CN106663655B - 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统 - Google Patents

通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统 Download PDF

Info

Publication number
CN106663655B
CN106663655B CN201580036440.5A CN201580036440A CN106663655B CN 106663655 B CN106663655 B CN 106663655B CN 201580036440 A CN201580036440 A CN 201580036440A CN 106663655 B CN106663655 B CN 106663655B
Authority
CN
China
Prior art keywords
packet
light
film
fiber
pulse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580036440.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN106663655A (zh
Inventor
尤里·叶罗欣
伊格尔·山马尔特瑟夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IPG Photonics Corp
Original Assignee
IPG Photonics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IPG Photonics Corp filed Critical IPG Photonics Corp
Priority to CN201910297108.4A priority Critical patent/CN109979805B/zh
Publication of CN106663655A publication Critical patent/CN106663655A/zh
Application granted granted Critical
Publication of CN106663655B publication Critical patent/CN106663655B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816Pulsed laser beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/063Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067Fibre lasers
    • H01S3/06708Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
    • H01S3/06745Tapering of the fibre, core or active region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/063Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067Fibre lasers
    • H01S3/06754Fibre amplifiers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/091Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094003Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3402Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411Silicon, silicon germanium or germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/1601Solid materials characterised by an active (lasing) ion
    • H01S3/1603Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1618Solid materials characterised by an active (lasing) ion rare earth ytterbium

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Compositions (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN201580036440.5A 2014-07-03 2015-07-01 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统 Active CN106663655B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910297108.4A CN109979805B (zh) 2014-07-03 2015-07-01 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462020501P 2014-07-03 2014-07-03
US62/020,501 2014-07-03
PCT/US2015/038785 WO2016004175A1 (en) 2014-07-03 2015-07-01 Process and system for uniformly recrystallizing amorphous silicon substrate by fiber laser

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201910297108.4A Division CN109979805B (zh) 2014-07-03 2015-07-01 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统

Publications (2)

Publication Number Publication Date
CN106663655A CN106663655A (zh) 2017-05-10
CN106663655B true CN106663655B (zh) 2019-05-07

Family

ID=55019961

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201580036440.5A Active CN106663655B (zh) 2014-07-03 2015-07-01 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统
CN201910297108.4A Active CN109979805B (zh) 2014-07-03 2015-07-01 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201910297108.4A Active CN109979805B (zh) 2014-07-03 2015-07-01 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统

Country Status (6)

Country Link
US (2) US9941120B2 (https=)
EP (1) EP3164885B1 (https=)
JP (2) JP2017528922A (https=)
KR (1) KR102439093B1 (https=)
CN (2) CN106663655B (https=)
WO (2) WO2016004174A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106663655B (zh) * 2014-07-03 2019-05-07 Ipg光子公司 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统
JP2019521321A (ja) * 2016-05-11 2019-07-25 アイピージー フォトニクス コーポレーション フラットパネルディスプレイのための、ファイバーレーザーアニーリングされた多結晶シリコンフィルムの形態学的特徴を測定するためのプロセス及びシステム
US10234765B2 (en) * 2017-06-05 2019-03-19 Coherent Lasersystems Gmbh & Co. Kg Energy controller for excimer-laser silicon crystallization
US11673208B2 (en) 2017-07-31 2023-06-13 Ipg Photonics Corporation Fiber laser apparatus and method for processing workpiece
EP3646419A4 (en) * 2017-07-31 2021-06-02 IPG Photonics Corporation FIBER LASER DEVICE AND METHOD FOR MACHINING A WORKPIECE
US11600491B2 (en) * 2017-07-31 2023-03-07 Ipg Photonics Corporation Laser apparatus and method of processing thin films
JP7335236B2 (ja) * 2017-10-13 2023-08-29 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク スポットビーム及びラインビーム結晶化のためのシステムおよび方法
CN108550580B (zh) * 2018-04-27 2019-10-11 武汉华星光电技术有限公司 Tft阵列基板
CN108615680B (zh) * 2018-04-28 2020-03-10 京东方科技集团股份有限公司 多晶硅层及其制造方法、薄膜晶体管及阵列基板的制造方法
US10802120B1 (en) 2019-08-20 2020-10-13 Luminar Technologies, Inc. Coherent pulsed lidar system
US12228650B2 (en) 2020-08-10 2025-02-18 Luminar Technologies, Inc. Master-oscillator power-amplifier (MOPA) light source with optical isolator
US12481034B2 (en) 2020-08-10 2025-11-25 Luminar Technologies, Inc. Lidar system with input optical element

