CN106501615B - A kind of MEMS electrode formula low conductivity sensor and its measurement method - Google Patents
A kind of MEMS electrode formula low conductivity sensor and its measurement method Download PDFInfo
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- CN106501615B CN106501615B CN201611026949.4A CN201611026949A CN106501615B CN 106501615 B CN106501615 B CN 106501615B CN 201611026949 A CN201611026949 A CN 201611026949A CN 106501615 B CN106501615 B CN 106501615B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/22—Measuring resistance of fluids
Abstract
The invention discloses a kind of MEMS electrode formula low conductivity sensor and its measurement methods, belong to microelectromechanical systems manufacture and field of water quality detection.The sensor is made of insulating substrate, three planar rectangular electrodes and two pairs of plane interdigital electrodes, successively level arranges all electrodes, and symmetrical distribution, three planar rectangular electrode sizes are equal, are arranged mutually parallel in both ends and middle, and as galvanic electrode, for applying pumping signal, two pairs of plane interdigital electrodes are arranged mutually parallel between two planar rectangular electrodes to equal in magnitude, and as voltage electrode, for detecting response signal.Sensor structure provided by the invention is simple, easy to operate, is based on MEMS processing technology, simple process and low cost, compact is versatile, high reliablity, the conductivity measurement suitable for low concentration water body.
Description
Technical field
The present invention relates to a kind of MEMS electrode formula low conductivity sensor and its measurement methods, are related to microelectromechanical systems
Manufacture and field of water quality detection.
Background technique
Water quality detection and daily life and production are closely bound up, and conductivity is highly important measurement ginseng in water quality detection
It counts, in the lower various water bodys of the conductivity such as shallow sea, river mouth, reservoir, generally requires to carry out long-term real-time water quality monitoring.It is existing
In technology, the conductivity sensor fabricated using tradition machinery, machining accuracy is low, difficulty of processing is big, processing cost is high, no
Be suitble to high-volume manufacture, and use MEMS technology manufacture conductivity sensor it is small in size, it is low in energy consumption, at low cost, can high-volume
Production, is the developing direction of conductivity sensor.
Conductivity sensor is broadly divided into electric pole type and two kinds of induction type, and wherein electric pole type conductivity sensor is due to subsequent
Processing circuit is simple, measurement accuracy is high, easy to use, is widely used in water quality detection.With other electric pole types MEMS conductivity
Sensor is compared, and the MEMS conductivity sensor being made of a pair of of plane interdigital electrode, cell constant of conductometric vessel is lower, especially suitable
It shares in the water quality detection of low conductivity water body, but the interdigital electrode of this conductivity sensor is both galvanic electrode and electric
Piezoelectricity pole can generate polarizing voltage on the contact surface of water body and electrode to be measured in measurement process, generate measurement result certain
Error, limit its application in water quality detection.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of MEMS electrode formula low conductivity sensor and its measurement sides
Method, the present invention overcome the shortcomings of tradition machinery processing technology, manufacture conductivity sensor using MEMS processing technology；Overcome simultaneously
For existing MEMS plane interdigital electrode formula conductivity sensor when detecting low conductivity water body, there are polarity effects, generate measurement
Error, the not high deficiency of measurement accuracy；Conductivity sensor structure of the invention is simple, and compact is easy to operate, cost compared with
Low, measuring speed is fast, and measurement accuracy is high.
The present invention uses following technical scheme to solve above-mentioned technical problem:
On the one hand, the present invention provides a kind of MEMS electrode formula low conductivity sensor, including insulating substrate and is fixed on
The three planar rectangular electrodes and two pairs of plane interdigital electrodes pair of insulating substrate upper surface, in which:
Three planar rectangular electrodes include equal-sized first planar rectangular electrode, the second planar rectangular electrode and
Third planar rectangular electrode；Two pairs of plane interdigital electrodes to include equal-sized first plane interdigital electrode to and second
Plane interdigital electrode pair；
All electrodes are successively arranged in the upper surface level of insulating substrate, are followed successively by the first planar rectangular electricity from left to right
Pole, the first plane interdigital electrode to, the second planar rectangular electrode, the second plane interdigital electrode to, third planar rectangular electrode, and
Symmetrical distribution；There is interval between electrode and electrode and is parallel to each other；
Three planar rectangular electrodes are galvanic electrode, and one end of each planar rectangular electrode respectively has a metal
Anchoring area, for applying pumping signal；
For two pairs of plane interdigital electrodes to for voltage electrode, the side of each plane interdigital electrode respectively has a gold
Belong to anchoring area, for detecting response signal.
