | 2010-11-03 | 华东师范大学 | 一种生长在玻璃衬底上的图形化ZnO纳米线结构及其制备方法 |
CN101045553A (zh) * | 2007-04-06 | 2007-10-03 | 北京科技大学 | 一种锡掺杂氧化锌纳米线的制备方法 |
CN101319369B (zh) * | 2008-04-15 | 2011-06-22 | 辽宁师范大学 | 一种p型ZnO纳米线的制备方法 |
CN101700868B (zh) * | 2009-11-20 | 2011-06-22 | 北京科技大学 | 一种超长锑掺杂氧化锌微米线的制备方法 |
CN102041547B (zh) * | 2010-12-14 | 2012-05-30 | 北京大学 | 一种制备磷掺杂氧化锌纳米线的方法 |
CN104418380B (zh) * | 2013-09-05 | 2016-03-16 | 国家纳米科学中心 | 一种氧化锌纳米线阵列结构及其制备方法 |
CN103579415B (zh) * | 2013-10-22 | 2016-08-31 | 华中科技大学 | 一种氧化锌纳米线阵列紫外光电探测器的制备方法 |
-
2017
- 2017-01-16 CN CN201710032219.3A patent/CN106809869B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN106809869A (zh) | 2017-06-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Xu et al. | Density-controlled growth of aligned ZnO nanowire arrays by seedless chemical approach on smooth surfaces | |
CN100428502C (zh) | 一种a-b取向ZnO纳米线阵列的制备方法 | |
CN103397382A (zh) | 氧化锌纳米棒阵列薄膜的制备方法 | |
CN103924298A (zh) | 一种氧化镓异质结结构及其生长方法和专用装置 | |
CN102040187B (zh) | 一种核壳结构ZnO纳米线阵列的生长方法 | |
CN107881472A (zh) | 一种CsPbI3薄膜的制备方法 | |
CN110416065A (zh) | 二硫化钼/二硒化钨垂直异质结的制备方法 | |
Chee et al. | Optical and structural characterization of solution processed zinc oxide nanorods via hydrothermal method | |
CN107287578A (zh) | 一种大范围均匀双层二硫化钼薄膜的化学气相沉积制备方法 | |
CN103322800A (zh) | 一种全透明管式电阻炉 | |
CN106809869B (zh) | 一种ZnO微米线的制备方法 | |
CN104418380B (zh) | 一种氧化锌纳米线阵列结构及其制备方法 | |
Bhutto et al. | Controlled growth of zinc oxide nanowire arrays by chemical vapor deposition (CVD) method | |
CN103710746A (zh) | 纳米结构碲单晶的制备方法 | |
CN108511324A (zh) | 一种γ相硒化铟纳米片的外延生长方法 | |
CN101691241A (zh) | 一种生长ZnS单晶纳米线束的方法 | |
CN105839189A (zh) | 一种二维原子层厚度ZnO单晶纳米片及其制备方法 | |
CN102260907A (zh) | 一种ZnO纳米同质p-n结阵列的制备方法 | |
CN105858715A (zh) | 一种制备富受主型ZnO微米管的方法 | |
Li et al. | Synthesis and properties of aligned ZnO microtube arrays | |
CN101289172B (zh) | 通过气相传输法制备InN纳米线和纳米棒的方法 | |
CN109972202A (zh) | 一种三氧化钨单晶纳米线的制备方法 | |
CN109706434A (zh) | 一种固溶体纳米线及其制备方法和用途 | |
CN103290481B (zh) | 一种超细单晶Si纳米线及其制备方法 | |
CN108147418A (zh) | 一种平行排列的SiO2纳米线及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Su Shichen Inventor after: Yan Shanshan Inventor after: Zhang Han Inventor after: Ling Zhicong Inventor before: Su Shichen Inventor before: Yan Shanshan Inventor before: Zhang Han |
|
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211210 Address after: 511500 No. 01, 3rd floor, B07, headquarters building, Tian'an Zhigu science and Technology Industrial Park, 18 Chuangxing Avenue, Qingyuan high tech Industrial Development Zone, Guangdong Province Patentee after: Huaqing Chuangzhi photoelectric technology (Qingyuan) Co., Ltd Address before: 510631 No. 55, Zhongshan Avenue, Tianhe District, Guangdong, Guangzhou Patentee before: SOUTH CHINA NORMAL University |