CN106567036B - 一种手术器械刃口表面的处理方法 - Google Patents

一种手术器械刃口表面的处理方法 Download PDF

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CN106567036B
CN106567036B CN201610948350.XA CN201610948350A CN106567036B CN 106567036 B CN106567036 B CN 106567036B CN 201610948350 A CN201610948350 A CN 201610948350A CN 106567036 B CN106567036 B CN 106567036B
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邢佑强
吴泽
刘磊
黄鹏
牛亚峰
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Abstract

本发明属于医疗器械制造领域，涉及了一种手术器械刃口表面的处理方法，该方法的主要特征是在不锈钢手术器械刃口表面制备出微、纳米复合织构，同时在织构表面沉积Si/ta‑C涂层。该方法制备的纳米织构能够有效地提高Si/ta‑C涂层与基体的结合强度，同时，微、纳米织构能够产生多齿微切削作用且能够有效地存储组织液，有助于降低切削阻力，减小对组织的撕裂从而降低疼痛；另一方面，Si/ta‑C涂层能够有效地减少手术器械刃口部的磨损，从而改善手术器械的耐磨性，提高其使用寿命。

Description

一种手术器械刃口表面的处理方法
技术领域
本发明属于医疗器械制造领域，涉及了一种手术器械刃口表面的处理工艺。
背景技术
手术剪刀及手术刀等是最常用的手术器械，其广泛的应用于切割皮肤表层、分离深部组织、手术缝合等。一般的金属手术刀件基体材料多为不锈钢，其表面硬度较低，且随着使用次数的增加，不锈钢手术刀件在化学药剂消毒过程中，表面出现腐蚀破坏的现象。另一方面，手术刀件在切割及分离组织时容易造成组织撕裂，从而增加了患者疼痛感。
为解决上述问题，一般采用的方法是材料表面改性，包括离子注入、表面渗氮和涂层技术等。中国专利“申请号20072003290.0”报道了采用化学气相蒸镀法和物理气相蒸镀法在手术刀刃口表面沉积一层纳米金刚石薄膜来提高手术刀的化学稳定性和硬度，从而提高使用寿命。中国专利“申请号201320221551.1”报道了一种纳米ta-C镀层手术刀，该刀具表面沉积一层ta‐C镀层，从而增加了手术刀具的锋利度，改善刀具的耐磨性，减轻了病人痛苦。中国专利“申请号201010136551.2”报道了一种医用不锈钢刀锯表面制备非晶碳涂层的方法，该方法制备的非晶态碳薄膜提高了医用不锈钢材料表面的硬度和力学性能。
发明内容
技术问题：本发明的目的在于克服上述现有技术的不足，提供一种手术器械刃口表面的处理方法，该方法有助于降低切削阻力，减小对组织的撕裂从而降低疼痛；另一方面，Si/ta-C涂层能够有效地减少手术器械刃口部的磨损，从而改善手术器械的耐磨性，提高其使用寿命。
技术方案：本发明是一种手术器械刃口表面的处理方法，所述的手术器械刃口表面具有微、纳米复合织构，织构表面沉积Si/ta-C涂层，Si/ta-C涂层与基体之间有TiSiN和Ti过渡层。
其制备方法的具体步骤如下：
步骤1).在刃口表面制备出微、纳米复合织构
a.将手术器械刃口表面抛光至镜面，依次放在丙酮和酒精溶液中超声清洗20-30min，进行去油污处理，
b.采用纳秒激光在刃口表面加工出均匀分布的不同形状微米级织构，其中，微米级织构宽度为20-100μm，深度为20-50μm；纳秒激光加工参数为：功率为10-15W，扫描速度为5-50mm/s，频率为5-8kHz，扫描遍数为1-3遍，
c.采用飞秒激光在刃口表面加工出均匀分布的纳米级织构，其中，纳米级织构宽度为100-400nm，深度为20-100nm，周期为300-800nm；飞秒激光加工参数为：能量为1.5-2.5μJ，扫描速度为200-1500μm/s，频率为500Hz，扫描遍数为1-3遍，
d.将织构化后的手术器械分别放在丙酮和酒精中超声清洗20min，待干燥后进行表面涂层处理；
步骤2).在织构表面沉积Si/ta-C涂层
2a.前处理：将干燥后的手术器械迅速放入镀膜机真空室，真空室本底真空为7.0×10-3Pa，加热至180℃，保温时间30-40min，
2b.离子清洗：通入Ar气，其压力为0.6-1.5Pa，开启偏压电源，电压800-900V，占空比0.2，辉光放电清洗20-30min；偏压降低至200-300V，开启离子源离子清洗20-30min，开启电弧源Ti靶，偏压400-600V，靶电流40-50A，离子轰击Ti靶1-2min，
2c.沉积Ti：调整Ar气压至0.4-0.5Pa，偏压降低至100-200V，电弧镀Ti 1-5min，
2d.沉积TiSiN：调整工作气压为0.5-0.6Pa，偏压80-150V，Ti靶电流80-100A；开启N2，调整N2流量为100-200sccm，沉积温度为200-260℃，开启中频Si靶电流10-20A，电弧镀+中频磁控溅射沉积TiSiN 2-5min，
2e.沉积Si/ta-C涂层：关闭Ti靶材，关闭N2，调整Ar气压至1-1.5Pa，偏压至150-300V，调整Si靶电流3-5A，开启石墨阴极电弧电源，电流调制60-100A，电弧镀+中频磁控溅射沉积Si/ta-C 5-15min，
2f.后处理：关闭Si靶和石墨靶，关闭偏压电源、离子源及气体源，保温30min，涂层结束。
有益效果：该方法的主要特征是在不锈钢手术器械刃口表面制备出微、纳米复合织构，同时在织构表面沉积Si/ta-C涂层。该方法制备的纳米织构能够有效地提高Si/ta-C涂层与基体的结合强度，同时，微、纳米织构能够产生多齿微切削作用且能够有效地存储组织液，有助于降低切削阻力，减小对组织的撕裂从而降低疼痛；另一方面，Si/ta-C涂层能够有效地减少手术器械刃口部的磨损，从而改善手术器械的耐磨性，提高其使用寿命。
附图说明
图为本发明的一种手术器械刃口表面的处理工艺示意图。图1为本发明的正面示意图，图2为图1的剖面图。
图中：1为微米级织构，2为纳米级织构，3为器械刃口，4为Ti过渡层，5为TiSiN过渡层，6为Si/ta-C涂层，7为手术器械表面，8为手术器械基体。
具体实施方式
本发明是通过以下方式实现的。
本发明的手术器械刃口表面的处理方法，包括含有刃口的手术刀及手术剪等手术器械，基体材料为不锈钢，刃口表面具有微、纳米复合织构，织构表面沉积Si/ta-C涂层，Si/ta-C涂层与基体之间有TiSiN和Ti过渡层，具体步骤如下：
1)在刃口表面制备出微、纳米复合织构
(1)将手术器械刃口表面抛光至镜面，依次放在丙酮和酒精溶液中超声清洗20-30min，进行去油污处理。
(2)采用纳秒激光在刃口表面加工出均匀分布的不同形状微米级织构，其中，微米级织构宽度为20-100μm，深度为20-50μm；纳秒激光加工参数为：功率为10-15W，扫描速度为5-50mm/s，频率为5-8kHz，扫描遍数为1-3遍。
(3)采用飞秒激光在刃口表面加工出均匀分布的纳米级织构，其中，纳米级织构宽度为100-400nm，深度为20-100nm，周期为300-800nm；飞秒激光加工参数为：能量为1.5-2.5μJ，扫描速度为200-1500μm/s，频率为500Hz，扫描遍数为1-3遍。
(4)将织构化后的手术器械分别放在丙酮和酒精中超声清洗20min，待干燥后进行表面涂层处理。
2)在织构表面沉积Si/ta-C涂层
(1)前处理：将干燥后的手术器械迅速放入镀膜机真空室，真空室本底真空为7.0×10-3Pa，加热至180℃，保温时间30-40min。
(2)离子清洗：通入Ar气，其压力为0.6-1.5Pa，开启偏压电源，电压800-900V，占空比0.2，辉光放电清洗20-30min；偏压降低至200-300V，开启离子源离子清洗20-30min，开启电弧源Ti靶，偏压400-600V，靶电流40-50A，离子轰击Ti靶1-2min。
(3)沉积Ti：调整Ar气压至0.4-0.5Pa，偏压降低至100-200V，电弧镀Ti 1-5min。
(4)沉积TiSiN：调整工作气压为0.5-0.6Pa，偏压80-150V，Ti靶电流80-100A；开启N2，调整N2流量为100-200sccm，沉积温度为200-260℃，开启中频Si靶电流10-20A，电弧镀+中频磁控溅射沉积TiSiN 2-5min。
(5)沉积Si/ta-C涂层：关闭Ti靶材，关闭N2。调整Ar气压至1-1.5Pa，偏压至150-300V。调整Si靶电流3-5A，开启石墨阴极电弧电源，电流调制60-100A，电弧镀+中频磁控溅射沉积Si/ta-C 5-15min。
(6)后处理：关闭Si靶和石墨靶，关闭偏压电源、离子源及气体源，保温30min，涂层结束。
实例1：
1)在手术刀刃口表面制备出微、纳米复合织构
(1)将手术刀刃口表面抛光至镜面，依次放在丙酮和酒精溶液中超声清洗20min，进行去油污处理。
(2)采用纳秒激光在刃口表面加工出均匀分布的沟槽形微米级织构，其中，微沟槽织构宽度为20μm，深度为20μm；纳秒激光加工参数为：功率为10W，扫描速度为5mm/s，频率为5kHz，扫描遍数为1遍。
(3)采用飞秒激光在刃口表面加工出均匀分布的纳米级波纹织构，其中，纳米级波纹织构宽度为100nm，深度为30nm，周期为300nm；飞秒激光加工参数为：能量为1.5μJ，扫描速度为300μm/s，频率为500Hz，扫描遍数为1遍。
(4)将织构化后的手术刀分别放在丙酮和酒精中超声清洗20min，待干燥后进行表面涂层处理。
2)在织构表面沉积Si/ta-C涂层
(1)前处理：将干燥后的手术刀迅速放入镀膜机真空室。真空室本底真空7.0×10- 3Pa，加热至180℃，保温时间30min。
(2)离子清洗：通入Ar气，其压力为0.8Pa，开启偏压电源，电压800V，占空比0.2，辉光放电清洗20min；偏压降低至200V，开启离子源离子清洗20min，开启电弧源Ti靶，偏压450V，靶电流40A，离子轰击Ti靶1min。
(3)沉积Ti：调整Ar气压至0.4Pa，偏压降低至120V，电弧镀Ti 1min。
(4)沉积TiSiN：调整工作气压为0.5Pa，偏压100V，Ti靶电流80A；开启N2，调整N2流量为100sccm，沉积温度为200℃，开启中频Si靶电流10A，电弧镀+中频磁控溅射沉积TiSiN2min。
(5)沉积Si/ta-C涂层：关闭Ti靶材，关闭N2。调整Ar气压至1Pa，偏压至180V。调整Si靶电流3A，开启石墨阴极电弧电源，电流调制60A，电弧镀+中频磁控溅射沉积Si/ta-C5min。
(6)后处理：关闭Si靶和石墨靶，关闭偏压电源、离子源及气体源，保温30min，涂层结束。
实例2：
1)在手术剪刃口表面制备出微、纳米复合织构
(1)将手术剪刃口表面抛光至镜面，依次放在丙酮和酒精溶液中超声清洗30min，进行去油污处理。
(2)采用纳秒激光在刃口表面加工出均匀分布的凹坑形微米级织构，其中，微凹坑织构直径为80μm，深度为50μm；纳秒激光加工参数为：功率为12W，扫描速度为30mm/s，频率为8kHz，扫描遍数为2遍。
(3)采用飞秒激光在刃口表面加工出均匀分布的纳米级波纹织构，其中，纳米级波纹织构宽度为300nm，深度为80nm，周期为700nm；飞秒激光加工参数为：能量为2.5μJ，扫描速度为1000μm/s，频率为500Hz，扫描遍数为2遍。
(4)将织构化后的手术剪分别放在丙酮和酒精中超声清洗20min，待干燥后进行表面涂层处理。
2)在织构表面沉积Si/ta-C涂层
(1)前处理：将干燥后的手术剪迅速放入镀膜机真空室。真空室本底真空7.0×10- 3Pa，加热至180℃，保温时间40min。
(2)离子清洗：通入Ar气，其压力为1.5Pa，开启偏压电源，电压900V，占空比0.2，辉光放电清洗30min；偏压降低至300V，开启离子源离子清洗20min，开启电弧源Ti靶，偏压550V，靶电流50A，离子轰击Ti靶2min。
(3)沉积Ti：调整Ar气压至0.5Pa，偏压降低至200V，电弧镀Ti 4min。
(4)沉积TiSiN：调整工作气压为0.6Pa，偏压120V，Ti靶电流100A；开启N2，调整N2流量为180sccm，沉积温度为250℃，开启中频Si靶电流20A，电弧镀+中频磁控溅射沉积TiSiN4min。
(5)沉积Si/ta-C涂层：关闭Ti靶材，关闭N2。调整Ar气压至1.5Pa，偏压至300V。调整Si靶电流5A，开启石墨阴极电弧电源，电流调制90A，电弧镀+中频磁控溅射沉积Si/ta-C10min。
(6)后处理：关闭Si靶和石墨靶，关闭偏压电源、离子源及气体源，保温30min，涂层结束。

Claims (1)

1.一种手术器械刃口表面的处理方法，其特征在于：所述的手术器械刃口表面具有微、纳米复合织构，织构表面沉积Si/ta-C涂层，Si/ta-C涂层与基体之间有TiSiN和Ti过渡层；其制备方法的具体步骤如下：
步骤1).在刃口表面制备出微、纳米复合织构
a.将手术器械刃口表面抛光至镜面，依次放在丙酮和酒精溶液中超声清洗20-30min，进行去油污处理，
b.采用纳秒激光在刃口表面加工出均匀分布的不同形状微米级织构，其中，微米级织构宽度为20-100μm，深度为20-50μm；纳秒激光加工参数为：功率为10-15W，扫描速度为5-50mm/s，频率为5-8kHz，扫描遍数为1-3遍，
c.采用飞秒激光在刃口表面加工出均匀分布的纳米级织构，其中，纳米级织构宽度为100-400nm，深度为20-100nm，周期为300-800nm；飞秒激光加工参数为：能量为1.5-2.5μJ，扫描速度为200-1500μm/s，频率为500Hz，扫描遍数为1-3遍，
d.将织构化后的手术器械分别放在丙酮和酒精中超声清洗20min，待干燥后进行表面涂层处理；
步骤2).在织构表面沉积Si/ta-C涂层
2a.前处理：将干燥后的手术器械迅速放入镀膜机真空室，真空室本底真空为7.0×10- 3Pa，加热至180℃，保温时间30-40min，
2b.离子清洗：通入Ar气，其压力为0.6-1.5Pa，开启偏压电源，电压800-900V，占空比0.2，辉光放电清洗20-30min；偏压降低至200-300V，开启离子源离子清洗20-30min，开启电弧源Ti靶，偏压400-600V，靶电流40-50A，离子轰击Ti靶1-2min，
2c.沉积Ti：调整Ar气压至0.4-0.5Pa，偏压降低至100-200V，电弧镀Ti 1-5min，
2d.沉积TiSiN：调整工作气压为0.5-0.6Pa，偏压80-150V，Ti靶电流80-100A；开启N2，调整N2流量为100-200Sccm，沉积温度为200-260℃，开启中频Si靶电流10-20A，电弧镀+中频磁控溅射沉积TiSiN 2-5min，
2e.沉积Si/ta-C涂层：关闭Ti靶材，关闭N2，调整Ar气压至1-1.5Pa，偏压至150-300V，调整Si靶电流3-5A，开启石墨阴极电弧电源，电流调制60-100A，电弧镀+中频磁控溅射沉积Si/ta-C 5-15min，
2f.后处理：关闭Si靶和石墨靶，关闭偏压电源、离子源及气体源，保温30min，涂层结束。
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