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1969377A (zh) * 2004-06-18 2007-05-23 株式会社半导体能源研究所 激光照射设备和激光照射方法
CN101044597A (zh) * 2004-10-20 2007-09-26 株式会社半导体能源研究所 激光照射方法、激光照射装置和制造半导体器件的方法
CN101162690A (zh) * 2006-10-13 2008-04-16 三星Sdi株式会社 多晶硅薄膜晶体管及其制造方法
US8630320B2 (en) * 2007-08-31 2014-01-14 Deep Photonics Corporation Method and apparatus for a hybrid mode-locked fiber laser

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645272A (ja) * 1992-07-21 1994-02-18 Hitachi Ltd レーザアニール装置
US20040134894A1 (en) * 1999-12-28 2004-07-15 Bo Gu Laser-based system for memory link processing with picosecond lasers
JP2002280324A (ja) * 2001-03-16 2002-09-27 Sony Corp レーザ装置
TW200304175A (en) * 2001-11-12 2003-09-16 Sony Corp Laser annealing device and thin-film transistor manufacturing method
GB2395353B (en) * 2002-02-18 2004-10-13 Univ Southampton Pulsed light sources
JP2004063924A (ja) * 2002-07-31 2004-02-26 Mitsubishi Heavy Ind Ltd レーザアニール方法及び装置
US6925216B2 (en) * 2003-05-30 2005-08-02 The Regents Of The University Of California Direct-patterned optical waveguides on amorphous silicon films
JP2006086447A (ja) * 2004-09-17 2006-03-30 Sharp Corp 半導体薄膜の製造方法および半導体薄膜の製造装置
US7508853B2 (en) * 2004-12-07 2009-03-24 Imra, America, Inc. Yb: and Nd: mode-locked oscillators and fiber systems incorporated in solid-state short pulse laser systems
US7700463B2 (en) * 2005-09-02 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7715459B2 (en) * 2005-11-01 2010-05-11 Cymer, Inc. Laser system
EP1974422A4 (en) * 2005-12-15 2011-12-07 Laser Abrasive Technologies Llc METHOD AND DEVICE FOR TREATING SOLID MATERIALS USING HARD FIBER
JP5227552B2 (ja) 2006-08-31 2013-07-03 株式会社半導体エネルギー研究所 薄膜トランジスタ及びその作製方法、並びに半導体装置
US8009705B2 (en) * 2007-07-05 2011-08-30 Mobius Photonics, Inc. Fiber MOPA system without stimulated brillouin scattering
US20090246530A1 (en) * 2008-03-27 2009-10-01 Imra America, Inc. Method For Fabricating Thin Films
US20090246413A1 (en) * 2008-03-27 2009-10-01 Imra America, Inc. Method for fabricating thin films
CN102057467B (zh) * 2008-06-12 2013-02-13 株式会社Ihi 激光退火方法以及激光退火装置
WO2010057290A1 (en) * 2008-11-21 2010-05-27 Institut National Optique Spectrally tailored pulsed fiber laser oscillator
US8372667B2 (en) * 2009-04-20 2013-02-12 Applied Materials, Inc. Fiber laser substrate processing
US8068705B2 (en) * 2009-09-14 2011-11-29 Gapontsev Valentin P Single-mode high-power fiber laser system
US20110133129A1 (en) * 2009-12-07 2011-06-09 Imra America, Inc. Method of tuning properties of thin films
JP5678333B2 (ja) * 2010-05-27 2015-03-04 株式会社ブイ・テクノロジー レーザアニール方法及び装置
US9316545B2 (en) 2011-07-11 2016-04-19 California Institute Of Technology Scanning measurement of Seebeck coefficient of a heated sample
US8774236B2 (en) * 2011-08-17 2014-07-08 Veralas, Inc. Ultraviolet fiber laser system
US8817827B2 (en) 2011-08-17 2014-08-26 Veralas, Inc. Ultraviolet fiber laser system
GB2505409B (en) * 2012-08-27 2016-08-03 V-Gen Ltd Generation of narrow line width high power optical pulses
US9413137B2 (en) * 2013-03-15 2016-08-09 Nlight, Inc. Pulsed line beam device processing systems using laser diodes
US10069271B2 (en) * 2014-06-02 2018-09-04 Nlight, Inc. Scalable high power fiber laser
CN106663655B (zh) * 2014-07-03 2019-05-07 Ipg光子公司 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统
US9246303B1 (en) * 2014-10-31 2016-01-26 Raytheon Company Method and apparatus for temporally concentrating pump power to support generation of high peak-power pulse bursts or other time-varying laser output waveforms

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1969377A (zh) * 2004-06-18 2007-05-23 株式会社半导体能源研究所 激光照射设备和激光照射方法
CN101044597A (zh) * 2004-10-20 2007-09-26 株式会社半导体能源研究所 激光照射方法、激光照射装置和制造半导体器件的方法
CN101162690A (zh) * 2006-10-13 2008-04-16 三星Sdi株式会社 多晶硅薄膜晶体管及其制造方法
US8630320B2 (en) * 2007-08-31 2014-01-14 Deep Photonics Corporation Method and apparatus for a hybrid mode-locked fiber laser

Also Published As

Publication number Publication date
EP3164885B1 (en) 2021-08-25
KR20170029537A (ko) 2017-03-15
US9941120B2 (en) 2018-04-10
WO2016004175A1 (en) 2016-01-07
USRE48398E1 (en) 2021-01-19
KR102439093B1 (ko) 2022-08-31
WO2016004174A1 (en) 2016-01-07
US20160013057A1 (en) 2016-01-14
CN109979805B (zh) 2023-02-21
JP2017528922A (ja) 2017-09-28
JP2020205439A (ja) 2020-12-24
CN109979805A (zh) 2019-07-05
EP3164885A1 (en) 2017-05-10
CN106663655A (zh) 2017-05-10
JP7111783B2 (ja) 2022-08-02
EP3164885A4 (en) 2018-03-07

Similar Documents

Publication Publication Date Title
CN106663655B (zh) 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统
US10957541B2 (en) Short pulse fiber laser for LTPS crystallization
TW546877B (en) Laser apparatus
CN102232239A (zh) 用于薄膜结晶的系统和方法
KR20140113494A (ko) 펄스형 라인 빔들
KR101446821B1 (ko) 레이저 빔 공간 강도 프로파일의 최적화를 위한 시스템 및 방법
JP5073260B2 (ja) レーザアニール装置及びレーザアニール方法
JP2011165717A (ja) 表示装置及び表示装置の製造方法
CN102859652A (zh) 结晶半导体的制造方法及激光退火装置
CN105118773B (zh) 准分子激光退火装置和方法
KR100683662B1 (ko) 레이저 가공 장치
KR100603330B1 (ko) 레이저 결정화 장치
Paetzel et al. Laser annealing of LTPS
Burghardt et al. Pulsed green laser beam a-Si crystallization and long line beam generation for LCD and OLED TFT-panels manufacturing
Fechner et al. 300-W XeCl excimer laser annealing and sequential lateral solidification in low-temperature polysilicon technology
KR20120119367A (ko) 레이저 빔 조사 장치
KR20080040995A (ko) 레이저 결정화 장치 및 이를 이용한 실리콘 결정화 방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant