CN106463345B - 干法刻蚀掩膜层而不氧化存储单元和源线的方法 - Google Patents

干法刻蚀掩膜层而不氧化存储单元和源线的方法 Download PDF

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CN106463345B
CN106463345B CN201580026524.0A CN201580026524A CN106463345B CN 106463345 B CN106463345 B CN 106463345B CN 201580026524 A CN201580026524 A CN 201580026524A CN 106463345 B CN106463345 B CN 106463345B
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K·阿克塔尔
A·杜塔
A·J·施里恩斯基
S·J·特拉普
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Abstract

本发明的各种实施例涉及在去除掩膜层(106)之前钝化金属线(300，301，302，310)例如CBRAM的存储单元和金属线以防止金属线的氧化的方法。所述方法包括暴露金属线(如铜)以及使金属线与基于氟的刻蚀剂反应从而形成由CuFx构成的保护膜(400)。

Description

干法刻蚀掩膜层而不氧化存储单元和源线的方法
相关申请的交叉引用
本申请要求2014年5月21日提交的美国优先权专利申请 US14/283893的权益，该美国优先权专利申请的每个的全部内容通过引 用并入本文中。
技术领域
本公开的某些实施例涉及干法剥露而不氧化单元和源线的方法。
背景技术
多金属膜正在被积极探求作为可替代的存储技术。正在使用减成 (subtractive)和镶嵌(damascene)两种处理流程开发含铜CBRAM (导电桥接随机存取存储器)单元。CBRAM镶嵌流程利用碳的图案 化、CBRAM单元和铜源线的淀积，随后是化学机械平坦化(CMP) 处理和碳剥露。在常规的碳剥露处理期间，源线和单元中的铜表面暴露 于氧等离子体，并且因此被严重氧化，腐化铜线的结构。在一些实例 中，通过使用盖帽材料或可替换的金属源线来防止氧化。然而，这增大 了源线的电阻率并且需要更为复杂和昂贵的结构及处理集成方案。类似 地，着落在铜膜上的高宽高比的接触在掩膜剥除之后需要毯覆式的低k 阻挡(Barrier Low-k，BLOK)电介质冲压(punch)，以在常规的O2剥除期间保护铜免于氧化。这种BLOK冲压显著地提高了顶关键尺寸 (critical dimension：CD)，并且是在接触CD很小的情形下缩放的关 键障碍。
发明内容
因此，在本领域中对根据本发明的示例性实施例的执行干法剥露而 不氧化铜源线或铜单元且不增大源线的电阻率的方法有需求。
提供用于干法剥露而不氧化铜的方法，基本如附图中所示和/或结 合至少附图之一所述，如权利要求中更完整地陈述的。
从以下连同附图的对本公开的详细描述的回顾，可以理解本公开的 这些和其它特征及优点，在附图中，相同的附图标记始终指代相同的部 分。
附图说明
图1例示了根据本发明的示例性实施例的剥露处理中的第一步骤。
图2例示了根据本发明的示例性实施例的剥露处理中的第二步骤。
图3例示了根据本发明的示例性实施例的剥露处理中的第三步骤。
图4例示了根据本发明的示例性实施例的剥露处理中的第四步骤。
图5例示了根据本发明的示例性实施例的剥露处理中的第五步骤。
图6例示了根据本发明的示例性实施例的剥露处理中的第六步骤。
图7例示了根据本发明的示例性实施例的刻蚀处理中的第一步骤。
图8例示了根据本发明的示例性实施例的刻蚀处理中的第二步骤。
图9例示了根据本发明的示例性实施例的刻蚀处理中的第三步骤。
图10例示了根据本发明的示例性实施例的刻蚀处理中的第四步 骤。
图11例示了根据本发明的示例性实施例的刻蚀处理中的第五步 骤。
具体实施方式
本发明的示例性实施例涉及用于干法剥露而不氧化单元和源线的方 法。根据一个实施例，用应用在干法剥露处理中的基于氟的等离子体步 骤增强典型的镶嵌流程。氟与单元和源线(例如铜单元和铜源线)材料 反应以形成薄的氟化铜(CuFX)膜。氟化铜膜保护铜单元和铜源线材 料免于在基于氧等离子体的碳剥露处理期间氧化。
在典型的镶嵌处理技术中，典型地是氧化物的、通常被称为金属间 电介质(IMD)的电介质层被淀积在半导体表面上方。氧化层被抛光以 获得平坦的上表面。然后执行一系列熟知的处理步骤从而形成在各金属 层之间的互连。镶嵌处理允许形成小的、紧密间距的互连和接触。
图1-6描绘了镶嵌流程中用于剥露碳而不氧化单元和源线的处理。
图1例示了根据本发明的示例性实施例的剥露处理中的第一步骤。 示出装置100，其中装置100包括衬底108，金属接触110使用标准处 理构建到装置100中。碳或下层(UL)电介质层106淀积在衬底108 的顶上。掩膜层104淀积在电介质层106上，而光致抗蚀剂层102淀积 在掩膜层104上且光致抗蚀剂层102被图案化以形成开口105。本领域 的普通技术人员将认识到，层106可以是碳以外的、能够被剥露且不与 氟反应的其它物质。
