CN106501615A - A kind of MEMS electrode formula low conductivity sensor and its measuring method - Google Patents
A kind of MEMS electrode formula low conductivity sensor and its measuring method Download PDFInfo
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- CN106501615A CN106501615A CN201611026949.4A CN201611026949A CN106501615A CN 106501615 A CN106501615 A CN 106501615A CN 201611026949 A CN201611026949 A CN 201611026949A CN 106501615 A CN106501615 A CN 106501615A
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/22—Measuring resistance of fluids
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Abstract
The invention discloses a kind of MEMS electrode formula low conductivity sensor and its measuring method, belong to microelectromechanical systems manufacture and field of water quality detection.The sensor is made up of dielectric substrate, three planar rectangular electrodes and two pairs of plane interdigital electrodes, level is arranged all electrodes successively, and symmetrical distribution, three planar rectangular electrode sizes are equal, are arranged mutually parallel in two ends and middle, and as galvanic electrode, for applying pumping signal, two pairs of plane interdigital electrodes are arranged mutually parallel between two planar rectangular electrodes to equal in magnitude, and as voltage electrode, for detecting response signal.The sensor construction that the present invention is provided is simple, and easy to operate, based on MEMS process technologies, process is simple is with low cost, compact, highly versatile, and reliability is high, it is adaptable to the conductivity measurement of low concentration water body.
Description
Technical field
The present invention relates to a kind of MEMS electrode formula low conductivity sensor and its measuring method, are related to microelectromechanical systems
Manufacture and field of water quality detection.
Background technology
Water quality detection is closely bound up with daily life and production, and electrical conductivity is highly important measurement ginseng in water quality detection
In the relatively low various water bodys of electrical conductivity such as number, shallow sea, river mouth, reservoir, generally require to carry out long-term water quality monitoring in real time.Existing
In technology, using the conductivity sensor of traditional mechanical processing and manufacturing, machining accuracy is low, difficulty of processing is big, high processing costs, no
Be suitable for high-volume manufacture, and adopt MEMS technology manufacture conductivity sensor small volume, low in energy consumption, low cost, can high-volume
Production, is the developing direction of conductivity sensor.
Conductivity sensor is broadly divided into two kinds of electric pole type and vicariouss, and wherein electric pole type conductivity sensor is due to follow-up
Process circuit is simple, certainty of measurement is high, easy to use, is widely used in water quality detection.With other electric pole types MEMS electrical conductivity
Sensor is compared, and the MEMS conductivity sensors being made up of a pair of planar interdigital electrode, its cell constant of conductometric vessel are relatively low, especially fit
Share in the water quality detection of low conductivity water body, but the interdigital electrode of this conductivity sensor is both galvanic electrode and electric
Piezoelectricity pole, in measurement process, can produce polarizing voltage on water body to be measured and the contact surface of electrode, produce measurement result certain
Error, limit its application in water quality detection.
Content of the invention
The technical problem to be solved is to provide a kind of MEMS electrode formula low conductivity sensor and its measurement side
Method, the present invention overcome the shortcomings of traditional mechanical process technology, manufacture conductivity sensor using MEMS process technologies；Overcome simultaneously
There is polarity effect when low conductivity water body is detected in existing MEMS plane interdigital electrode formulas conductivity sensor, produce measurement
Error, the not high deficiency of certainty of measurement；The conductivity sensor simple structure of the present invention, compact is easy to operate, cost compared with
Low, measuring speed is fast, and certainty of measurement is high.
The present invention is employed the following technical solutions for solving above-mentioned technical problem：
On the one hand, the present invention provides a kind of MEMS electrode formula low conductivity sensor, including dielectric substrate and is fixed on
Three planar rectangular electrodes of dielectric substrate upper surface and two pairs of plane interdigital electrodes pair, wherein：
Three planar rectangular electrodes include equal-sized first planar rectangular electrode, the second planar rectangular electrode and
3rd planar rectangular electrode；Two pairs of plane interdigital electrodes to include equal-sized first plane interdigital electrode to and second
Plane interdigital electrode pair；
All electrodes are arranged successively in the upper surface level of dielectric substrate, are followed successively by the first planar rectangular electricity from left to right
Pole, the first plane interdigital electrode to, the second planar rectangular electrode, the second plane interdigital electrode to, the 3rd planar rectangular electrode, and
Symmetrical distribution；There is interval between electrode and electrode and be parallel to each other；
Three planar rectangular electrodes are galvanic electrode, and one end of each planar rectangular electrode respectively carries a metal
Anchor area, for applying pumping signal；
Two pairs of plane interdigital electrodes are to for voltage electrode, the side of each plane interdigital electrode respectively carries a gold
Shu Mao areas, for detecting response signal.
Used as the further prioritization scheme of the present invention, the dielectric substrate is made up of silica-base material, the upper end of dielectric substrate
Face is silicon dioxide insulating layer.
Used as the further prioritization scheme of the present invention, all electrodes and its metal anchors area are passed through by the nickel material of surface gold-plating
Metal micro fabrication is made.
As the further prioritization scheme of the present invention, the plane interdigital electrode to include two interdigital interlaced flat
Face interdigital electrode.
On the other hand, the present invention also provides a kind of using above-mentioned MEMS electrode formula low conductivity sensor measurement water body conductance
The method of rate, it is characterised in that comprise the following steps：
(1) apply pumping signal between galvanic electrode, specially：By the first planar rectangular electrode and the 3rd planar rectangular
Electrode is grounded, incoming transport pumping signal I on the second planar rectangular electrode；
(2) response signal is detected between voltage electrode, specially：Two pair plane interdigital electrode centering two is measured respectively
Voltage V between interdigital electrode1And V2；
(3) electrical conductivity is calculated, specially：The electrical conductivity of water bodyIn formula, K is cell constant of conductometric vessel.
As the further prioritization scheme of the present invention, V is kept by amplifier feedback circuit1And V2Amplitude.
The present invention adopts above technical scheme compared with prior art, with following technique effect：The one of present invention offer
MEMS electrode formula low conductivity sensor is planted, with simple structure, high easy to operate, certainty of measurement, process is simple, small volume
Ingeniously, with low cost, high reliability.
Description of the drawings
Fig. 1 is the overlooking structure figure of MEMS electrode formula low conductivity sensor.
In figure, 1- dielectric substrates, 2- planar rectangular electrodes, 3- plane interdigital electrodes pair, 4- planar rectangular electrodes, 5- planes
Interdigital electrode pair, 6- planar rectangular electrodes, 7- metal anchors area, 8- metal anchors area, 9- metal anchors area, 10- metal anchors area, 11- gold
Shu Mao areas, 12- metal anchors area, 13- metal anchors area, 301- plane interdigital electrodes, 302- plane interdigital electrodes, 501- planes are interdigital
Electrode, 502- plane interdigital electrodes.
Specific embodiment
Below in conjunction with the accompanying drawings technical scheme is described in further detail：
A kind of overlooking structure figure of the MEMS electrode formula low conductivity sensor of the present invention, as shown in Figure 1, including insulation
1, three planar rectangular electrodes of substrate and two pairs of plane interdigital electrodes pair.Wherein, three planar rectangular electrodes is equal in magnitude, point
Wei not the first planar rectangular electrode 2, the second planar rectangular electrode 4 and the 3rd planar rectangular electrode 6；Two pairs of plane interdigital electrodes pair
Equal in magnitude, respectively the first plane interdigital electrode to 3 and second plane interdigital electrode to 5, the first plane interdigital electrode is to 3
It is made up of plane interdigital electrode 301, plane interdigital electrode 302, the first plane interdigital electrode is to 5 by plane interdigital electrode 501, flat
Face interdigital electrode 502 is constituted.
All electrodes are each attached to the upper surface of dielectric substrate 1, and level is arranged successively, are spaced one section between electrode and electrode
Distance, is parallel to each other and symmetrical distribution, and the arrangement of electrode is followed successively by from left to right：First planar rectangular electrode 2, first
Plane interdigital electrode is to the 3, second planar rectangular electrode 4, the second plane interdigital electrode to the 5, the 3rd planar rectangular electrode 6.
Three planar rectangular electrodes are galvanic electrode, and one end of each planar rectangular electrode respectively carries metal anchors
Area, respectively the metal anchors area 7 of the first planar rectangular electrode 2, the metal anchors area 10 of the second planar rectangular electrode 4 and the 3rd plane
The metal anchors area 13 of rectangular electrode 6, for applying pumping signal.
Two pairs of plane interdigital electrodes are to for voltage electrode, the side of each plane interdigital electrode respectively carries metal anchors
The metal anchors area 8 in area, respectively plane interdigital electrode 301, the metal anchors area 9 of plane interdigital electrode 302, plane interdigital electrode
501 metal anchors area 11, the metal anchors area 12 of plane interdigital electrode 502, for detecting response signal.
Dielectric substrate 1 is made up of silica-base material, and the upper surface of dielectric substrate 1 is silicon dioxide insulating layer.All electrodes 2,
3rd, 4,5,6 and its metal anchors area 7,8,9,10,11,12,13 made through metal micro fabrication by the nickel material of surface gold-plating.
The method that the present invention measures water body electrical conductivity using above-mentioned MEMS electrode formula low conductivity sensor, including following step
Suddenly：
(1) in galvanic electrode 2, apply pumping signal between 4,6, specific practice is：Gold by the first planar rectangular electrode 2
The metal anchors area 13 of Shu Mao areas 7 and the 3rd planar rectangular electrode 6 is grounded, in the metal anchors area 13 of the second planar rectangular electrode 4
Incoming transport pumping signal I, between the second planar rectangular electrode 4 and the first planar rectangular electrode 2, the second planar rectangular electrode
4 and the 3rd generate AC field between planar rectangular electrode 6 simultaneously.Due to the first planar rectangular electrode 2 and the 3rd planar rectangular
Electrode 6 is all grounded, and the water body of sensor internal is shielded, and the electromagnetic interference of external environment condition cannot have influence on sensor internal
Tested water body；
(2) in voltage electrode 301, detect response signal between 302,501,502, specific practice is：Two pairs are measured respectively
Plane interdigital electrode is to the voltage V between 3,51And V2, i.e., the alternating electric field that receives in measurement plane interdigital electrode 301,302
Voltage drop V1, while the voltage drop V of the alternating electric field received in measurement plane interdigital electrode 501,5022, and pass through amplifier
Feedback circuit keeps the amplitude of the two voltages；
(3) Conductivity Results are calculated, and specific way is：Sensor with the second planar rectangular electrode 4 be axis of symmetry in a left side
Right symmetrical, therefore, the voltage drop V of the alternating electric field received in plane interdigital electrode 301,3021With plane interdigital electrode 501,
The voltage drop V of the alternating electric field received on 5022Equal in magnitude, in order to avoid the asymmetric error that machining accuracy is caused, can use
Voltage parameter of the meansigma methodss of two voltage drops as tested water body, i.e. V=(V1+V2)/2, using electrical conductivity with apply electric current,
Relational expression between measurement voltage, obtains the electrical conductivity of water body, and formula is as follows：
In formula, K is cell constant of conductometric vessel.
A kind of MEMS electrode formula low conductivity sensor provided by the present invention, overcomes traditional mechanical process technology
Deficiency, manufactures conductivity sensor using MEMS process technologies, small volume, low in energy consumption, low cost, can be mass-produced, while
Overcome existing MEMS planes interdigital electrode formula conductivity sensor when low conductivity water body is detected, there is polarity effect, measure
The not high deficiency of precision, voltage electrode is separated with galvanic electrode, eliminates the impact of polarizing voltage, and lateral electrode is grounded,
Avoid the electromagnetic interference of external environment condition.The MEMS electrode formula low conductivity sensor has simple structure, easy to operate, measurement essence
Degree height, process is simple, high reliability.
The above, the only specific embodiment in the present invention, but protection scope of the present invention is not limited thereto, and appoints
What be familiar with the people of the technology disclosed herein technical scope in, it will be appreciated that the conversion that expects or replacement, should all cover
The present invention include within the scope of, therefore, protection scope of the present invention should be defined by the protection domain of claims.
Claims (6)
1. a kind of MEMS electrode formula low conductivity sensor, it is characterised in that including dielectric substrate and be fixed on dielectric substrate
Three planar rectangular electrodes of upper surface and two pairs of plane interdigital electrodes pair, wherein：
Three planar rectangular electrodes include equal-sized first planar rectangular electrode, the second planar rectangular electrode and the 3rd
Planar rectangular electrode；Two pairs of plane interdigital electrodes to include equal-sized first plane interdigital electrode to and the second plane
Interdigital electrode pair；
All electrodes are arranged successively in the upper surface level of dielectric substrate, be followed successively by from left to right the first planar rectangular electrode,
One plane interdigital electrode to, the second planar rectangular electrode, the second plane interdigital electrode to, the 3rd planar rectangular electrode, and in a left side
Right symmetrical；There is interval between electrode and electrode and be parallel to each other；
Three planar rectangular electrodes are galvanic electrode, and one end of each planar rectangular electrode respectively carries metal anchors
Area, for applying pumping signal；
Two pairs of plane interdigital electrodes are to for voltage electrode, the side of each plane interdigital electrode respectively carries metal anchors
Area, for detecting response signal.
2. a kind of MEMS electrode formula low conductivity sensor according to claim 1, it is characterised in that the dielectric substrate
It is made up of silica-base material, the upper surface of dielectric substrate is silicon dioxide insulating layer.
3. a kind of MEMS electrode formula low conductivity sensor according to claim 1, it is characterised in that all electrodes and its
Made through metal micro fabrication by the nickel material of surface gold-plating in metal anchors area.
4. a kind of MEMS electrode formula low conductivity sensor according to claim 1, it is characterised in that the plane is interdigital
Electrode pair includes two interdigital interlaced plane interdigital electrodes.
5. a kind of MEMS electrode formula low conductivity sensor using as described in arbitrary in Claims 1-4 measures water body conductance
The method of rate, it is characterised in that comprise the following steps：
(1) apply pumping signal between galvanic electrode, specially：By the first planar rectangular electrode and the 3rd planar rectangular electrode
Ground connection, incoming transport pumping signal I on the second planar rectangular electrode；
(2) response signal is detected between voltage electrode, specially：It is interdigital that two pair plane interdigital electrode centering two is measured respectively
Voltage V between electrode1And V2；
(3) electrical conductivity is calculated, specially：The electrical conductivity of water bodyIn formula, K is cell constant of conductometric vessel.
6. a kind of employing MEMS electrode formula low conductivity sensor according to claim 5 measures the side of water body electrical conductivity
Method, it is characterised in that V is kept by amplifier feedback circuit1And V2Amplitude.
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| CN201611026949.4A CN106501615B (en) | 2016-11-16 | 2016-11-16 | A kind of MEMS electrode formula low conductivity sensor and its measurement method |
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| CN201611026949.4A CN106501615B (en) | 2016-11-16 | 2016-11-16 | A kind of MEMS electrode formula low conductivity sensor and its measurement method |
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| CN106501615B CN106501615B (en) | 2019-03-01 |
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Cited By (5)
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| CN107185850A (en) * | 2017-06-06 | 2017-09-22 | 浙江大学 | A kind of Vigor of Zea mays L. Seeds detection means based on high light spectrum image-forming and electrical impedance |
| CN107576855A (en) * | 2017-10-12 | 2018-01-12 | 河海大学 | A kind of low conductivity microsensor and application method |
| CN107576854A (en) * | 2017-10-12 | 2018-01-12 | 河海大学 | A kind of interdigital concentric circles MEMS low conductivities sensor of band and application method |
| CN109425639A (en) * | 2017-08-28 | 2019-03-05 | 通用汽车环球科技运作有限责任公司 | For detecting method and apparatus existing for fluid |
| CN113465488A (en) * | 2021-06-17 | 2021-10-01 | 上海交通大学 | Interdigital array device for measuring thickness of liquid film on wall surface and detection method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107185850A (en) * | 2017-06-06 | 2017-09-22 | 浙江大学 | A kind of Vigor of Zea mays L. Seeds detection means based on high light spectrum image-forming and electrical impedance |
| CN109425639A (en) * | 2017-08-28 | 2019-03-05 | 通用汽车环球科技运作有限责任公司 | For detecting method and apparatus existing for fluid |
| CN107576855A (en) * | 2017-10-12 | 2018-01-12 | 河海大学 | A kind of low conductivity microsensor and application method |
| CN107576854A (en) * | 2017-10-12 | 2018-01-12 | 河海大学 | A kind of interdigital concentric circles MEMS low conductivities sensor of band and application method |
| CN107576855B (en) * | 2017-10-12 | 2020-04-03 | 河海大学 | Low-conductivity microsensor and use method thereof |
| CN107576854B (en) * | 2017-10-12 | 2020-04-03 | 河海大学 | Concentric circle-shaped MEMS low-conductivity sensor with interdigital and application method |
| CN113465488A (en) * | 2021-06-17 | 2021-10-01 | 上海交通大学 | Interdigital array device for measuring thickness of liquid film on wall surface and detection method |
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| CN106501615B (en) | 2019-03-01 |
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