CN106319222B - 一种铜铟镓硒光伏组件的回收方法 - Google Patents
一种铜铟镓硒光伏组件的回收方法 Download PDFInfo
- Publication number
- CN106319222B CN106319222B CN201510361280.3A CN201510361280A CN106319222B CN 106319222 B CN106319222 B CN 106319222B CN 201510361280 A CN201510361280 A CN 201510361280A CN 106319222 B CN106319222 B CN 106319222B
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- CN
- China
- Prior art keywords
- copper
- indium
- gallium
- selenium
- photovoltaic component
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 238000011084 recovery Methods 0.000 title claims abstract description 30
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052738 indium Inorganic materials 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 25
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000011669 selenium Substances 0.000 claims abstract description 22
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 21
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 20
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 18
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 18
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 13
- 239000011733 molybdenum Substances 0.000 claims abstract description 13
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 11
- 239000010935 stainless steel Substances 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims abstract description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 116
- 239000000243 solution Substances 0.000 claims description 29
- 238000002386 leaching Methods 0.000 claims description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 20
- 238000012545 processing Methods 0.000 claims description 12
- 238000007654 immersion Methods 0.000 claims description 11
- 238000000926 separation method Methods 0.000 claims description 10
- 238000000605 extraction Methods 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- 238000005406 washing Methods 0.000 claims description 9
- 238000001556 precipitation Methods 0.000 claims description 8
- 238000001914 filtration Methods 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 238000004064 recycling Methods 0.000 claims description 5
- 238000002791 soaking Methods 0.000 claims description 5
- 238000011549 displacement method Methods 0.000 claims description 4
- 238000005868 electrolysis reaction Methods 0.000 claims description 4
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 claims description 4
- 238000006386 neutralization reaction Methods 0.000 claims description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 3
- 239000003518 caustics Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 238000010129 solution processing Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 9
- 239000012634 fragment Substances 0.000 abstract description 4
- 239000003513 alkali Substances 0.000 abstract description 2
- 239000007769 metal material Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004821 distillation Methods 0.000 description 3
- 239000006166 lysate Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910000928 Yellow copper Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000012492 regenerant Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
Landscapes
- Photovoltaic Devices (AREA)
- Manufacture And Refinement Of Metals (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
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CN201510361280.3A CN106319222B (zh) | 2015-06-28 | 2015-06-28 | 一种铜铟镓硒光伏组件的回收方法 |
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CN201510361280.3A CN106319222B (zh) | 2015-06-28 | 2015-06-28 | 一种铜铟镓硒光伏组件的回收方法 |
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CN106319222A CN106319222A (zh) | 2017-01-11 |
CN106319222B true CN106319222B (zh) | 2018-06-19 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108754147A (zh) * | 2018-06-08 | 2018-11-06 | 汉能新材料科技有限公司 | 一种亚熔盐在分解回收铜铟镓硒物料和/或铜铟硒物料的用途 |
CN108831995B (zh) * | 2018-06-08 | 2022-07-29 | 东君新能源有限公司 | 一种柔性组件中有机层的分离方法 |
CN109802005A (zh) * | 2018-12-11 | 2019-05-24 | 汉能新材料科技有限公司 | 薄膜太阳能电池芯片的回收方法 |
CN112662884B (zh) * | 2020-12-16 | 2022-08-09 | 中国科学院电工研究所 | 一种回收晶硅异质结太阳电池中金属银的方法 |
CN113578942B (zh) * | 2021-09-29 | 2021-12-17 | 晶科能源(海宁)有限公司 | 太阳能电池碎片回收系统 |
CN115338225B (zh) * | 2022-08-16 | 2024-04-26 | 常州工学院 | 废旧光伏组件含氟背板无害化处理装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5779877A (en) * | 1997-05-12 | 1998-07-14 | Drinkard Metalox, Inc. | Recycling of CIS photovoltaic waste |
CN102296178A (zh) * | 2010-06-25 | 2011-12-28 | 光洋应用材料科技股份有限公司 | 铜铟镓硒的回收方法 |
CN104017995A (zh) * | 2014-06-24 | 2014-09-03 | 株洲冶炼集团股份有限公司 | 一种从含铜铟镓硒废料中回收铜铟镓硒的方法 |
CN104018186A (zh) * | 2014-06-24 | 2014-09-03 | 株洲冶炼集团股份有限公司 | 一种铜铟镓硒的回收方法 |
-
2015
- 2015-06-28 CN CN201510361280.3A patent/CN106319222B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5779877A (en) * | 1997-05-12 | 1998-07-14 | Drinkard Metalox, Inc. | Recycling of CIS photovoltaic waste |
CN102296178A (zh) * | 2010-06-25 | 2011-12-28 | 光洋应用材料科技股份有限公司 | 铜铟镓硒的回收方法 |
CN104017995A (zh) * | 2014-06-24 | 2014-09-03 | 株洲冶炼集团股份有限公司 | 一种从含铜铟镓硒废料中回收铜铟镓硒的方法 |
CN104018186A (zh) * | 2014-06-24 | 2014-09-03 | 株洲冶炼集团股份有限公司 | 一种铜铟镓硒的回收方法 |
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Effective date of registration: 20170829 Address after: 100101, No. 14, building 1, 7, 101, 0801, 3, building 8, building No. 2, West Beichen Road, Chaoyang District, Beijing Applicant after: HANERGY CO-INNO MOBILE ENERGY INVESTMENT Co.,Ltd. Address before: 100101 Beijing, Beichen West Road, No. 8, Beichen Century Center, block B, floor 10, Applicant before: HANERGY NEW MATERIAL TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20190203 Address after: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee after: HANERGY PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. Address before: 100101 Beijing Chaoyang District Beichen West Road No. 8 Courtyard 3 Building 1 to 14 Floor 101, 7 Floor 0801 Patentee before: HANERGY CO-INNO MOBILE ENERGY INVESTMENT Co.,Ltd. |
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Effective date of registration: 20190308 Address after: Room 107, Building 2, Olympic Village Street Comprehensive Office District, Chaoyang District, Beijing Patentee after: HANERGY MOBILE ENERGY HOLDING GROUP Co.,Ltd. Address before: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee before: HANERGY PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. |
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