CN106299021A - A kind of single crystal battery diffusion technique of high open circuit voltage - Google Patents
A kind of single crystal battery diffusion technique of high open circuit voltage Download PDFInfo
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- CN106299021A CN106299021A CN201610686259.5A CN201610686259A CN106299021A CN 106299021 A CN106299021 A CN 106299021A CN 201610686259 A CN201610686259 A CN 201610686259A CN 106299021 A CN106299021 A CN 106299021A
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000013078 crystal Substances 0.000 title claims abstract description 17
- 238000001816 cooling Methods 0.000 claims abstract description 28
- 238000000151 deposition Methods 0.000 claims abstract description 27
- 230000008021 deposition Effects 0.000 claims abstract description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 229910019213 POCl3 Inorganic materials 0.000 claims abstract description 13
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims abstract description 13
- 235000019628 coolness Nutrition 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 230000014759 maintenance of location Effects 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 238000004062 sedimentation Methods 0.000 claims description 4
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses the single crystal battery diffusion technique of a kind of high open circuit voltage.It uses the heating and cooling of multiple stage type to advance diffusion way, thus promotes Monocrystalline silicon cell piece conversion efficiency, and concrete operation step is as follows: (1) low temperature depositing: use low deposition temperature and high POCl3With oxygen proportion；(2) two steps heat up: low deposition temperature carry out a step intensification and keeps, low deposition temperature carry out two step intensifications the most again and keeps；(3) three steps coolings are come out of the stove: take three cooling temperature and carry out the cooling of three phases and aoxidize and keep；(4) by the slice, thin piece of diffusion, sheet resistance is tested, complete.The invention has the beneficial effects as follows: reduce surface dead layer, improving minority carrier life time, improve sheet resistance uniformity, after diffusion, silicon chip surface square resistance concordance is good, thus promotes the Uoc of single crystal battery sheet, improves the conversion efficiency of Monocrystalline silicon cell piece.
Description
Technical field
The present invention relates to the R&D and production correlative technology field of monocrystaline silicon solar cell, refer in particular to a kind of high open circuit electricity
The single crystal battery diffusion technique of pressure.
Background technology
Pn-junction is the core of solaode, and therefore the quality of diffusing qualities directly affects quality and the effect of battery
Rate.Diffusion technique is to put in high temperature dispersing furnace by silicon chip, passes to nitrogen and POCl3Deng gas, it is utilized at high temperature to decompose
After generate P atom at silicon chip surface, and diffuse into inside silicon chip, thus form pn-junction.The built in field that pn-junction produces makes
Electronics and hole do not return to original place after flowing, material is thus formed electric current, are drawn by electric current with wire, it is simply that unidirectional current.
High-quality pn-junction is to reduce to be combined, and increases the key in life-span, and its lifting Uoc opens pressure thus improves solaode
Conversion efficiency.The quality of pn-junction is mainly manifested in the uniformity of junction depth, and the uniformity of junction depth directly shows the equal of sheet resistance
In even property, the diversity of sheet resistance uniformity the most then junction depth is little, and vice versa.And different junction depths also differs relative to sintering temperature
Sample.For changing angle, same sintering condition is for the good cell piece of diffusion uniformity, and its Ohmic contact will be got well, short
The unit for electrical property parameters such as road electric current, fill factor, curve factor also can be more stable.So, the conversion efficiency of cell piece is also the most more stable.Further,
Unit for electrical property parameters concordance between cell piece and cell piece is good, is also beneficial to the stability of assembly and anti-Decay Rate, thus carries
The high service life of solar cell.Therefore, how to improve the uniformity of diffusion just to seem and be highly desirable to.
P atom diffusion coefficient under the high temperature conditions is relatively big, and conventional diffusion is at high temperature to spread and advance, and this causes sheet resistance
Uniformity poor, uniformity to be made makes moderate progress and is accomplished by spreading under cryogenic, but owing to P most under low temperature is former
Son fails activation and causes surface dead layer to increase, and complex centre is increased, and minority carrier life time reduces.
Summary of the invention
The present invention is to there is above-mentioned deficiency in prior art to overcome, it is provided that one is improved sheet resistance uniformity and carries
The single crystal battery diffusion technique of the high open circuit voltage of high conversion efficiency.
To achieve these goals, the present invention is by the following technical solutions:
The single crystal battery diffusion technique of a kind of high open circuit voltage, uses the heating and cooling of multiple stage type to advance diffusion way, thus
Promoting Monocrystalline silicon cell piece conversion efficiency, concrete operation step is as follows:
(1) low temperature depositing: use low deposition temperature and high POCl3With oxygen proportion；
(2) two steps heat up: low deposition temperature carry out a step intensification and keeps, the most again low deposition temperature being carried out two steps
Heat up and keep；
(3) three steps coolings are come out of the stove: take three cooling temperature and carry out the cooling of three phases and aoxidize and keep；
(4) by the slice, thin piece of diffusion, sheet resistance is tested, complete.
