CN106449811A - 生长在GaAs衬底上n‑InGaAs薄膜及其制备方法 - Google Patents
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Abstract
本发明公开了生长在GaAs衬底上n‑InGaAs薄膜,由下至上依次包括GaAs衬底和n个δ掺杂区;所述δ掺杂区由下至上包括InGaAs本征薄膜和δ掺杂InGaAs薄膜;δ掺杂InGaAs薄膜为Si掺杂的InGaAs薄膜;所述n≥1。本发明还公开了上述n‑InGaAs薄膜的制备方法。本发明的n‑InGaAs薄膜的Si掺杂剂在薄膜中呈现脉冲式分布,有效地抑制Si的自补偿效应,提高掺杂效率、电子迁移率及晶体质量。
Description
技术领域
本发明涉及InGaAs薄膜,特别涉及生长在GaAs衬底上n-InGaAs薄膜及其制备方法。
背景技术
由于InxGa1-xAs材料具有禁带宽度连续可调、载流子迁移率高等优点,是十分理想的多结太阳能电池材料。目前,科研工作者已经成功在GaAs衬底上制备出InGaP/GaAs/InGaAs结构的三结太阳能电池,但是对于InGaAs底电池的掺杂仍有很多问题需要解决。常用的n型掺杂剂Sn由于会产生表面分凝现象,获得突变的杂质分布十分困难。还有一种可选的掺杂剂是Ge。但是Ge是非常强烈的双性掺杂剂,因为在引入Ge的情况下仅仅通过改变衬底温度和V/III比就可以生长出相反极性的GaAs薄膜。之后,科研人员发现另一种IV族元素Si能够克服上述掺杂剂的大部分短板:Si有一致性的粘附系数而不会产生表面分凝,易于获得突变的杂质分布;Si掺杂剂对生长条件的变化不敏感,掺杂工艺要求较低。对于高电子迁移率晶体管等GaAs基半导体器件而言,需要一个载流子浓度极高(>1019cm-3)的掺杂层来实现器件的功能。但是,当Si重掺杂载流子浓度到达1018cm-3数量级时,会产生非常严重的自补偿效应,从而导致载流子浓度无法进一步提高,并且载流子迁移速下降。重掺杂还会造成晶体质量的急剧下降,从而对器件性能造成恶劣的影响。
传统的In0.3Ga0.7As薄膜掺杂工艺而言,一般是通过调整V/III比、掺杂源温度、生长速度和外延温度等条件来控制生长过程中的参数。或者是在外延生长前先对衬底进行处理,例如预掺杂一层杂质层。而对于外延后的薄膜,还可以选择进行退火、杂质离子激活等手段进行进一步处理。
发明内容
为了克服现有技术的上述缺点与不足,本发明的目的在于提供一种生长在GaAs衬底上n-InGaAs薄膜,Si掺杂剂在薄膜中呈现脉冲式分布,有效地抑制Si的自补偿效应,提高掺杂效率、电子迁移率及晶体质量。
本发明的另一目的在于提供上述生长在GaAs衬底上n-InGaAs薄膜的制备方法。
本发明的目的通过以下技术方案实现:
生长在GaAs衬底上n-InGaAs薄膜,由下至上依次包括GaAs衬底和n个δ掺杂区;所述δ掺杂区由下至上包括InGaAs本征薄膜和δ掺杂InGaAs薄膜;δ掺杂InGaAs薄膜为Si掺杂的InGaAs薄膜;所述n≥1。
所述的Si掺杂的InGaAs薄膜,掺杂浓度为4.0×1011~6×1012cm-2。
所述InGaAs本征薄膜的厚度为1~10nm。
所述δ掺杂InGaAs薄膜的厚度为0.1~0.3nm。
生长在GaAs衬底上n-InGaAs薄膜的制备方法,包括以下步骤:
(1)GaAs衬底清洗;
(2)GaAs衬底预除气处理;
(3)GaAs衬底脱氧化膜;
(4)InGaAs本征薄膜的生长:GaAs衬底温度为500~580℃,在反应室真空度为4.0×10-5~2.7×10-8Pa条件下,保持III、V族源开启,In源温度在700~830℃、Ga源温度在900~1050℃、As源温度在250~310℃、生长速率为0.6~1ML/s条件下,生长厚度为1~10nm的InGaAs本征薄膜;
(5)δ掺杂InGaAs薄膜:GaAs衬底温度为500~580℃,在反应室真空度为4.0×10-5~2.7×10-8Pa条件下,关闭In与Ga的源炉,在As源温度为250~310℃、Si源温度为1000~1250℃的条件下,以0.01~0.05ML/s的生长速率生长厚度为0.1~0.3nm的δ掺杂InGaAs层。
所述的生长在GaAs衬底上n-InGaAs薄膜的制备方法,还包括以下步骤:
(6)重复步骤(4)~(5)多次。
步骤(1)所述GaAs衬底清洗,具体为:
经过丙酮、去离子水洗涤,去除衬底表面有机物;将GaAs衬底置于H2O2:H2O:H2SO4=1:1:5溶液中超声1~10分钟,之后经去离子水清洗去除表面氧化物;清洗后的GaAs衬底用高纯氮气吹干。
步骤(2)所述GaAs衬底预除气处理,具体为:
GaAs衬底送入分子束外延进样室预除气15~30分钟;再送入传递室300~400℃除气0.5~2小时,完成除气后送入生长室。
步骤(3)所述GaAs衬底脱氧化膜,具体为:
GaAs衬底进入生长室后,将衬底温度升至550~650℃,高温烘烤15~30分钟,除去衬底表面的氧化膜层。
与现有技术相比,本发明具有以下优点和有益效果:
(1)本发明的生长在GaAs衬底上n-InGaAs薄膜,Si掺杂剂在薄膜中呈现脉冲式分布,有效地抑制Si的自补偿效应,提高掺杂效率、电子迁移率及晶体质量。
(2)本发明的生长在GaAs衬底上n-InGaAs薄膜,能够有效降低n-InGaAs生长过程中受到的应力,抑制失配位错的形成,提高GaAs外延膜的晶体质量。
(3)本发明的生长在GaAs衬底上n-InGaAs薄膜的制备方法,通过在掺杂时关闭III族源,保持V族源开启同步打开掺杂源Si,实现Si掺杂剂在薄膜中呈现脉冲式分布,有效地抑制Si的自补偿效应。
附图说明
图1为本发明的实施例1的n-InGaAs薄膜的结构示意图。
图2为本发明的实施例1的n-InGaAs薄膜的原子力显微镜表面形貌图。
具体实施方式
下面结合实施例,对本发明作进一步地详细说明,但本发明的实施方式不限于此。
实施例1
本实施例的生长在GaAs衬底上n-InGaAs薄膜的制备方法,包括以下步骤:
(1)GaAs衬底清洗:
经过丙酮、去离子水洗涤,去除衬底表面有机物;将GaAs衬底置于H2O2:H2O:H2SO4=1:1:5溶液中超声1分钟,之后经去离子水清洗去除表面氧化物;清洗后的GaAs衬底用高纯氮气吹干。
(2)GaAs衬底预除气处理:
步骤(2)所述GaAs衬底预除气处理,具体为:
GaAs衬底送入分子束外延进样室预除气15分钟;再送入传递室300℃除气0.5小时,完成除气后送入生长室。
(3)GaAs衬底脱氧化膜:
GaAs衬底进入生长室后,将衬底温度升至550℃,高温烘烤15分钟,除去衬底表面的氧化膜层。
(4)InGaAs本征薄膜的生长:GaAs衬底温度为500℃,在反应室真空度为4.0×10- 5Pa条件下,保持III、V族源开启,In源温度在700℃、Ga源温度在900℃、As源温度在250℃、生长速率为0.6ML/s条件下,生长厚度为1nm的InGaAs本征薄膜;
(5)δ掺杂InGaAs薄膜:GaAs衬底温度为500℃,在反应室真空度为4.0×10-5Pa条件下,关闭In与Ga的源炉,在As源温度为250℃、Si源温度为1000℃的条件下,以0.01ML/s的生长速度生长厚度为0.1nm的δ掺杂InGaAs层;所述的Si掺杂的InGaAs薄膜掺杂浓度达到4.0×1011cm-2。
(6)重复步骤(4)~(5)多次。
本实施例的n-InGaAs薄膜材料可采用分子束外延或金属有机气相沉积方法来制得。
如图1所示,本实施例制备得到的生长在GaAs衬底上n-InGaAs薄膜14由下至上依次包括GaAs衬底11和n个δ掺杂区;所述δ掺杂区由下至上包括InGaAs本征薄膜12和δ掺杂InGaAs薄膜13;δ掺杂InGaAs薄膜为Si掺杂的InGaAs薄膜;所述n≥1。