图2例示了根据本发明的示例性实施例的剥露处理中的第二步骤。 使用图案化的光致抗蚀剂层102刻蚀掩膜层104以在电介质层106中形 成沟槽200。沟槽200暴露金属接触110和衬底108。
图3例示了根据本发明的示例性实施例的剥露处理中的第三步骤。 阻挡衬垫层301被淀积在沟槽200内。阻挡层301可包括但是不限于一 些实施例中的CVD/ALD(化学气相淀积/原子层淀积)氧化物或氮化 物。随后地，在一些实施例中，铜(Cu)单元材料被淀积进沟槽200 以形成单元300，并且另一导电阻挡金属(例如电迁移阻挡金属)层 302被淀积在单元300上，之后另一次淀积铜以形成源线310。阻挡层 301和阻挡层302、单元300和源线310在电介质层106的平面之上具 有过多的材料(overburden)。
图4例示了根据本发明的示例性实施例的剥露处理中的第四步骤。 使用化学机械平坦化(CMP)处理来平坦化过多的材料，使单元300 和源线310的铜表面暴露。
图5例示了根据本发明的示例性实施例的剥露处理中的第五步骤。 在CMP之后，在钝化步骤中，暴露的单元300和源线310与基于氟的 刻蚀剂反应。在剥露或剥除处理之前，可在反应溅射类型的基于等离子 体的处理腔室中执行原位氟反应。根据一些实施例，基于氟的刻蚀剂可 以是CF4、SF6、NF3、CHF3、CH2F2或任何钝化铜的基于氟的化合 物。在这个实施例中，钝化气体被Ar(He)气体以1:2的流量比、40 mTorr下150sccm的总流量稀释。在13.56MHz的感应地耦合的干法刻 蚀腔室中以500W的RF功率生成等离子体。根据本实施例，铜单元 300和源线310暴露于基于氟的等离子体达25秒，不过本领域的普通技 术人员应认识到可适当的使用不同的刻蚀剂和定时。铜暴露于氟导致了 用于单元300和源线310的保护膜400的形成，保护膜400由例如 CuFX组成。保护膜400充当保护单元300和源线310免于氧化的阻 挡。电介质层106也暴露于氟但是氟不与电介质层106的材料(例如碳 或者UL)反应。
图6例示了根据本发明的示例性实施例的剥露处理中的第六步骤。 执行干法剥露，其中使用基于氧的等离子体来剥露电介质层106，其中 保护膜400保护单元300和源线310免于氧化。正常地，基于氧等离子 体的剥露会引起单元300和源线310的氧化。然而，保护膜400不渗透 氧，由此保护单元300和源线310免于氧化。在剥露期间，阻挡层301 保护单元300的侧面免受氧等离子体的影响。
根据一个实施例，在剥露之后，用原位H2、H2-Ar等离子体对着 落于表面的单元材料300上的保护膜400进行溅射清洁。当存在关于氟 与施加到装置100的物质反应的顾虑时，这一步骤可选地在剥露处理之 后执行。
图7-11描绘了根据本发明的示例性实施例的用于刻蚀通孔而不会 有在高宽高比接触刻蚀中的接触关键尺寸(CD)骤升(blowout)的处 理。
图7例示了根据本发明的示例性实施例的刻蚀处理中的第一步骤。 原始的镶嵌处理产生包括铜膜702、阻挡电介质膜704、电介质层706、 具有图案化的光致抗蚀剂层712的掩膜层708和710的装置700。根据 一个实施例，膜704是低k阻挡(BLOK)膜(例如碳化硅/氮化硅)并 且电介质层706是氧化物或氮化物膜。在本实施例中，掩膜层708是碳 掩膜诸如碳聚合物或者下层(UL)掩膜，并且掩膜层710可以是硬掩 膜(HM)或者由标准氧氮化硅组成的电介质抗反射涂层(DARC)。
图8例示了根据本发明的示例性实施例的刻蚀处理中的第二步骤。 通孔800被刻蚀到掩膜层708、电介质层706和阻挡电介质层704中， 暴露铜膜702。
图9例示了刻蚀处理中的第三步骤。通过将基于氟的等离子体施加 到暴露的铜膜702的部分来执行铜钝化。如图1-6中所述，基于氟的化 合物与铜膜702反应以生成保护膜900，由氟化铜(CuFX)化合物形成 的保护膜900充当铜膜702的钝化层。基于氟的刻蚀剂可以是CF4、 SF6、NF3、CHF3、CH2F2或任何钝化铜的基于氟的化合物。在剥露 或剥除处理之前，在处理腔中执行氟钝化反应。在一些实施例中， BLOK刻蚀和钝化步骤被组合起来，其中用基于氟的刻蚀执行的 BLOK刻蚀钝化了铜膜702。
图10例示了根据本发明的示例性实施例的刻蚀处理中的第四步 骤。使用基于氧等离子体的剥露处理剥露掩膜层708，去除掩膜层708 并停止在电介质层706。在掩膜层708的剥露期间，保护膜900防止铜 膜氧化。因为这个处理允许在可选择的掩膜存在的情况下刻蚀阻挡层 (BLOK)，所以保持了接触顶CD的完整性(integrity)。相反，现有 技术要求在阻挡层存在的情况下剥露掩膜以防止铜氧化，之后通过毯覆 式(无掩膜)BLOK冲压以暴露铜层，导致接触顶CD骤升。
图11例示了根据本发明的示例性实施例的刻蚀处理中的第五步 骤。在掩膜层708被剥露以防止氟和其他化合物之间进一步的相互作用 之后，用基于原位H2、H2-Ar等离子体的溅射清洁(sputter clean)任 选地去除保护膜900。
尽管本公开已参照某些实施例描述，本领域的技术人员将理解的 是，在不偏离本公开的范围的情况下，可做出各种改变并可替换各种等 价物。此外，在不偏离本公开的范围情况下，可以对本公开的教导做出 很多修改以适应具体的情境或材料。因此，意图的是，本公开不限于公开的具体的实施例，而是将包括所有落入所附权利要求的范围内的实施例。