By using low deposition temperature and high POCl3With oxygen proportion, point two steps heat up, after often step reaches design temperature,
Maintain this temperature, divide three step coolings to come out of the stove the most again, it is possible to effectively to reduce surface dead layer, improve minority carrier life time, improve sheet resistance equal
Even property, after diffusion, silicon chip surface square resistance concordance is good.Use technique scheme, single crystal battery sheet Uoc to be carried simultaneously
Rising, conversion efficiency can also promote.
As preferably, the raw material used is the POCl of purity >=99.9999%3, the O of purity >=99.5%2.Wherein:
Also need to use the big nitrogen of purity >=99.999%.
As preferably, in step (1), POCl3Being 3: 1 with the ratio of oxygen, low deposition temperature is 780 DEG C, during deposition
Between be 7min-15min.
As preferably, in step (2), one step heat up temperature be 810 DEG C-820 DEG C, one step heat up retention time be
5min-10min；The temperature that two steps heat up is 850 DEG C-870 DEG C, and the retention time that two steps heat up is 5min-13min.
As preferably, in step (3), the temperature of three coolings is 830 DEG C, 810 DEG C and 780 DEG C respectively, three coolings
The retention time of oxidation is 400s, and the oxygen flow of three cooling oxidations is 1600sccm-2000sccm.
The invention has the beneficial effects as follows: reduce surface dead layer, improve minority carrier life time, improve sheet resistance uniformity, silicon after diffusion
Sheet surface square resistance concordance is good, thus promotes the Uoc of single crystal battery sheet, improves the conversion efficiency of Monocrystalline silicon cell piece.
Detailed description of the invention
Below in conjunction with detailed description of the invention, the present invention will be further described.
The single crystal battery diffusion technique of a kind of high open circuit voltage, uses the heating and cooling of multiple stage type to advance diffusion way, thus
Promoting Monocrystalline silicon cell piece conversion efficiency, concrete operation step is as follows:
(1) low temperature depositing: use low deposition temperature and high POCl3With oxygen proportion；Wherein: POCl3With the ratio of oxygen it is
3: 1, low deposition temperature is 780 DEG C, and sedimentation time is 7min-15min；
(2) two steps heat up: low deposition temperature carry out a step intensification and keeps, the most again low deposition temperature being carried out two steps
Heat up and keep；Wherein: the temperature that a step heats up is 810 DEG C-820 DEG C, the retention time that a step heats up is 5min-10min；Two
The temperature that step heats up is 850 DEG C-870 DEG C, and the retention time that two steps heat up is 5min-13min；
(3) three steps coolings are come out of the stove: take three cooling temperature and carry out the cooling of three phases and aoxidize and keep；Wherein: three
The temperature of cooling is 830 DEG C, 810 DEG C and 780 DEG C respectively, and the retention time of three cooling oxidations is 400s, three cooling oxygen
The oxygen flow changed is 1600sccm-2000sccm；
(4) by the slice, thin piece of diffusion, sheet resistance is tested, complete.
Wherein: the raw material used is the POCl of purity >=99.9999%3, the big nitrogen of purity >=99.999%, purity
The O of >=99.5%2。
Embodiment 1:
A kind of specifications and models are the monocrystalline silicon battery diffusion technique of 156*200, comprise the steps:
(1) low temperature depositing: use low deposition Buwen's degree and a high proportion of POCl3With oxygen, concrete flow is as follows: POCl3For
2100sccm, oxygen is 700sccm, and depositing temperature is 780 DEG C, and sedimentation time is 8min；
(2) two steps heat up: intensification 4min to 810 DEG C, keep 10min low temperature to advance, then 5min is warming up to 850 DEG C, keep
13min high temperature advances；
(3) three step coolings are come out of the stove: a point three phases is cooled to 830 DEG C, 810 DEG C, 780 DEG C, lowers the temperature with 400s respectively
Oxidation, oxygen flow is 1600sccm；
(4) by the slice, thin piece of diffusion, sheet resistance is tested, complete.
Use conventional diffusion technique to prepare the Monocrystalline silicon cell piece of same size model simultaneously, and test sheet resistance.
Using 4D sheet resistance tester, test 5 points, 49 sheet resistances respectively, result is as follows:
Table 1 embodiment 1 and sheet resistance performance comparison in conventional diffusion technique
Knowable to from upper table 1, diffusion technique gained Monocrystalline silicon cell piece surface of the present invention square resistance concordance is good, STD
It is worth little.
Table 2 is prepared with conventional diffusion technology for using diffusion technique 156*200 model single crystal battery conversion efficiency of the present invention
The efficiency comparative of monocrystalline silicon battery.
Table 2
| Uoc | Isc | Rs | Rsh | FF | NCell | |
| Embodiment 1 | 0.6437 | 9.304 | 0.0031 | 325 | 79.65 | 19.96% |
| Conventional diffusion technique | 0.6417 | 9.281 | 0.0039 | 299 | 79.83 | 19.90% |
Knowable to upper table 2, after using the diffusion technique of the present invention, 156*200 model monocrystaline silicon solar cell achieves
Conversion efficiency promotes 0.06%, and Uoc promotes 2mV.
Embodiment 2:
A kind of specifications and models are the monocrystalline silicon battery diffusion technique of 156.75*205, comprise the steps:
(1) low temperature depositing: use low deposition Buwen's degree and a high proportion of POCl3With oxygen, concrete flow is as follows: POCl3For
2100sccm, oxygen is 700sccm, and depositing temperature is 780 DEG C, and sedimentation time is 8.5min；
(2) two steps heat up: intensification 4min to 810 DEG C, keep 10min low temperature to advance, then 5min is warming up to 850 DEG C, keep
13min high temperature advances；
(3) three step coolings are come out of the stove: a point three phases is cooled to 830 DEG C, 810 DEG C, 780 DEG C, lowers the temperature with 400s respectively
Oxidation, oxygen flow is 1600sccm；
(4) by the slice, thin piece of diffusion, sheet resistance is tested, complete.
Use conventional diffusion technique to prepare the Monocrystalline silicon cell piece of same size model simultaneously, and test sheet resistance.
Using 4D sheet resistance tester, test 5 points, 49 sheet resistances respectively, result is as follows:
Table 3 embodiment 2 and sheet resistance performance comparison in conventional diffusion technique
Knowable to upper table 3, the diffusion technique gained monocrystalline silicon sheet surface square resistance concordance of the present invention is good, and STD is little.
Table 4 is the diffusion technique 156.75*205 model single crystal battery conversion efficiency using the present invention and conventional diffusion technology
Prepare the efficiency comparative of monocrystalline silicon battery.
Table 4
| Uoc | Isc | Rs | Rsh | FF | NCell | |
| Embodiment 2 | 0.6442 | 9.316 | 0.0029 | 256 | 79.65 | 20.00% |
| Conventional diffusion scheme | 0.6422 | 9.278 | 0.0031 | 251 | 79.97 | 19.94% |
As known from Table 4, after using the diffusion technique of the present invention, 156.75*205 model monocrystaline silicon solar cell achieves
Conversion efficiency promotes 0.06%, and Uoc promotes 2mV.
Claims (5)
1. a single crystal battery diffusion technique for high open circuit voltage, is characterized in that, uses the heating and cooling of multiple stage type to advance diffused sheet
Formula, thus promote Monocrystalline silicon cell piece conversion efficiency, concrete operation step is as follows:
(1) low temperature depositing: use low deposition temperature and high POCl3With oxygen proportion；
(2) two steps heat up: low deposition temperature carries out a step intensification and keeps, low deposition temperature carries out two step intensifications the most again
And keep；
(3) three steps coolings are come out of the stove: take three cooling temperature and carry out the cooling of three phases and aoxidize and keep；
(4) by the slice, thin piece of diffusion, sheet resistance is tested, complete.
The single crystal battery diffusion technique of a kind of high open circuit voltage the most according to claim 1, is characterized in that, used is former
Material is the POCl of purity >=99.9999%3, the O of purity >=99.5%2。
The single crystal battery diffusion technique of a kind of high open circuit voltage the most according to claim 1 and 2, is characterized in that, in step
(1) in, POCl3Being 3: 1 with the ratio of oxygen, low deposition temperature is 780 DEG C, and sedimentation time is 7min-15min.
The single crystal battery diffusion technique of a kind of high open circuit voltage the most according to claim 1 and 2, is characterized in that, in step
(2) in, the temperature that a step heats up is 810 DEG C-820 DEG C, and the retention time that a step heats up is 5min-10min；The temperature that two steps heat up
Degree is 850 DEG C-870 DEG C, and the retention time that two steps heat up is 5min-13min.
The single crystal battery diffusion technique of a kind of high open circuit voltage the most according to claim 1 and 2, is characterized in that, in step
(3) in, the temperature of three coolings is 830 DEG C, 810 DEG C and 780 DEG C respectively, and the retention time of three cooling oxidations is 400s,
The oxygen flow of three cooling oxidations is 1600sccm-2000sccm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110047972A (en) * | 2019-04-12 | 2019-07-23 | 常州大学 | A kind of Novel polycrystalline silicon doping P diffusion process of preparing |
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| CN101217170A (en) * | 2007-12-27 | 2008-07-09 | 北京市太阳能研究所有限公司 | A diffusion technique applied on silicon solar battery |
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| CN102916086A (en) * | 2012-10-31 | 2013-02-06 | 湖南红太阳光电科技有限公司 | Diffusing process of low-square resistance crystalline silicon cell |
| CN105280755A (en) * | 2015-09-17 | 2016-01-27 | 江西展宇新能源股份有限公司 | Thrice continuous deposition and heating diffusion technology |
-
2016
- 2016-08-17 CN CN201610686259.5A patent/CN106299021B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3796069B2 (en) * | 1999-07-15 | 2006-07-12 | 三洋電機株式会社 | Solar cell module |
| CN101217170A (en) * | 2007-12-27 | 2008-07-09 | 北京市太阳能研究所有限公司 | A diffusion technique applied on silicon solar battery |
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| CN110047972A (en) * | 2019-04-12 | 2019-07-23 | 常州大学 | A kind of Novel polycrystalline silicon doping P diffusion process of preparing |
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