CN106732664A - 复合金纳米团簇抑制硫化镉光腐蚀的方法及其制备方法 - Google Patents
复合金纳米团簇抑制硫化镉光腐蚀的方法及其制备方法 Download PDFInfo
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- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 title claims abstract description 7
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Abstract
本申请提出一种复合金纳米团簇抑制硫化镉光腐蚀的方法及其制备方法,包括如下步骤:(1)硫源溶液和镉源溶液以水热合成法制得CdS纳米晶粒;(2)金源溶液中加入巯基配合物,制得金纳米团簇分散液;(3)CdS纳米晶粒超声分散制得悬浊液,并加入金纳米团簇分散液,通过纳米自组装将所述金纳米团簇结合到CdS上,即得CdS‑Aux复合催化剂。与现有技术相比,本发明具有以下优点:能够提高CdS的光催化活性,可有效抑制CdS的光腐蚀,可以同时提高CdS的光催化活性和光稳定性;纯液相湿法合成,制备工艺简单,反应条件温和,能耗低、易于规模化推广应用。
Description
技术领域
本发明涉及光催化材料制备技术领域,具体涉及一种复合金纳米团簇抑制硫化镉光腐蚀的方法及其制备方法。
背景技术
CdS是一种良好的窄带半导体(2.4eV),对可见光有优异的光电转化性能,被广泛用于光敏材料、光催化剂和太阳能电池等光电领域。但CdS光稳定性差,在光激发下容易发生自腐蚀,极大降低了光电转化的效率,大大限制了它的应用。此外,因光腐蚀将部分光生电荷用于氧化或还原半导体自身,降低了光生电荷的利用效率,并且破坏了半导体的本体结构,向水体或空气中引入有毒的重金属离子(Cd2+)、硫氧化物和氮氧化物等污染物,带来二次污染。因此如何有效的抑制半导体的光腐蚀,是一个非常重要的研究课题。
研究者对半导体光腐蚀抑制也进行了很多研究,主要是通过添加牺牲剂,用光稳定的材料涂层或包覆光腐蚀半导体。添加牺牲剂并没有从本质上抑制催化剂的光腐蚀,而是利用牺牲剂优先地消除光生电子或空穴,使半导体本身得到保护。该方法成本高,易引入二次污染,使其实际应用价值大大受限[Chem.Rev.,2010,110,6503-6570]。除此之外,抑制光腐蚀主要的思路是用薄层稳定的半导体或惰性材料对光腐蚀半导体进行包覆,避免其与反应物或氧源直接接触,从而抑制其光腐蚀。CN 104923261A(专利申请号201510246053.6)提出了一种用原子层沉积技术在CdS表面包覆的保护层(如:TiO2、ZnO、Al2O3、AZO等),可延长CdS的光催化寿命。CN 103920504A(专利申请号201410157431.9)提出了一种用TiO2包裹CdS形成树枝形中空CdS@TiO2,可使CdS具有良好的稳定性,有效避免了CdS产生的光腐蚀现象。CN 103979523B(专利申请号201410174513.4)将CdS填充到碳纳米管中,可提高其活性和光稳定性。但是这些方法操作难度大,很难做到完全无孔的包覆,并且包覆层容易过厚,降低半导体的光吸收和电荷传输效率,减弱了半导体的光催化性能。而半导体光腐蚀是因其受光激发产生的电子或空穴将自身氧化或还原所致,若及时地将光生电子和空穴从半导体上转移可从根本上抑制其光腐蚀。朱永法等用聚苯胺[J.Phys.Chem.C 2010,114,5822–5826]和C3N4[Energy Environ.Sci.,2011,4,2922–2929]与CdS复合,CdS上的光生空穴转移到聚苯胺和C3N4上,从而有效抑制了它们因空穴氧化所致的光腐蚀。因而快速地转移光腐蚀半导体上的光生电荷是一条抑制其光腐蚀的有效途径。
