CN106711117B - 一种石墨烯键合银丝及其制备方法 - Google Patents

一种石墨烯键合银丝及其制备方法 Download PDF

Info

Publication number
CN106711117B
CN106711117B CN201710054902.7A CN201710054902A CN106711117B CN 106711117 B CN106711117 B CN 106711117B CN 201710054902 A CN201710054902 A CN 201710054902A CN 106711117 B CN106711117 B CN 106711117B
Authority
CN
China
Prior art keywords
silver
graphene
composite powder
graphene oxide
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710054902.7A
Other languages
English (en)
Other versions
CN106711117A (zh
Inventor
李天祥
孔杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Make Innovations Electronic Science And Technology Co Ltd In University Of Science And Technology Shandong
Original Assignee
Make Innovations Electronic Science And Technology Co Ltd In University Of Science And Technology Shandong
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Make Innovations Electronic Science And Technology Co Ltd In University Of Science And Technology Shandong filed Critical Make Innovations Electronic Science And Technology Co Ltd In University Of Science And Technology Shandong
Priority to CN201710054902.7A priority Critical patent/CN106711117B/zh
Publication of CN106711117A publication Critical patent/CN106711117A/zh
Application granted granted Critical
Publication of CN106711117B publication Critical patent/CN106711117B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/10Alloys containing non-metals
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C32/00Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0084Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ carbon or graphite as the main non-metallic constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/06Alloys based on silver
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/432Mechanical processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/432Mechanical processes
    • H01L2224/4321Pulling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/435Modification of a pre-existing material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/45198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45199Material of the matrix
    • H01L2224/452Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45238Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45239Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/45198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45298Fillers
    • H01L2224/45299Base material
    • H01L2224/45393Base material with a principal constituent of the material being a solid not provided for in groups H01L2224/453 - H01L2224/45391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)

Abstract

本发明提供了一种石墨烯键合银丝及其制备方法,种石墨烯键合银丝,由以下组分组成:石墨烯0.5%‑5%,Ag 95%‑99.5%,制备方法,包括以下步骤:S1、通过化学合成法制得银/氧化石墨烯复合粉;S2、将银/氧化石墨烯复合粉进行还原处理;S3、采用粉末冶金技术,将所述银/石墨烯复合粉进行成型、烧结处理,制得银/石墨烯复合材料;S4、真空熔炼;S5、竖式熔炼;S6、拉丝;S7、退火;S8、绕线,在银合金中添加石墨烯,显著增加了银合金的导电性,可以取代金线用于大功率的LED,环保、低成本、可控性好的生产工艺手段实现高性能石墨烯银合金丝的制备,不仅具有重要的科研价值,而且具有广泛的应用前景。

