CN106601731A - 带有esd保护结构的半导体结构及其制作方法 - Google Patents
带有esd保护结构的半导体结构及其制作方法 Download PDFInfo
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- CN106601731A CN106601731A CN201510674225.XA CN201510674225A CN106601731A CN 106601731 A CN106601731 A CN 106601731A CN 201510674225 A CN201510674225 A CN 201510674225A CN 106601731 A CN106601731 A CN 106601731A
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- esd
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 99
- 230000004224 protection Effects 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 51
- 239000010703 silicon Substances 0.000 claims abstract description 51
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 230000005684 electric field Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
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- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000000087 stabilizing effect Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910003978 SiClx Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (18)
Priority Applications (1)
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CN201510674225.XA CN106601731B (zh) | 2015-10-16 | 2015-10-16 | 带有esd保护结构的半导体结构及其制作方法 |
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CN201510674225.XA CN106601731B (zh) | 2015-10-16 | 2015-10-16 | 带有esd保护结构的半导体结构及其制作方法 |
Publications (2)
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CN106601731A true CN106601731A (zh) | 2017-04-26 |
CN106601731B CN106601731B (zh) | 2020-06-23 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109360807A (zh) * | 2018-09-14 | 2019-02-19 | 福建省福芯电子科技有限公司 | 集成耗尽增强管的制备方法 |
CN110911495A (zh) * | 2019-10-30 | 2020-03-24 | 珠海迈巨微电子有限责任公司 | 集成ESD防护的Trench VDMOS器件及制造方法 |
CN113421829A (zh) * | 2021-08-23 | 2021-09-21 | 上海南麟电子股份有限公司 | 带esd的功率器件结构及其制备方法 |
CN113675273A (zh) * | 2021-08-20 | 2021-11-19 | 上海华虹宏力半导体制造有限公司 | 具有esd功能的沟槽型功率器件 |
CN113764525A (zh) * | 2021-09-06 | 2021-12-07 | 华羿微电子股份有限公司 | 一种mosfet器件及制备方法 |
CN115332244A (zh) * | 2022-08-22 | 2022-11-11 | 无锡惠芯半导体有限公司 | 一种小尺寸沟槽Mosfet的ESD结构及其制造方法 |
EP4307366A4 (en) * | 2021-03-12 | 2024-08-14 | Chongqing Alpha And Omega Semiconductor Ltd | SGT MOSFET DEVICE AND METHOD FOR MANUFACTURING CONTACT HOLES IN SAME |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070176239A1 (en) * | 2006-01-31 | 2007-08-02 | M-Mos Semiconductor Sdn. Bhd. | Trenched MOSFETS with improved ESD protection capability |
CN101312189A (zh) * | 2007-05-21 | 2008-11-26 | 万国半导体股份有限公司 | 与半导体功率器件集成的多级静电放电保护电路的优化布图结构 |
CN101819972A (zh) * | 2009-02-09 | 2010-09-01 | 万国半导体有限公司 | 一种用于功率器件击穿保护的栅漏箝位和静电放电保护电路 |
CN103474426A (zh) * | 2013-09-16 | 2013-12-25 | 上海恺创电子有限公司 | 一种高容量的耐雪崩击穿的超级结器件结构 |
-
2015
- 2015-10-16 CN CN201510674225.XA patent/CN106601731B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070176239A1 (en) * | 2006-01-31 | 2007-08-02 | M-Mos Semiconductor Sdn. Bhd. | Trenched MOSFETS with improved ESD protection capability |
CN101312189A (zh) * | 2007-05-21 | 2008-11-26 | 万国半导体股份有限公司 | 与半导体功率器件集成的多级静电放电保护电路的优化布图结构 |
CN101819972A (zh) * | 2009-02-09 | 2010-09-01 | 万国半导体有限公司 | 一种用于功率器件击穿保护的栅漏箝位和静电放电保护电路 |
CN103474426A (zh) * | 2013-09-16 | 2013-12-25 | 上海恺创电子有限公司 | 一种高容量的耐雪崩击穿的超级结器件结构 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109360807A (zh) * | 2018-09-14 | 2019-02-19 | 福建省福芯电子科技有限公司 | 集成耗尽增强管的制备方法 |
CN110911495A (zh) * | 2019-10-30 | 2020-03-24 | 珠海迈巨微电子有限责任公司 | 集成ESD防护的Trench VDMOS器件及制造方法 |
EP4307366A4 (en) * | 2021-03-12 | 2024-08-14 | Chongqing Alpha And Omega Semiconductor Ltd | SGT MOSFET DEVICE AND METHOD FOR MANUFACTURING CONTACT HOLES IN SAME |
CN113675273A (zh) * | 2021-08-20 | 2021-11-19 | 上海华虹宏力半导体制造有限公司 | 具有esd功能的沟槽型功率器件 |
CN113675273B (zh) * | 2021-08-20 | 2024-02-02 | 上海华虹宏力半导体制造有限公司 | 具有esd功能的沟槽型功率器件 |
CN113421829A (zh) * | 2021-08-23 | 2021-09-21 | 上海南麟电子股份有限公司 | 带esd的功率器件结构及其制备方法 |
CN113764525A (zh) * | 2021-09-06 | 2021-12-07 | 华羿微电子股份有限公司 | 一种mosfet器件及制备方法 |
CN115332244A (zh) * | 2022-08-22 | 2022-11-11 | 无锡惠芯半导体有限公司 | 一种小尺寸沟槽Mosfet的ESD结构及其制造方法 |
CN115332244B (zh) * | 2022-08-22 | 2023-11-07 | 无锡惠芯半导体有限公司 | 一种小尺寸沟槽Mosfet的ESD结构及其制造方法 |
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CN106601731B (zh) | 2020-06-23 |
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Effective date of registration: 20200107 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Applicant after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Applicant before: BYD Co.,Ltd. |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kwai Chung street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |