CN106664028A - 用于交流发电机的有源整流器 - Google Patents

用于交流发电机的有源整流器 Download PDF

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CN106664028A
CN106664028A CN201480080656.7A CN201480080656A CN106664028A CN 106664028 A CN106664028 A CN 106664028A CN 201480080656 A CN201480080656 A CN 201480080656A CN 106664028 A CN106664028 A CN 106664028A
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generator
rectifier
active rectifier
phase
module
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斯托扬·马尔基奇
戈拉兹德·莫德里扬
罗伯特·雷希科
托马日·楚尔科
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Development Of Siyiwa Automobile Sales Co
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Abstract

旋转电机的有源整流器，尤其用于交流发电机的有源整流器，旨在用于将交流电(AC)整流为用于充电车辆上的电池的直流电(DC)。有源整流器包括：功率MOSFET晶体管，其具有检测和驱动电路系统，所有安装在单个基板上以形成半桥构造模块。数量为N的模块连接在一起用作N相位整流器。每个模块如此连接以便整流来自电机的一个相位的电流，并且具有其自身电源用于包括的检测和驱动电路系统。电源从正被整流的相位采集功率并且独立于交流发电机的调压器而操作。半桥模块具有铝壳体，铝壳体具有冷却肋，冷却肋暴露至流经交流发电机的空气气流。有源整流器提供了整流中降低的压降，因此增加了交流发电机的总体效率。

Description

用于交流发电机的有源整流器
技术领域
本专利申请的客体涉及一种有源整流器的结构(主要旨在用于整流旋转电机、尤其交流发电机的交流电)，在该结构中，实施功率MOSFET晶体管以代替一般使用的功率二极管。MOSFET晶体管在整个整流器中提供了降低的压降并且增加了总体交流发电机效率。
本发明涉及的类别：H05K7/20；H01L23/34；H01L25/07；H02J7/00；H02K11/04；H02M7/12。
背景技术
使用在DC发电机功能中的交流电(AC)旋转电机典型地集成二极管以将交流电整流为所需的DC电流。交流发电机(其旨在用于充电车辆起动系统上的电池或者静止装备，诸如发电机组或者类似物)尤其具有连接在整流电路系统中的功率二极管。半导体功率二极管利用每个二极管0.6V至1V的范围内不可避免的压降沿正向导电方向做功。该压降代表显著功率损失，同时将生成的电流传导至电池或者其他电力负荷。结果，交流发电机具有相当低的操作效率，特定地相当低的操作功率旨在用于14V或者28V的低系统电压。
我们要解决的技术问题是找到这样一种整流器结构，使得整流器结构将具有降低的压降并且因此具有整流中降低的能力损失操作，因此具有更好的总体效率。此外，对于整流器的结构理想的是，其以这种方式构造使得其将替换交流发电机上处于相同位置的正常二极管整流器而无需更改简单的空气冷却以及现存的装置，以不增加机器的生产成本。
使用具有充分低阻力的MOSFET晶体管、优选TOLL类型(无引线封装)，将0.6V–1V的不想要的压降降低至0–0.2V的范围，因此还成比例地降低交流发电机的功率损失并且使其更有效。将晶体管安装在与二极管相同的位置并且不更改用于冷却的强迫空气通风，这能够改造的交流发电机操作而其关键零件(电刷、转子环以及轴承)处于较低作业温度，降低它们的磨损，因此增加了交流发电机的寿命。
该发明的有源整流器的结构是这样的，使得其包括连接的模块，其中，它们中的每个具有半桥构造并且替换通常连接至发电机的相同相位的两个二极管。典型地，需要三个相同的模块来形成三相交流发电机整流器。具有更大或更小数量相位的发电机需要适当地更大或者较小数量的相等模块。
每个MOSFET晶体管具有其自身过零检测和驱动电路系统，该系统由小信号电子设备制成，组装在MOSFET的附近并且安装在与模块的铝壳体具有良好热接触的单个基板上，该壳体还是放置在交流发电机的强迫空气冷却的空气气流中的散热片。每个模块内在地连接至这样的相位，该相位被整流并且使用相位的功率用于供给检测和驱动电路系统。这使得模块独立于车辆系统电压和交流发电机的的调压器。模块不需要任何额外连接。继续描述的整流器在交流发电机(或者其他发电机)的制造过程中仅引起不显著的修改，因此有效地维持它们的低生产成本。
存在少量有源整流器的公知解决方案。专利公开US7292445B2中提议了一个例子，该专利公开描述了一种调压器，其与有源整流器集成，用于更有效地充电电池。集成的多层设备利用水冷却安装在单独铝底板上，整个组件作为延伸安装在存在的交流发电机的侧面，这增加了其的总体直径。
专利公开US2006151874中提议了另一例子。提议的解决方案包括一种功率电路，其被控制部件控制。功率电路的所有功率传导部件是功率MOS部件并且集成为堆叠构造，堆叠构造集成两个平行基板。功率MOS部件放置在两个平行基板之间并且在两侧具有触头。
发明内容
本发明解决了与需要使用功率二极管的传统整流器结构关联的技术问题，传统整流器结构使用功率二极管，同时引入功率MOSFET晶体管作为替换。对应控制电路系统提供了控制信号，该控制信号与发电机的交流输出电压同步地接通以及关闭晶体管。检测出沿正向导电方向通常关联于二极管的不想要的压降，并且通过接通MOSFET晶体管显著降低该压降。因为降低了整个半导体中的压降，还降低了整个整流器中的功率损失，因此改善了总体发电机效率。该改善还导致交流发电机的关键磨损零件的较低操作温度。
有源整流器的结构是这样的，使得其包括N个连接的模块，其中，它们中的每个具有半桥构造并且替换通常连接至发电机的相同相位的两个二极管。典型地，需要三个相同的模块来形成三相交流发电机整流器。交流发电机的模块的电连接相同于常规二极管整流器的连接。
描述的有源半桥模块的一个不可忽略的优势是冷却模块，因此还能够冷却整个整流器，冷却整个整流器能够仅通过强制空气冷却进行。该专利包括由金属制成的冷却器元件的描述，但是优选地不排除由铸造铝制成的冷却器元件，其具有定向成沿平行于交流发电机轴的方向的冷却肋，冷却肋位于交流发电机的通风器的空气流动气流中。
有源整流器具有用于控制电路系统的其自身电源，因此其独立于交流发电机调压器操作。
当使用在交流发电机上时，整流器在其输出终端之间具有至少两个功率稳压二极管(串联连接，这使得它们能够抵抗错误的极性连接)，以在负荷突降条件期间钳制(限制)电压。稳压二极管应当具有优选范围为16V至32V的稳压电压以钳制范围为32V至64V的交流发电机的电压。由于有源整流器的模块暴露于恶劣环境，因此除了连接终端之外，它们应该在整个电子部件上涂覆有灌封材料。
附图说明
图1示出了半桥有源整流器模块的截面图，示出了单个基板，包括功率MOSFET晶体管，具有放置在相同基板上的过零检测和驱动电路系统，整体安装在冷却元件上。
图2示出了整流器模块的一个半桥构造的电气方框图。
图3示出了包括连接的两个保护稳压二极管的三相整流器构造的方框图。
图4示出了多相整流器的连接图，多相整流器由多个相同半桥模块以及保护稳压二极管组成。
具体实施方式
本发明的有源整流器的结构由N个连接的模块组成，其中，它们中的每个具有半桥构造并且替换连接至发电机的相同相位的无源整流器的两个二极管。典型地，需要三个相同模块来形成三相交流发电机整流器。交流发电机30上的电连接相同于常规二极管整流器的连接。相位终端22是整流器的输入，共同(B+)和(B-)终端是整流器的输出。
如图1所示，所有电部件(包括功率MOSFET晶体管10、对应检测和驱动电路系统20中的小信号电子部件、以及用于供给所述驱动电路系统的15V电压供给15)放置在同一个单个基板50上。基板50必须具有与通过应用在它们两个之间的粘着剂提供的模块壳体31良好的机械以及热接触。模块的壳体31应当具有多个冷却肋32，以便当暴露至流经交流发电机30的空气气流时提供有效的冷却。
每个半桥模块5的基板50支撑三个高电流终端B+和B-，它们用作有源整流器电子设备的相位终端和交流发电机30)的相位终端之间的连接终端。为了对汽车环境条件提供足够保护，组装在模块壳体31上的基板50上的所有电子部件涂覆有灌封材料40。
图2示出了有源整流器模块的半桥构造的电气方框图。提议的有源整流器中的主要导电元件是功率MOSFET晶体管10。有源整流器操作的目的是用由交流发电机30生成的相位电压同步地接通晶体管10以及有效地传导相位电流，传导半周期期间具有最小压降。为了实现此，MOSFET晶体管10必须由适当的栅电压驱动，使得将MOSFET的漏源极电压维持为低于0.2V。二极管17感测晶体管10的漏极电压。在导电整流周期期间，感测的电压从二极管17被输送至检测和驱动电路系统20，检测和驱动电路系统20输出用于MOSFET晶体管的栅的电压。这样生产的驱动电压必须位于晶体管的栅阈值电压和15V供给电压之间，并且应该被调整以便将整个MOSFET晶体管中的期望压降维持在低于0.2V。
15V供给15获取来自相位终端22的AC电压，整流该电压并且将其稳定至期望的15VDC以适当地供给检测器和驱动器电路系统20。每个半桥构造模块5具有一个15V供给电路系统15，该供给15为高侧和低侧MOSFET晶体管10提供供给。如此设计的模块没有用于检测器和驱动器电路系统20的功能所需的用于15V供给的外向终端或者针。
图3图示了用于典型三相整流器构造的三个相同半桥模块5的连接，其中，所有B+以及B-终端连接在一起以提供发电机的DC输出，其中，每个模块终端22连接至交流发电机30的一个相位。在自动条件下工作的交流发电机有时暴露至所谓的负荷突降条件，在负荷突降条件中，生成高电压尖峰，这将破坏有源整流器中的电子部件。为了防止此，串联连接的两个功率稳压二极管25连接在整流器的B+和B-终端之间。对于低电压系统(14V或者28V)，优选使用额定电压范围为16V至32V的稳压二极管25。为了可靠的操作，两个稳压二极管25电压的总和必须低于使用在有源整流器中的MOSFET晶体管10的额定击穿电压。
图4图示了由多个相同半桥模块5组成的多相位整流器的连接图。一对保护稳压二极管25需要包括在N相位有源整流器中。
权利要求书(按照条约第19条的修改)
1.一种用于发电机的有源整流器的结构，优选旨在充电车辆的电池的交流发电机，其包括：
功率MOSFET开关，优选无引线类型MOSFET晶体管(10)；检测和驱动电路系统(20)位于所述功率MOSFET开关的附近，所有都安装在单个基板(50)上呈这种电连接以形成用于电源的单相同步整流的半桥模块(5)，其中，所述单个基板(50)安装在优选铝铸造散热片元件(31)中以形成单相整流器模块(5)；至少两个以及高达N个数量的相同整流器模块，它们形成两个以及高达N个相位整流器；其特征在于，所述检测和驱动电路系统(20)具有其自身电压供给(15)，电压供给(15)连接至相位终端(22)并且从发电机的相位获取供给电压。
2.根据权利要求1所述的有源整流器的结构，其特征在于，串联连接的一对功率稳压二极管(25)，所述一对稳压二极管与整流器输出终端B+和B-并联连接，其中，用于每个二极管的稳压二极管电压处于16V至32V的电压范围。
3.根据权利要求1所述的有源整流器的结构，其特征在于，使所有它们的电子部件涂覆有灌封材料的所述半桥模块(5)散布在整个所述单个基板(50)上并且放置在所述散热片元件(31)中。
4.根据权利要求1所述的有源整流器的结构，其特征在于，所述散热片元件(31)具有的空气冷却肋(32)定向成平行于所述发电机的转子轴。

Claims (4)

1.一种用于发电机的有源整流器的结构，优选旨在充电车辆的电池的交流发电机，其包括：
功率MOSFET晶体管，优选无引线类型，驱动部件靠近其安装在单个基板(50)上呈这种电连接以形成用于正被整流的电源的单相的半桥构造，单个基板安装在单独的优选铝铸造散热片元件中以形成单相整流器模块；所述散热片元件具有的冷却肋定向在所述发电机的转子轴的平行方向以及放置在所述发电机的冷却空气流动气流中；至少两个以及高达N个数量的相同整流器模块，它们连接以形成用于所述发电机的至少两个以及高达N个相位整流器；所述检测和驱动部件具有其自身电压供给电路系统(15)，其如此连接从正被整流的电源的相同相位获取电压，因此独立于系统电压以及独立于所述发电机上的调压器而操作。
2.根据权利要求1所述的有源整流器的结构，包括串联连接的一对功率稳压二极管(25)，所述一对稳压二极管与整流器输出终端并联连接，用于每个二极管的稳压二极管电压处于16V至32V的电压范围。
3.根据权利要求1所述的有源整流器的结构，包括使所有它们的电子部件涂覆有灌封材料的所述半桥模块(5)散布在整个所述单个基板(50)上并且放置在所述散热片元件(31)中。
4.根据权利要求1所述的有源整流器的结构，包括所述半桥模块的铝壳体装备有冷却肋(32)，冷却肋(32)定向成平行于所述发电机的轴并且布置在流经所述发电机的冷却空气气流中。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109742962A (zh) * 2019-02-21 2019-05-10 芜湖杰诺瑞汽车电器系统有限公司 一种整流装置及具有该整流装置的车用发电机

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016103714B4 (de) * 2016-03-02 2021-09-30 Infineon Technologies Ag Leistungshalbleiterpackages und Multiphasengleichrichter mit einem Leistungshalbleiterpackage
WO2018050847A1 (de) * 2016-09-18 2018-03-22 Seva Academy Ltd. Gleichrichter-vorrichtung zum gleichrichten eines m-phasigen wechselsignals und gesamtvorrichtung mit einem solchen gleichrichter
EP3497783A4 (en) * 2016-10-13 2020-01-08 Halliburton Energy Services, Inc. DYNAMIC GENERATOR VOLTAGE CONTROL FOR HIGH POWER DRILLING AND LOGGING DURING DRILLING
DE102018222829A1 (de) * 2018-12-21 2020-06-25 Robert Bosch Gmbh Schaltungsanordnung und Gleichrichterschaltung für eine elektrische Maschine
CN109802473B (zh) * 2018-12-29 2021-04-23 中国科学院光电研究院 一种适用于人体发电的三相全桥同步整流电路
JP7240349B2 (ja) * 2020-03-19 2023-03-15 株式会社東芝 半導体回路及びブリッジ回路
DE102021108698A1 (de) 2021-04-08 2022-10-13 Bayerische Motoren Werke Aktiengesellschaft Verfahren zum Betreiben eines Wandlermoduls, Wandlervorrichtung mit einem Wandlermodul und Kraftfahrzeug mit einer Wandlervorrichtung

