CN106340498A - Packaging structure with electromagnetic shielding grounding function and manufacturing method thereof - Google Patents
Packaging structure with electromagnetic shielding grounding function and manufacturing method thereof Download PDFInfo
- Publication number
- CN106340498A CN106340498A CN201610914058.6A CN201610914058A CN106340498A CN 106340498 A CN106340498 A CN 106340498A CN 201610914058 A CN201610914058 A CN 201610914058A CN 106340498 A CN106340498 A CN 106340498A
- Authority
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- China
- Prior art keywords
- sheet material
- electromagnetic shielding
- chip
- grounding function
- substrate
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Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000004806 packaging method and process Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000011889 copper foil Substances 0.000 claims abstract description 20
- 229910000679 solder Inorganic materials 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 39
- 239000005022 packaging material Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 5
- 238000005476 soldering Methods 0.000 claims description 4
- 210000004027 cell Anatomy 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000007772 electroless plating Methods 0.000 claims description 3
- 238000005868 electrolysis reaction Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 238000004080 punching Methods 0.000 claims description 3
- 238000010079 rubber tapping Methods 0.000 claims description 3
- 239000011265 semifinished product Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 abstract 2
- 239000012790 adhesive layer Substances 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
Abstract
The invention relates to a packaging structure with electromagnetic shielding grounding function and a manufacturing method thereof. The structure comprises a substrate (1), of which the front side is mounted with a plate sheet (2), which comprises an adhesive layer (2.1), a non-conductive dielectric layer (2.2) and a copper foil (2.3), wherein the copper foil (2.3) is connected with the ground line (1.1) of the substrate (1), and the plate sheet (2) is provided with an opening (3). A chip (4) is arranged above the opening (3), the back of the chip (4) is connected with the substrate (1) through a plurality of solder bumps (5), and the outer surface of the chip (4) is encapsulated with plastic (6). The side surface of the substrate (1), the side surface of the plate sheet (2) and the outer surface of the plastic (6) are covered with a shielding metallic layer (7). The packaging structure with electromagnetic shielding grounding function and the manufacturing method thereof solve the problem of poor grounding effect in the prior art, the production efficiency is improved the process is simplified, and excellent electromagnetic shielding effect can be ensured.
Description
Technical field
The present invention relates to a kind of encapsulating structure with electromagnetic shielding grounding function and its manufacture method, belong to semiconductor package
Dress technical field.
Background technology
Because radio frequency package structure is easily subject to extraneous electromagnetic interference, when it is mounted on circuit boards, should be especially
Note mutual interference, in order to avoid running occurs extremely.In order to reach the effect of shielding, shield assembly is set above chip,
And shield assembly is grounded, thus can shield chip in order to avoid being subject to extraneous electromagnetic interference.The mode of shield assembly ground connection has
Multiple, have as shown in figure 1, arranging multiple earth conductors 40, screen layer 70 in surface, screen layer 70 and earth conductor 40 connect
Touch, and be grounded, electromagnetic shielding is carried out with this, in this structure, earth conductor is to be placed on one by one on substrate, and the activity duration is relatively
Long, and earth conductor is with tin cream or conducting resinl, is formed by Reflow Soldering or after being heating and curing, it is possible to create height
Degree is variant, leads to may not cut to corresponding position when cutting, this will make screen layer and earth conductor connect
Touch bad, screen layer cannot be grounded, and certainly have impact on function of shielding.
Content of the invention
The technical problem to be solved is to provide one kind to have electromagnetic shielding ground connection work(for above-mentioned prior art
The encapsulating structure of energy and its manufacture method, it can solve the problem that the bad problem of earthing effect in prior art, can improve production effect
Rate, Simplified flowsheet, plays good effectiveness.
The present invention the adopted technical scheme that solves the above problems is: a kind of encapsulation knot with electromagnetic shielding grounding function
Structure, it includes substrate, and described substrate includes ground path, and described substrate front side is pasted with sheet material, described sheet material include from upper and
Under the viscosity glue-line, nonconductive dielectric layer and the copper foil layer that are sequentially arranged, described copper foil layer is connected with ground path, described sheet material
On be provided with perforate, above described perforate set up have chip, described chip front side is connected with substrate by multiple solder bumps,
Described chip periphery is encapsulated with plastic packaging material, and described substrate side surfaces, side face of plate material and plastic packaging material outer surface are all coated with shielding gold
Belong to layer, described shielding metal level is connected with copper foil layer side.
