CN106601827A - Fast recovery diode and manufacturing method thereof - Google Patents
Fast recovery diode and manufacturing method thereof Download PDFInfo
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- CN106601827A CN106601827A CN201611159750.9A CN201611159750A CN106601827A CN 106601827 A CN106601827 A CN 106601827A CN 201611159750 A CN201611159750 A CN 201611159750A CN 106601827 A CN106601827 A CN 106601827A
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- 238000011084 recovery Methods 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 156
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 143
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims description 19
- 238000005229 chemical vapour deposition Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 239000012467 final product Substances 0.000 claims description 6
- 238000000407 epitaxy Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 11
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 102000020897 Formins Human genes 0.000 description 1
- 108091022623 Formins Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- -1 indium phosphide compound Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
Abstract
The invention discloses a fast recovery diode. The fast recovery diode comprises an N+ type gallium nitride epitaxial layer, and an N type gallium nitride epitaxial layer, an N- type gallium nitride substrate layer, a P type gallium nitride epitaxial layer, a P+ type gallium nitride epitaxial layer and an anode layer which are sequentially arranged at one side of the N+ type gallium nitride epitaxial layer from down to up, and a cathode layer is further arranged at the other side of the N+ type gallium nitride epitaxial layer. The fast recovery diode is advantaged in that gallium nitride materials are employed for manufacturing, the reverse recovery time (tRR), a current (IRR) and a softening factor (S) can be more effectively controlled, and the fast recovery diode has excellent application prospects.
Description
Technical field
The present invention relates to semiconductor applications, more particularly, it relates to a kind of fast recovery diode and preparation method thereof.
Background technology
FRD (fast recovery diode) be can fast conducting and cut-off diode, it by with three end power switch
Device such as insulated gate gate bipolar transistor (IGBT), integrated gate commutated thyristor (IGCT) etc. are used cooperatively, to turn on
Reactive current in load, shortens the charging interval of electric capacity, and suppresses the high voltage sensed because load current is instantaneous reverse, greatly
Amount is applied among the power electronics such as AC/DC convertor, pulse-width modulator and communication equipment.The master of FRD is made at present
Material is wanted to be still silicon materials.Gallium nitride (GaN) material has high breakdown electric field, low forward voltage drop and high heat conductance etc. excellent
Point, be develop microelectronic component, the novel semiconductor material of opto-electronic device, be described as after first generation germanium, silicon semiconductor material,
Third generation semi-conducting material after second filial generation GaAs, indium phosphide compound semiconductor materials.How FRD system is applied to
Make, obtain (t reverse recovery timeRR), electric current (IRR), Softening factor (S) can obtain the FRD of more efficient control, be ability
The technical problem that domain is studied always.
The content of the invention
In order to overcome the deficiencies in the prior art, it is an object of the invention to provide a kind of fast recovery diode, it is adopted
Gallium nitride material is prepared from, and its reverse recovery time of (tRR), electric current (IRR), Softening factor (S) all obtain significantly more efficient
Control, has a good application prospect.
To solve the above problems, the technical solution adopted in the present invention is as follows：
A kind of fast recovery diode, including N+ types epitaxial layer of gallium nitride and N+ type gallium nitride is successively set on from top to bottom
N type gallium nitride epitaxial layer, N-type gallium nitride substrate layer on epitaxial layer side, p-type epitaxial layer of gallium nitride, P+ type epitaxy of gallium nitride
Layer and anode layer, the N+ types epitaxial layer of gallium nitride opposite side is provided with cathode layer.
Preferably, the thickness of the N+ types epitaxial layer of gallium nitride is 10～14nm, and doping content is 4 × 1018～6 ×
1018cm-3。
Preferably, the n type gallium nitride epitaxy layer thickness is 80～120nm, and doping content is about 0.5 × 1018～1.5 ×
1018cm-3。
Preferably, the N-type gallium nitride substrate layer thickness is 2～3um, and the concentration of intrinsic carrier is 4 × 1016～6 ×
1016cm-3。
Preferably, the p-type epitaxial layer of gallium nitride thickness is 80～120nm, and doping content is 0.8 × 1018～1.2 ×
1018cm-3。
Preferably, the P+ type epitaxial layer of gallium nitride thickness is 10～14nm, and doping content is 0.8 × 1018～1.2 ×
1018cm-3。
Preferably, the anode layer is metal Ti/Au, and Ti/Au deposit thickness is
Preferably, the cathode layer is metal Ti/Al/Ni/Au, and Ti/Al/Ni/Au deposit thickness is
A kind of preparation method of fast recovery diode, including：
S101., substrate is provided；
S102. in Grown N+ type epitaxial layer of gallium nitride；
S103. n type gallium nitride epitaxial layer is grown on N+ type epitaxial layer of gallium nitride；
S104. N-type gallium nitride substrate layer is grown on n type gallium nitride epitaxial layer；
S105. the growing P-type epitaxial layer of gallium nitride on N-type gallium nitride substrate layer；
S106. P+ type epitaxial layer of gallium nitride is grown on p-type epitaxial layer of gallium nitride；
S107. the Deposition anode layer on P+ type epitaxial layer of gallium nitride；
S108. peeling liner bottom, in the deposited cathode layer on the N+ type epitaxial layer of gallium nitride of substrate layer side；900～
Short annealing 1min at 1000 DEG C, obtains final product the fast recovery diode.
Further, in step S102～S106, carried out using metal-organic chemical vapor deposition equipment method, it is described
In step S102～S103, reaction interior has been passed through SiH4Source of the gas；In step S105～S106, reaction interior has been passed through
Cp2Mg sources of the gas.
Compared to existing technology, the beneficial effects of the present invention is：Fast recovery diode adopts gallium nitride material in the present invention
Material is prepared from, and its reverse recovery time of (tRR), electric current (IRR), Softening factor (S) all obtain significantly more efficient control, have
There is good application prospect.When the fast recovery diode of the present invention applies backward voltage, because gallium nitride material has wide taboo
Band (3.4eV), high electron mobility, the fast recovery diode for producing has higher breakdown reverse voltage and bigger
Forward current；Additionally, due to the presence of the double gradual PN junction structures of (P+P) GaN/N-GaN/ (NN+) GaN, its more is improve anti-
To breakdown voltage, while enhancing voltage endurance capability, reverse recovery time also shortens, and easily realizes high-speed switch characteristic.
Description of the drawings
Fig. 1 is fast recovery diode structural representation in the present invention；
Fig. 2 is the preparation method flow chart of fast recovery diode in the present invention；
Wherein, 1 be N+ type epitaxial layer of gallium nitride, 2 be n type gallium nitride epitaxial layer, 3 be N-type gallium nitride substrate layer, 4 be P
Type epitaxial layer of gallium nitride, 5 be P+ type epitaxial layer of gallium nitride, 6 be anode layer, 7 be cathode layer.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and detailed description.
As shown in figure 1, fast recovery diode includes N+ types epitaxial layer of gallium nitride 1 and sets successively from top to bottom in the present invention
Put n type gallium nitride epitaxial layer 2, N-type gallium nitride substrate layer 3, p-type epitaxy of gallium nitride on the side of N+ types epitaxial layer of gallium nitride 1
Layer 4, P+ type epitaxial layer of gallium nitride 5 and anode layer 6, the opposite side of N+ types epitaxial layer of gallium nitride 1 is provided with cathode layer 7.In the present invention,
Positioned at the p-type epitaxial layer of gallium nitride 4 and P+ type epitaxial layer of gallium nitride of the doping content change of the top of N-type gallium nitride substrate layer 3
5, form the double gradual PN junctions of (P+P) GaN/ (N-) GaN；Positioned at the N-type of the doping content change of the lower section of N-type gallium nitride substrate layer 3
Epitaxial layer of gallium nitride 2 and N+ types epitaxial layer of gallium nitride 1, form the double gradual PN junctions of (N-) GaN/ (NN+) GaN, are monolithically fabricated (P+P)
The double gradual PN junctions of GaN/ (N-) GaN/ (NN+) GaN.In Reverse recovery, (P+P) GaN/ (N-) GaN knots consume this pair of gradual PN junction
To the greatest extent layer is quickly moved to the center of N-type gallium nitride substrate layer 3；(N-) GaN/ (NN+) GaN ties depletion layer at a slow speed to N-type gallium nitride
The center of substrate layer 3 is moved, and two depletion layer boundaries complete minority carrier extraction when overlapping, and reversely restoring process terminates.
So, (t reverse recovery timeRR), electric current (IRR), Softening factor (S) all obtain significantly more efficient control.
Further, the thickness of N+ types epitaxial layer of gallium nitride 1 is 10～14nm, and doping content is 4 × 1018～6 ×
1018cm-3.The thickness of n type gallium nitride epitaxial layer 2 is 80～120nm, and doping content is about 0.5 × 1018～1.5 × 1018cm-3。N-
The thickness of type gallium nitride substrate layer 3 is 2～3um, and the concentration of intrinsic carrier is 4 × 1016～6 × 1016cm-3.Outside p-type gallium nitride
It is 80～120nm to prolong the thickness of layer 4, and doping content is 0.8 × 1018～1.2 × 1018cm-3.The thickness of P+ type epitaxial layer of gallium nitride 5 is
10～14nm, doping content is 0.8 × 1018～1.2 × 1018cm-3.Anode layer 6 is metal Ti/Au, and Ti/Au deposit thickness isCathode layer 7 is metal Ti/Al/Ni/Au, and Ti/Al/Ni/Au deposit thickness is
As shown in Fig. 2 present invention additionally comprises a kind of preparation method of fast recovery diode, including：
S101., substrate is provided；
S102. in Grown N+ type epitaxial layer of gallium nitride；
S103. n type gallium nitride epitaxial layer is grown on N+ type epitaxial layer of gallium nitride；
S104. N-type gallium nitride substrate layer is grown on n type gallium nitride epitaxial layer；
S105. the growing P-type epitaxial layer of gallium nitride on N-type gallium nitride substrate layer；
S106. P+ type epitaxial layer of gallium nitride is grown on p-type epitaxial layer of gallium nitride；
S107. the Deposition anode layer on P+ type epitaxial layer of gallium nitride；
S108. peeling liner bottom, in the deposited cathode layer on the N+ type epitaxial layer of gallium nitride of substrate layer side；900～
Short annealing 1min at 1000 DEG C, obtains final product the fast recovery diode.
Further, in step S102～S106, carried out using metal-organic chemical vapor deposition equipment method, it is described
In step S102～S103, reaction interior has been passed through SiH4Source of the gas；In step S105～S106, reaction interior has been passed through
Cp2Mg sources of the gas.
Embodiment 1
Prepare fast recovery diode S-1
S101., substrate is provided, selects thickness to be about 200um Sapphire Substrates；
S102. by metal-organic chemical vapor deposition equipment method (MOCVD) in Grown N+ type epitaxial layer of gallium nitride
1；Growth conditionss are：Air pressure is not less than 1.0 × 10-4Pa, temperature is under the conditions of 300K, NH3 with 2.5L/min, TMGa with
, with 3L/min, H2 is passed through reative cell with 0.5L/min, and is passed through SiH to reaction interior for 25umol/min, N24Source of the gas；Obtain thick
Spend for 10nm, doping content is 6 × 1018cm-3N+ types epitaxial layer of gallium nitride 1；
S103. N-type is grown on N+ types epitaxial layer of gallium nitride 1 by metal-organic chemical vapor deposition equipment method (MOCVD)
Epitaxial layer of gallium nitride 2；Growth conditionss are：Air pressure is not less than 1.0 × 10-4Pa, temperature be 300K under the conditions of, NH3 with 2.5L/min,
TMGa is passed through reative cell with 3L/min, H2 with 25umol/min, N2 with 0.5L/min, changes reaction interior SiH4Source of the gas concentration；
Acquisition thickness is 80nm, and doping content is about 0.5 × 1018cm-3N type gallium nitride epitaxial layer 2；
S104. N-type is grown on n type gallium nitride epitaxial layer 2 by metal-organic chemical vapor deposition equipment method (MOCVD)
Gallium nitride substrate layer 3；Growth conditionss are：Air pressure is not less than 1.0 × 10-4Pa, temperature be 300K under the conditions of, NH3 with 2.5L/min,
TMGa is passed through reative cell, is closed SiH with 3L/min, H2 with 25umol/min, N2 with 0.5L/min4Source of the gas；Obtaining thickness is
2um, the concentration of intrinsic carrier is 4 × 1016cm-3N-type gallium nitride substrate layer 3；
S105. metal-organic chemical vapor deposition equipment method (MOCVD) growing P-type on N-type gallium nitride substrate layer 3 is passed through
Epitaxial layer of gallium nitride 4；Growth conditionss are：Air pressure is not less than 1.0 × 10-4Pa, temperature be 300K under the conditions of, NH3 with 2.5L/min,
TMGa is passed through reative cell with 3L/min, H2 with 25umol/min, N2 with 0.5L/min, and reaction interior is passed through Cp2Mg sources of the gas；Obtain
Thickness is 80nm, and doping content is 0.8 × 1018cm-3P-type epitaxial layer of gallium nitride 4；
S106. P+ type is grown on p-type epitaxial layer of gallium nitride 4 by metal-organic chemical vapor deposition equipment method (MOCVD)
Epitaxial layer of gallium nitride 5；Growth conditionss are：Air pressure is not less than 1.0 × 10-4Pa, temperature be 300K under the conditions of, NH3 with 2.5L/min,
TMGa is passed through reative cell with 3L/min, H2 with 25umol/min, N2 with 0.5L/min, changes reaction interior Cp2Mg source of the gas concentration；
Acquisition thickness is 10nm, and doping content is 0.8 × 1018P+ type epitaxial layer of gallium nitride 5；
S107. sputtering method Deposition anode layer 6 on P+ type epitaxial layer of gallium nitride 5 is adopted；Anode layer 6 is metal Ti/
Au, Ti/Au deposit thickness is
S108. peeling liner bottom, is being deposited using sputtering method on the N+ types epitaxial layer of gallium nitride 1 of substrate layer side
Cathode layer 7；Cathode layer 7 is metal Ti/Al/Ni/Au, and Ti/Al/Ni/Au deposit thickness is
Short annealing 1min at 900 DEG C, obtains final product fast recovery diode S-1.
By detection, fast recovery diode S-1 is in (t reverse recovery timeRR), electric current (IRR), Softening factor (S) etc.
Fast recovery diode prepared by existing silicon materials is superior in control.
Embodiment 2
Prepare fast recovery diode S-2
S101., substrate is provided, selects thickness to be about 200um Sapphire Substrates；
S102. by metal-organic chemical vapor deposition equipment method (MOCVD) in Grown N+ type epitaxial layer of gallium nitride
1；Growth conditionss are：Air pressure is not less than 1.0 × 10-4Pa, temperature is that, with 3L/min, TMGa is with 20umol/ for NH3 under the conditions of 300K
, with 2.5L/min, H2 is passed through reative cell with 1L/min, and is passed through SiH to reaction interior for min, N24Source of the gas；Obtaining thickness is
12nm, doping content is 5 × 1018cm-3N+ types epitaxial layer of gallium nitride 1；
S103. N-type is grown on N+ types epitaxial layer of gallium nitride 1 by metal-organic chemical vapor deposition equipment method (MOCVD)
Epitaxial layer of gallium nitride 2；Growth conditionss are：Air pressure is not less than 1.0 × 10-4Pa, temperature be 300K under the conditions of, NH3 with 3L/min,
TMGa is passed through reative cell with 2.5L/min, H2 with 20umol/min, N2 with 1L/min, changes reaction interior SiH4Source of the gas concentration；
Acquisition thickness is 100nm, and doping content is about 1 × 1018cm-3N type gallium nitride epitaxial layer 2；
S104. N-type is grown on n type gallium nitride epitaxial layer 2 by metal-organic chemical vapor deposition equipment method (MOCVD)
Gallium nitride substrate layer 3；Growth conditionss are：Air pressure is not less than 1.0 × 10-4Pa, temperature be 300K under the conditions of, NH3 with 3L/min,
TMGa is passed through reative cell, is closed SiH with 2.5L/min, H2 with 20umol/min, N2 with 1L/min4Source of the gas；Obtaining thickness is
2.5um, the concentration of intrinsic carrier is 5 × 1016cm-3N-type gallium nitride substrate layer 3；
S105. metal-organic chemical vapor deposition equipment method (MOCVD) growing P-type on N-type gallium nitride substrate layer 3 is passed through
Epitaxial layer of gallium nitride 4；Growth conditionss are：Air pressure is not less than 1.0 × 10-4Pa, temperature be 300K under the conditions of, NH3 with 3L/min,
TMGa is passed through reative cell with 2.5L/min, H2 with 20umol/min, N2 with 1L/min, and reaction interior is passed through Cp2Mg sources of the gas；Obtain
Thickness is 100nm, and doping content is 1 × 1018cm-3P-type epitaxial layer of gallium nitride 4；
S106. P+ type is grown on p-type epitaxial layer of gallium nitride 4 by metal-organic chemical vapor deposition equipment method (MOCVD)
Epitaxial layer of gallium nitride 5；Growth conditionss are：Air pressure is not less than 1.0 × 10-4Pa, temperature be 300K under the conditions of, NH3 with 3L/min,
TMGa is passed through reative cell with 2.5L/min, H2 with 20umol/min, N2 with 1L/min, changes reaction interior Cp2Mg source of the gas concentration；
Acquisition thickness is 12nm, and doping content is 1 × 1018cm-3P+ type epitaxial layer of gallium nitride 5；
S107. sputtering method Deposition anode layer 6 on P+ type epitaxial layer of gallium nitride 5 is adopted；Anode layer 6 is metal Ti/
Au, Ti/Au deposit thickness is
S108. peeling liner bottom, is being deposited using sputtering method on the N+ types epitaxial layer of gallium nitride 1 of substrate layer side
Cathode layer 7；Cathode layer 7 is metal Ti/Al/Ni/Au, and Ti/Al/Ni/Au deposit thickness is
Short annealing 1min at 900 DEG C, obtains final product fast recovery diode S-2.
By detection, fast recovery diode S-2 is in (t reverse recovery timeRR), electric current (IRR), Softening factor (S) etc.
Fast recovery diode prepared by existing silicon materials is superior in control.
Embodiment 3
Prepare fast recovery diode S-3
S101., substrate is provided, selects thickness to be about 200um Sapphire Substrates；
S102. by metal-organic chemical vapor deposition equipment method (MOCVD) in Grown N+ type epitaxial layer of gallium nitride
1；Growth conditionss are：Air pressure is not less than 1.0 × 10-4Pa, temperature is under the conditions of 300K, NH3 with 3.5L/min, TMGa with
, with 3L/min, H2 is passed through reative cell with 1.5L/min, and is passed through SiH to reaction interior for 25umol/min, N24Source of the gas；Obtain thick
Spend for 14nm, doping content is 4 × 1018cm-3N+ types epitaxial layer of gallium nitride 1；
S103. N-type is grown on N+ types epitaxial layer of gallium nitride 1 by metal-organic chemical vapor deposition equipment method (MOCVD)
Epitaxial layer of gallium nitride 2；Growth conditionss are：Air pressure is not less than 1.0 × 10-4Pa, temperature be 300K under the conditions of, NH3 with 3.5L/min,
TMGa is passed through reative cell with 3L/min, H2 with 25umol/min, N2 with 1.5L/min, changes reaction interior SiH4Source of the gas concentration；
Acquisition thickness is 120nm, and doping content is about 0.5 × 1018cm-3N type gallium nitride epitaxial layer 2；
S104. N-type is grown on n type gallium nitride epitaxial layer 2 by metal-organic chemical vapor deposition equipment method (MOCVD)
Gallium nitride substrate layer 3；Growth conditionss are：Air pressure is not less than 1.0 × 10-4Pa, temperature be 300K under the conditions of, NH3 with 3.5L/min,
TMGa is passed through reative cell, is closed SiH with 3L/min, H2 with 25umol/min, N2 with 1.5L/min4Source of the gas；Obtaining thickness is
2um, the concentration of intrinsic carrier is 4 × 1016cm-3N-type gallium nitride substrate layer 3；
S105. metal-organic chemical vapor deposition equipment method (MOCVD) growing P-type on N-type gallium nitride substrate layer 3 is passed through
Epitaxial layer of gallium nitride 4；Growth conditionss are：Air pressure is not less than 1.0 × 10-4Pa, temperature be 300K under the conditions of, NH3 with 3.5L/min,
TMGa is passed through reative cell with 3L/min, H2 with 25umol/min, N2 with 1.5L/min, and reaction interior is passed through Cp2Mg sources of the gas；Obtain
Thickness is 80nm, and doping content is 0.8 × 1018cm-3P-type epitaxial layer of gallium nitride 4；
S106. P+ type is grown on p-type epitaxial layer of gallium nitride 4 by metal-organic chemical vapor deposition equipment method (MOCVD)
Epitaxial layer of gallium nitride 5；Growth conditionss are：Air pressure is not less than 1.0 × 10-4Pa, temperature be 300K under the conditions of, NH3 with 3.5L/min,
TMGa is passed through reative cell with 3L/min, H2 with 25umol/min, N2 with 1.5L/min, changes reaction interior Cp2Mg source of the gas concentration；
Acquisition thickness is 14nm, and doping content is 0.8 × 1018P+ type epitaxial layer of gallium nitride 5；
S107. sputtering method Deposition anode layer 6 on P+ type epitaxial layer of gallium nitride 5 is adopted；Anode layer 6 is metal Ti/
Au, Ti/Au deposit thickness is
S108. peeling liner bottom, is being deposited using sputtering method on the N+ types epitaxial layer of gallium nitride 1 of substrate layer side
Cathode layer 7；Cathode layer 7 is metal Ti/Al/Ni/Au, and Ti/Al/Ni/Au deposit thickness is
Short annealing 1min at 1000 DEG C, obtains final product fast recovery diode S-3.
By detection, fast recovery diode S-3 is in (t reverse recovery timeRR), electric current (IRR), Softening factor (S) etc.
Fast recovery diode prepared by existing silicon materials is superior in control.
Fast recovery diode is prepared from using gallium nitride material in the present invention, and its reverse recovery time of (tRR), electricity
Stream (IRR), Softening factor (S) all obtain significantly more efficient control, have a good application prospect
It will be apparent to those skilled in the art that technical scheme that can be as described above and design, make other various
It is corresponding to change and deformation, and all these change and deformation should all belong to the protection domain of the claims in the present invention
Within.
Claims (10)
1. a kind of fast recovery diode, it is characterised in that be successively set on including N+ types epitaxial layer of gallium nitride and from top to bottom N
N type gallium nitride epitaxial layer, N-type gallium nitride substrate layer on+type epitaxial layer of gallium nitride side, p-type epitaxial layer of gallium nitride, P+ type
Epitaxial layer of gallium nitride and anode layer, the N+ types epitaxial layer of gallium nitride opposite side is provided with cathode layer.
2. the fast recovery diode as described in right will go 1, it is characterised in that the thickness of the N+ types epitaxial layer of gallium nitride is
10～14nm, doping content is 4 × 1018～6 × 1018cm-3。
3. fast recovery diode as claimed in claim 1, it is characterised in that the n type gallium nitride epitaxy layer thickness is 80
～120nm, doping content is about 0.5 × 1018～1.5 × 1018cm-3。
4. fast recovery diode as claimed in claim 1, it is characterised in that the N-type gallium nitride substrate layer thickness is 2
～3um, the concentration of intrinsic carrier is 4 × 1016～6 × 1016cm-3。
5. fast recovery diode as claimed in claim 1, it is characterised in that the p-type epitaxial layer of gallium nitride thickness is 80
～120nm, doping content is 0.8 × 1018～1.2 × 1018cm-3。
6. fast recovery diode as claimed in claim 1, it is characterised in that the P+ type epitaxial layer of gallium nitride thickness is 10
～14nm, doping content is 0.8 × 1018～1.2 × 1018cm-3。
7. fast recovery diode as claimed in claim 1, it is characterised in that the anode layer is metal Ti/Au, Ti/Au
Deposit thickness is
8. fast recovery diode as claimed in claim 1, it is characterised in that the cathode layer is metal Ti/Al/Ni/Au,
Ti/Al/Ni/Au deposit thickness is
9. the preparation method of fast recovery diode described in any one of claim 1-8, including：
S101., substrate is provided；
S102. in Grown N+ type epitaxial layer of gallium nitride；
S103. n type gallium nitride epitaxial layer is grown on N+ type epitaxial layer of gallium nitride；
S104. N-type gallium nitride substrate layer is grown on n type gallium nitride epitaxial layer；
S105. the growing P-type epitaxial layer of gallium nitride on N-type gallium nitride substrate layer；
S106. P+ type epitaxial layer of gallium nitride is grown on p-type epitaxial layer of gallium nitride；
S107. the Deposition anode layer on P+ type epitaxial layer of gallium nitride；
S108. peeling liner bottom, in the deposited cathode layer on the N+ type epitaxial layer of gallium nitride of substrate layer side；900～1000 DEG C
Lower short annealing 1min, obtains final product the fast recovery diode.
10. the preparation method of fast recovery diode as claimed in claim 10, it is characterised in that step S102～
In S106, carried out using metal-organic chemical vapor deposition equipment method, in step S102～S103, reaction interior has been passed through
SiH4Source of the gas；In step S105～S106, reaction interior has been passed through Cp2Mg sources of the gas.
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| US20050045982A1 (en) * | 2002-03-22 | 2005-03-03 | Krishna Shenai | Semiconductor device with novel junction termination |
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| CN205595340U (en) * | 2016-05-06 | 2016-09-21 | 杭州东沃电子科技有限公司 | Fast recovery diode chip structure |
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| US20050045982A1 (en) * | 2002-03-22 | 2005-03-03 | Krishna Shenai | Semiconductor device with novel junction termination |
| US20070108558A1 (en) * | 2005-11-10 | 2007-05-17 | Fuji Electric Device Technology Co., Ltd | Semiconductor device and method of manufacturing the same |
| CN102569067A (en) * | 2012-02-17 | 2012-07-11 | 北京时代民芯科技有限公司 | Method for manufacturing planar high-voltage ultrafast soft recovery diode |
| CN103208531A (en) * | 2013-04-07 | 2013-07-17 | 株洲南车时代电气股份有限公司 | Fast recovery diode (FRD) chip and manufacturing method for FRD chip |
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