CN106505027A - 卡盘工作台 - Google Patents

卡盘工作台 Download PDF

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CN106505027A
CN106505027A CN201610791367.9A CN201610791367A CN106505027A CN 106505027 A CN106505027 A CN 106505027A CN 201610791367 A CN201610791367 A CN 201610791367A CN 106505027 A CN106505027 A CN 106505027A
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chip
chuck table
remaining area
salient point
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CN106505027B (zh
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富樫谦
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Disco Corp
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    • H—ELECTRICITY
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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Abstract

提供卡盘工作台，在对正面上形成有多个电极凸点的半导体晶片的正面侧进行吸引保持的情况下，能够防止负压的泄漏而对晶片进行可靠地吸引保持。卡盘工作台对晶片的正面进行吸引而保持该晶片，在该晶片的正面上具有器件区域和围绕该器件区域的外周剩余区域，在该器件区域中，在呈格子状划分的多个区域内分别形成有具有电极凸点的器件，其特征在于，该卡盘工作台具有：保持面，其与该电极凸点对置并对晶片的该器件区域进行吸引保持；以及外周剩余区域支承部，其围绕该保持面并借助比该保持面突出的弹性部件对晶片的该外周剩余区域进行支承，该外周剩余区域支承部与该电极凸点的高度对应而从该保持面突出。

Description

卡盘工作台
技术领域
本发明涉及激光加工装置等加工装置的卡盘工作台。
背景技术
关于半导体晶片或在蓝宝石、SiC、GaN等外延基板上形成有发光层的光器件晶片等，近年来开始使用如下的加工方法：将聚光点定位在晶片内部而照射对于晶片具有透过性的波长的激光束而在晶片内部形成改质层，接着，对晶片施加外力而以改质层为断裂起点将晶片分割成各个器件芯片(例如，参照日本特许第3408805号公报)。
在该加工方法中，以在激光束的照射面侧不形成使激光束的能量衰减的材料(例如，构成器件的形成各种图案的材料)为条件。因此，对于在正面上形成有多个器件的晶片，一般实施从没有器件的背面侧照射激光束并在内部形成改质层的加工。
为了从晶片的背面侧照射激光束，公知如下的加工方法：将形成有器件的晶片的正面侧保持在卡盘工作台上，但为了防止卡盘工作台的保持面与器件直接接触而导致器件破损，利用片状部件来覆盖保持面(参照日本特开2013-229403号公报)。
专利文献1：日本特许第3408805号公报
专利文献2：日本特开2013-229403号公报
关于倒装芯片键合类型的半导体器件，有时在器件的电极上形成有电极凸点，在半导体晶片的正面上并排形成有多个电极凸点。
在这样的半导体器件中，存在如下课题：由于电极凸点是突出的，所以当将晶片的正面吸引保持在卡盘工作台上时，会发生负压的泄漏而不能充分地确保负压，吸引保持不完全。
发明内容
本发明是鉴于这样的点而完成的，其目的在于提供一种卡盘工作台，在对正面上形成有多个电极凸点的半导体晶片的正面侧进行吸引保持的情况下，防止负压的泄漏而对晶片进行可靠地吸引保持。
根据本发明，提供一种卡盘工作台，其对晶片的正面进行吸引而保持该晶片，该晶片在正面具有器件区域和围绕该器件区域的外周剩余区域，在该器件区域中，在呈格子状划分的多个区域内分别形成有具有电极凸点的器件，该卡盘工作台的特征在于，具有：保持面，其与该电极凸点对置并对晶片的该器件区域进行吸引保持；以及外周剩余区域支承部，其围绕该保持面，并借助比该保持面突出的弹性部件对晶片的该外周剩余区域进行支承，该外周剩余区域支承部与该电极凸点的高度对应而从该保持面突出。
优选卡盘工作台还具有：片状部件，其直径比晶片大且具有挠性和通气性，并且该片状部件覆盖该保持面和该外周剩余区域支承部而对所吸引保持的晶片的正面进行保护；以及片状部件固定部，其将该片状部件的外周按压在比该外周剩余区域支承部靠下方的位置而进行固定。
优选卡盘工作台还具有高度调整构件，其对该外周剩余区域支承部的从该保持面起的突出量进行调整。
通过本发明的卡盘工作台，一边利用保持面对晶片的电极凸点侧进行保持一边利用与电极凸点的高度对应而从保持面突出的外周剩余区域支承部对晶片与保持面之间进行密封，能够充分地确保负压，所以能够从电极凸点侧对具有多个电极凸点的晶片进行吸引保持。
并且，在使用片状部件来保护晶片正面的情况下，也能够利用片状部件固定部来应对片状部件。另外，即使电极凸点的高度根据器件的种类而变更，也能够通过调整构件对外周剩余区域支承部的高度进行调整，因此不需要准备其他的卡盘工作台。
附图说明
图1是本发明的卡盘工作台所能够应用的激光加工装置的立体图。
图2是各器件具有多个电极凸点的晶片的正面侧立体图。
图3是在外周部粘接在环状框架上的划片带上粘接了晶片的背面的形态的框架单元的立体图。
图4是利用本发明实施方式的卡盘工作台对框架单元的电极凸点侧进行了吸引保持的状态的剖视图。
图5是图4所示的卡盘工作台的局部放大剖视图。
标号说明
2：激光加工装置；11：半导体晶片；15：器件；17：电极凸点；19：器件区域；21：外周剩余区域；24：卡盘工作台；42：框体；44：吸引保持部；44a：保持面；48：片状部件；50：O形环固定部；54：O形环；56：高度调整构件；60：片状部件固定部。
具体实施方式
以下，参照附图对本发明的实施方式进行详细地说明。图1是示出具有本发明实施方式的卡盘工作台的激光加工装置2的概略结构图。激光加工装置2包含搭载在静止基台4上的在Y轴方向上伸长的一对导轨6。
Y轴移动块8通过由滚珠丝杠10和脉冲电动机12构成的Y轴进给机构(Y轴进给构件)14而在分度进给方向即Y轴方向上移动。在Y轴移动块8上固定有在X轴方向上伸长的一对导轨16。
X轴移动块18通过由滚珠丝杠20和脉冲电动机22构成的X轴进给机构(X轴进给构件)28而被引导在导轨16上，在加工进给方向即X轴方向上移动。
卡盘工作台24借助圆筒状支承部件30而搭载在X轴移动块18上。在卡盘工作台24上配设有多个(在本实施方式中为4个)夹具26，该夹具26夹紧图3所示的环状框架F。
在基座4的后方竖立设置有柱32。激光束照射单元34的外壳36固定在柱32上。在外壳36中收纳有激光束振荡构件，在该激光束振荡构件中包含有YAG激光振荡器等，在外壳36的前端安装有将激光束会聚在待加工的晶片上的聚光器(激光头)38。
在激光束照射单元34的外壳36的前端安装有对保持在卡盘工作台24上的晶片11进行拍摄的拍摄单元40。拍摄单元具有与红外光对应的拍摄元件。聚光器38和拍摄单元40整齐排列于X轴方向而配设。
参照图2，示出了适合利用本发明实施方式的卡盘工作台来进行吸引保持的半导体晶片(以下，有时简称为晶片)11的正面侧立体图。
在半导体晶片11的正面11a上呈格子状形成有多条分割预定线(间隔道)13，在由垂直的分割预定线13划分的各区域内形成有IC、LSI等器件15。
晶片11的各器件15具有多个电极凸点17，在该晶片11的正面上分别具有器件区域19和围绕着器件区域19的外周剩余区域21，其中，在器件区域19内形成有具有多个电极凸点17的多个器件15。
如图3所示，晶片11被粘接在作为粘合带的划片带T上，划片带T的外周部粘接在环状框架F上。即，处理成隔着划片带T将晶片11固定在环状框架F的开口处的框架单元23的形态。划片带T是在由聚烯烃等树脂构成的基材上涂布粘合层而形成的。
接着，参照图4和图5对本发明实施方式的卡盘工作台24进行详细地说明。图4是将晶片11吸引保持在卡盘工作台24上，并隔着粘接在晶片的背面的划片带T对晶片11照射激光束，在晶片11的内部形成改质层25的状态的剖视图。图5是图4的局部放大剖视图。
搭载在圆筒状支承部件30上的卡盘工作台24包含有如下部件：框体42，其由SUS等金属形成；以及吸引保持部44，其嵌合在框体42的凹部内并由多孔陶瓷材料等形成。在框体42内形成有与吸引保持部44连通的吸引路46，吸引路46的另一端经由电磁切换阀选择性地与未图示的吸引源连接。
在图4中，将框架单元23的正反反转，将晶片11的形成有电极凸点17的正面11a侧隔着片状部件48吸引保持在保持面44a上，并且利用夹具26对框架单元23的环状框架F进行夹紧而固定。
吸引保持部46的正面即保持面44a与晶片11的电极凸点17对置，对搭载在卡盘工作台24上的晶片11的器件区域19进行吸引保持。晶片11的外周剩余区域21与作为外周剩余区域支承部的O形环54抵接而被支承，该O形环54与电极凸点17的高度对应而从保持面44a突出配设。
O形环54插入到形成于环状的O形环固定部50的环状的切口52中而被固定。由O形环固定部50和O形环54构成高度调整构件56。O形环固定部50借助在圆周方向上以规定的间隔分开的多个螺丝58而固定在卡盘工作台24的框体42上。
卡盘工作台24的保持面44a和作为外周剩余区域支承部的O形环54被直径比晶片11的大且具有挠性和通气性的片状部件48覆盖。通过该片状部件48来保护晶片11的正面11a。
片状部件48的外周被O形环固定部50和片状部件固定部60夹住而固定。片状部件固定部60为环状，借助在圆周方向上以规定的间隔分开的多个螺丝62而固定在卡盘工作台24的框体42上。片状部件固定部60将片状部件48的外周按压在比作为外周剩余区域支承部的O形环54靠下方的位置而与O形环固定部50共同工作而将片状部件48固定。
如上述的那样，由O形环支承部50和O形环54来构成高度调整构件56，并能够根据电极凸点17的高度对O形环54的直径进行变更而对O形环54从保持面44a起的突出量进行调整。电极凸点17的高度为大约50～200μm左右。并且，也可以使O形环支承部根据O形环的大小来进行变更。
通过上述的实施方式的卡盘工作台24，利用保持面44a对晶片11的电极凸点17侧进行保持，利用作为外周剩余区域支承部的O形环54对外周剩余区域21进行支承，由此，由于利用O形环54对晶片11与保持面44a之间进行密封，所以能够充分地确保负压，从而能够从电极凸点17侧对具有电极凸点17的晶片11进行保持。
并且，由于使用片状部件48来保护晶片11的正面，所以在对晶片11进行吸引保持时能够充分地保护晶片11的正面11a。进而，即使电极凸点17的高度根据器件的种类而变更，也能够通过对O形环54进行变更而对外周剩余区域支承部的高度进行调整，因此不需要准备其他的卡盘工作台。

Claims (3)

1.一种卡盘工作台，其对晶片的正面进行吸引而保持该晶片，该晶片在正面具有器件区域和围绕该器件区域的外周剩余区域，在该器件区域中，在呈格子状划分的多个区域内分别形成有具有电极凸点的器件，该卡盘工作台的特征在于，具有：
保持面，其与该电极凸点对置并对晶片的该器件区域进行吸引保持；以及
外周剩余区域支承部，其围绕该保持面，并借助比该保持面突出的弹性部件对晶片的该外周剩余区域进行支承，
该外周剩余区域支承部与该电极凸点的高度对应而从该保持面突出。
2.根据权利要求1所述的卡盘工作台，其中，
该卡盘工作台还具有：
片状部件，其直径比晶片大且具有挠性和通气性，并且该片状部件覆盖该保持面和该外周剩余区域支承部而对所吸引保持的晶片的正面进行保护；以及
片状部件固定部，其将该片状部件的外周按压在比该外周剩余区域支承部靠下方的位置而进行固定。
3.根据权利要求1或2所述的卡盘工作台，其中，
该卡盘工作台还具有高度调整构件，其对该外周剩余区域支承部的从该保持面起的突出量进行调整。
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