It is filled with plastic packaging material in described perforate.
A kind of manufacture method of the encapsulating structure with electromagnetic shielding grounding function, the method comprising the steps of:
Step one, take a sheet material, described sheet material has three layers, ground floor is viscosity glue, middle one layer is non-conductive medium, under
One layer of face is Copper Foil;
Step 2, the sheet material in step one is done perforate process;
Step 3, chip upside down is mounted on tapping, chip lower surface edge is fitted with perforate top surface edge, chip front side
There is the solder bump made;
Step 4, by full wafer sheet material and baseplate-laminating, and so that solder bump is connected with electrical property of substrate by reflow soldering process, and base
Ground path on plate is electrically connected with the Copper Foil of sheet material, forms ground structure;
Step 5, chip periphery carry out plastic packaging material encapsulating;
Step 6, by encapsulating after semi-finished product cut into single unit;
Step 7, single cell surface after cutting is covered shielding metal level.
Four angles of the sheet material in step one and marginal area have the telltale mark point for identification.
Described telltale mark point is square, cross or trapezoidal.
Described perforate processing mode is radium-shine mode, mechanical punching mode or etching mode.
The size being smaller in size than objective chip in described hole.
Described hole is in that matrix-style arranges.
Described sheet material is conducting resinl bonding mode, solder connection mode or mechanical snap connection side with the mode of baseplate-laminating
Formula.
Described cover shielding metal level mode be chemical vapor deposition, electroless plating, electrolysis plating, spraying, printing or
The process of sputter.
Compared with prior art, it is an advantage of the current invention that:
1st, it is used for the Copper Foil of ground connection by the cohesive material bonding between plastic packaging material and substrate, it is to avoid in cutting because cutting stress
Lead to be grounded the probability that copper billet is peeled off, reduce and lead to the bad problem of shield effectiveness because of imperfect earth;
2nd, using first pasting chip, mount monoblock Copper Foil afterwards, the then mode of integral back-flow, raising efficiency, thus reduce life
Produce cost;
3rd, the present invention is also easy to realize the mode of chip bottom cavity and chip underfill, wherein the cavity mode of chip bottom
Can be used for a kind of encapsulation of saw sensor;
4th, full wafer sheet material and entire substrate are fitted, can Simplified flowsheet, material-saving and time;
5th, earth conductor does not need single to be configured, and is integrally formed, and improves efficiency, increases product reliability.
Brief description
Fig. 1 is a kind of schematic diagram of existing shield assembly earthing mode.
Fig. 2 is a kind of schematic diagram of the encapsulating structure with electromagnetic shielding grounding function of the present invention.
Fig. 3 is a kind of schematic diagram of another embodiment of encapsulating structure with electromagnetic shielding grounding function of the present invention.
Fig. 4 ~ Figure 10 is a kind of each operation of the manufacture method of the encapsulating structure with electromagnetic shielding grounding function of the present invention
Flow chart.
Figure 11, Figure 12 are that on a kind of substrate of the encapsulating structure with electromagnetic shielding grounding function of the present invention, each unit connects
The schematic diagram of ground circuit design.
Wherein:
Substrate 1
Ground path 1.1
Sheet material 2
Viscosity glue-line 2.1
Nonconductive dielectric layer 2.2
Copper foil layer 2.3
Perforate 3
Chip 4
Solder bump 5
Plastic packaging material 6
Shielding metal level 7
Ground path 8.
Specific embodiment
Below in conjunction with accompanying drawing embodiment, the present invention is described in further detail.
As shown in Fig. 2 one of the present embodiment has the encapsulating structure of electromagnetic shielding grounding function, it includes substrate 1,
Described substrate 1 includes ground path 1.1, and described substrate 1 front is pasted with sheet material 2, and described sheet material 2 includes from top to bottom cloth successively
Viscosity glue-line 2.1, nonconductive dielectric layer 2.2 and the copper foil layer 2.3 put, described copper foil layer 2.3 is connected with ground path 1.1,
Perforate 3 is provided with described sheet material 2, described perforate 3 top sets up chip 4, and multiple solder bumps are passed through at described chip 4 back side
5 are connected with substrate 1, and described chip 4 periphery is encapsulated with plastic packaging material 6, described substrate 1 and sheet material 2 side and plastic packaging material 6 appearance
Face is all coated with shielding metal level 7, and described shielding metal level 7 is connected with copper foil layer 2.3 side.