Claims (9)

1.一种用于制造存储单元的方法，所述方法包括：
在剥露电介质层之前在不使单元结构和源线氧化的情况下对单元结构和源线执行钝化步骤以防止所述单元结构和源线的氧化，包括：使用钝化所述单元结构和源线的金属层的化合物在所述单元结构和源线上形成保护膜，其中所述化合物是基于氟的化合物，所述电介质层由能够被剥露且不与氟反应的物质组成，所述保护膜从所述化合物与金属层的反应形成，
使用基于氧的等离子体剥露所述电介质层，以及
通过使用原位H2或H2-Ar等离子体执行溅射清洁，去除所述保护膜，以防止所述化合物与后施加的处理的相互作用。
2.根据权利要求1所述的方法，其中所述金属层是铜。
3.根据权利要求1所述的方法，其中所述基于氟的化合物是CF4、SF6、NF3、CHF3和CH2F2之一。
4.根据权利要求1所述的方法，
其中所述钝化步骤是高宽高比接触刻蚀中的钝化步骤，包括执行电介质层、氧化物/氮化物层和阻挡电介质层的刻蚀以暴露金属层，其中使用所述化合物执行所述刻蚀。
5.根据权利要求4所述的方法，其中所述金属层是铜。
6.根据权利要求5所述的方法，其中基于氟的化合物是CF4、SF6、NF3、CHF3和CH2F2之一。
7.根据权利要求4所述的方法，其中通过在所述电介质层存在的情况下同时地执行多层的刻蚀来防止接触关键尺寸骤升。
8.根据权利要求4所述的方法，其中氧化物层是低k阻挡BLOK膜。
9.根据权利要求8所述的方法，其中所述BLOK膜是淀积在所述金属层上的膜并且比所述金属层薄。
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