Description

一种石墨烯键合银丝及其制备方法
技术领域
本发明涉及封装用键合丝技术领域,尤其涉及一种石墨烯键合银丝及其制备方法。
背景技术
银合金作为键合丝材料具有高的反光率,低价值等优势,是LED中替代金线的理想材料。但是银合金线具有电阻率高,容易发热的缺点,因此一些大功率的LED没有办法取代金线。本发明一种石墨烯键合银丝,在银合金中添加石墨烯,显著增加了银合金的导电性,可以取代金线用于大功率的LED。
发明内容
本发明提供了一种石墨烯键合银丝及其制备方法,利用粉末冶金工艺制备石墨烯和银的合金,在高真空熔炼炉中熔化银,按比例添加石墨烯银合金,利用电磁搅拌,使石墨烯均匀分布于银溶液中,拉铸成棒,经过拉丝,退火,绕线制备出石墨烯键合银丝。
为解决上述技术问题,本发明提供了一种石墨烯键合银丝,由以下组分组成:石墨烯0.5%-5 %,Ag 95%-99.5 % 。
本发所述的一种石墨烯键合银丝的制备方法,包括以下步骤:
S1、通过化学合成法制得银/氧化石墨烯复合粉,具体为:将氧化石墨烯溶液与还原剂溶液混合,然后将该混合液与硝酸银溶液混合,获得银/氧化石墨烯复合粉的悬浊液,经沉降、洗涤、干燥获得纯净的银/氧化石墨烯复合粉;
S2、将银/氧化石墨烯复合粉进行还原处理;
S3、采用粉末冶金技术,将所述银/石墨烯复合粉进行成型、烧结处理,制得银/石墨烯复合材料;
S4、真空熔炼:将步骤3得到的银/石墨烯复合材料与的高纯银颗粒放入坩埚中,加热熔化,利用电磁搅拌,使石墨烯均匀的分布在石墨烯中,精炼一段时间后倒入石墨锭模中,冷却铸板,石墨烯在合金中的含量为0.5wt%-5wt %,加热温度为1200℃-1600℃,精炼时间为20min-30min。
S5、竖式熔炼:将步骤4得到的合金在惰性气体氩气的保护下进行熔炼,拉铸成棒材,熔炼温度为1200℃-1400℃;
S6、拉丝:拉铸后的棒材在拉丝机上逐步拉细,直至要求的直径,其拉丝过程中的模具延伸率为5%-8%,拉丝速度为0.5-15m/s;
S7、退火:退火温度为400-600℃,速度0.5-2m/s;
S8、绕线:将丝线分绕成不同长度的小轴。
作为本发明的一个优选的技术方案,所述的步骤S1的所述还原剂为抗坏血酸、葡萄糖、柠檬酸、草酸无毒环保型的一种或几种,还原剂溶液及硝酸银溶液的浓度均为0.1mol/L,氧化石墨烯溶液的质量浓度为0.5%-2%,氧化石墨烯的添加量占银/氧化石墨烯复合粉10wt%-30 wt %。
作为本发明的一个优选的技术方案,所述的S2的还原过程在氢气气氛下加热还原,加热温度300℃-700℃,加热时间3-12小时,得到银/石墨烯复合粉。
作为本发明的一个优选的技术方案,所述的粉末冶金技术包括冷等静压与烧结过程,等静压压力为0.6GPa-6GPa,烧结温度为500℃-900℃,烧结时间为3-12小时,烧结气氛为氮气。
本申请实施例中提供的一个或多个技术方案,至少具有如下技术效果或优点:
1、本发明在银合金中添加石墨烯,显著增加了银合金的导电性,可以取代金线用于大功率的LED。
2、本发明以一种环保、低成本、可控性好的生产工艺手段实现高性能石墨烯银合金丝的制备,不仅具有重要的科研价值,而且具有广泛的应用前景。
具体实施方式
为了更好的理解上述技术方案,下面将以具体的实施方式对上述技术方案进行详细的说明。
本实施例所述的原料配比:石墨烯0.5%,Ag99.5%
制备方法:
1、通过化学合成法制得银/氧化石墨烯复合粉,
基本步骤:
(1)配置0.1mol/L硝酸银溶液与0.1mol/L抗坏血酸溶液(或葡萄糖或柠檬酸或草酸的一种或几种);
(2)取2.5L抗坏血酸溶液与250g高质量浓度为0.5%的氧化石墨烯溶液混合,离子搅拌5-10分钟,取2L硝酸银溶液加入到上述混合液中,继续离子搅拌。硝酸银与抗坏血酸发生还原反应,生成银颗粒。氧化石墨烯被银粉吸附,得到银/氧化石墨烯悬浊液。将银/氧化石墨烯悬浊液离心洗涤5-10次,冷冻干燥,得到银/氧化石墨烯混合粉。
2、 将银/氧化石墨烯复合粉在氢气气氛下加热还原,550℃加热还原3小时,得到银/石墨烯复合粉。
3、利用冷等静压技术将银/石墨烯复合粉压制成型,得到相应坯锭,将该坯锭放置于烧结炉,氮气气氛下850℃烧结10小时,得到高致密度的银/石墨烯复合材料。
4、真空熔炼,制备石墨烯银合金。
(1)按重量百分比称取银/石墨烯复合材料与高纯银颗粒,银/石墨烯复合材料5%,高纯银颗粒95%,高纯银颗粒纯度为99.999%。
(2)投料,将银/石墨烯复合材料与高纯银颗粒放入坩埚中。
(3)真空熔炼,利用电磁搅拌,使石墨烯均匀的分布在合金中。
浇铸,将合金液倒入石墨锭模中,冷却铸板。
5、竖式熔炼:将步骤4得到合金放入竖式连续熔铸机坩埚中,设定加热温度1200℃-1400℃,在惰性气体氩气的保护下进行熔炼,拉铸成棒材。
6、拉丝:拉铸后的棒材在拉丝机上逐步拉细,直至要求的直径。其拉丝过程中的模具延伸率为5%-8%,拉丝速度为0.5-15m/s。
7、退火:根据性能要求设定合适的温度进行退火。
8、绕线:将丝线分绕成长度为500米和1000米两种规格的小轴。
石墨烯键合银丝测试数据(以20um为例)
拉断力(cN) 7.00 7.20 6.80 7.40 7.20 6.90 7.58 7.60
延伸率(%) 8.52 7.90 7.84 8.00 7.81 7.71 8.79 8.62
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制,虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例,但凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。

