CN106575085B - 光刻设备和制造器件的方法 - Google Patents

光刻设备和制造器件的方法 Download PDF

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Publication number
CN106575085B
CN106575085B CN201580038295.4A CN201580038295A CN106575085B CN 106575085 B CN106575085 B CN 106575085B CN 201580038295 A CN201580038295 A CN 201580038295A CN 106575085 B CN106575085 B CN 106575085B
Authority
CN
China
Prior art keywords
reflector
facet
independent pilot
field
pupil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580038295.4A
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English (en)
Chinese (zh)
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CN106575085A (zh
Inventor
简·伯纳德·普莱彻尔墨斯·范斯库特
S·比林
M·恩德林斯
M·M·埃斯卡兰特
T·格鲁纳
L·维施迈尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
ASML Netherlands BV
Original Assignee
Carl Zeiss SMT GmbH
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of CN106575085A publication Critical patent/CN106575085A/zh
Application granted granted Critical
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201580038295.4A 2014-07-15 2015-07-06 光刻设备和制造器件的方法 Active CN106575085B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14177025.5 2014-07-15
EP14177025 2014-07-15
PCT/EP2015/065346 WO2016008754A1 (en) 2014-07-15 2015-07-06 Lithography apparatus and method of manufacturing devices

Publications (2)

Publication Number Publication Date
CN106575085A CN106575085A (zh) 2017-04-19
CN106575085B true CN106575085B (zh) 2019-03-15

Family

ID=51176262

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580038295.4A Active CN106575085B (zh) 2014-07-15 2015-07-06 光刻设备和制造器件的方法

Country Status (5)

Country Link
JP (1) JP6698063B2 (ko)
KR (1) KR102523508B1 (ko)
CN (1) CN106575085B (ko)
NL (1) NL2015073A (ko)
WO (1) WO2016008754A1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107885038A (zh) * 2016-09-30 2018-04-06 上海微电子装备（集团）股份有限公司 照明均匀性校正装置、校正方法以及一种曝光投影系统
EP3647872A1 (en) * 2018-11-01 2020-05-06 ASML Netherlands B.V. A method for controlling the dose profile adjustment of a lithographic apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012207511A1 (de) * 2012-05-07 2013-05-08 Carl Zeiss Smt Gmbh Facettenspiegel

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6753947B2 (en) * 2001-05-10 2004-06-22 Ultratech Stepper, Inc. Lithography system and method for device manufacture
US7123348B2 (en) * 2004-06-08 2006-10-17 Asml Netherlands B.V Lithographic apparatus and method utilizing dose control
EP2243047B1 (en) 2008-02-15 2021-03-31 Carl Zeiss SMT GmbH Facet mirror for use in a projection exposure apparatus for microlithography
DE102009045694B4 (de) * 2009-10-14 2012-03-29 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikrolithographie sowie Beleuchtungssystem und Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik
US9372413B2 (en) * 2011-04-15 2016-06-21 Asml Netherlands B.V. Optical apparatus for conditioning a radiation beam for use by an object, lithography apparatus and method of manufacturing devices
DE102012204273B4 (de) * 2012-03-19 2015-08-13 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithografie
DE102012213515A1 (de) * 2012-08-01 2014-02-06 Carl Zeiss Smt Gmbh Verfahren zum Betreiben einer mikrolithographischen Projektionsbelichtungsanlage

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012207511A1 (de) * 2012-05-07 2013-05-08 Carl Zeiss Smt Gmbh Facettenspiegel

Also Published As

Publication number Publication date
CN106575085A (zh) 2017-04-19
KR20170042592A (ko) 2017-04-19
NL2015073A (en) 2016-04-12
WO2016008754A1 (en) 2016-01-21
JP2017520799A (ja) 2017-07-27
KR102523508B1 (ko) 2023-04-20
JP6698063B2 (ja) 2020-05-27

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