Au纳米团簇是由几个到几百个金原子堆积形成的小颗粒,拥有良好的可见光吸收性能,P.V.Kamat等[J.Am.Chem.Soc.,2013,135,8822-8825]将Aux-GSH纳米团簇用作TiO2基太阳能电池的可见光敏化剂。在可见光激发下,Au纳米团簇HOMO基态的电子被激发至LUMO,然后再注入到TiO2的导带,实现了和CdS敏化电池相当的能量转化效率(高达2.3%)。随后他们将Au纳米团簇用作粉末TiO2光催化剂的敏化剂[J.Am.Chem.Soc.,2014,136,6075-6082],在中性水中实现了高效的可见光催化分解水产氢。H.García等[J.Am.Chem.Soc.,2011,133,595–602]将平均粒径1.87nm的Au纳米团簇沉积到TiO2上,以AgNO3作为电子捕获剂,在可见光下实现了高效稳定的光催化氧化水产氧反应。由此可见,Au纳米团簇在光催化氧化和还原反应中都拥有很好的光稳定性。此外,通过调节金属纳米团簇的尺寸、组成和配体等可对其能级带隙进行调变。J.H.Bang等[J.Am.Chem.Soc.,2016,138,390–401]在Au纳米团簇敏化TiO2基太阳能电池过程中,通过调控Au纳米团簇的尺寸,对其能级带隙进行调变,并在优化尺寸的Au纳米团簇敏化TiO2基太阳能电池上实现了高达3.8%的能量转化效率。Y.Negishi等[Chem.Commun.,2010,46,4713–4715]通过Ag掺杂对Au纳米团簇的电子结构进行了连续的调节。综上所述,Au纳米团簇拥有良好的光稳定性和能级带隙灵活可调的独特性能,可作为一种良好的提高半导体光活性和抑制光腐蚀的复合材料。
但是,目前面临着如何将金纳米团簇材料与经典的光催化材料复合制备复合光催化剂并将其应用于光催化降解有机污染物领域的难题。
发明内容
针对上述问题,本发明提出一种复合金纳米团簇抑制硫化镉光腐蚀的方法及其制备方法,该方法将CdS与具有良好光稳定性的金纳米团簇复合制备得到的复合光催化剂,同时提高CdS的光催化活性和光稳定性,而且制备条件温和、可控性强。
复合金纳米团簇抑制硫化镉光腐蚀的方法,在水热合成的CdS纳米颗粒表面复合金纳米团簇,制备出一种CdS复合金纳米团簇的CdS-Aux光催化剂。
一种制备上述所述CdS-Aux光催化剂的方法,包括如下步骤:
(1)以水热合成法制备CdS纳米晶粒:硫源溶液和镉源溶液混合均匀,所述镉源溶液和所述硫源溶液的摩尔比为1:1~1:3,搅拌,静置过夜,过滤,去离子水洗涤,然后将上述洗涤后物质转入水热釜中,加入蒸馏水,加热晶化,过滤,干燥,即制得CdS纳米晶粒;
(2)金纳米团簇分散液的制备:在金源溶液中加入巯基配合物,所述金源与所述巯基配合物的摩尔比为1:1~1:3,搅拌至无色,60~80℃反应20~30h,离心,过滤,洗涤,超声分散于去离子水中,即制的金纳米团簇分散液;
(3)CdS-Aux复合催化剂的制备:将步骤(1)中制得的CdS纳米晶粒超声分散于去离子水中,配置成固含量为0.001~0.01g/L的悬浊液,边搅拌边将所述金纳米团簇分散液加入所述悬浊液中,通过纳米自组装将所述金纳米团簇结合到CdS上,形成CdS-Aux复合催化剂。
进一步,所述镉源溶液和所述硫源溶液均为0.01~5mol/L,将镉源溶液滴加到硫源溶液或者硫源溶液滴加到镉源溶液中,即制得混合均匀溶液。
进一步,步骤(1)中,所述镉源为硝酸镉、乙酸镉、氯化镉和硫酸镉中的一种或一种以上的组合物。
进一步,步骤(1)中,所述硫源为硫化钠、硫化和硫代硫酸钠中的一种或一种以上的组合物。
进一步,步骤(1)中,所述水热釜中所述加热温度为120-240℃,所述晶化时间为50-96h,所述干燥温度为50~70℃,所述干燥时间为8~15h。
进一步,步骤(2)中,所述巯基配合物为L-谷胱甘肽、对巯基苯甲酸和苯乙硫醇中的任一种。
进一步,步骤(2)中,所述金源溶液的浓度为0.01~0.05mol/L。
进一步,步骤(2)中,所述金纳米团簇分散液的质量分数为0.001~5wt%。
进一步,步骤(3)中,所述金纳米团簇的加入速度为20-50mL/h。
与现有技术相比,本发明的优点在于:
1、能够提高CdS的光催化活性,可有效抑制CdS的光腐蚀,即能够同时提高CdS的光催化活性和光稳定性。本发明所提供的CdS纳米粒子和金纳米团的复合材料属于异质结复合材料。CdS有良好的可见光吸收能力和优异的光电转化性能。将超小尺寸的金纳米团簇与之复合,可均匀的担载在CdS上形成异质结,并且不影响CdS的光吸收。二者可同时受可见光激发,光生电子和空穴反向迁移,可提高电荷分离效率,提高光催化活性,并且CdS的光生空穴迁移至光稳定的金纳米团簇,可有效抑制CdS的光腐蚀,从而同时提高CdS的光催化活性和光稳定性。
2、该制备方法为纯液相湿法合成法,合成工艺简单,反应条件温和,能耗低、易于规模化推广应用。
附图说明
图1为实施例1制备的CdS-Aux复合材料的XRD衍射图;
图2为实施例1制备的CdS-Aux复合材料的透射电镜照片;
图3为实施例2制备的CdS-Aux复合材料的透射电镜照片;
图4为实施例3制备的CdS-Aux复合材料的透射电镜照片;
图5为实施例1制备的CdS和CdS-Aux复合材料的光催化降解亚甲基蓝的活性测试对比图;
图6为实施例1制备的CdS和CdS-Aux复合材料的光电流测试对比图;
图7为实施例1制备的CdS-Aux复合材料的光稳定性测试图
具体实施方式
为了对本发明的技术特征、目的和有益效果有更加清楚的理解,现对本发明的技术方案进行以下详细说明,但不能理解为对本发明的可实施范围的限定。
实施例1
本实施例提供了一种CdS-Aux复合催化剂的制备方法,其是通过以下步骤制备的:
将2.6g二水乙酸镉溶于100ml去离子水(溶液A),等摩尔的Na2S·9H2O(2.4g)溶于100ml去离子水中(溶液B);用微量注射泵抽取A溶液,在搅拌条件下,注入到溶液B中,搅拌30min,静置过夜;
将上述过夜的溶液过滤,并用蒸馏水洗涤,然后将洗涤后固体产物转入到100ml水热釜中,加入蒸馏水至水热釜内釜体积的60%,在200℃下晶化72h,过滤,60℃干燥10h,制得CdS纳米晶粒;
将4ml HAuCl4(0.01g/ml)加入到50mL蒸馏水中,再加入0.05g的L-谷胱甘肽,搅拌至无色,70℃反应24h,离心,过滤;分别用乙腈和蒸馏水洗涤三次,置于5mL去离子水中超声分散,制得质量分数为0.08%的金纳米团簇的分散液;
称取0.2g CdS纳米晶粒置于50ml去离子水中超声分散形成均匀的悬浊液,边搅拌边将上述金纳米团簇分散液以20mL/h的速度全部加入到悬浊液中,在静电相互作用下,通过纳米自组装法将金纳米团簇结合到CdS上,制得金负载量10wt%的CdS-Aux复合催化剂。
取上述制备的CdS-Aux复合催化剂分别进行分析测试,如图1所示为CdS-Aux复合催化剂的XRD衍射图,以2θ角度为横坐标,以衍射强度为纵坐标。对照CdS的PDF卡片(JCPDSno.65-3414)可知,谱图中2θ为24.8°、26.5°、28.2°、36.6°、43.8°、47.8°和51.9°等处的衍射峰可归属为六方相CdS的特征峰,分别对应于六方相CdS的(100)、(002)、(101)、(102)、(110)、(103)和(112)晶面。谱图中并没有发现Au的衍射峰,这是由于金纳米团簇粒径较小,XRD无法检测到。
如图2所示为CdS-Aux复合催化剂透射电镜照片,从图中可以看出:所合成的CdS为平均尺寸50nm左右的纳米晶粒,在其上均匀负载了1.3nm左右的金纳米团簇,说明金纳米团簇已经负载到了CdS的表面。
光催化降解有机污染物实验:
取0.02g上述CdS-Aux复合催化剂,加入到100ml浓度为10mg/L亚甲基蓝溶液中,避光,持续搅拌30min,待吸附平衡后,利用氙灯光源模拟太阳光进行光催化降解有机污染物实验。使用紫外可见分光光度计测试亚甲基蓝吸收强度的变化来测定亚甲基蓝的光降解程度。如图5所示为CdS和CdS-Aux复合材料的光催化降解亚甲基蓝的活性测试对比图,横坐标为光照时间,纵坐标为纵坐标为归一化的亚甲基蓝浓度,从图中可以看出:复合金纳米团簇后,CdS光催化降解亚甲基蓝的活性得到了大幅提高。
如图6为CdS和CdS-Aux复合材料的光电流测试对比图;横坐标为时间,纵坐标为电流密度,从图中可以看出:在CdS上复合了金纳米团簇之后,光电流密度从7μA/cm2上升到了30μA/cm2,充分证明复合金纳米团簇可提高催化剂的光生电荷分离效率,从而提高光催化活性。
催化剂的光稳定性是通过回收光催化反应后的催化剂,然后对其活性进行循环测试,对比每次循环的光催化活性。如图7所示为CdS-Aux复合材料的光稳定性测试图,横坐标为光照时间,纵坐标为归一化的亚甲基蓝浓度,从图中可以看出:经过4次循环,催化剂的和活性得到了良好的保持(小幅的下降可能是因为回收过程中催化剂损失所造成的),说明复合金纳米团簇可以有效抑制CdS的光腐蚀。
实施例2
将6.96g四水合硝酸镉溶于100ml去离子水中(溶液A),0.68g(NH4)2S溶于100去离子水中(溶液B)。用微量注射泵抽取A溶液,在搅拌条件下,注入到溶液B中,搅拌30min,静置过夜;
将上述过夜的溶液过滤,并用蒸馏水洗涤,然后将洗涤后固体产物转入到100ml水热釜中,加入蒸馏水至水热釜内釜体积的60%,在120℃下晶化96h,过滤,70℃干燥8h,制得CdS纳米晶粒;
将5ml HAuCl4(0.03g/ml)加入到50mL蒸馏水中,再加入0.16g的对巯基苯甲酸,搅拌至无色,60℃反应30h,离心,过滤,用乙腈,蒸馏水洗涤三次,超声在分散到5ml水中,制的质量分数为0.3%的金纳米团簇的分散液;
称取0.05g CdS纳米晶粒超声分散到50ml去离子水中超声分散形成均匀的悬浊液,边搅拌边将上述金纳米团簇分散液以30mL/h的速度全部加入到悬浊液中,在静电相互作用下,通过纳米组装法将金纳米团簇结合到CdS上,制得CdS-Aux复合催化剂。
取上述CdS-Aux复合催化剂分别进行分析测试,如图3所示为CdS-Aux复合催化剂的透射电镜照片,从图中看出:在CdS纳米晶粒上均匀分散了尺寸均一的金纳米团簇。
实施例3
取质量比为1:2的氯化镉和硫酸镉12g溶于100ml去离子水中(溶液A),0.53g Na2S溶于100去离子水中(溶液B)。将A抽于注射器中,搅拌下用微量注射泵注入到溶液B中,搅拌50min,静置过夜;
将上述过夜的溶液过滤,蒸馏水洗涤,然后将固体转入到100ml水热釜中,加入蒸馏水至填充度60%,在240℃下晶化50h,过滤,50℃干燥,制得CdS纳米晶粒;
