CN106795620A - 磁性材料溅射靶 - Google Patents

磁性材料溅射靶 Download PDF

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Publication number
CN106795620A
CN106795620A CN201580008580.1A CN201580008580A CN106795620A CN 106795620 A CN106795620 A CN 106795620A CN 201580008580 A CN201580008580 A CN 201580008580A CN 106795620 A CN106795620 A CN 106795620A
Authority
CN
China
Prior art keywords
powder
sputtering target
sputtering
target
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201580008580.1A
Other languages
English (en)
Chinese (zh)
Inventor
池田祐希
荒川笃俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JX Nippon Mining and Metals Corp
Original Assignee
JX Nippon Mining and Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JX Nippon Mining and Metals Corp filed Critical JX Nippon Mining and Metals Corp
Priority to CN202210309573.7A priority Critical patent/CN114807874A/zh
Publication of CN106795620A publication Critical patent/CN106795620A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Record Carriers (AREA)
CN201580008580.1A 2014-03-18 2015-03-13 磁性材料溅射靶 Pending CN106795620A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210309573.7A CN114807874A (zh) 2014-03-18 2015-03-13 磁性材料溅射靶

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014055092 2014-03-18
JP2014-055092 2014-03-18
PCT/JP2015/057428 WO2015141571A1 (ja) 2014-03-18 2015-03-13 磁性材スパッタリングターゲット

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202210309573.7A Division CN114807874A (zh) 2014-03-18 2015-03-13 磁性材料溅射靶

Publications (1)

Publication Number Publication Date
CN106795620A true CN106795620A (zh) 2017-05-31

Family

ID=54144540

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202210309573.7A Pending CN114807874A (zh) 2014-03-18 2015-03-13 磁性材料溅射靶
CN201580008580.1A Pending CN106795620A (zh) 2014-03-18 2015-03-13 磁性材料溅射靶

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN202210309573.7A Pending CN114807874A (zh) 2014-03-18 2015-03-13 磁性材料溅射靶

Country Status (5)

Country Link
JP (1) JP6030271B2 (ja)
CN (2) CN114807874A (ja)
MY (1) MY173140A (ja)
SG (1) SG11201604730PA (ja)
WO (1) WO2015141571A1 (ja)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080202916A1 (en) * 2007-02-22 2008-08-28 Heraeus Incorporated Controlling magnetic leakage flux in sputtering targets containing magnetic and non-magnetic elements
CN101278071A (zh) * 2005-10-04 2008-10-01 日矿金属株式会社 溅射靶
WO2012029498A1 (ja) * 2010-08-31 2012-03-08 Jx日鉱日石金属株式会社 Ｆｅ－Ｐｔ系強磁性材スパッタリングターゲット
JP4970633B1 (ja) * 2010-12-15 2012-07-11 Ｊｘ日鉱日石金属株式会社 強磁性材スパッタリングターゲット及びその製造方法
CN103270554A (zh) * 2010-12-20 2013-08-28 吉坤日矿日石金属株式会社 分散有C粒子的Fe-Pt型溅射靶
CN103459656A (zh) * 2011-03-30 2013-12-18 吉坤日矿日石金属株式会社 磁记录膜用溅射靶

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000169960A (ja) * 1998-12-04 2000-06-20 Japan Energy Corp 光ディスク記録膜形成用スパッタリングターゲット
JP2009191359A (ja) * 2008-01-15 2009-08-27 Hitachi Metals Ltd Ｆｅ−Ｃｏ−Ｚｒ系合金ターゲット材
CN102333905B (zh) * 2009-03-27 2013-09-04 吉坤日矿日石金属株式会社 非磁性材料粒子分散型强磁性材料溅射靶
MY167825A (en) * 2012-06-18 2018-09-26 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording film

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101278071A (zh) * 2005-10-04 2008-10-01 日矿金属株式会社 溅射靶
US20080202916A1 (en) * 2007-02-22 2008-08-28 Heraeus Incorporated Controlling magnetic leakage flux in sputtering targets containing magnetic and non-magnetic elements
WO2012029498A1 (ja) * 2010-08-31 2012-03-08 Jx日鉱日石金属株式会社 Ｆｅ－Ｐｔ系強磁性材スパッタリングターゲット
JP4970633B1 (ja) * 2010-12-15 2012-07-11 Ｊｘ日鉱日石金属株式会社 強磁性材スパッタリングターゲット及びその製造方法
CN103097570A (zh) * 2010-12-15 2013-05-08 吉坤日矿日石金属株式会社 强磁性材料溅射靶及其制造方法
CN103270554A (zh) * 2010-12-20 2013-08-28 吉坤日矿日石金属株式会社 分散有C粒子的Fe-Pt型溅射靶
CN103459656A (zh) * 2011-03-30 2013-12-18 吉坤日矿日石金属株式会社 磁记录膜用溅射靶

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
马礼敦: "《高等结构分析(第二版)》", 31 May 2006, 复旦大学出版社 *

Also Published As

Publication number Publication date
CN114807874A (zh) 2022-07-29
JPWO2015141571A1 (ja) 2017-04-06
WO2015141571A1 (ja) 2015-09-24
MY173140A (en) 2019-12-31
JP6030271B2 (ja) 2016-11-24
SG11201604730PA (en) 2016-08-30

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SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20170531