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6563726B1 (en) * 2001-11-21 2003-05-13 Hewlett-Packard Company Synchronous bridge rectifier
JP2005045878A (ja) * 2003-07-24 2005-02-17 Toyota Motor Corp スイッチング装置、それを用いた発電電動装置、発電電動装置を備える駆動システムおよび発電電動装置の制御をコンピュータに実行させるためのプログラムを記録したコンピュータ読取り可能な記録媒体
US20070195563A1 (en) * 2006-02-23 2007-08-23 Masaki Shiraishi Dc/dc converter
US7292445B2 (en) * 2003-02-25 2007-11-06 Siliconix Technology C.V.-Ir Active integrated rectifier regulator
CN101542902A (zh) * 2006-11-16 2009-09-23 法雷奥电机设备公司 同步整流器电桥的部件、相关同步整流器电桥及其应用
US20110215840A1 (en) * 2010-03-08 2011-09-08 Sanken Electric Co., Ltd. Gate drive circuit
CN202383221U (zh) * 2011-12-28 2012-08-15 卧龙电气集团股份有限公司 一种用于高压变频器驱动电路测试的igbt管模拟装置
WO2014030458A1 (ja) * 2012-08-20 2014-02-27 日立オートモティブシステムズ株式会社 パワー半導体モジュール
CN103746577A (zh) * 2013-05-10 2014-04-23 东风汽车电气有限公司 低整流损耗型光耦式汽车发电机同步整流器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1316999A1 (de) 2001-11-28 2003-06-04 Continental ISAD Electronic Systems GmbH & Co. oHG Verfahren und Vorichtung zum Kontaktieren von Leistungselektronik-Bauelementen
DE10231091A1 (de) 2002-07-10 2004-01-22 Robert Bosch Gmbh Aktivgleichrichter-Modul für Drehstromgeneratoren von Fahrzeugen
EP1557932A1 (en) * 2002-10-28 2005-07-27 Toyota Jidosha Kabushiki Kaisha Generator-motor
JP4580997B2 (ja) * 2008-03-11 2010-11-17 日立オートモティブシステムズ株式会社 電力変換装置
US8174214B2 (en) * 2009-09-28 2012-05-08 Harris Corporation Three-phase low-loss rectifier with active gate drive
US8964436B2 (en) * 2012-10-16 2015-02-24 Hong Kong Applied Science & Technology Research Institute Company, Limited Self-starting transistor-only full-wave rectifier for on-chip AC-DC conversion
DE102013208968A1 (de) * 2013-05-15 2014-11-20 Robert Bosch Gmbh Kraftfahrzeugbordnetz mit aktivem Brückengleichrichter und Überspannungsschutz bei Lastabwurf, Gleichrichteranordnung, zugehöriges Betriebsverfahren und Mittel zu dessen Implementierung

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6563726B1 (en) * 2001-11-21 2003-05-13 Hewlett-Packard Company Synchronous bridge rectifier
US7292445B2 (en) * 2003-02-25 2007-11-06 Siliconix Technology C.V.-Ir Active integrated rectifier regulator
JP2005045878A (ja) * 2003-07-24 2005-02-17 Toyota Motor Corp スイッチング装置、それを用いた発電電動装置、発電電動装置を備える駆動システムおよび発電電動装置の制御をコンピュータに実行させるためのプログラムを記録したコンピュータ読取り可能な記録媒体
US20070195563A1 (en) * 2006-02-23 2007-08-23 Masaki Shiraishi Dc/dc converter
CN101542902A (zh) * 2006-11-16 2009-09-23 法雷奥电机设备公司 同步整流器电桥的部件、相关同步整流器电桥及其应用
US20110215840A1 (en) * 2010-03-08 2011-09-08 Sanken Electric Co., Ltd. Gate drive circuit
CN202383221U (zh) * 2011-12-28 2012-08-15 卧龙电气集团股份有限公司 一种用于高压变频器驱动电路测试的igbt管模拟装置
WO2014030458A1 (ja) * 2012-08-20 2014-02-27 日立オートモティブシステムズ株式会社 パワー半導体モジュール
CN103746577A (zh) * 2013-05-10 2014-04-23 东风汽车电气有限公司 低整流损耗型光耦式汽车发电机同步整流器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
周志敏 等: "《IGBT驱动与保护电路设计及应用电路实例》", 31 January 2014, 机械工业出版社 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109742962A (zh) * 2019-02-21 2019-05-10 芜湖杰诺瑞汽车电器系统有限公司 一种整流装置及具有该整流装置的车用发电机

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