As shown in figure 3, being filled with plastic packaging material 6 in perforate 3 in the present embodiment.
Its manufacture method is as follows:
Step one, referring to Fig. 4, take a special sheet material, it has three layers, ground floor is viscosity glue, middle one layer is non-conductive
Medium (has certain elasticity), and bottom one layer is Copper Foil;Four angles of this sheet material and marginal area have determining for identification
Position labelling point, this telltale mark point can be square, cross or the shape such as trapezoidal;
Step 2, referring to Fig. 5, the sheet material in step one is done perforate and processes, processing mode can be radium-shine mode, mechanical punching side
Formula or etching mode, its hole be smaller in size than chip size;
Described hole is in that matrix-style arranges;
Step 3, referring to Fig. 6, chip upside down is mounted on tapping, chip lower surface edge is fitted with bore edges, chip front side
There is the solder bump made;
Step 4, referring to Fig. 7, full wafer sheet material and baseplate-laminating make solder bump with electrical property of substrate even by reflow soldering process
Connect, and the ground path on substrate is electrically connected with the Copper Foil of sheet material, form ground structure;
Ground path design on described substrate can be loop configuration continuous around single product circuit, referring to Figure 11;Or
Scattered shape around single product circuit of person, can be rectangle, circular, oval and irregular shape, and quantity is permissible
Single or multiple, referring to Figure 12;
Step 5, referring to Fig. 8, chip periphery carries out plastic packaging material encapsulating;
If chip bottom needs filling, need to be slotted on sheet material, in order to the flowing of plastic packaging material;As fruit chip
Bottom needs to keep cavity structure, then need not do slot treatment on sheet material;
Step 6, referring to Fig. 9, the semi-finished product after encapsulating are cut into single unit, sheet material is exposed in side;
Step 7, referring to Figure 10, single cell surface after cutting is covered shielding metal level, shielding metal level can for gold, silver,
The combination of copper, nickel, chromium, stannum, aluminum etc. or more various metals material, its bonding passes through the earth lead of side face of plate material and substrate
Realizing, coverage mode can be the technique sides such as chemical vapor deposition, electroless plating, electrolysis plating, spraying, printing or sputter on road
Method.
In addition to the implementation, present invention additionally comprises there being other embodiment, all employing equivalents or equivalence replacement
The technical scheme that mode is formed, all should fall within the scope of the hereto appended claims.
Claims (10)
1. a kind of encapsulating structure with electromagnetic shielding grounding function it is characterised in that: it includes substrate (1), described substrate (1)
Including ground path (1.1), described substrate (1) front is pasted with sheet material (2), and described sheet material (2) includes from top to bottom cloth successively
Viscosity glue-line (2.1), nonconductive dielectric layer (2.2) and the copper foil layer (2.3) put, described copper foil layer (2.3) and ground path
(1.1) it is connected, described sheet material (2) is provided with perforate (3), setting up above described perforate (3) has chip (4), described chip
(4) back side is connected with substrate (1) by multiple solder bumps (5), and described chip (4) periphery is encapsulated with plastic packaging material (6), described
Substrate (1) side, sheet material (2) side and plastic packaging material (6) outer surface are all coated with shielding metal level (7), described shielding metal
Layer (7) is connected with copper foil layer (2.3) side.
2. a kind of encapsulating structure with electromagnetic shielding grounding function according to claim 1 it is characterised in that: described open
It is filled with plastic packaging material (6) in hole (3).
3. a kind of manufacture method of the encapsulating structure with electromagnetic shielding grounding function it is characterised in that methods described include following
Step:
Step one, take a sheet material, described sheet material has three layers, ground floor is viscosity glue, middle one layer is non-conductive medium, under
One layer of face is Copper Foil;
Step 2, the sheet material in step one is done perforate process;
Step 3, chip upside down is mounted on tapping, chip lower surface edge is fitted with bore edges, and chip front side is made
Solder bump;
Step 4, by full wafer sheet material and baseplate-laminating, and so that solder bump is connected with electrical property of substrate by reflow soldering process, and base
Ground path on plate is electrically connected with the Copper Foil of sheet material, forms ground structure;
Step 5, chip periphery carry out plastic packaging material encapsulating;
Step 6, by encapsulating after semi-finished product cut into single unit;
Step 7, single cell surface after cutting is covered shielding metal level.
4. the manufacture method of a kind of encapsulating structure with electromagnetic shielding grounding function according to claim 3, its feature
It is: four angles of the sheet material in step one and marginal area have the telltale mark point for identification.
5. the manufacture method of a kind of encapsulating structure with electromagnetic shielding grounding function according to claim 4, its feature
It is: described telltale mark point is square, cross or trapezoidal.
6. the manufacture method of a kind of encapsulating structure with electromagnetic shielding grounding function according to claim 3, its feature
It is: described perforate processing mode is radium-shine mode, mechanical punching mode or etching mode.
7. the manufacture method of a kind of encapsulating structure with electromagnetic shielding grounding function according to claim 3, its feature
It is: the size in described hole need to be less than objective chip size.
8. the manufacture method of a kind of encapsulating structure with electromagnetic shielding grounding function according to claim 3, its feature
It is: described hole is in that matrix-style arranges.
9. the manufacture method of a kind of encapsulating structure with electromagnetic shielding grounding function according to claim 3, its feature
It is: described sheet material is conducting resinl bonding mode, solder connection mode or mechanical snap connected mode with the mode of baseplate-laminating.
10. the manufacture method of a kind of encapsulating structure with electromagnetic shielding grounding function according to claim 3, its feature
It is: described coverage mode is chemical vapor deposition, electroless plating, electrolysis plating, the process of spraying, printing or sputter.
Priority Applications (1)
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CN201610914058.6A CN106340498B (en) | 2016-10-20 | 2016-10-20 | A kind of encapsulating structure and its manufacturing method with electromagnetic shielding grounding function |
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CN201610914058.6A CN106340498B (en) | 2016-10-20 | 2016-10-20 | A kind of encapsulating structure and its manufacturing method with electromagnetic shielding grounding function |
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CN106340498A true CN106340498A (en) | 2017-01-18 |
CN106340498B CN106340498B (en) | 2018-11-09 |
Family
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109449127A (en) * | 2018-12-24 | 2019-03-08 | 歌尔股份有限公司 | The packaging technology and encapsulating structure of chip |
CN110099509A (en) * | 2019-04-08 | 2019-08-06 | Oppo广东移动通信有限公司 | Circuit board and electronic equipment |
CN110610906A (en) * | 2019-09-24 | 2019-12-24 | 深圳佰维存储科技股份有限公司 | Semiconductor electromagnetic shielding structure and manufacturing method thereof |
CN110676249A (en) * | 2019-09-29 | 2020-01-10 | 江苏长电科技股份有限公司 | Packaging structure of cavity device |
CN112714606A (en) * | 2020-12-29 | 2021-04-27 | 安徽盛世天朗软件科技有限公司 | Data transmission electromagnetic interference prevention device for network equipment and implementation method thereof |
CN112908963A (en) * | 2021-01-19 | 2021-06-04 | 青岛歌尔智能传感器有限公司 | Substrate structure, preparation method and electronic product |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109449127A (en) * | 2018-12-24 | 2019-03-08 | 歌尔股份有限公司 | The packaging technology and encapsulating structure of chip |
CN110099509A (en) * | 2019-04-08 | 2019-08-06 | Oppo广东移动通信有限公司 | Circuit board and electronic equipment |
CN110610906A (en) * | 2019-09-24 | 2019-12-24 | 深圳佰维存储科技股份有限公司 | Semiconductor electromagnetic shielding structure and manufacturing method thereof |
CN110676249A (en) * | 2019-09-29 | 2020-01-10 | 江苏长电科技股份有限公司 | Packaging structure of cavity device |
CN112714606A (en) * | 2020-12-29 | 2021-04-27 | 安徽盛世天朗软件科技有限公司 | Data transmission electromagnetic interference prevention device for network equipment and implementation method thereof |
CN112908963A (en) * | 2021-01-19 | 2021-06-04 | 青岛歌尔智能传感器有限公司 | Substrate structure, preparation method and electronic product |
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Publication number | Publication date |
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CN106340498B (en) | 2018-11-09 |
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