将5.5ml K(AuCl4)(0.01g/ml)加入到50mL蒸馏水中,再加0.075g苯乙硫醇,搅拌至无色,80℃反应20h,离心,过滤,用乙腈,蒸馏水洗涤三次,超声在分散到5ml水中,形成金纳米团簇的分散液;
称取0.5g CdS纳米晶粒超声分散到50ml水形成均匀的悬浊液,边搅拌,边将上述金纳米团簇分散液以50mL/h的速度缓慢加入到悬浊液中,在静电相互作用下,通过纳米组装法将金纳米团簇结合到CdS上,形成CdS-Aux复合催化剂。
上述实施方式仅为本发明的优选实施方式,不能以此来限定本发明保护的范围,本领域的技术人员在发明的基础上所做的任何非实质性的变化及替换均属于本发明所要求保护的范围。
Claims (10)
1.复合金纳米团簇抑制硫化镉光腐蚀的方法,其特征在于,在水热合成的CdS纳米颗粒表面复合金纳米团簇,制备出一种CdS复合金纳米团簇的CdS-Aux光催化剂。
2.一种制备上述所述CdS-Aux光催化剂的方法,其特征在于,包括如下步骤:
(1)以水热合成法制备CdS纳米晶粒:硫源溶液和镉源溶液混合均匀,所述镉源溶液和所述硫源溶液的摩尔比为1:1~1:3,搅拌,静置过夜,过滤,去离子水洗涤,然后将上述洗涤后物质转入水热釜中,加入蒸馏水,加热晶化,过滤,干燥,即制得CdS纳米晶粒;
(2)金纳米团簇分散液的制备:在金源溶液中加入巯基配合物,所述金源与所述巯基配合物的摩尔比为1:1~1:3,搅拌至无色,60~80℃反应20~30h,离心,过滤,洗涤,超声分散于去离子水中,即制的金纳米团簇分散液;
(3)CdS-Aux复合催化剂的制备:将步骤(1)中制得的CdS纳米晶粒超声分散于去离子水中,配置成固含量为0.001-0.01g/L的悬浊液,边搅拌边将所述金纳米团簇分散液加入所述悬浊液中,通过纳米自组装将所述金纳米团簇结合到CdS上,即制得CdS-Aux复合催化剂。
3.根据权利要求2所述一种CdS-Aux光催化剂的制备方法,其特征在于,步骤(1)中,所述镉源溶液和所述硫源溶液浓度均为0.01~5mol/L,将镉源溶液滴加到硫源溶液或者硫源溶液滴加到镉源溶液中,即制得混合均匀溶液。
4.根据权利要求1所述一种CdS-Aux光催化剂的制备方法,其特征在于,步骤(1)中,所述镉源为硝酸镉、乙酸镉、氯化镉和硫酸镉中的一种或一种以上的组合物。
5.根据权利要求1所述一种CdS-Aux光催化剂的制备方法,其特征在于,步骤(1)中,所述硫源为硫化钠、硫化氨和硫代硫酸钠中的一种或一种以上的组合物。
6.根据权利要求1所述一种CdS-Aux光催化剂的制备方法,其特征在于,步骤(1)中,所述水热釜中所述加热温度为120-240℃,所述晶化时间为50-96h,所述干燥温度为50~70℃,所述干燥时间为8~15h。
7.根据权利要求1所述一种CdS-Aux光催化剂的制备方法,其特征在于,步骤(2)中,所述巯基配合物为L-谷胱甘肽、对巯基苯甲酸、苯乙硫醇中的任一种。
8.根据权利要求1所述一种CdS-Aux光催化剂的制备方法,其特征在于,步骤(2)中,所述金源溶液的为0.01~0.05g/mL。
9.根据权利要求1所述一种CdS-Aux光催化剂的制备方法,其特征在于,步骤(2)中,所述金纳米团簇分散液的质量分数为0.001~5wt%。
10.根据权利要求1所述一种CdS-Aux光催化剂的制备方法,其特征在于,步骤(3)中,所述金纳米团簇的加入速度为20-50mL/h。
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