Claims (3)

1.一种石墨烯键合银丝的制备方法,其特征在于,包括以下步骤:
S1、通过化学合成法制得银/氧化石墨烯复合粉,具体为:将氧化石墨烯溶液与还原剂溶液混合,然后将该混合液与硝酸银溶液混合,获得银/氧化石墨烯复合粉的悬浊液,经沉降、洗涤、干燥获得纯净的银/氧化石墨烯复合粉, 所述还原剂为抗坏血酸、葡萄糖、柠檬酸、草酸无毒环保型的一种或几种,还原剂溶液及硝酸银溶液的浓度均为0.1mol/L,氧化石墨烯溶液的质量浓度为0.5%-2%,氧化石墨烯的添加量占银/氧化石墨烯复合粉10wt%-30wt %;
S2、将银/氧化石墨烯复合粉进行还原处理;
S3、采用粉末冶金技术,将所述银/石墨烯复合粉进行成型、烧结处理,制得银/石墨烯复合材料;
S4、真空熔炼:将步骤3得到的银/石墨烯复合材料与的高纯银颗粒放入坩埚中,加热熔化,利用电磁搅拌,使石墨烯均匀的分布在石墨烯中,精炼一段时间后倒入石墨锭模中,冷却铸板,石墨烯在合金中的含量为0.5wt%-5wt %,加热温度为1200℃-1600℃,精炼时间为20min-30min;
S5、竖式熔炼:将步骤4得到的合金在惰性气体氩气的保护下进行熔炼,拉铸成棒材,熔炼温度为1200℃-1400℃;
S6、拉丝:拉铸后的棒材在拉丝机上逐步拉细,直至要求的直径,其拉丝过程中的模具延伸率为5%-8%,拉丝速度为0.5-15m/s;
S7、退火:退火温度为400-600℃,速度0.5-2m/s;
S8、绕线:将丝线分绕成不同长度的小轴。
2.根据权利要求1 所述的一种石墨烯键合银丝的制备方法,其特征在于,所述的S2的还原过程在氢气气氛下加热还原,加热温度300℃-700℃,加热时间3-12小时,得到银/石墨烯复合粉。
3.根据权利要求1 所述的一种石墨烯键合银丝的制备方法,其特征在于,所述的粉末冶金技术包括冷等静压与烧结过程,等静压压力为0.6GPa-6GPa,烧结温度为500℃-900℃,烧结时间为3-12小时,烧结气氛为氮气。
CN201710054902.7A 2017-01-24 2017-01-24 一种石墨烯键合银丝及其制备方法 Active CN106711117B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710054902.7A CN106711117B (zh) 2017-01-24 2017-01-24 一种石墨烯键合银丝及其制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710054902.7A CN106711117B (zh) 2017-01-24 2017-01-24 一种石墨烯键合银丝及其制备方法

Publications (2)

Publication Number Publication Date
CN106711117A CN106711117A (zh) 2017-05-24
CN106711117B true CN106711117B (zh) 2019-06-21

Family

ID=58909608

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710054902.7A Active CN106711117B (zh) 2017-01-24 2017-01-24 一种石墨烯键合银丝及其制备方法

Country Status (1)

Country Link
CN (1) CN106711117B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107267795B (zh) * 2017-06-20 2019-12-10 华北水利水电大学 一种高导电性银基熔体材料及其熔炼方法
CN107369665B (zh) * 2017-09-22 2019-04-30 抚州市东乡区华昶铜业有限公司 一种石墨烯键合铜丝的制备方法
CN107768338B (zh) * 2017-09-26 2019-12-24 四川威纳尔特种电子材料有限公司 银-锡-石墨烯复合键合丝及其制备方法
CN107761054B (zh) * 2017-10-31 2019-03-01 湖南国盛石墨科技有限公司 一种负载有纳米银的微晶石墨烯复合材料及其制备方法和应用
CN108441668B (zh) * 2018-04-13 2021-02-26 上海和伍复合材料有限公司 一种银钨电接触材料及其制备方法
CN109946357A (zh) * 2019-02-25 2019-06-28 深圳清华大学研究院 石墨烯-银纳米复合结构、制备方法及应用
CN111235424A (zh) * 2020-01-16 2020-06-05 西安理工大学 一种抗材料转移性能优异的AgZrB2-Gr触头材料及其制备方法
CN113131307B (zh) * 2021-03-26 2023-01-24 上海联影医疗科技股份有限公司 滑环碳刷制备方法以及滑环碳刷
CN113637866B (zh) * 2021-08-09 2022-03-04 江西蓝微电子科技有限公司 一种石墨烯键合银丝及其制备方法
CN115821105B (zh) * 2023-02-14 2023-05-19 深圳中宝新材科技有限公司 一种表面含石墨烯的抗氧化键合合金银丝制备方法
CN116656998B (zh) * 2023-07-31 2023-10-10 烟台一诺电子材料有限公司 一种银键合丝及其加工方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103123830A (zh) * 2013-03-14 2013-05-29 南京科孚纳米技术有限公司 一种制备石墨烯电线电缆的方法
CN104700961A (zh) * 2015-03-18 2015-06-10 上海和伍新材料科技有限公司 一种石墨烯/银复合材料及其制备方法
CN105562707A (zh) * 2015-12-23 2016-05-11 陈添乾 银-石墨烯复合材料的制备方法及其用于制备银-石墨烯合金线的应用方法
CN106111973A (zh) * 2016-06-22 2016-11-16 中国科学院宁波材料技术与工程研究所 一种石墨烯/纳米银复合粉体及其制备方法和应用

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103123830A (zh) * 2013-03-14 2013-05-29 南京科孚纳米技术有限公司 一种制备石墨烯电线电缆的方法
CN104700961A (zh) * 2015-03-18 2015-06-10 上海和伍新材料科技有限公司 一种石墨烯/银复合材料及其制备方法
CN105562707A (zh) * 2015-12-23 2016-05-11 陈添乾 银-石墨烯复合材料的制备方法及其用于制备银-石墨烯合金线的应用方法
CN106111973A (zh) * 2016-06-22 2016-11-16 中国科学院宁波材料技术与工程研究所 一种石墨烯/纳米银复合粉体及其制备方法和应用

Also Published As

Publication number Publication date
CN106711117A (zh) 2017-05-24

Similar Documents

Publication Publication Date Title
CN106711117B (zh) 一种石墨烯键合银丝及其制备方法
CN101775520B (zh) 一种利用磁场处理制备高性能Cu-Fe形变原位复合材料的方法
CN106676334B (zh) 高强度高电导率铝钪合金及其制备方法和用途
CN104831122A (zh) 一种低成本高性能钛合金及其制备方法
CN101956094A (zh) 一种高强高导弥散强化铜合金及其制备方法
CN110396619A (zh) 一种铜铁合金线材及其制备方法
WO2011003225A1 (zh) 一种银-金属氧化物电触头材料的制备方法
CN102787260A (zh) 用于铝合金晶粒细化的超细晶孕育剂的制备方法
CN101956112B (zh) 一种Mo-Ce合金丝及其制备方法
CN109722560B (zh) 一种ZrC增强Cu-Fe基复合材料及其制备方法
CN110872659B (zh) 一种高性能铜合金
CN105839038A (zh) 一种高强度高导电率Cu-Ag-Fe合金的制备方法
CN101135011A (zh) AgSnO2电接触材料制备新方法
CN101745753A (zh) 一种无银铜基钎焊料及其生产工艺
CN106903294A (zh) 一种低成本非晶合金件的制备方法及低成本非晶合金件
CN105154729A (zh) 铸造铝-锌-镁-铜-钽合金及其制备方法
CN105925923B (zh) 用作时速400公里以上高速铁路接触线材料的高强高导铜合金的制备方法
CN107794405B (zh) 一种细晶粒铜锡合金及其制备方法
CN106676314B (zh) 一种高强度高导电性能Cu-Ag合金的制备方法
CN106086505B (zh) 一种作为时速400公里以上高速铁路接触线材料应用的超强高导铜合金的制备方法
CN109957677A (zh) 一种Cu-Cr-Ag合金线材及其制备加工方法
CN102703740A (zh) 一种Cu-Cr-Zr合金的制备方法
CN100365154C (zh) Cu-Ag-RE合金原位纳米纤维复合材料
CN114592138B (zh) 一种纳米氧化铝颗粒增强铜基复合材料及其制备方法
CN115846672A (zh) 一种用于引线框架的高强高导铜基复合材料的制备方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant