CN103076500A - Conductivity sensor in cofiring structure and manufacturing method thereof - Google Patents
Conductivity sensor in cofiring structure and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses a conductivity sensor in a cofiring structure and a manufacturing method of the conductivity sensor, and relates to the conductivity sensor and the manufacturing method thereof. The invention aims to solve the problem that the current conductivity sensor is difficult in manufacturing method and complex in structure. An upper polar plate and a lower polar plate are fixedly arranged on the upper and lower surfaces of a substrate between the polar plates in a mirror symmetry manner to form a U-shaped structure. The upper polar plate consists of five polar plate substrates which are sequentially overlapped from top to bottom. N electrodes of the first polar plate substrate are respectively connected with N leads of the third polar plate substrate through via holes. The N leads are respectively connected with N output electrodes of the fifth polar plate substrate through via holes. The manufacturing method comprises the steps of: respectively manufacturing M upper electrodes and M lower electrodes by ten substrates; carrying out counterpoint overlapping, isostatic pressing combination and ceramic cutting for five substrates consisting of M upper electrodes, M substrates among the polar plates and five substrates consisting of M lower electrodes to separate a plurality of sensors which are integrated; and finally, cofiring and forming the sensor for measuring the conductivity of liquids.
Description
Technical field
The present invention relates to a kind of conductivity sensor, particularly conductivity sensor of a kind of co-sintering structure and preparation method thereof.
Background technology
Conductivity sensor (comprising four electrode conductivity sensors) and co-sintering technology are known in the art, and conductivity sensor be used for to be measured liquid or the conductivity (conductibity) of the fluids such as diffusion solid that suspend at liquid.Conductivity sensor usually is used for the electrolysis characteristic of solution and hydrolysis properties etc., also be used to detect quality, such as potable water, industrial process waters etc., be widely used in the life production fields such as electric power, chemical industry, environmental protection, food, semi-conductor industry, ocean research exploitation.The co-sintering technology is owing to having and be easy to realize large-scale production and realize that the miniaturization of products is widely used in semiconductor applications, this technology comprised curtain coating, punching, serigraphy, lamination, etc. the processing steps such as static pressure, cutting, sintering.
The unit of conductivity is Siemens/cm.The measurement of conductivity covers from less than 1 * 10
-7The ultrapure water of S/cm surpasses the wide on a large scale electrical conductivity of solution of the concentrated solution of 1S/cm to numerical value.
A kind of conductivity measurement technique comprises with conductive electrode and contacts solution, and for example, a kind of conductivity measurement technique that contacts adopts a kind of conductivity sensor that has two metal electrodes that contact with solution or remove the conductive non-metals electrode.Alternating current (alternating current AC) in addition between electrode, the AC electric current that circulates between electrode can be determined cell constant of conductometric vessel (specific conductance).The contact-type conductivity sensor is referred to as again the electrode type conductivity sensor, and this class sensor adopts two, four even seven contact electrodes usually, and these electrodes directly contact with fluid to be measured.The electrode type conductivity sensor that has four electrodes, four electrodes are exposed in the detected solution, and wherein pair of electrodes applies a constant electric current, measures the change in voltage between other pair of electrodes, according to electric current and magnitude of voltage, calculates the conductivity value of liquid.
Four traditional electrode structures are that conducting medium material (stainless steel, titanium alloy, graphite, gold, platinum, silver etc.) is processed into the right cylinder with certain diameter, be sealed in the non-conductive pedestals such as plastics, pottery, thereby make the contact-type conductivity sensor with four electrodes.One end of pedestal is exposed to electrode in the detected solution.Fig. 1 is four electrode conductivity sensor schematic diagram of traditional structure.Sensor 14 is connected to signal processing system 18.The surface 17 of sensor 14 is exposed to detected solution with the surface 16 of contact rod 15.Fig. 2 is the upward view of sensor 14, shows the surface 16 of contact rod 15.
In recent years, make the contact-type conductivity sensor by using the semiconductor planar technology, by semiconductor processing techniques with electrode deposition on passive silicon chip, the conductivity sensor size that this technology is made is little, is suitable for extensive manufacturing, low cost of manufacture, but manufacture method is difficult, complex structure.
Summary of the invention
The objective of the invention is in order to solve present conductivity sensor manufacture method difficulty, baroque problem the invention provides conductivity sensor of a kind of co-sintering structure and preparation method thereof.
The conductivity sensor of co-sintering structure of the present invention, it comprises substrate between top crown, bottom crown and pole plate; Described top crown 1 is identical with the bottom crown structure, and upper surface and lower surface that top crown and bottom crown mirror image symmetry are fixed on substrate between pole plate form " recessed " character form structure; The end that substrate is connected between top crown and the lower utmost point and pole plate is stiff end, and the other end is free end;
The upper surface of the free end of the first pole plate substrate is provided with N electrode, and the upper surface of tri-electrode substrate is provided with N root lead-in wire, and the lower surface of the 5th pole plate substrate arranges N output electrode,
The first pole plate substrate, the second pole plate substrate, tri-electrode substrate, quadripolar plate substrate and the 5th pole plate substrate arrange respectively N via hole, described via hole be the upper surface of separately substrate to the penetrating hole of lower surface, be provided with conducting metal in the described penetrating hole;
A described N electrode respectively by the on-chip N of the first a pole plate via hole be connected the on-chip N root of the on-chip N of a pole plate via hole and tri-electrode and go between and be connected, the on-chip N root of tri-electrode N the via hole that passes through respectively the on-chip N of a tri-electrode via hole, the on-chip N of a quadripolar plate via hole and the 5th pole plate substrate that go between is connected with N output electrode of the 5th pole plate substrate lower surface.
The method for making of the sensor, it comprises the steps:
Step 1: utilize five substrates to make a plurality of top crowns, the making principle is: make M the first pole plate substrate at the first substrate, at the second substrate and M M the second pole plate substrate of position making that the first pole plate substrate is corresponding, at the 3rd substrate and M M tri-electrode substrate of position making that the second pole plate substrate is corresponding, at the 4th substrate and M M quadripolar plate substrate of position making that the tri-electrode substrate is corresponding, the 5th substrate with make M the 5th pole plate substrate with position corresponding to M quadripolar plate substrate, the making step of described top crown is:
Step 1: utilize hole-punching method in the co-sintering method to make respectively the via hole of five pole plate substrates at five substrates;
Step 2: utilize method for printing screen or filling perforation method in the co-sintering method that the described via hole in the step 1 is filled out conducting metal;
Step 3: utilize method for printing screen in the co-sintering method to make N electrode of the first pole plate substrate at the upper surface of the first substrate, N electrode is connected with the corresponding via hole of described the first pole plate substrate respectively;
Step 4: utilize the N root that method for printing screen is made the tri-electrode substrate at the upper surface of the 3rd substrate in the co-sintering method to go between, N root lead-in wire is connected with the corresponding via hole of described tri-electrode substrate respectively;
Step 5: utilize N the output electrode that method for printing screen is made the 5th pole plate substrate in the co-sintering method at the lower surface of the 5th substrate, N output electrode is connected with the corresponding via hole of described the 5th pole plate substrate respectively;
Step 2: utilize other five substrates to make a plurality of bottom crowns, the making step of making principle and bottom crown is identical with step 1;
Step 3: step 1 is made substrate and step 2 between five substrates of top crown, an existing M pole plate make five pole plate substrates of bottom crown and carry out the contraposition lamination by high precision contraposition lamination techniques, a plurality of sensors of shape all-in-one-piece; Step 4: the substrate behind the step 3 contraposition lamination is realized combination between substrate by isostatic pressing technology;
Step 5: to step 4 in conjunction with after substrate by ceramic cutting technique a plurality of sensors of described one are separated into a plurality of independently sensors, again the sensor after separating by the SINTERING TECHNOLOGY sinter molding.
Described top crown also comprises detector unit, the 5th pole plate substrate also comprises two temperature detection output electrodes, described detector unit is arranged on the upper surface of tri-electrode substrate, the two ends of described detector unit are connected with two temperature detection output electrodes of the 5th pole plate substrate with the on-chip via hole of the 5th pole plate by the on-chip via hole of tri-electrode, the on-chip via hole of quadripolar plate respectively
The method for making of the sensor, it comprises the steps:
Step 1: utilize five substrates to make a plurality of top crowns, the making principle is: make M the first pole plate substrate at the first substrate, at the second substrate and M M the second pole plate substrate of position making that the first pole plate substrate is corresponding, at the 3rd substrate and M M tri-electrode substrate of position making that the second pole plate substrate is corresponding, at the 4th substrate and M M quadripolar plate substrate of position making that the tri-electrode substrate is corresponding, the 5th substrate with make M the 5th pole plate substrate with position corresponding to M quadripolar plate substrate, detailed process is:
Step 1: utilize the hole-punching method in the co-sintering method to make via hole at each substrate respectively;
Step 2: utilize method for printing screen or filling perforation method in the co-sintering method that each via hole of making in the step 1 is filled out conducting metal;
Step 3: utilize the method for printing screen in the co-sintering method to make N electrode at the upper surface of first on-chip each the first pole plate substrate, N electrode is connected with the corresponding via hole of described the first pole plate substrate respectively;
Step 4: utilize the method for printing screen in the co-sintering method to make N root lead-in wire at the upper surface of the 3rd on-chip each tri-electrode substrate, N root lead-in wire is connected with the corresponding via hole of described tri-electrode substrate respectively;
Step 5: utilize thick-film technique or thin-film technique method to make detector unit at the upper surface of the 3rd on-chip each tri-electrode substrate, two ends of detector unit are connected with the corresponding via hole of described tri-electrode substrate respectively;
Step 6: utilize the method for printing screen in the co-sintering method to make N output electrode at the lower surface of each the 5th pole plate substrate of the 5th substrate, N output electrode is connected with the corresponding via hole of described the 5th pole plate substrate respectively;
Step 2: utilize other five substrates, repeating step one is made M bottom crown;
Step 3: five pole plate substrates of the bottom crown of substrate and step 2 making carry out the contraposition lamination by high precision contraposition lamination techniques, a plurality of sensors of shape all-in-one-piece between five substrates of the top crown that step 1 is made, a M pole plate;
Step 4: the substrate behind the step 3 contraposition lamination is realized combination between substrate by isostatic pressing technology;
Step 5: to step 4 in conjunction with after substrate by ceramic cutting technique a plurality of sensors of described one are separated into a plurality of independently sensors, again the sensor after separating by the SINTERING TECHNOLOGY sinter molding.
The invention has the advantages that, the conductivity structure of conductivity sensor of the present invention is realized miniaturization, and can make by adjusting electrode size and substrate layer numeral system the conductivity sensor of different measuring scope.The manufacturing technology of the method for making of conductivity sensor of the present invention is simple, be easy to realize batch production, and stability is improved easier and other sensor realization Integration Design and making.
Description of drawings
Fig. 1 is four electrode conductivity sensors of traditional structure and the schematic diagram of detection system thereof.
Fig. 2 is the upward view of four electrode conductivity sensors among Fig. 1.
Fig. 3 is the perspective view of the conductivity sensor of co-sintering structure of the present invention.
Fig. 4 is the textural association schematic diagram of the conductivity sensor of co-sintering structure of the present invention.Fig. 5 is the textural association schematic diagram of bottom crown of the conductivity sensor of co-sintering structure of the present invention.
Fig. 6 is the sectional view of Fig. 3.
Fig. 7 is the vertical view of the first pole plate substrate of the conductivity sensor of co-sintering structure of the present invention.
Fig. 8 is the B-B cut-open view of Fig. 7.
Fig. 9 is the vertical view of the second pole plate substrate of the conductivity sensor of co-sintering structure of the present invention.
Figure 10 is the C-C cut-open view of Fig. 9.
Figure 11 is the vertical view of tri-electrode substrate of the conductivity sensor of co-sintering structure of the present invention.
Figure 12 is the D-D cut-open view of Figure 11.
Figure 13 is the vertical view of quadripolar plate substrate of the conductivity sensor of co-sintering structure of the present invention.
Figure 14 is the E-E cut-open view of Figure 13.Figure 15 is the vertical view of the 5th pole plate substrate of the conductivity sensor of co-sintering structure of the present invention.
Figure 16 is the F-F cut-open view of Figure 15.
Embodiment
Embodiment one: in conjunction with Fig. 1 to Figure 16 present embodiment is described, the conductivity sensor of the described co-sintering structure of present embodiment, it comprises substrate 3 between top crown 1, bottom crown and pole plate; Described top crown 1 is identical with the bottom crown structure, and upper surface and lower surface that top crown and bottom crown mirror image symmetry are fixed on substrate 3 between pole plate form " recessed " character form structure; The end that substrate 3 is connected between top crown and the lower utmost point and pole plate is stiff end, and the other end is free end;
The upper surface of the free end of the first pole plate substrate 1-1-1 is provided with N electrode 1-2, and the upper surface of tri-electrode substrate 1-1-3 is provided with N root lead-in wire 1-3, and the lower surface of the 5th pole plate substrate 1-1-5 arranges N output electrode 1-4,
The first pole plate substrate 1-1-1, the second pole plate substrate 1-1-2, tri-electrode substrate 1-1-3, quadripolar plate substrate 1-1-4 and the 5th pole plate substrate 1-1-5 arrange respectively N via hole, described via hole be the upper surface of separately substrate to the penetrating hole of lower surface, be provided with conducting metal in the described penetrating hole;
Described N electrode 1-2 respectively by N via hole on the first pole plate substrate 1-1-1 be connected N via hole and N root on the tri-electrode substrate 1-1-3 on the pole plate substrate 1-1-2 1-3 that goes between and be connected, N the via hole that 1-3 passes through respectively N via hole, the on-chip N of a quadripolar plate via hole and the 5th pole plate substrate 1-1-5 on the tri-electrode substrate 1-1-3 that go between of the N root on the tri-electrode substrate 1-1-3 is connected with N output electrode 1-4 of the 5th pole plate substrate 1-1-5 lower surface.
Embodiment two: present embodiment is that the conductivity sensor to embodiment one described co-sintering structure further limits, and described the second pole plate substrate 1-1-2 and quadripolar plate substrate 1-1-4 are the single or multiple lift structure.
Embodiment three: present embodiment is that the conductivity sensor to embodiment one described co-sintering structure further limits, and substrate 3 is the single or multiple lift structure between pole plate.
In actual applications, according to the number of plies of the performance requirement of described conductivity sensor being determined substrate 3 between pole plate.
Embodiment four: present embodiment is that the conductivity sensor to embodiment one described co-sintering structure further limits, and described N equals 1 or 2 or 3 or 4 or 5.
Embodiment five: present embodiment is that the conductivity sensor to embodiment one described co-sintering structure further limits, top crown 1 also comprises detector unit 4, the 5th pole plate substrate 1-1-5 also comprises two temperature detection output electrode 1-5, described detector unit 4 is arranged on the upper surface of tri-electrode substrate 1-1-3, and the two ends of described detector unit 4 are respectively by the via hole on the tri-electrode substrate 1-1-3, via hole on the quadripolar plate substrate 1-1-4 is connected with two temperature detection output electrode 1-5 of the 5th pole plate substrate 1-1-5 with via hole on the 5th pole plate substrate 1-1-5.
Embodiment six: present embodiment is the method for making of the conductivity sensor of embodiment one described co-sintering structure, and it comprises the steps:
Step 1: utilize five substrates to make a plurality of top crowns 1, the making principle is: make M the first pole plate substrate 1-1-1 at the first substrate, at the second substrate and M M the second pole plate substrate 1-1-2 of position making that the first pole plate substrate 1-1-1 is corresponding, at the 3rd substrate and M M tri-electrode substrate 1-1-3 of position making that the second pole plate substrate 1-1-2 is corresponding, at the 4th substrate and M M quadripolar plate substrate 1-1-4 of position making that tri-electrode substrate 1-1-3 is corresponding, the 5th substrate with make M the 5th pole plate substrate 1-1-5 with position corresponding to M quadripolar plate substrate 1-1-4, detailed process is:
Step 1: utilize the hole-punching method in the co-sintering method to make via hole at each substrate respectively;
Step 2: utilize method for printing screen or filling perforation method in the co-sintering method that each via hole of making in the step 1 is filled out conducting metal;
Step 3: utilize the method for printing screen in the co-sintering method to make N electrode 1-2 at the upper surface of first on-chip each the first pole plate substrate 1-1-1, N electrode 1-2 is connected with the corresponding via hole of described the first pole plate substrate 1-1-1 respectively;
Step 4: utilize the method for printing screen in the co-sintering method to make N root lead-in wire 1-3 at the upper surface of the 3rd on-chip each tri-electrode substrate 1-1-3, N root lead-in wire 1-3 is connected with the corresponding via hole of described tri-electrode substrate 1-1-3 respectively;
Step 5: utilize the method for printing screen in the co-sintering method to make N output electrode 1-4 at the lower surface of each the 5th pole plate substrate 1-1-5 of the 5th substrate, N output electrode 1-4 is connected with the corresponding via hole of described the 5th pole plate substrate 1-1-5 respectively;
Step 2: utilize other five substrates, repeating step one is made M bottom crown;
Step 3: five pole plate substrates of the bottom crown of substrate 3 and step 2 making carry out the contraposition lamination by high precision contraposition lamination techniques, a plurality of sensors of shape all-in-one-piece between five substrates of the top crown that step 1 is made, a M pole plate;
Step 4: the substrate behind the step 3 contraposition lamination is realized combination between substrate by isostatic pressing technology;
Step 5: to step 4 in conjunction with after substrate by ceramic cutting technique a plurality of sensors of described one are separated into M independently sensor, again the sensor after separating by the SINTERING TECHNOLOGY sinter molding.
The principle of the contraposition lamination in the step 3 is: N the electrode 1-2 of the first pole plate substrate 1-1-1 respectively with tri-electrode substrate 1-1-3 on N root lead-in wire 1-3 realize being electrically connected, described N root lead-in wire 1-3 is connected with N output electrode 1-4 of the 5th pole plate substrate 1-1-5 lower surface respectively, and N electrode is exposed outside, is used for contacting with liquid.Embodiment seven: present embodiment is the method for making of the conductivity sensor of embodiment five described co-sintering structures,
It comprises the steps:
Step 1: utilize five substrates to make a plurality of top crowns 1, the making principle is: make M the first pole plate substrate 1-1-1 at the first substrate, at the second substrate and M M the second pole plate substrate 1-1-2 of position making that the first pole plate substrate 1-1-1 is corresponding, at the 3rd substrate and M M tri-electrode substrate 1-1-3 of position making that the second pole plate substrate 1-1-2 is corresponding, at the 4th substrate and M M quadripolar plate substrate 1-1-4 of position making that tri-electrode substrate 1-1-3 is corresponding, the 5th substrate with make M the 5th pole plate substrate 1-1-5 with position corresponding to M quadripolar plate substrate 1-1-4, detailed process is:
Step 1: utilize the hole-punching method in the co-sintering method to make via hole at each substrate respectively;
Step 2: utilize method for printing screen or filling perforation method in the co-sintering method that each via hole of making in the step 1 is filled out conducting metal;
Step 3: utilize the method for printing screen in the co-sintering method to make N electrode 1-2 at the upper surface of first on-chip each the first pole plate substrate 1-1-1, N electrode 1-2 is connected with the corresponding via hole of described the first pole plate substrate 1-1-1 respectively;
Step 4: utilize the method for printing screen in the co-sintering method to make N root lead-in wire 1-3 at the upper surface of the 3rd on-chip each tri-electrode substrate 1-1-3, N root lead-in wire 1-3 is connected with the corresponding via hole of described tri-electrode substrate 1-1-3 respectively;
Step 5: utilize thick-film technique or thin-film technique method to make detector unit 4 at the upper surface of the 3rd on-chip each tri-electrode substrate 1-1-3, two ends of detector unit 4 are connected with the corresponding via hole of described tri-electrode substrate 1-1-3 respectively;
Step 6: utilize the method for printing screen in the co-sintering method to make N output electrode 1-4 at the lower surface of each the 5th pole plate substrate 1-1-5 of the 5th substrate, N output electrode 1-4 is connected with the corresponding via hole of described the 5th pole plate substrate 1-1-5 respectively;
Step 2: utilize other five substrates, repeating step one is made M bottom crown;
Step 3: five pole plate substrates of the bottom crown of substrate 3 and step 2 making carry out the contraposition lamination by high precision contraposition lamination techniques, a plurality of sensors of shape all-in-one-piece between five substrates of the top crown that step 1 is made, a M pole plate;
Step 4: the substrate behind the step 3 contraposition lamination is realized combination between substrate by isostatic pressing technology;
Step 5: to step 4 in conjunction with after substrate by ceramic cutting technique a plurality of sensors of described one are separated into M independently sensor, again the sensor after separating by the SINTERING TECHNOLOGY sinter molding.
Embodiment eight: present embodiment is the further restriction to the method for making of the conductivity sensor of embodiment six or seven described co-sintering structures, and described substrate is for adopting stupalith or glass material or its both combinations to utilize casting method to be made.
Embodiment nine: present embodiment is the further restriction to the method for making of the conductivity sensor of embodiment six or seven described co-sintering structures, and described electrode is circular or annular.
Embodiment ten: present embodiment is the further restriction to the method for making of the conductivity sensor of embodiment six or seven described co-sintering structures, and the described hole-punching method in the step 1 is mechanical punching or laser boring.
The conductivity sensor of the co-sintering structure of four electrodes is described in conjunction with Fig. 1 to Figure 16, and described N equals 2,
Fig. 3 is the stereographic map of conductivity sensor of the co-sintering structure of four electrodes, substrate adopts casting method to make, has certain thickness, substrate is comprised of stupalith, glass material or both compositions, substrate normally non-conductive with inorganic, substrate material comprises zirconia, aluminium oxide, glass or any other suitable material.
Fig. 6 is Fig. 3 cut-open view.4 via holes 6 are set on the top crown 1, via hole be used for electrode 1-2 and lead-in wire 1-3 and go between 1-3 and output terminal 1-4 between be electrically connected.
Fig. 7 is the vertical view of the first pole plate substrate 1-1-1.The first pole plate substrate 1-1-1 is that the wherein electrode 1-2 of individual layer is patterned, and is produced on the first pole plate substrate 1-1-1 by screen printing technique.Via hole is through hole, utilize machinery or laser drilling to realize, the filled conductive metal material, extend through the whole length of via hole to lower surface from the upper surface of the first pole plate substrate 1-1-1, realize being electrically connected between the upper via hole of electrode 1-2 and the first pole plate substrate 1-1-1, this filling can be to realize by filling perforation or screen printing technique.
Fig. 9 is the vertical view of the second pole plate substrate 1-1-2.The second pole plate substrate 1-1-2 can be individual layer or multilayer.Wherein via hole is through hole, utilize machinery or laser drilling to realize, the filled conductive conductive metallic material, extend through the whole length of via hole to lower surface from the second pole plate substrate 1-1-2 upper surface, realize being electrically connected between the upper 1-3 of lead-in wire of the first pole plate substrate 1-1-1 upper surface via hole and tri-electrode substrate 1-1-3 substrate (7), this filling can be to realize by filling perforation or screen printing technique.
Figure 11 is the vertical view of tri-electrode substrate 1-1-3.Tri-electrode substrate 1-1-3 is individual layer, and wherein go between 1-3 and detector unit 4 are patterned, and are produced on the tri-electrode substrate 1-1-3 by screen printing technique.Via hole is through hole, utilize machinery or laser drilling to realize, the filled conductive conductive metallic material, extend through the whole length of via hole to lower surface from tri-electrode substrate 1-1-3 upper surface, realize being electrically connected between the upper via hole of lead-in wire 1-3 and detector unit 4 and quadripolar plate substrate 1-1-4, this filling can be to realize by filling perforation or screen printing technique.
Figure 13 is the vertical view of quadripolar plate substrate 1-1-4.Quadripolar plate substrate 1-1-4 can be individual layer or multilayer.Wherein via hole is through hole, utilize the proper technology realizations such as machinery/laser boring, the filled conductive metal material, extend through the whole length of via hole to inside surface from quadripolar plate substrate 1-1-4 outside surface, realize being electrically connected between the upper via hole of quadripolar plate substrate 1-1-4 upper surface via hole and the 5th pole plate substrate 1-1-5, this filling can be to realize by filling perforation or screen printing technique.
Figure 15 is the vertical view of the 5th pole plate substrate 1-1-5.The 5th pole plate substrate 1-1-5 is individual layer, and wherein output terminal 1-4 is patterned, and is produced on the 5th pole plate substrate 1-1-5 by screen printing technique.Via hole is through hole, utilize machinery or laser drilling to realize, conductive metallic material, extend through the whole length of via hole to lower surface from the 5th pole plate substrate 1-1-5 upper surface, realize being electrically connected between the upper via hole of output terminal 1-4 and the 5th pole plate substrate 1-1-5, this filling can be to realize by filling perforation or screen printing technique.
Liquid electric conductivity changes with the temperature variation of liquid, so conductivity sensor generally includes temperature sensor in order to the conductivity value of testing is carried out the temperature correction.For the embodiment of the invention, at top crown or the inner set temperature detecting element 4 of bottom crown.Detector unit 4 is made of any material with resistance characteristic, platinum for example, its resistance value variation with temperature and changing.Adopt the fabrication techniques such as sputter, serigraphy to tri-electrode substrate 1-1-3, and utilize the electrical connection of via hole realization and output terminal 1-4.
Conductivity sensor among the present invention can embed in the suitable pedestal, and is connected with suitable signal processor.Although reference example describes the present invention, can carry out variation on form and the details in the situation that do not break away from the spirit and scope of the present invention, comprise changing number of electrodes shape etc., this it will be apparent to those skilled in the art that.
Claims (10)
1. the conductivity sensor of co-sintering structure is characterized in that, it comprises substrate (3) between top crown (1), bottom crown and pole plate; Described top crown (1) is identical with the bottom crown structure, and upper surface and lower surface that top crown and bottom crown mirror image symmetry are fixed on substrate between pole plate (3) form " recessed " character form structure; The end that substrate (3) is connected between top crown and the lower utmost point and pole plate is stiff end, and the other end is free end;
Top crown (1) is comprised of five pole plate substrates; Described five overlapping placements of pole plate substrate are followed successively by the first pole plate substrate (1-1-1), the second pole plate substrate (1-1-2), tri-electrode substrate (1-1-3), quadripolar plate substrate (1-1-4) and the 5th pole plate substrate (1-1-5) from top to bottom;
The upper surface of the free end of the first pole plate substrate (1-1-1) is provided with N electrode (1-2), the upper surface of tri-electrode substrate (1-1-3) is provided with N root lead-in wire (1-3), the lower surface of the 5th pole plate substrate (1-1-5) arranges N output electrode (1-4)
The first pole plate substrate (1-1-1), the second pole plate substrate (1-1-2), tri-electrode substrate (1-1-3), quadripolar plate substrate (1-1-4) and the 5th pole plate substrate (1-1-5) arrange respectively N via hole, described via hole be the upper surface of separately substrate to the penetrating hole of lower surface, be provided with conducting metal in the described penetrating hole;
A described N electrode (1-2) is connected with the N root lead-in wire (1-3) on tri-electrode substrate (1-1-3) with N via hole on the second pole plate substrate (1-1-2) by N via hole on the first pole plate substrate (1-1-1) respectively, and the N root lead-in wire (1-3) on tri-electrode substrate (1-1-3) is connected with N the output electrode (1-4) of the 5th pole plate substrate (1-1-5) lower surface by N via hole of N via hole, the on-chip N of a quadripolar plate via hole and the 5th pole plate substrate (1-1-5) on tri-electrode substrate (1-1-3) respectively.
2. the conductivity sensor of co-sintering structure according to claim 1 is characterized in that, described the second pole plate substrate (1-1-2) is the single or multiple lift structure with quadripolar plate substrate (1-1-4).
3. the conductivity sensor of co-sintering structure according to claim 1 is characterized in that, substrate between pole plate (3) is the single or multiple lift structure.
4. the conductivity sensor of co-sintering structure according to claim 1 is characterized in that, described N equals 1 or 2 or 3 or 4 or 5.
5. the conductivity sensor of co-sintering structure according to claim 1, it is characterized in that, top crown (1) also comprises detector unit (4), the 5th pole plate substrate (1-1-5) also comprises two temperature detection output electrodes (1-5), described detector unit (4) is arranged on the upper surface of tri-electrode substrate (1-1-3), and the two ends of described detector unit (4) are respectively by the via hole on the tri-electrode substrate (1-1-3), via hole on the quadripolar plate substrate (1-1-4) is connected with two temperature detection output electrodes (1-5) of the 5th pole plate substrate (1-1-5) with via hole on the 5th pole plate substrate (1-1-5).
6. the method for making of the conductivity sensor of co-sintering structure claimed in claim 1, it is characterized in that, it comprises the steps: step 1: utilize five substrates to make a plurality of top crowns (1), the making principle is: make M the first pole plate substrate (1-1-1) at the first substrate, at the second substrate and M M the second pole plate substrate (1-1-2) of position making that the first pole plate substrate (1-1-1) is corresponding, at the 3rd substrate and M M tri-electrode substrate (1-1-3) of position making that the second pole plate substrate (1-1-2) is corresponding, at the 4th substrate and M M quadripolar plate substrate (1-1-4) of position making that tri-electrode substrate (1-1-3) is corresponding, the 5th substrate with make individual the 5th pole plate substrate (1-1-5) of M with position corresponding to M quadripolar plate substrate (1-1-4), detailed process is:
Step 1: utilize the hole-punching method in the co-sintering method to make via hole at each substrate respectively;
Step 2: utilize method for printing screen or filling perforation method in the co-sintering method that each via hole of making in the step 1 is filled out conducting metal;
Step 3: utilize the method for printing screen in the co-sintering method to make N electrode (1-2) at the upper surface of first on-chip each the first pole plate substrate (1-1-1), N electrode (1-2) is connected with the corresponding via hole of described the first pole plate substrate (1-1-1) respectively;
Step 4: utilize the method for printing screen in the co-sintering method to make N root lead-in wire (1-3) at the upper surface of the 3rd on-chip each tri-electrode substrate (1-1-3), N root lead-in wire (1-3) is connected with the corresponding via hole of described tri-electrode substrate (1-1-3) respectively;
Step 5: utilize the method for printing screen in the co-sintering method to make N output electrode (1-4) at the lower surface of each the 5th pole plate substrate (1-1-5) of the 5th substrate, N output electrode (1-4) is connected with the corresponding via hole of described the 5th pole plate substrate (1-1-5) respectively;
Step 2: utilize other five substrates, repeating step one is made M bottom crown;
Step 3: five pole plate substrates of the bottom crown of substrate (3) and step 2 making carry out the contraposition lamination by high precision contraposition lamination techniques, a plurality of sensors of shape all-in-one-piece between five substrates of the top crown that step 1 is made, a M pole plate;
Step 4: the substrate behind the step 3 contraposition lamination is realized combination between substrate by isostatic pressing technology;
Step 5: to step 4 in conjunction with after substrate by ceramic cutting technique a plurality of sensors of described one are separated into M independently sensor, again the sensor after separating by the SINTERING TECHNOLOGY sinter molding.
7. the method for making of the conductivity sensor of co-sintering structure claimed in claim 5 is characterized in that, it comprises the steps:
Step 1: utilize five substrates to make a plurality of top crowns (1), the making principle is: make M the first pole plate substrate (1-1-1) at the first substrate, at the second substrate and M M the second pole plate substrate (1-1-2) of position making that the first pole plate substrate (1-1-1) is corresponding, at the 3rd substrate and M M tri-electrode substrate (1-1-3) of position making that the second pole plate substrate (1-1-2) is corresponding, at the 4th substrate and M M quadripolar plate substrate (1-1-4) of position making that tri-electrode substrate (1-1-3) is corresponding, the 5th substrate with make individual the 5th pole plate substrate (1-1-5) of M with position corresponding to M quadripolar plate substrate (1-1-4), detailed process is:
Step 1: utilize the hole-punching method in the co-sintering method to make via hole at each substrate respectively;
Step 2: utilize method for printing screen or filling perforation method in the co-sintering method that each via hole of making in the step 1 is filled out conducting metal;
Step 3: utilize the method for printing screen in the co-sintering method to make N electrode (1-2) at the upper surface of first on-chip each the first pole plate substrate (1-1-1), N electrode (1-2) is connected with the corresponding via hole of described the first pole plate substrate (1-1-1) respectively;
Step 4: utilize the method for printing screen in the co-sintering method to make N root lead-in wire (1-3) at the upper surface of the 3rd on-chip each tri-electrode substrate (1-1-3), N root lead-in wire (1-3) is connected with the corresponding via hole of described tri-electrode substrate (1-1-3) respectively;
Step 5: utilize thick-film technique or thin-film technique method to make detector unit (4) at the upper surface of the 3rd on-chip each tri-electrode substrate (1-1-3), two ends of detector unit (4) are connected with the corresponding via hole of described tri-electrode substrate (1-1-3) respectively;
Step 6: utilize the method for printing screen in the co-sintering method to make N output electrode (1-4) at the lower surface of each the 5th pole plate substrate (1-1-5) of the 5th substrate, N output electrode (1-4) is connected with the corresponding via hole of described the 5th pole plate substrate (1-1-5) respectively;
Step 2: utilize other five substrates, repeating step one is made M bottom crown;
Step 3: five pole plate substrates of the bottom crown of substrate (3) and step 2 making carry out the contraposition lamination by high precision contraposition lamination techniques, a plurality of sensors of shape all-in-one-piece between five substrates of the top crown that step 1 is made, a M pole plate;
Step 4: the substrate behind the step 3 contraposition lamination is realized combination between substrate by isostatic pressing technology;
Step 5: to step 4 in conjunction with after substrate by ceramic cutting technique a plurality of sensors of described one are separated into M independently sensor, again the sensor after separating by the SINTERING TECHNOLOGY sinter molding.
8. according to claim 6 or the method for making of the conductivity sensor of 7 described co-sintering structures, it is characterized in that, described substrate is for adopting stupalith or glass material or its both combinations to utilize casting method to be made.
9. according to claim 6 or the method for making of the conductivity sensor of 7 described co-sintering structures, it is characterized in that, described electrode is circular or annular.
10. according to claim 6 or the method for making of the conductivity sensor of 7 described co-sintering structures, it is characterized in that, the described hole-punching method in the step 1 is mechanical punching or laser boring.
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