CN106564226A - 一种石墨烯薄膜的目标基底及其制备方法、石墨烯薄膜的制备方法 - Google Patents

一种石墨烯薄膜的目标基底及其制备方法、石墨烯薄膜的制备方法 Download PDF

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CN106564226A
CN106564226A CN201610881802.7A CN201610881802A CN106564226A CN 106564226 A CN106564226 A CN 106564226A CN 201610881802 A CN201610881802 A CN 201610881802A CN 106564226 A CN106564226 A CN 106564226A
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graphene
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王小蓓
秦喜超
谭化兵
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Changzhou sixth element Semiconductor Co., Ltd
WUXI GRAPHENE FILM Co.,Ltd.
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Abstract

本发明公开了一种石墨烯薄膜的目标基底,为基底膜/胶膜的复合结构,所述胶膜内含有聚乙烯吡咯烷酮。本发明采用在目标基底上涂布一层含有聚乙烯吡咯烷酮的胶水,形成一层薄薄的胶膜,在胶膜表面转移单层石墨烯,得到石墨烯复合膜,石墨烯与目标基底的附着力会有较大的提升,并且石墨烯膜的方阻也有所下降,可降至180Ω/□,用剥离力为5N的胶带粘在石墨烯表面撕扯,石墨烯没有损坏。

Description

一种石墨烯薄膜的目标基底及其制备方法、石墨烯薄膜的制 备方法
技术领域
本发明涉及一种石墨烯薄膜制备过程中的转移技术,具体涉及一种经处理得到的石墨烯薄膜的基底及石墨烯薄膜的制备方法。
背景技术
在个人电脑、电视、手机、车载导航等电子设备上,液晶显示元件、触摸屏的使用得到了普及。对于这些液晶显示元件、触摸屏等器件而言,透明的配线、像素电极或端子的一部分中需要使用透明导电膜。作为透明导电膜的材料,一直以来,多使用氧化铟锡等材料,但由于铟元素是稀有金属,并且铟的氧化物有毒,不环保。在此背景下,石墨烯材料受到了人们极大关注。石墨烯是碳原子按六角结构紧密堆积成的单原子层二维晶体,除了具有优异的光学、热学、力学等特性,石墨烯还具有优越的电性能。
然而,由于石墨烯是二维的原子晶体薄膜,厚度仅有0.34nm,要使石墨烯能够真正的使用必须将石墨烯转移至三维的目标衬底上,因此石墨烯的转移技术是不可或缺的工艺手段。目前的转移工艺得到的石墨烯膜,通常石墨烯与基底之间的附着力比较差,轻轻触碰就会损坏石墨烯。因此如何洁净地牢固地,并有效地转移石墨烯正越来越受到关注。
在转移CVD石墨烯方面有以下几种技术,第一,将生长好的石墨烯(结构为石墨烯/基底//石墨烯,生长基底为金属或合金)以压力或加热或UV固化的方式与涂有胶黏剂或固化剂转移目标基底压合在一起,后采用刻蚀的方法舍弃表层石墨烯从而得到目标基底/石墨烯结构。这种方法只适用于柔性目标较低,对Si/SiO2、玻璃基底等转移较为困难,而且代价较高,附着力和方阻都会受到较大影响。第二种方法是胶膜(PDMS(聚二甲基硅氧烷)胶膜最优)转移法。该方法将石墨烯/生长基底/石墨烯的刻蚀与转移分为两个阶段,在刻蚀阶段将胶膜与石墨烯/生长基底/石墨烯复合,刻蚀过后形成胶膜/石墨烯结构,因为胶膜与石墨烯间的附着力很差,胶膜上的石墨烯很容易转移到任意的柔性和非柔性基底。这种方法适用基底很广,而且转移干净,残留杂质很少。但是,目标基底与石墨烯之间附着力较差和方阻及方阻均匀性上升的问题。于是,为了解决这个问题,有的研究人员在PET表面涂一层EVA(乙烯-醋酸乙烯共聚物)。这种方法成为目前状态下解决石墨烯附着力差的常用方法。可是,由于EVA的形变大,耐热性差转移后的石墨烯方阻上升较大。
发明内容
本发明的目的在于针对现有技术的不足,提供了一种可与石墨烯牢固结合的目标基底;
本发明的另一目的是提供上述目标基底的制备方法;
本发明的又一目的是提供两种利用上述处理液的石墨烯薄膜的制备方法;
本发明的又一目的是提供一种基于上述基底的石墨烯薄膜的制备方法,该方法得到的石墨烯薄膜的方阻更低。
本发明的目的通过以下技术方案来具体实现:
一种石墨烯薄膜的目标基底,为基底膜/胶膜的复合结构,所述胶膜内含有聚乙烯吡咯烷酮。
优选的,所述基底膜采用PET、PC、PMMA、PP、PE、PEN、Si/SiO2或玻璃。基底膜根据需要,如柔性度的需求、透明度的需求、薄厚度的需求自由选择。然而,现有技术中,采用硬度高的Si/SiO2、玻璃等,效果较PET等透性基底膜的效果差距很大,无法真正的实现与石墨烯良好的粘附,不能参与到实际的应用和工业化生产中。而对于柔性基底膜,在现有技术状况下,与石墨烯的粘附效果也无法达到支撑大规模工业生产的成品率和寿命要求。本发明可以实现任何基底膜与石墨烯之间的良好粘附效果且不影响石墨烯的方阻。
优选地,所述胶膜的厚度为10nm-20μm。例如:10nm、50nm、100nm、150nm、200nm、500nm、1μm、2μm、3μm、4μm、5μm、7μm、8μm、9μm、10μm、12μm、14μm、15μm、16μm、18μm、20μm等。一般来说,所得胶膜厚度为1-2μm时效果最佳。
优选地,所述胶膜中含有1-50%的聚乙烯吡咯烷酮,例如:1%、5%、10%、15%、20%、25%、30%、35%、40%、45%、50%,等等。胶膜中含有20%的聚乙烯吡咯烷酮为佳。其余成分为在液态时可溶解聚乙烯吡咯烷酮的固化胶等。
上述的石墨烯膜的目标基底的制备方法,将基底膜上涂布一层含有聚乙烯吡咯烷酮溶液,固化,形成基底膜/胶膜的复合结构。
优选地,所述聚乙烯吡咯烷酮溶液的溶剂为可溶解聚乙烯吡咯烷酮的有机溶剂。
优选地,所述聚乙烯吡咯烷酮溶液中含有1-50%的聚乙烯吡咯烷酮,比如:1%、2%、3.5%、5%、5.5%、6%、8%、10%、13%、15.5%、17%、20%、24%、27%、30%、32%、35%、38%、40%、42.5%、45%、48%、50%,等。进一步的,优选含有20%的聚乙烯吡咯烷酮。聚乙烯吡咯烷酮是一种非离子型高分子化合物,常被应用于医药、食品加工和日化领域,未曾有人将其应用于石墨烯转移技术中。由于聚乙烯吡咯烷酮具有很强的吸水性能和流动性,针对其在石墨烯转移过程中的作用影响,本发明的发明人从多角度、每个细小流程等全面的分析实验,得到其含量小于1%时,石墨烯与基底的贴合效果达不到理想状态,大于50%时,对涂覆、固化等工艺的要求过高,不易于批量的生产操作,且效果提升不高。且聚乙烯吡咯烷酮含量过高,由于其极强的吸水性,虽然对制备石墨烯薄膜成品无影响,但对下游技术中作成器件和器件的应用会有一定的影响。同时,由于聚乙烯吡咯烷酮的流动性很强,在清洗等工艺中容易流失,造成工艺结果不稳定,无法真正的大批量的产业化生产。除此以外,本发明人还结合了很多其它因素的研究,综合各因素的相互作用影响之后,将固化胶水中掺入聚乙烯吡咯烷酮,成为聚乙烯吡咯烷酮溶液,使其流动性和吸水性得到控制,且可以最充分的发挥其对石墨烯与目标基底膜的界面影响力及对石墨烯品质的保护作用,研究结果为含有20%的聚乙烯吡咯烷酮时,效果最佳。
优选地,所述有机溶剂为热固化胶水或UV固化胶水。所述热固化胶水或UV固化胶水为液态的胶粘剂,成分中并不含有水。
进一步优选地,所述涂布聚乙烯吡咯烷酮溶液的厚度为10nm-10μm,例如:10nm、20nm、50nm、100nm、150nm、200nm、250nm、300nm、400nm、500nm、700nm、800nm、900nm、1μm、1.5μm、2μm、3μm、4μm、5μm、6μm、7μm、8μm、9μm、10μm,等。进一步地,优选500nm-10μm,最佳为3μm。胶膜过薄,一来不好操作,二来影响转移后基底膜与石墨烯的牢固性,尤其是玻璃等硬质基底膜。胶膜过厚,对固化工艺要求过高,从而会影响最终的产品质量,容易造成产品良率降低的问题。针对此,经本发明的发明人深入的研究、反复实验和应用测试等,确实聚乙烯吡咯烷酮溶液在涂布时,以500nm-10μm为优选、最佳为3μm,工艺上容易操作和精准控制,又得到最优质的产品,且批量的产业化生产也不会对环境造成影响,符合本发明申请人为应用于人类社会而创新的目标。
所述固化,根据需求,可选择加热干燥、UV干燥或者自然晾干。
一种石墨烯薄膜的制备方法,采用上述的方法制得的基底膜/胶膜作为目标基底,包括如下步骤:
1)将胶膜其中带胶的一面与生长有石墨烯的金属衬底的石墨烯一面贴合在一起;
2)去除金属衬底,得到胶膜/石墨烯的结构;
3)将步骤2)得到的胶膜/石墨烯复合膜的石墨烯一面与胶膜/基底膜的胶面贴合在一起,形成胶膜/石墨烯/胶膜/基底膜的结构;
6)揭除表面的胶膜,得到石墨烯/胶膜/基底膜的复合结构。
步骤1)中所述胶膜为市售PET硅胶保护膜、PET亚克力保护膜、PC硅胶保护膜、PC亚克力保护膜、PMMA硅胶保护膜、PMMA亚克力保护膜,PP硅胶保护膜、PP亚克力保护膜、PE硅胶保护膜、PE亚克力保护膜其中的一种。
金属衬底为铜箔或者镍箔等。
优选地,所述步骤1)和所述步骤3)中,采用辊压的方式进行贴合作业。压辊贴合的方式为普通压辊贴合,贴合的过程中可以根据需求施加一定的温度和压力,应用于本发明石墨烯转移中,在常规辊压的同时施以50-200℃的温度,比如将辊轴加热至50-200℃。优选辊压的温度为120℃。此时,贴合效果最佳,对石墨烯薄膜无任何不良影响。
本发明通过在目标基底上涂布一层含有聚乙烯吡咯烷酮的胶水来增加石墨烯与目标基底的附着力,随着聚乙烯吡咯烷酮的含量的增加,石墨烯与基底之间的附着力增加。聚乙烯吡咯烷酮占胶的重量比为1%~50%,优选20%。本发明采用在目标基底上涂布一层含有聚乙烯吡咯烷酮的胶水,形成一层薄薄的胶膜,在胶膜表面转移单层石墨烯,得到石墨烯复合膜,石墨烯与目标基底的附着力会有较大的提升,并且石墨烯膜的方阻也有所下降,可降至180Ω/□,用剥离力为5N的胶带粘在石墨烯表面撕扯,石墨烯没有损坏。
附图说明
图1为本发明实施例1的方法流程示意图
其中,1-石墨烯,2-金属衬底,3-胶膜,4-基底膜,5-含聚乙烯吡咯烷烔的胶膜。
具体实施方式
以下结合附图对本发明的优选实施例进行说明,应当理解,此处所描述的优选实施例仅用于说明和解释本发明,并不用于限定本发明。
以下实施例和对比例中,为了对比效果,基底膜均采用PET,金属衬底均采用铜箔,胶膜均采用PET硅胶保护膜。实际上,所述基底膜可以有很多选择,本领域内公知的基底膜均可,如PET、PC、PMMA、PP、PE、PEN、Si/SiO2或玻璃等;金属衬底可以采用常规的铜箔、镍箔等,但本发明不限于这些选择,本领域技术人员公知的可做为金属衬底的材料均可实现本发明技术;所述胶膜同样可以有多种选择,如市售PET硅胶保护膜、PET亚克力保护膜、PC硅胶保护膜、PC亚克力保护膜、PMMA硅胶保护膜、PMMA亚克力保护膜,PP硅胶保护膜、PP亚克力保护膜、PE硅胶保护膜、PE亚克力保护膜。
实施例1:
石墨烯薄膜的制备,参见图1,1-石墨烯,2-金属衬底,3-胶膜,4-基底膜,5-含聚乙烯吡咯烷烔的胶膜,包括如下步骤:
1)采用常规气相沉积法在金属衬底上生长石墨烯后,再将生长有石墨烯的金属衬底展形,得到金属衬底/石墨烯;
2)辊压的方式将金属衬底/石墨烯中的石墨烯一面与胶膜带的一面贴合在一起,形成胶膜/石墨烯/金属衬底的结构;
3)将胶膜/石墨烯/金属衬底置于盐酸和双氧水的混合溶液中刻蚀,直至金属衬底完全去除,最后用去离子水清洗,热风吹干,得到胶膜/石墨烯;
4)在基底膜上涂布一层含1%的聚乙烯吡咯烷酮的UV固化胶水,涂布厚度为500nm,固化,得到胶膜/基底膜,作为石墨烯薄膜的目标基底;
5)将步骤3)得到的胶膜/石墨烯其中石墨烯的一面与步骤4)得到的胶膜/基底膜其中胶膜的一面经过压辊贴合在一起,得到胶膜/石墨烯/胶膜/基底膜的复合膜;
6)揭除胶膜得到石墨烯/胶膜/基底膜的复合膜。
经测试,石墨烯/胶膜/基底膜的复合膜的方阻为210Ω/□,用剥离力为1N的胶带粘在石墨烯表面撕扯,石墨烯没有损坏。
实施例2:
石墨烯薄膜的制备,参见图1,1-石墨烯,2-金属衬底,3-胶膜,4-基底膜,5-含聚乙烯吡咯烷烔的胶膜,包括如下步骤:
1)采用常规气相沉积法在金属衬底上生长石墨烯后,再将生长有石墨烯的金属衬底展形,得到金属衬底/石墨烯;
2)辊压的方式将金属衬底/石墨烯中的石墨烯一面与胶膜带的一面贴合在一起,形成胶膜/石墨烯/金属衬底的结构;
3)将胶膜/石墨烯/金属衬底置于盐酸和双氧水的混合溶液中刻蚀,直至金属衬底完全去除,最后用去离子水清洗,热风吹干,得到胶膜/石墨烯;
4)在基底膜上涂布一层含10%的聚乙烯吡咯烷酮的热固化胶水,涂布厚度为10μm,固化后得到胶膜/基底膜,作为石墨烯薄膜的目标基底;
5)将步骤3)得到的胶膜/石墨烯其中石墨烯的一面与步骤4)得到的胶膜/基底膜其中胶膜的一面经过压辊贴合在一起,得到胶膜/石墨烯/胶膜/基底膜的复合膜;
6)揭除胶膜得到石墨烯/胶膜/基底膜的复合膜。
经测试,石墨烯/胶膜/基底膜的方阻为200Ω/□,用剥离力为3N的胶带粘在石墨烯表面撕扯,石墨烯没有损坏。
实施例3:
石墨烯薄膜的制备,参见图1,1-石墨烯,2-金属衬底,3-胶膜,4-基底膜,5-含聚乙烯吡咯烷烔的胶膜,包括如下步骤:
1)采用常规气相沉积法在金属衬底上生长石墨烯后,再将生长有石墨烯的金属衬底展形,得到金属衬底/石墨烯;
2)辊压的方式将金属衬底/石墨烯中的石墨烯一面与胶膜带的一面贴合在一起,形成胶膜/石墨烯/金属衬底的结构;
3)将胶膜/石墨烯/金属衬底置于盐酸和双氧水的混合溶液中刻蚀,直至金属衬底完全去除,最后用去离子水清洗,热风吹干,得到胶膜/石墨烯;
4)在目标基底上涂布一层含20%的聚乙烯吡咯烷酮的热固化胶水,涂布厚度为3μm,固化后得到胶膜/基底膜,作为石墨烯薄膜的目标基底;
5)将步骤3)得到的胶膜/石墨烯其中石墨烯的一面与步骤4)得到的胶膜/基底膜其中胶膜的一面经过压辊贴合在一起,得到胶膜/石墨烯/胶膜/基底膜的复合膜;
6)揭除胶膜得到石墨烯/胶膜/基底膜的复合膜。
经测试,石墨烯/胶膜/基底膜的方阻为180Ω/□,用剥离力为5N的胶带粘在石墨烯表面撕扯,石墨烯没有损坏。
实施例4:
石墨烯薄膜的制备,参见图1,1-石墨烯,2-金属衬底,3-胶膜,4-基底膜,5-含聚乙烯吡咯烷烔的胶膜,包括如下步骤:
1)采用常规气相沉积法在金属衬底上生长石墨烯后,再将生长有石墨烯的金属衬底展形,得到金属衬底/石墨烯;
2)辊压的方式将金属衬底/石墨烯中的石墨烯一面与胶膜带的一面贴合在一起,形成胶膜/石墨烯/金属衬底的结构;
3)将胶膜/石墨烯/金属衬底置于盐酸和双氧水的混合溶液中刻蚀,直至金属衬底完全去除,最后用去离子水清洗,热风吹干,得到胶膜/石墨烯;
4)在目标基底上涂布一层含1%的聚乙烯吡咯烷酮的热固化胶水,涂布厚度为5μm,固化后得到胶膜/基底膜,作为石墨烯薄膜的目标基底;
5)将步骤3)得到的胶膜/石墨烯其中石墨烯的一面与步骤4)得到的胶膜/基底膜其中胶膜的一面经过压辊贴合在一起,得到胶膜/石墨烯/胶膜/基底膜的复合膜;
6)揭除胶膜得到石墨烯/胶膜/基底膜的复合膜。
经测试,石墨烯/胶膜/基底膜的方阻为220Ω/□,用剥离力为5N的胶带粘在石墨烯表面撕扯,石墨烯没有损坏。
实施例6:
石墨烯薄膜的制备,参见图1,1-石墨烯,2-金属衬底,3-胶膜,4-基底膜,5-含聚乙烯吡咯烷烔的胶膜,包括如下步骤:
1)采用常规气相沉积法在金属衬底上生长石墨烯后,再将生长有石墨烯的金属衬底展形,得到金属衬底/石墨烯;
2)辊压的方式将金属衬底/石墨烯中的石墨烯一面与胶膜带的一面贴合在一起,形成胶膜/石墨烯/金属衬底的结构;
3)将胶膜/石墨烯/金属衬底置于盐酸和双氧水的混合溶液中刻蚀,直至金属衬底完全去除,最后用去离子水清洗,热风吹干,得到胶膜/石墨烯;
4)在目标基底上涂布一层含50%的聚乙烯吡咯烷酮的热固化胶水,涂布厚度为10nm,固化后得到胶膜/基底膜,作为石墨烯薄膜的目标基底;
5)将步骤3)得到的胶膜/石墨烯其中石墨烯的一面与步骤4)得到的胶膜/基底膜其中胶膜的一面经过压辊贴合在一起,得到胶膜/石墨烯/胶膜/基底膜的复合膜;
6)揭除胶膜得到石墨烯/胶膜/基底膜的复合膜。
经测试,石墨烯/胶膜/基底膜的方阻为210Ω/□,用剥离力为5N的胶带粘在石墨烯表面撕扯,石墨烯没有损坏。
实施例7:
石墨烯薄膜的制备,参见图1,1-石墨烯,2-金属衬底,3-胶膜,4-基底膜,5-含聚乙烯吡咯烷烔的胶膜,包括如下步骤:
1)采用常规气相沉积法在金属衬底上生长石墨烯后,再将生长有石墨烯的金属衬底展形,得到金属衬底/石墨烯;
2)辊压的方式将金属衬底/石墨烯中的石墨烯一面与胶膜带的一面贴合在一起,形成胶膜/石墨烯/金属衬底的结构;
3)将胶膜/石墨烯/金属衬底置于盐酸和双氧水的混合溶液中刻蚀,直至金属衬底完全去除,最后用去离子水清洗,热风吹干,得到胶膜/石墨烯;
4)在目标基底上涂布一层含30%的聚乙烯吡咯烷酮的热固化胶水,涂布厚度为1.5μm,固化后得到胶膜/基底膜,作为石墨烯薄膜的目标基底;
5)将步骤3)得到的胶膜/石墨烯其中石墨烯的一面与步骤4)得到的胶膜/基底膜其中胶膜的一面经过压辊贴合在一起,得到胶膜/石墨烯/胶膜/基底膜的复合膜;
6)揭除胶膜得到石墨烯/胶膜/基底膜的复合膜。
经测试,石墨烯/胶膜/基底膜的方阻为200Ω/□,用剥离力为5N的胶带粘在石墨烯表面撕扯,石墨烯没有损坏。
对比实施例
石墨烯薄膜的制备:
1)采用常规气相沉积法在金属衬底上生长石墨烯后,再将生长有石墨烯的金属衬底展形,得到金属衬底/石墨烯。
2)辊压的方式将金属衬底/石墨烯中的石墨烯一面与胶膜带的一面贴合在一起,形成胶膜/石墨烯/金属衬底的结构。
3)将胶膜/石墨烯/金属衬底置于盐酸和双氧水的混合溶液中刻蚀,直至金属衬底完全去除,最后用去离子水清洗,热风吹干,得到胶膜/石墨烯。
4)将步骤3)得到的胶膜/石墨烯其中石墨烯的一面与基底膜经过压辊贴合在一起,得到胶膜/石墨烯/基底膜的复合膜;
(6)揭除胶膜得到石墨烯/基底膜的复合膜,方阻为250Ω/□,用剥离力为1N的胶带粘在石墨烯表面撕扯,石墨烯破损严重。
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,尽管参照前述实施例对本发明进行了详细的说明,对于本领域的技术人员来说,其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。

Claims (10)

1.一种石墨烯薄膜的目标基底,其特征在于:为基底膜/胶膜的复合结构,所述胶膜内含有聚乙烯吡咯烷酮。
2.根据权利要求1所述的石墨烯薄膜的目标基底,其特征在于:所述基底膜采用PET、PC、PMMA、PP、PE、PEN、Si/SiO2或玻璃。
3.根据权利要求1所述的石墨烯膜的目标基底,其特征在于:所述胶膜的厚度为10nm-20μm。
4.根据权利要求1-3任一项所述的石墨烯膜的目标基底,其特征在于:所述胶膜中含有1-50%的聚乙烯吡咯烷酮;优选地,所述胶膜中含有20%的聚乙烯吡咯烷酮。
5.根据权利要求1-4任一项所述的石墨烯膜的目标基底的制备方法,其特征在于:将基底膜上涂布一层含有聚乙烯吡咯烷酮的溶液,固化,形成基底膜/胶膜的复合结构;优选地,所述聚乙烯吡咯烷酮溶液的溶剂为可溶解聚乙烯吡咯烷酮的有机溶剂。
6.根据权利要求5所述的石墨烯膜的目标基底的制备方法,其特征在于:所述聚乙烯吡咯烷酮溶液中含有1-50%的聚乙烯吡咯烷酮,优选含有20%的聚乙烯吡咯烷酮。
7.根据权利要求5所述的石墨烯膜的目标基底的制备方法,其特征在于:所述有机溶剂为热固化胶水或UV固化胶水。
8.根据权利要求5所述的石墨烯膜的目标基底的制备方法,其特征在于:所述涂布聚乙烯吡咯烷酮溶液的厚度为10nm-10μm,优选500nm-10μm,最佳为3μm。
9.一种石墨烯薄膜的制备方法,其特征在于:采用权利要求5-8任一项所述的方法制得的基底膜/胶膜作为目标基底,包括如下步骤:
1)将胶膜其中带胶的一面与生长有石墨烯的金属衬底的石墨烯一面贴合在一起;
2)去除金属衬底,得到胶膜/石墨烯的结构;
3)将步骤2)得到的胶膜/石墨烯复合膜的石墨烯一面与胶膜/基底膜的胶面贴合在一起,形成胶膜/石墨烯/胶膜/基底膜的结构;
6)揭除表面的胶膜,得到石墨烯/胶膜/基底膜的复合结构。
10.根据权利要求9所述的石墨烯薄膜的制备方法,其特征在于:所述步骤1)和所述步骤3)中,采用辊压的方式进行贴合作业。
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