As a further optimization solution of the present invention, the insulating substrate is made of silica-base material, the upper end of insulating substrate
Face is silicon dioxide insulating layer.
As a further optimization solution of the present invention, all electrodes and its metal anchoring area are passed through by the nickel material of surface gold-plating
Metal micro fabrication is made.
As a further optimization solution of the present invention, the plane interdigital electrode is to including two interdigital interlaced flat
Face interdigital electrode.
On the other hand, above-mentioned MEMS electrode formula low conductivity sensor measurement water body conductance is used the present invention also provides a kind of
The method of rate, which comprises the following steps:
(1) apply pumping signal between galvanic electrode, specifically: by the first planar rectangular electrode and third planar rectangular
Electrode ground connection, accesses ac-excited signal I on the second planar rectangular electrode；
(2) response signal is detected between voltage electrode, specifically: two pairs of plane interdigital electrode centerings two are measured respectively
Voltage V between interdigital electrode1And V2；
(3) conductivity is calculated, specifically: the conductivity of water bodyIn formula, K is cell constant of conductometric vessel.
As a further optimization solution of the present invention, V is kept by amplifier feed circuit1And V2Amplitude.
The invention adopts the above technical scheme compared with prior art, has following technical effect that provided by the invention one
There is structure to be simple and convenient to operate, is measurement accuracy height, simple process, small in size for kind of MEMS electrode formula low conductivity sensor
Ingeniously, low in cost, high reliability.
Detailed description of the invention
Fig. 1 is the overlooking structure figure of MEMS electrode formula low conductivity sensor.
In figure, 1- insulating substrate, 2- planar rectangular electrode, 3- plane interdigital electrode pair, 4- planar rectangular electrode, 5- plane
Interdigital electrode pair, 6- planar rectangular electrode, 7- metal anchoring area, 8- metal anchoring area, 9- metal anchoring area, 10- metal anchoring area, 11- gold
Category anchoring area, 12- metal anchoring area, 13- metal anchoring area, 301- plane interdigital electrode, 302- plane interdigital electrode, 501- plane are interdigital
Electrode, 502- plane interdigital electrode.
Specific embodiment
Technical solution of the present invention is described in further detail with reference to the accompanying drawing:
A kind of overlooking structure figure of MEMS electrode formula low conductivity sensor of the invention, as shown in Figure 1, including insulation
1, three planar rectangular electrode of substrate and two pairs of plane interdigital electrodes pair.Wherein, three planar rectangular electrodes is equal in magnitude, point
It Wei not the first planar rectangular electrode 2, the second planar rectangular electrode 4 and third planar rectangular electrode 6；Two pairs of plane interdigital electrodes pair
It is equal in magnitude, respectively the first plane interdigital electrode to 3 and second plane interdigital electrode to 5, first plane interdigital electrodes to 3
It is made of plane interdigital electrode 301, plane interdigital electrode 302, the first plane interdigital electrode is to 5 by plane interdigital electrode 501, flat
Face interdigital electrode 502 forms.
All electrodes are each attached to the upper surface of insulating substrate 1, and level successively arranges, and one section is spaced between electrode and electrode
Distance, is parallel to each other and symmetrical distribution, and the arrangement of electrode is from left to right successively are as follows: the first planar rectangular electrode 2, first
Plane interdigital electrode is to the 3, second planar rectangular electrode 4, the second plane interdigital electrode to 5, third planar rectangular electrode 6.
Three planar rectangular electrodes are galvanic electrode, and one end of each planar rectangular electrode respectively has a metal anchors
Area, respectively the metal anchoring area 7 of the first planar rectangular electrode 2, the second planar rectangular electrode 4 metal anchoring area 10 and third plane
The metal anchoring area 13 of rectangular electrode 6, for applying pumping signal.
For two pairs of plane interdigital electrodes to for voltage electrode, the side of each plane interdigital electrode respectively has a metal anchors
Area, respectively the metal anchoring area 8 of plane interdigital electrode 301, the metal anchoring area 9 of plane interdigital electrode 302, plane interdigital electrode
501 metal anchoring area 11, the metal anchoring area 12 of plane interdigital electrode 502, for detecting response signal.
Insulating substrate 1 is made of silica-base material, and the upper surface of insulating substrate 1 is silicon dioxide insulating layer.All electrodes 2,
3,4,5,6 and its metal anchoring area 7,8,9,10,11,12,13 be made of the nickel material of surface gold-plating through metal micro fabrication.
The method that the present invention uses above-mentioned MEMS electrode formula low conductivity sensor measurement water body conductivity, including following step
It is rapid:
(1) apply pumping signal between galvanic electrode 2,4,6, specific practice is: by the gold of the first planar rectangular electrode 2
The metal anchoring area 13 for belonging to anchoring area 7 and third planar rectangular electrode 6 is grounded, in the metal anchoring area 13 of the second planar rectangular electrode 4
Ac-excited signal I is accessed, between the second planar rectangular electrode 4 and the first planar rectangular electrode 2, the second planar rectangular electrode
AC field is generated between 4 and third planar rectangular electrode 6 simultaneously.Due to the first planar rectangular electrode 2 and third planar rectangular
Electrode 6 is all grounded, and the water body of sensor internal is shielded, and the electromagnetic interference of external environment can not influence sensor internal
Tested water body；
(2) response signal is detected between voltage electrode 301,302,501,502, specific practice is: measures two pairs respectively
Plane interdigital electrode is to the voltage V between 3,51And V2, that is, measure the alternating electric field received in plane interdigital electrode 301,302
Voltage drop V1, while measuring the voltage drop V of the alternating electric field received in plane interdigital electrode 501,5022, and pass through amplifier
Feed circuit keeps the amplitude of the two voltages；
(3) calculate Conductivity Results, specific way is: sensor is symmetry axis in a left side with the second planar rectangular electrode 4
It is right symmetrical, therefore, the voltage drop V of the alternating electric field received in plane interdigital electrode 301,3021With plane interdigital electrode 501,
The voltage drop V of the alternating electric field received on 5022It is equal in magnitude, in order to avoid asymmetric error caused by machining accuracy, can use
Voltage parameter of the average value of two voltage drops as tested water body, i.e. V=(V1+V2)/2, using conductivity and apply electric current,
The relational expression between voltage is measured, obtains the conductivity of water body, formula is as follows:
In formula, K is cell constant of conductometric vessel.
A kind of MEMS electrode formula low conductivity sensor provided through the invention, overcomes tradition machinery processing technology
Deficiency manufactures conductivity sensor using MEMS processing technology, small in size, low in energy consumption, at low cost, can be mass-produced, simultaneously
Overcome existing MEMS plane interdigital electrode formula conductivity sensor when detecting low conductivity water body, there are polarity effect, measurements
The not high deficiency of precision, voltage electrode and galvanic electrode are separated, and eliminate the influence of polarizing voltage, and lateral electrode is grounded,
Avoid the electromagnetic interference of external environment.There is the MEMS electrode formula low conductivity sensor structure to be simple and convenient to operate, measure essence
Spend height, simple process, high reliability.
The above, the only specific embodiment in the present invention, but scope of protection of the present invention is not limited thereto, appoints
What is familiar with the people of the technology within the technical scope disclosed by the invention, it will be appreciated that expects transforms or replaces, and should all cover
Within scope of the invention, therefore, the scope of protection of the invention shall be subject to the scope of protection specified in the patent claim.
Claims (6)
1. a kind of MEMS electrode formula low conductivity sensor, which is characterized in that including insulating substrate and be fixed on insulating substrate
The three planar rectangular electrodes and two pairs of plane interdigital electrodes pair of upper surface, in which:
Three planar rectangular electrodes include equal-sized first planar rectangular electrode, the second planar rectangular electrode and third
Planar rectangular electrode；Two pairs of plane interdigital electrodes to include equal-sized first plane interdigital electrode to and the second plane
Interdigital electrode pair；
All electrodes are successively arranged in the upper surface level of insulating substrate, are followed successively by the first planar rectangular electrode, from left to right
One plane interdigital electrode to, the second planar rectangular electrode, the second plane interdigital electrode to, third planar rectangular electrode, and in a left side
It is right symmetrical；There is interval between electrode and electrode and is parallel to each other；
Three planar rectangular electrodes are galvanic electrode, and one end of each planar rectangular electrode respectively has a metal anchors
Area, for applying pumping signal；
For two pairs of plane interdigital electrodes to for voltage electrode, the side of each plane interdigital electrode respectively has a metal anchors
Area, for detecting response signal.
2. a kind of MEMS electrode formula low conductivity sensor according to claim 1, which is characterized in that the insulating substrate
It is made of silica-base material, the upper surface of insulating substrate is silicon dioxide insulating layer.
3. a kind of MEMS electrode formula low conductivity sensor according to claim 1, which is characterized in that all electrodes and its
Metal anchoring area is made of the nickel material of surface gold-plating through metal micro fabrication.
4. a kind of MEMS electrode formula low conductivity sensor according to claim 1, which is characterized in that the plane is interdigital
Electrode is to including two interdigital interlaced plane interdigital electrodes.
5. a kind of method using MEMS electrode formula low conductivity sensor measurement water body conductivity, this method is used as right is wanted
Seek any MEMS electrode formula low conductivity sensor measurement water body conductivity in 1 to 4, which is characterized in that including following
Step:
(1) apply pumping signal between galvanic electrode, specifically: by the first planar rectangular electrode and third planar rectangular electrode
Ground connection, accesses ac-excited signal I on the second planar rectangular electrode；
(2) response signal is detected between voltage electrode, specifically: two pairs of plane interdigital electrode centerings, two planes are measured respectively
Voltage V between interdigital electrode1And V2；
(3) conductivity is calculated, specifically: the conductivity of water bodyIn formula, K is cell constant of conductometric vessel.
6. a kind of side using MEMS electrode formula low conductivity sensor measurement water body conductivity according to claim 5
Method, which is characterized in that V is kept by amplifier feed circuit1And V2Amplitude.
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| CN107185850B (en) * | 2017-06-06 | 2023-04-07 | 浙江大学 | Corn seed activity detection device based on hyperspectral imaging and electrical impedance |
| US10473548B2 (en) * | 2017-08-28 | 2019-11-12 | GM Global Technology Operations LLC | Method and apparatus for detecting presence of a fluid |
| CN107576854B (en) * | 2017-10-12 | 2020-04-03 | 河海大学 | Concentric circle-shaped MEMS low-conductivity sensor with interdigital and application method |
| CN107576855B (en) * | 2017-10-12 | 2020-04-03 | 河海大学 | Low-conductivity microsensor and use method thereof |
| CN113465488B (en) * | 2021-06-17 | 2022-05-17 | 上海交通大学 | Interdigital array device for measuring thickness of liquid film on wall surface and detection method |
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| ES2264646A1 (en) * | 2005-06-24 | 2007-01-01 | Consejo Superior Investigaciones Cientificas | Humidity sensor device based on iron oxide nanoparticles that are supported on sepiolite, production method thereof and applications of same |
| CN104902416A (en) * | 2015-04-28 | 2015-09-09 | 南京航空航天大学 | Interdigital parallel lovewave device structure and batch liquid detection method thereof |
| CN104914316A (en) * | 2015-05-15 | 2015-09-16 | 南昌大学 | Monolithic planar electrode conductivity sensor |
| EP2966034B1 (en) * | 2014-07-09 | 2016-08-31 | Honeywell Romania S.R.L. | Hydrogen sulfide sensor and method |
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| DE602004021679D1 (en) * | 2004-06-30 | 2009-08-06 | St Microelectronics Srl | Inkjet printed active film sensor and method of making the sensor |
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Patent Citations (4)
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|---|---|---|---|---|
| ES2264646A1 (en) * | 2005-06-24 | 2007-01-01 | Consejo Superior Investigaciones Cientificas | Humidity sensor device based on iron oxide nanoparticles that are supported on sepiolite, production method thereof and applications of same |
| EP2966034B1 (en) * | 2014-07-09 | 2016-08-31 | Honeywell Romania S.R.L. | Hydrogen sulfide sensor and method |
| CN104902416A (en) * | 2015-04-28 | 2015-09-09 | 南京航空航天大学 | Interdigital parallel lovewave device structure and batch liquid detection method thereof |
| CN104914316A (en) * | 2015-05-15 | 2015-09-16 | 南昌大学 | Monolithic planar electrode conductivity sensor |
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