图2为本实施例制备的n-InGaAs薄膜的原子力显微镜表面形貌图,从图2中可以看出,应用本发明生长出的n-InGaAs外延薄膜,相较于用传统方法得到的n-InGaAs,晶体质量高,其(111)面X-射线摇摆曲线的半峰宽为1886弧秒。并且n-InGaAs表面十分平整,均方表面粗糙度为3.1nm。薄膜的电子迁移率达到650cm2/Vs。
实施例2
本实施例的生长在GaAs衬底上n-InGaAs薄膜的制备方法,包括以下步骤:
(1)GaAs衬底清洗:
经过丙酮、去离子水洗涤,去除衬底表面有机物;将GaAs衬底置于H2O2:H2O:H2SO4=1:1:5溶液中超声10分钟,之后经去离子水清洗去除表面氧化物;清洗后的GaAs衬底用高纯氮气吹干。
(2)GaAs衬底预除气处理:
步骤(2)所述GaAs衬底预除气处理,具体为:
GaAs衬底送入分子束外延进样室预除气30分钟;再送入传递室400℃除气2小时,完成除气后送入生长室。
(3)GaAs衬底脱氧化膜:
GaAs衬底进入生长室后,将衬底温度升至650℃,高温烘烤30分钟,除去衬底表面的氧化膜层。
(4)InGaAs本征薄膜的生长:GaAs衬底温度为580℃,在反应室真空度为2.7×10- 8Pa条件下,保持III、V族源开启,In源温度在830℃、Ga源温度在1050℃、As源温度在310℃、生长速率为1ML/s条件下,生长厚度为10nm的InGaAs本征薄膜;
(5)δ掺杂InGaAs薄膜:GaAs衬底温度为500~580℃,在反应室真空度为2.7×10- 8Pa条件下,关闭In与Ga的源炉,在As源温度为310℃、Si源温度为1250℃的条件下,以0.05ML/s的生长速度生长厚度为0.3nm的δ掺杂InGaAs层;所述的Si掺杂的InGaAs薄膜掺杂浓度达到6×1012cm-2。
(6)重复步骤(4)~(5)多次。
本实施例制备得到的n-InGaAs薄膜的测试结果与实施例1类似,在此不再赘述。
上述实施例为本发明较佳的实施方式,但本发明的实施方式并不受所述实施例的限制,其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化,均应为等效的置换方式,都包含在本发明的保护范围之内。
Claims (9)
1.生长在GaAs衬底上n-InGaAs薄膜,其特征在于,由下至上依次包括GaAs衬底和n个δ掺杂区;所述δ掺杂区由下至上包括InGaAs本征薄膜和δ掺杂InGaAs薄膜;δ掺杂InGaAs薄膜为Si掺杂的InGaAs薄膜;所述n≥1。
2.根据权利要求1所述的生长在GaAs衬底上n-InGaAs薄膜,其特征在于,所述的Si掺杂的InGaAs薄膜,掺杂浓度为4.0×1011~6×1012cm-2。
3.根据权利要求1所述的生长在GaAs衬底上n-InGaAs薄膜,其特征在于,所述InGaAs本征薄膜的厚度为1~10nm。
4.根据权利要求1所述的生长在GaAs衬底上n-InGaAs薄膜,其特征在于,所述δ掺杂InGaAs薄膜的厚度为0.1~0.3nm。
5.生长在GaAs衬底上n-InGaAs薄膜的制备方法,其特征在于,包括以下步骤:
(1)GaAs衬底清洗;
(2)GaAs衬底预除气处理;
(3)GaAs衬底脱氧化膜;
(4)InGaAs本征薄膜的生长:GaAs衬底温度为500~580℃,在反应室真空度为4.0×10-5~2.7×10-8Pa条件下,保持III、V族源开启,In源温度在700~830℃、Ga源温度在900~1050℃、As源温度在250~310℃、生长速率为0.6~1ML/s条件下,生长厚度为1~10nm的InGaAs本征薄膜;
(5)δ掺杂InGaAs薄膜:GaAs衬底温度为500~580℃,在反应室真空度为4.0×10-5~2.7×10-8Pa条件下,关闭In与Ga的源炉,在As源温度为250~310℃、Si源温度为1000~1250℃的条件下,以0.01~0.05ML/s的生长速率生长厚度为0.1~0.3nm的δ掺杂InGaAs层。
6.根据权利要求5所述的生长在GaAs衬底上n-InGaAs薄膜的制备方法,其特征在于,还包括以下步骤:
(6)重复步骤(4)~(5)多次。
7.根据权利要求5所述的生长在GaAs衬底上n-InGaAs薄膜的制备方法,其特征在于,步骤(1)所述GaAs衬底清洗,具体为:
经过丙酮、去离子水洗涤,去除衬底表面有机物;将GaAs衬底置于H2O2:H2O:H2SO4=1:1:5溶液中超声1~10分钟,之后经去离子水清洗去除表面氧化物;清洗后的GaAs衬底用高纯氮气吹干。
8.根据权利要求5所述的生长在GaAs衬底上n-InGaAs薄膜的制备方法,其特征在于,步骤(2)所述GaAs衬底预除气处理,具体为:
GaAs衬底送入分子束外延进样室预除气15~30分钟;再送入传递室300~400℃除气0.5~2小时,完成除气后送入生长室。
9.根据权利要求5所述的生长在GaAs衬底上n-InGaAs薄膜的制备方法,其特征在于,步骤(3)所述GaAs衬底脱氧化膜,具体为:
GaAs衬底进入生长室后,将衬底温度升至550~650℃,高温烘烤15~30分钟,除去衬底表面的氧化膜层。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101661878A (zh) * | 2009-09-08 | 2010-03-03 | 中山大学 | 一种双元素delta掺杂生长P型GaN基材料的方法 |
CN103346220A (zh) * | 2013-06-28 | 2013-10-09 | 湘能华磊光电股份有限公司 | GaN基LED及其生产方法 |
CN103996759A (zh) * | 2014-06-13 | 2014-08-20 | 湘能华磊光电股份有限公司 | Led外延层生长方法及led外延层 |
CN105355668A (zh) * | 2015-10-30 | 2016-02-24 | 华南理工大学 | 一种具有非晶态缓冲层结构的In0.3Ga0.7As电池及制备方法 |
-
2016
- 2016-10-28 CN CN201610966099.XA patent/CN106449811A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101661878A (zh) * | 2009-09-08 | 2010-03-03 | 中山大学 | 一种双元素delta掺杂生长P型GaN基材料的方法 |
CN103346220A (zh) * | 2013-06-28 | 2013-10-09 | 湘能华磊光电股份有限公司 | GaN基LED及其生产方法 |
CN103996759A (zh) * | 2014-06-13 | 2014-08-20 | 湘能华磊光电股份有限公司 | Led外延层生长方法及led外延层 |
CN105355668A (zh) * | 2015-10-30 | 2016-02-24 | 华南理工大学 | 一种具有非晶态缓冲层结构的In0.3Ga0.7As电池及制备方法 |
Non-Patent Citations (2)
Title |
---|
E.F.SCHUBERT: ""Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K"", 《SOLID STATE COMMUNICATIONS》 * |
刑艳辉: ""p型氮化镓不同掺杂方法研究"", 《功能材料》 * |
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