CN105514034A - Tft基板的制作方法 - Google Patents

Tft基板的制作方法 Download PDF

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CN105514034A
CN105514034A CN201610020660.5A CN201610020660A CN105514034A CN 105514034 A CN105514034 A CN 105514034A CN 201610020660 A CN201610020660 A CN 201610020660A CN 105514034 A CN105514034 A CN 105514034A
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substrate
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CN105514034B (zh
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徐向阳
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种TFT基板的制作方法，首先在基板上制作像素电极、数据线和源/漏极，然后再制作沟道保护层和氧化物半导体层；或者首先在基板上制作一层缓冲层，避免氧化物半导体层跟基板直接接触影响TFT特性，然后在源/漏极制作完成后直接制作氧化物半导体层，省去一层蚀刻阻挡层，从而可避免制作源/漏极的蚀刻制程对氧化物半导体层造成的损伤；并通过在制作公共电极的同时制作覆盖于栅极表面的保护层，以保护栅极不被腐蚀，进而可省去一层绝缘保护层的制作；从而有效简化了制程，提高了TFT基板的信赖性。

Description

TFT基板的制作方法
技术领域
本发明涉及显示技术领域，尤其涉及一种TFT基板的制作方法。
背景技术
液晶显示装置已被广泛应用于人类的生活和工作中，其中液晶显示装置的液晶面板攸关到液晶显示装置的显示效果，包括视角、明暗程度以及颜色等。
根据液晶分子转向后的排列方式分类，常见的液晶显示器可以分为：窄视角的扭曲向列(TwistedNematic-LCD，TN-LCD)、超扭曲向列(SuperTwistedNematic-LCD，STN-LCD)、双层超扭曲向列(DoubleLayerSTN-LCD，DSTN-LCD)；宽视角的横向电场切换方式(In-PlaneSwitching，IPS)、边界电场切换技术(FringeFieldSwitching，FFS)和多域垂直配向技术(Multi-DomainVerticalAlignment，MVA)等。其中，目前市场上最主流的液晶显示器采用的模式是TN型，但TN型液晶显示器在视角方面有天然痼疾，即使增加一层广视角补偿膜，仍无法满足广视角的要求。为此，许多公司都研发相关的广视角技术，IPS就是其中颇具优势的一种。
横向电场切换(IPS)技术利用空间厚度、摩擦强度并有效利用横向电场驱动的改变让液晶分子做最大的平面旋转角度来增加视角。换句话说，传统LCD显示器的液晶分子一般都在垂直-平行状态间切换，多域垂直配向技术(MVA)和PVA将其改良成垂直-双向倾斜的切换方式，而横向电场切换(IPS)则将液晶分子改为水平旋转切换作为背光通过方式，即不管在何种状态下液晶分子始终都与屏幕平行，只是在加电/常规状态下分子的旋转方向有所不同。为了配合这种结构，横向电场切换(IPS)对电极进行改良，电极做到了同侧，形成平面电场，从而避免了液晶在竖直方向上的偏转，可以达到较大的视角。横向电场切换(IPS)技术像素电极与公共电极位于同一层条状排列，由于位于电极上方的液晶无法进行面内偏转，导致横向电场切换(IPS)模式面板的有效开口率和透过率较低，为改善横向电场切换(IPS)模式的开口率，出现了边界电场切换(FFS)显示模式。
在IPS或者FFS型液晶显示装置的TFT结构中如果以a-Si:H层作为TFT沟道来使用，在高分辨率，高速驱动面板上会发生驱动不良。这是因为不能确保充足的充电电压。从高分辨率面板来看，随着分辨率的增加，在规定时间内需要驱动的TFT数量增加了，所以1个TFT的动作时间就会减少。高速驱动的面板，60Hz驱动速度时TFT需要在16msec时间内开启，120Hz时为8.3msec，240Hz时在4.2msec时间内TFT要开启。所以TFT充电时间越短，用现有的a-Si:H层的移动度特性是无法对应的。所以TFT的驱动速度需要增加,因此也需要高移动度的TFT。氧化物(Oxide)TFT，与之前的a-Si:H相比，移动度高(>10cm2/Vs)，所以高分辨率高速驱动显示驱动元件可以适用。基于以上原因，氧化物TFT技术被广泛开发，并应用于AMOLED和高规格LCD产品上。氧化物TFT的禁带宽度较大，如非晶金属氧化物半导体IGZO(氧化铟镓锌)的禁带宽度在3.5eV左右，因此对于波长大于300nm的可见光照射下，几乎不受影响，因此也是柔性显示中首选的材料之一。由于金属氧化物半导体通常采用湿法进行刻蚀，而源漏极金属也是采用湿法刻蚀，因此被沟道刻蚀(BCE)结构通常不适用于金属氧化物半导体的生产工艺，目前通常采用刻蚀阻挡(EtchStopper)型结构来制作氧化物半导体TFT。
发明内容
本发明的目的在于提供TFT基板的制作方法，可避免制作源/漏极时的蚀刻制程对氧化物半导体层造成损伤，同时可保护栅极不被腐蚀。
为实现上述目的，本发明提供一种TFT基板的制作方法，包括如下步骤：
步骤1、提供基板，在所述基板上沉积第一透明导电层，对所述第一透明导电层进行图案化处理，形成像素电极；
步骤2、在所述基板、像素电极上沉积第一金属层，对所述第一金属层进行图案化处理，形成源/漏极、数据线，所述数据线具有形成于基板的周边区域的数据线端子；
步骤3、在所述基板、像素电极、源/漏极、数据线上沉积沟道保护层；在所述沟道保护层上对应所述源/漏极上方形成第一过孔；
步骤4、在所述沟道保护层、源/漏极上沉积氧化物半导体层，对所述氧化物半导体层进行图案化处理，形成有源层；所述有源层经由所述第一过孔与所述源/漏极相接触；
步骤5、在所述沟道保护层、有源层上沉积栅极绝缘层；
步骤6、在所述栅极绝缘层上沉积第二金属层，对所述第二金属层进行图案化处理，形成栅极、及栅极扫描线，所述栅极扫描线具有形成于基板的周边区域的扫描线端子；在所述沟道保护层、及栅极绝缘层上对应所述数据线端子的上方形成第二过孔；
步骤7、在所述栅极绝缘层、栅极、及栅极扫描线上沉积第二透明导电层，对所述第二透明导电层进行图案化处理，形成公共电极、分别覆盖于栅极与栅极扫描线上方的保护层、以及经由所述第三过孔与所述数据线端子相接触的连接导线。
所述第一透明导电层、第二透明导电层的厚度为所述第一金属层、第二金属层的厚度为
所述沟道保护层的厚度为所述栅极绝缘层的厚度为所述有源层的厚度为
所述第一透明导电层、第二透明导电层的材料为ITO或IZO；所述第一金属层、第二金属层的材料为Cr、Mo、Al、或Cu。
所述沟道保护层的材料为氧化硅；所述栅极绝缘层的材料为氧化硅、氮化硅或二者的组合；所述有源层的材料为ZnO、InZnO、ZnSnO、GaInZnO、或ZrInZnO。
本发明还提供一种TFT基板的制作方法，包括如下步骤：
步骤1、提供基板，在所述基板上沉积缓冲层；
步骤2、在所述缓冲层上沉积第一透明导电层，对所述第一透明导电层进行图案化处理，形成像素电极；
步骤3、在所述缓冲层、像素电极上沉积第一金属层，对所述第一金属层进行图案化处理，形成源/漏极、数据线，所述数据线具有形成于基板的周边区域的数据线端子；
步骤4、在所述缓冲层、像素电极、源/漏极、数据线上沉积氧化物半导体层，对所述氧化物半导体层进行图案化处理，形成有源层；所述有源层与所述源/漏极相接触；
步骤5、在所述缓冲层、像素电极、源/漏极、数据线、有源层上沉积栅极绝缘层；
步骤6、在所述栅极绝缘层上沉积第二金属层，对所述第二金属层进行图案化处理，形成栅极、及栅极扫描线，所述栅极扫描线具有形成于基板的周边区域的扫描线端子；在所述栅极绝缘层上对应所述数据线端子的上方形成第三过孔；
步骤7、在所述栅极绝缘层、栅极、及栅极扫描线上沉积第二透明导电层，对所述第二透明导电层进行图案化处理，形成公共电极、分别覆盖于栅极与栅极扫描线上方的保护层、以及经由所述第三过孔与所述数据线端子相接触的连接导线。
所述第一透明导电层、第二透明导电层的厚度为所述第一金属层、第二金属层的厚度为
所述缓冲层的厚度为所述栅极绝缘层的厚度为所述有源层的厚度为
所述第一透明导电层、第二透明导电层的材料为ITO或IZO；所述第一金属层、第二金属层的材料为Cr、Mo、Al、或Cu。
所述缓冲层的材料为氧化硅；所述栅极绝缘层的材料为氧化硅、氮化硅或二者的组合；所述有源层的材料为ZnO、InZnO、ZnSnO、GaInZnO、或ZrInZnO。
本发明的有益效果：本发明的TFT基板的制作方法，首先在基板上制作像素电极、数据线和源/漏极，然后再制作沟道保护层和氧化物半导体层；或者首先在基板上制作一层缓冲层，避免氧化物半导体层跟基板直接接触影响TFT特性，然后在源/漏极制作完成后直接制作氧化物半导体层，省去一层蚀刻阻挡层，从而可避免制作源/漏极的蚀刻制程对氧化物半导体层造成的损伤；并通过在制作公共电极的同时制作覆盖于栅极表面的保护层，以保护栅极不被腐蚀，进而可省去一层绝缘保护层的制作；从而有效简化了制程，提高了TFT基板的信赖性。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的一种TFT基板的制作方法的流程图；
图2为本发明的一种TFT基板的制作方法的步骤1的示意图；
图3为本发明的一种TFT基板的制作方法的步骤2的示意图；
图4为本发明的一种TFT基板的制作方法的步骤3的示意图；
图5为本发明的一种TFT基板的制作方法的步骤4的示意图；
图6为本发明的一种TFT基板的制作方法的步骤5的示意图；
图7为本发明的一种TFT基板的制作方法的步骤6的示意图；
图8为本发明的一种TFT基板的制作方法的步骤7的示意图；
图9为本发明的另一种TFT基板的制作方法的流程图；
图10为本发明的另一种TFT基板的制作方法的步骤1的示意图；
图11为本发明的另一种TFT基板的制作方法的步骤2的示意图；
图12为本发明的另一种TFT基板的制作方法的步骤3的示意图；
图13为本发明的另一种TFT基板的制作方法的步骤4的示意图；
图14为本发明的另一种TFT基板的制作方法的步骤5的示意图；
图15为本发明的另一种TFT基板的制作方法的步骤6的示意图；
图16为本发明的另一种TFT基板的制作方法的步骤7的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明首先提供一种TFT基板的制作方法，包括如下步骤：
步骤1、如图2所示，提供基板1，在所述基板1上沉积第一透明导电层，对所述第一透明导电层进行图案化处理，形成像素电极2。
具体地，所述基板1为玻璃基板。
具体地，所述第一透明导电层的厚度为
具体地，所述第一透明导电层的材料为ITO(氧化铟锡)或IZO(氧化铟锌)。
步骤2、如图3所示，在所述基板1、像素电极2上沉积第一金属层，对所述第一金属层进行图案化处理，形成源/漏极3、数据线31，所述数据线31具有形成于基板1的周边区域的数据线端子312。
具体地，所述第一金属层的厚度为
具体地，所述第一金属层的材料为Cr(铬)、Mo(钼)、Al(铝)、或Cu(铜)。
步骤3、如图4所示，在所述基板1、像素电极2、源/漏极3、数据线31上沉积沟道保护层4。在所述沟道保护层4上对应所述源/漏极3上方形成第一过孔41。
具体地，所述沟道保护层4的厚度为
具体地，所述沟道保护层4的材料为氧化硅。
步骤4、如图5所示，在所述沟道保护层4、源/漏极3上沉积氧化物半导体层，对所述氧化物半导体层进行图案化处理，形成有源层5；所述有源层5经由所述第一过孔41与所述源/漏极3相接触。由于本发明采用首先在基板上制作像素电极、数据线和源/漏极，然后再制作沟道保护层和氧化物半导体层的方法，因此可避免制作像素电极和源/漏极的蚀刻制程中对氧化物半导体层造成的损伤。
具体地，所述有源层5的厚度为
具体地，所述有源层5的材料为ZnO、InZnO、ZnSnO、GaInZnO、或ZrInZnO。
步骤5、如图6所示，在所述沟道保护层4、有源层5上沉积栅极绝缘层6。
具体地，所述栅极绝缘层6的厚度为
具体地，所述栅极绝缘层6的材料为氧化硅、氮化硅或二者的组合。
步骤6、如图7所示，在所述栅极绝缘层6上沉积第二金属层，对所述第二金属层进行图案化处理，形成栅极7、及栅极扫描线71，所述栅极扫描线71具有形成于基板1的周边区域的扫描线端子712；在所述沟道保护层4、及栅极绝缘层6上对应所述数据线端子312的上方形成第二过孔8。
具体地，所述第二金属层的厚度为
具体地，所述第二金属层的材料为Cr、Mo、Al、或Cu。
步骤7、如图8所示，在所述栅极绝缘层6、栅极7、及栅极扫描线71上沉积第二透明导电层，对所述第二透明导电层进行图案化处理，形成公共电极9、分别覆盖于栅极7与栅极扫描线71上方的保护层91、以及经由所述第三过孔81与所述数据线端子312相接触的连接导线92。通过在制作公共电极的同时制作覆盖于栅极表面用来保护栅极不被腐蚀的保护层，进而可省去一层绝缘保护层的使用。具体的，所述连接导线92用于实现数据线31与IC芯片之间的连接。
具体地，所述第二透明导电层的厚度为
具体地，所述第二透明导电层的材料为ITO或IZO。
请参阅图9，本发明还提供另一种TFT基板的制作方法，包括如下步骤：
步骤1、如图10所示，提供基板1，在所述基板1上沉积缓冲层10。所述缓冲层10可避免氧化物半导体层跟基板1直接接触影响TFT特性。
具体地，所述基板1为玻璃基板。
具体地，所述缓冲层10的厚度为
具体地，所述缓冲层10的材料为氧化硅。
步骤2、如图11所示，在所述缓冲层10上沉积第一透明导电层，对所述第一透明导电层进行图案化处理，形成像素电极2。
具体地，所述第一透明导电层的厚度为
具体地，所述第一透明导电层的材料为ITO或IZO。
步骤3、如图12所示，在所述缓冲层10、像素电极2上沉积第一金属层，对所述第一金属层进行图案化处理，形成源/漏极3、数据线31，所述数据线31具有形成于基板1的周边区域的数据线端子312。
具体地，所述第一金属层的厚度为
具体地，所述第一金属层的材料为Cr、Mo、Al、或Cu。
步骤4、如图13所示，在所述缓冲层10、像素电极2、源/漏极3、数据线31上沉积氧化物半导体层，对所述氧化物半导体层进行图案化处理，形成有源层5；所述有源层5与所述源/漏极3相接触，可省去一层蚀刻阻挡层，并可避免制作源/漏极的蚀刻制程中对氧化物半导体层造成的损伤。
具体地，所述有源层5的厚度为
具体地，所述有源层5的材料为ZnO、InZnO、ZnSnO、GaInZnO、或ZrInZnO。
步骤5、如图14所示，在所述缓冲层10、像素电极2、源/漏极3、数据线31、有源层5上沉积栅极绝缘层6。
具体地，所述栅极绝缘层6的厚度为
具体地，所述栅极绝缘层6的材料为氧化硅、氮化硅或二者的组合。
步骤6、如图15所示，在所述栅极绝缘层6上沉积第二金属层，对所述第二金属层进行图案化处理，形成栅极7、及栅极扫描线71，所述栅极扫描线71具有形成于基板1的周边区域的扫描线端子712；在所述栅极绝缘层6上对应所述数据线端子312的上方形成第三过孔81。
具体地，所述第二金属层的厚度为
具体地，所述第二金属层的材料为Cr、Mo、Al、或Cu。
步骤7、如图16所示，在所述栅极绝缘层6、栅极7、及栅极扫描线71上沉积第二透明导电层，对所述第二透明导电层进行图案化处理，形成公共电极9、分别覆盖于栅极7与栅极扫描线71上方的保护层91、以及经由所述第三过孔81与所述数据线端子312相接触的连接导线92。通过在制作公共电极的同时制作覆盖于栅极表面用来保护栅极不被腐蚀的保护层，可省去一层绝缘保护层的使用。具体的，所述连接导线92用于实现数据线31与IC芯片之间的连接。
具体地，所述第二透明导电层的厚度为
具体地，所述第二透明导电层的材料为ITO或IZO。
综上所述，本发明的TFT基板的制作方法，首先在基板上制作像素电极、数据线和源/漏极，然后再制作沟道保护层和氧化物半导体层；或者首先在基板上制作一层缓冲层，避免氧化物半导体层跟基板直接接触影响TFT特性，然后在源/漏极制作完成后直接制作氧化物半导体层，省去一层蚀刻阻挡层，从而可避免制作源/漏极的蚀刻制程对氧化物半导体层造成的损伤；并通过在制作公共电极的同时制作覆盖于栅极表面的保护层，以保护栅极不被腐蚀，进而可省去一层绝缘保护层的制作；从而有效简化了制程，提高了TFT基板的信赖性。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (10)

1.一种TFT基板的制作方法，其特征在于，包括如下步骤：
步骤1、提供基板(1)，在所述基板(1)上沉积第一透明导电层，对所述第一透明导电层进行图案化处理，形成像素电极(2)；
步骤2、在所述基板(1)、像素电极(2)上沉积第一金属层，对所述第一金属层进行图案化处理，形成源/漏极(3)、数据线(31)，所述数据线(31)具有形成于基板(1)的周边区域的数据线端子(312)；
步骤3、在所述基板(1)、像素电极(2)、源/漏极(3)、数据线(31)上沉积沟道保护层(4)；在所述沟道保护层(4)上对应所述源/漏极(3)上方形成第一过孔(41)；
步骤4、在所述沟道保护层(4)、源/漏极(3)上沉积氧化物半导体层，对所述氧化物半导体层进行图案化处理，形成有源层(5)；所述有源层(5)经由所述第一过孔(41)与所述源/漏极(3)相接触；
步骤5、在所述沟道保护层(4)、有源层(5)上沉积栅极绝缘层(6)；
步骤6、在所述栅极绝缘层(6)上沉积第二金属层，对所述第二金属层进行图案化处理，形成栅极(7)、及栅极扫描线(71)，所述栅极扫描线(71)具有形成于基板(1)的周边区域的扫描线端子(712)；在所述沟道保护层(4)、及栅极绝缘层(6)上对应所述数据线端子(312)上方形成第二过孔(8)；
步骤7、在所述栅极绝缘层(6)、栅极(7)、及栅极扫描线(71)上沉积第二透明导电层，对所述第二透明导电层进行图案化处理，形成公共电极(9)、分别覆盖于栅极(7)与栅极扫描线(71)上方的保护层(91)、以及经由所述第二过孔(8)与所述数据线端子(312)相接触的连接导线(92)。
2.如权利要求1所述的TFT基板的制作方法，其特征在于，所述第一透明导电层、第二透明导电层的厚度为所述第一金属层、第二金属层的厚度为
3.如权利要求1所述的TFT基板的制作方法，其特征在于，所述沟道保护层(4)的厚度为所述栅极绝缘层(6)的厚度为所述有源层(5)的厚度为
4.如权利要求1所述的TFT基板的制作方法，其特征在于，所述第一透明导电层、第二透明导电层的材料为ITO或IZO；所述第一金属层、第二金属层的材料为Cr、Mo、Al、或Cu。
5.如权利要求1所述的TFT基板的制作方法，其特征在于，所述沟道保护层(4)的材料为氧化硅；所述栅极绝缘层(6)的材料为氧化硅、氮化硅或二者的组合；所述有源层(5)的材料为ZnO、InZnO、ZnSnO、GaInZnO、或ZrInZnO。
6.一种TFT基板的制作方法，其特征在于，包括如下步骤：
步骤1、提供基板(1)，在所述基板(1)上沉积缓冲层(10)；
步骤2、在所述缓冲层(10)上沉积第一透明导电层，对所述第一透明导电层进行图案化处理，形成像素电极(2)；
步骤3、在所述缓冲层(10)、像素电极(2)上沉积第一金属层，对所述第一金属层进行图案化处理，形成源/漏极(3)、数据线(31)，所述数据线(31)具有形成于基板(1)的周边区域的数据线端子(312)；
步骤4、在所述缓冲层(10)、像素电极(2)、源/漏极(3)、数据线(31)上沉积氧化物半导体层，对所述氧化物半导体层进行图案化处理，形成有源层(5)；所述有源层(5)与所述源/漏极(3)相接触；
步骤5、在所述缓冲层(10)、像素电极(2)、源/漏极(3)、数据线(31)、有源层(5)上沉积栅极绝缘层(6)；
步骤6、在所述栅极绝缘层(6)上沉积第二金属层，对所述第二金属层进行图案化处理，形成栅极(7)、及栅极扫描线(71)，所述栅极扫描线(71)具有形成于基板(1)的周边区域的扫描线端子(712)；在所述栅极绝缘层(6)上对应所述数据线端子(312)上方形成第三过孔(81)；
步骤7、在所述栅极绝缘层(6)、栅极(7)、及栅极扫描线(71)上沉积第二透明导电层，对所述第二透明导电层进行图案化处理，形成公共电极(9)、分别覆盖于栅极(7)与栅极扫描线(71)上方的保护层(91)、以及经由所述第三过孔(81)与所述数据线端子(312)相接触的连接导线(92)。
7.如权利要求6所述的TFT基板的制作方法，其特征在于，所述第一透明导电层、第二透明导电层的厚度为所述第一金属层、第二金属层的厚度为
8.如权利要求6所述的TFT基板的制作方法，其特征在于，所述缓冲层(10)的厚度为所述栅极绝缘层(6)的厚度为所述有源层(5)的厚度为
9.如权利要求6所述的TFT基板的制作方法，其特征在于，所述第一透明导电层、第二透明导电层的材料为ITO或IZO；所述第一金属层、第二金属层的材料为Cr、Mo、Al、或Cu。
10.如权利要求6所述的TFT基板的制作方法，其特征在于，所述缓冲层(10)的材料为氧化硅；所述栅极绝缘层(6)的材料为氧化硅、氮化硅或二者的组合；所述有源层(5)的材料为ZnO、InZnO、ZnSnO、GaInZnO、或ZrInZnO。
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