CN1063289C - 绝缘层上有硅的动态随机存取存储器及其制作方法 - Google Patents
绝缘层上有硅的动态随机存取存储器及其制作方法 Download PDFInfo
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- CN1063289C CN1063289C CN97102121A CN97102121A CN1063289C CN 1063289 C CN1063289 C CN 1063289C CN 97102121 A CN97102121 A CN 97102121A CN 97102121 A CN97102121 A CN 97102121A CN 1063289 C CN1063289 C CN 1063289C
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Abstract
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Claims (14)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN97102121A CN1063289C (zh) | 1997-01-09 | 1997-01-09 | 绝缘层上有硅的动态随机存取存储器及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN97102121A CN1063289C (zh) | 1997-01-09 | 1997-01-09 | 绝缘层上有硅的动态随机存取存储器及其制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN1187693A CN1187693A (zh) | 1998-07-15 |
CN1063289C true CN1063289C (zh) | 2001-03-14 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN97102121A Expired - Fee Related CN1063289C (zh) | 1997-01-09 | 1997-01-09 | 绝缘层上有硅的动态随机存取存储器及其制作方法 |
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CN (1) | CN1063289C (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3596531B2 (ja) * | 2002-02-22 | 2004-12-02 | ブラザー工業株式会社 | 画像形成装置 |
US20060170044A1 (en) * | 2005-01-31 | 2006-08-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | One-transistor random access memory technology integrated with silicon-on-insulator process |
CN108075038A (zh) * | 2016-11-11 | 2018-05-25 | 中芯国际集成电路制造(上海)有限公司 | 动态随机存储器及其形成方法 |
US11011520B2 (en) * | 2019-03-15 | 2021-05-18 | Etron Technology, Inc. | Semiconductor DRAM cell structure having low leakage capacitor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5442584A (en) * | 1993-09-14 | 1995-08-15 | Goldstar Electron Co., Ltd. | Semiconductor memory device and method for fabricating the same dynamic random access memory device construction |
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1997
- 1997-01-09 CN CN97102121A patent/CN1063289C/zh not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5442584A (en) * | 1993-09-14 | 1995-08-15 | Goldstar Electron Co., Ltd. | Semiconductor memory device and method for fabricating the same dynamic random access memory device construction |
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Publication number | Publication date |
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CN1187693A (zh) | 1998-07-15 |
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Legal Events
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C06 | Publication | ||
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: LANZE TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: LIANHUA ELECTRONIC CO., LTD. Effective date: 20100802 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 000000 HSINCHU SCIENCE INDUSTRY PARK, TAIWAN PROVINCE, CHINA TO: DELAWARE STATE, USA |
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TR01 | Transfer of patent right |
Effective date of registration: 20100802 Address after: Delaware Patentee after: Blue Ze Technology Co., Ltd. Address before: 000000 Hsinchu Science Industrial Park, Taiwan, China Patentee before: United Microelectronics Corporation |
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C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20010314 Termination date: 20120109 |