CN106449403B - 一种大功率igbt器件的制造方法 - Google Patents
一种大功率igbt器件的制造方法 Download PDFInfo
- Publication number
- CN106449403B CN106449403B CN201611029456.6A CN201611029456A CN106449403B CN 106449403 B CN106449403 B CN 106449403B CN 201611029456 A CN201611029456 A CN 201611029456A CN 106449403 B CN106449403 B CN 106449403B
- Authority
- CN
- China
- Prior art keywords
- slide glass
- metal slide
- injection
- chip
- igbt device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000011521 glass Substances 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 23
- 230000017525 heat dissipation Effects 0.000 claims abstract description 16
- 239000004519 grease Substances 0.000 claims abstract description 11
- 239000013528 metallic particle Substances 0.000 claims abstract description 5
- 238000005266 casting Methods 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 15
- 229920005989 resin Polymers 0.000 claims description 15
- 230000005855 radiation Effects 0.000 claims description 10
- 229920001296 polysiloxane Polymers 0.000 claims description 6
- 238000005452 bending Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 238000001816 cooling Methods 0.000 abstract description 3
- 239000012530 fluid Substances 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611029456.6A CN106449403B (zh) | 2016-11-22 | 2016-11-22 | 一种大功率igbt器件的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611029456.6A CN106449403B (zh) | 2016-11-22 | 2016-11-22 | 一种大功率igbt器件的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106449403A CN106449403A (zh) | 2017-02-22 |
CN106449403B true CN106449403B (zh) | 2019-06-28 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201611029456.6A Active CN106449403B (zh) | 2016-11-22 | 2016-11-22 | 一种大功率igbt器件的制造方法 |
Country Status (1)
Country | Link |
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CN (1) | CN106449403B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017003854A1 (de) * | 2017-04-20 | 2018-10-25 | Leopold Kostal Gmbh & Co. Kg | Gehäuse für ein elektrisches oder elektronisches Gerät |
JP7218113B2 (ja) * | 2018-07-11 | 2023-02-06 | 台湾東電化股▲ふん▼有限公司 | レンズ駆動装置 |
CN113284945B (zh) * | 2021-04-13 | 2022-07-29 | 武汉华星光电半导体显示技术有限公司 | 薄膜晶体管及制备方法、显示基板 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9599586B2 (en) * | 2012-08-27 | 2017-03-21 | Infineon Technologies Ag | Ion sensor |
JP6202108B2 (ja) * | 2014-01-21 | 2017-09-27 | 富士通株式会社 | 放熱部品、放熱部品の製造方法、電子装置、電子装置の製造方法、一体型モジュール、情報処理システム |
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2016
- 2016-11-22 CN CN201611029456.6A patent/CN106449403B/zh active Active
Also Published As
Publication number | Publication date |
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CN106449403A (zh) | 2017-02-22 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20190529 Address after: 266000 Building 622, No. 6, South Great Wall Road, Chengyang District, Qingdao City, Shandong Province Applicant after: QINGDAO JIAEN SEMICONDUCTOR Co.,Ltd. Address before: 226300 window of science and technology, No. 266, New Century Avenue, Nantong hi tech Zone, Nantong, Jiangsu Applicant before: NANTONG WOTE OPTOELECTRONICS TECHNOLOGY CO.,LTD. |
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TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A manufacturing method of high power IGBT device Effective date of registration: 20201116 Granted publication date: 20190628 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: QINGDAO JIAEN SEMICONDUCTOR Co.,Ltd. Registration number: Y2020990001351 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20211109 Granted publication date: 20190628 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: QINGDAO JIAEN SEMICONDUCTOR Co.,Ltd. Registration number: Y2020990001351 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A manufacturing method of high power IGBT device Effective date of registration: 20211111 Granted publication date: 20190628 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: QINGDAO JIAEN SEMICONDUCTOR Co.,Ltd. Registration number: Y2021370010118 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20221128 Granted publication date: 20190628 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: QINGDAO JIAEN SEMICONDUCTOR Co.,Ltd. Registration number: Y2021370010118 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right |