CN106610551B - 阵列基板及液晶显示面板 - Google Patents

阵列基板及液晶显示面板 Download PDF

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CN106610551B
CN106610551B CN201710094814.XA CN201710094814A CN106610551B CN 106610551 B CN106610551 B CN 106610551B CN 201710094814 A CN201710094814 A CN 201710094814A CN 106610551 B CN106610551 B CN 106610551B
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electrode
public electrode
public
array substrate
pixel electrode
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CN106610551A (zh
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周万亮
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TCL Huaxing Photoelectric Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to PCT/CN2017/075847 priority patent/WO2018152868A1/zh
Priority to US15/544,517 priority patent/US20180267369A1/en
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Abstract

本发明提供了一种阵列基板，包括玻璃基板，所述玻璃基板上设有设于同一层的源极、漏极，在源极和漏极上设有平坦层，在平坦层上设有第一公共电极，第一公共电极上覆盖有绝缘层，在绝缘层上分别设有像素电极以及第二公共电极，像素电极经绝缘层过孔与漏极连接。本发明还公开了一种液晶显示面板，包括彩色滤光片基板，所述彩色滤光片基板包括黑色矩阵，还包括所述的阵列基板，所述第二公共电极设于与黑色矩阵位置相对应处。与现有技术相比，通过在像素电极外设置围绕其一周的第二公共电极，从而使像素电极的四周边缘位置的光透过率有所提高，而且其位置与黑色矩阵位置相对应，从而不影响开口率。

Description

阵列基板及液晶显示面板
技术领域
本发明涉及一种显示技术领域，特别是一种阵列基板及液晶显示面板。
背景技术
低温多晶硅(LowTemperature Poly-Silicon，简称为LTPS)薄膜晶体管液晶显示器(LTPS-TFT LCD)与传统的非晶硅薄膜晶体管液晶显示器相比，具有分辨率高、反应速度快、亮度高以及开口率高等优点，因此，LTPS-TFT LCD得到了越来越广泛的应用。
现有LTPS-TFT LCD的阵列基板种点反转或列反转驱动方式中，相邻的一子像素与另一子像素之间因为数据信号极性相反，往往会伴随着严重的IPS(In-Plane Switching)横向电场效应，进而产生PUSH MURA现象，面板在受到外力冲击后，产生不可恢复的色斑，当前的一种解决方案是，将相邻子像素间的像素电极间距加大，使其彼此不会太接近，但是这样会使得存在相邻子像素边缘位置光透过率低于其它位置光透过率的问题，由于高分辨率像素边缘区域空间占比较大，导致液晶显示面板整体光透过率降低。
发明内容
为克服现有技术的不足，本发明提供一种阵列基板及液晶显示面板，从而提高光透过率。
本发明提供了一种阵列基板，包括玻璃基板，所述玻璃基板上设有设于同一层的源极、漏极，在源极和漏极上设有平坦层，在平坦层上设有第一公共电极，第一公共电极上覆盖有绝缘层，在绝缘层上分别设有像素电极以及第二公共电极，像素电极经绝缘层过孔与漏极连接。
进一步地，所述像素电极与第二公共电极设置在同一层中。
进一步地，所述第二公共电极的电压可调节。
进一步地，所述第二公共电极围绕在每个像素电极外一周，相邻两个第二公共电极相互连接。
进一步地，所述像素电极四周与第二公共电极之间的距离相等。
进一步地，所述第二公共电极的图形形状为矩形。
进一步地，所述第二公共电极的图形形状随像素电极的图形形状的外轮廓可变换。
进一步地，所述第一公共电极和第二公共电极的制备材料相同。
本发明还公开了一种液晶显示面板，包括彩色滤光片基板，所述彩色滤光片基板包括黑色矩阵，还包括所述的阵列基板，所述第二公共电极设于与黑色矩阵位置相对应处。
进一步地，所述第二公共电极的宽度小于或等于黑色矩阵的宽度。
本发明与现有技术相比，通过在像素电极外设置围绕其一周的第二公共电极，从而使像素电极的四周边缘位置的光透过率有所提高，而且其位置与黑色矩阵位置相对应，从而不影响开口率。
附图说明
图1是本发明的液晶面板的结构示意图；
图2是本发明的第二公共电极的第一种设置形式的示意图；
图3是本发明的第二公共电极的第二种设置形式的示意图；
图4-1是本发明制作工艺步骤一的示意图；
图4-2是本发明制作工艺步骤二的示意图；
图4-3是本发明制作工艺步骤三的示意图；
图4-4是本发明制作工艺步骤四的示意图；
图4-5是本发明制作工艺步骤五的示意图；
图4-6是本发明制作工艺步骤六的示意图；
图4-7是本发明制作工艺步骤七的示意图；
图4-8是本发明制作工艺步骤八的示意图；
图4-9是本发明制作工艺步骤九的示意图；
图4-10是本发明制作工艺步骤十的示意图；
图4-11是本发明制作工作步骤十二的示意图。
具体实施方式
下面结合附图和实施例对本发明作进一步详细说明。
如图1所示，本发明的一种阵列基板，图中显示了阵列基板的两部分，其中左半部分为阵列基板的显示区，右半部分为阵列基板的电路驱动区；所述阵列基板包括玻璃基板1，设于玻璃基板1上的遮光层(LS)10、在遮光层10上设有缓冲层11、设置在缓冲层11上的半导体层12以及栅极绝缘层13，在栅极绝缘层13上设有栅极15，栅极15上覆盖有层间绝缘层14，在层间绝缘层14上设有位于同一层的源极2、漏极3，源极2以及漏极3与半导体层12连接，在源极2和漏极3上设有平坦层(PLN)4，在平坦层4上设有第一公共电极5，第一公共电极5上覆盖有绝缘层6，在绝缘层6上分别设有像素电极7以及第二公共电极8；所述像素电极7与第二公共电极8设置在同一层中并且采用与第一公共电极5的制备材料相同，均为氧化铟锡(ITO)材料；像素电极7经绝缘层过孔与漏极3连接，所述第二公共电极8围绕在每个像素电极7外一周，相邻两个第二公共电极8相互连接，从而提高像素电极7边缘位置的光透过率，提高光穿透均匀性，而且也可以节能降低生产成本，所述显示区中的半导体层为NMOS管，电路驱动区中的半导体层为PMOS管。
第二公共电极8的电压可依据产品需要进行电压调节，使其与第一公共电极5的电压不同，其作用是提升像素边缘液晶转向效率，并提高透光透过均匀性，达到提高面板光透过率效果。
具体地，所述像素电极7四周与第二公共电极8之间的距离相等。
本发明的一种阵列基板的制作方法，包括如下步骤：
步骤一、如图4-1所示，提供一玻璃基板1，在玻璃基板1上通过物理气相沉积(PVD)形成MO/Al并对其进行图形化形成遮光层(LS)10；
步骤二、如图4-2所示，在玻璃基板1以及遮光层10上覆盖一层缓冲层11，通过在缓冲层11上将A-Si半导体层形成多晶硅后进行图形化；所述缓冲层11为SiOx/SiNx；
步骤三、如图4-3所示，对显示区内的多晶硅通过化学气相沉积进行N离子掺杂；
步骤四、如图4-4所示，对进行N离子掺杂的多晶硅的沟道进行N离子重掺杂形成LDD(轻掺杂漏注入工艺)的显示区的半导体层12，显示区的半导体层12设于遮光层10上方；
步骤五、如图4-5所示，在显示区的半导体层12以及电路驱动区的多晶硅上形成栅极绝缘层13，在栅极绝缘层13上形成电极线(栅极15)；
步骤六、如图4-6所示，对驱动电路区的多晶硅进行P离子掺杂形成PMOS(驱动电路区的半导体层12)；
步骤七、如图4-7所示，在栅极15上制作一层层间绝缘层(ILD)14，并在层间绝缘层14上位于半导体层12的N+区以及P区上制作层间绝缘层过孔；
步骤八、如图4-8所示，在层间绝缘层14上形成源极2以及漏极3，并经过孔与半导体层12的N+区以及P区连接；
步骤九、如图4-9所示，在源极2以及漏极3上通过PHT(光刻)工艺制作平坦层(PLN)4，并在显示区的漏极处形成平坦层过孔；
步骤十、如图4-10所示，在平坦层4上成ITO(透明导电)层并图形化后形成第一公共电极5，在第一公共电极5上位于平坦层过孔处形成第一公共电极过孔；
步骤十一、如图4-11所示，在第一公共电极5上形成有绝缘层(PV)6，并在第一公共电极过孔上形成有绝缘层过孔；
步骤十二、如图1所示，在绝缘层6上通过物理气相沉积形成ITO(透明导电)层并图形化后形成像素电极7以及第二公共电极8；像素电极7经绝缘层过孔、第一公共电极过孔以及平坦层过孔与显示区中的漏极3连接，得到阵列基板。本发明中第一公共电极5以及第二公共电极8均采用ITO(透明导电)等透明电极材料制成。
如图1所示，本发明的一种液晶显示面板，包括彩色滤光片基板16，本发明中彩色滤光片基板16为现有技术中的彩色滤光片基板1；所述彩色滤光片基板16包括黑色矩阵9，液晶显示面板还包括前述的阵列基板，所述第二公共电极8设于与黑色矩阵9位置相对应处，所述第二公共电极8的宽度小于或等于黑色矩阵9的宽度，从而不会对开口率有所影响。
如图2所示，所述第二公共电极8的图形形状为矩形。
如图3所示，所述第二公共电极8的图形形状随像素电极7的图形形状的外轮廓可变换，图形的幅度小于黑色矩阵的宽度；其中从图中可以看出，与像素电极7左右相邻的这部分第二公共电极8的侧边为与像素电极7的图形的左右两侧外轮廓相适配，图3中像素电极7左右两侧的上中部以及下部均为向右侧偏移，形成了两块偏移形成的斜面，在第二公共电极8侧边的相应位置则形成的略微向左突出，突出的部分不超过黑色矩阵的宽度，通过此种形式来配合像素电极7的图形形状变化。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (9)

1.一种阵列基板，包括玻璃基板(1)，其特征在于：所述玻璃基板(1)上设有设于同一层的源极(2)、漏极(3)，在源极(2)和漏极(3)上设有平坦层(4)，在平坦层(4)上设有第一公共电极(5)，第一公共电极(5)上覆盖有绝缘层(6)，在绝缘层(6)上分别设有像素电极(7)以及第二公共电极(8)，像素电极(7)经绝缘层过孔与漏极(3)连接，所述第二公共电极(8)围绕在每个像素电极(7)外一周，相邻两个第二公共电极(8)相互连接。
2.根据权利要求1所述的阵列基板，其特征在于：所述像素电极(7)与第二公共电极(8)设置在同一层中。
3.根据权利要求1所述的阵列基板，其特征在于：所述第二公共电极(8)的电压可调节。
4.根据权利要求1所述的阵列基板，其特征在于：所述像素电极(7)四周与第二公共电极(8)之间的距离相等。
5.根据权利要求4所述的阵列基板，其特征在于：所述第二公共电极(8)的图形形状为矩形。
6.根据权利要求4所述的阵列基板，其特征在于：所述第二公共电极(8)的图形形状随像素电极(7)的图形形状的外轮廓可变换。
7.根据权利要求5或6所述的阵列基板，其特征在于：所述第一公共电极(5)和第二公共电极(8)的制备材料相同。
8.一种液晶显示面板，包括彩色滤光片基板，所述彩色滤光片基板包括黑色矩阵(9)，其特征在于：还包括如权利要求1-7任意一项所述的阵列基板，所述第二公共电极(8)设于与黑色矩阵(9)位置相对应处。
9.根据权利要求8所述的液晶显示面板，其特征在于：所述第二公共电极(8)的宽度小于或等于黑色矩阵(9)的宽度。
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