CN106220176A - 一种金刚石/陶瓷复合基板材料及其制备方法 - Google Patents

一种金刚石/陶瓷复合基板材料及其制备方法 Download PDF

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CN106220176A
CN106220176A CN201610608062.XA CN201610608062A CN106220176A CN 106220176 A CN106220176 A CN 106220176A CN 201610608062 A CN201610608062 A CN 201610608062A CN 106220176 A CN106220176 A CN 106220176A
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李志宏
王津松
朱玉梅
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Tianjin University
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Abstract

本发明公开了一种金刚石/陶瓷复合基板材料及其制备方法，其原料组分及质量百分比含量为：金刚石粉末50～82％，陶瓷粉末18～50％，其中陶瓷粉末的原料组分及质量百分比含量为：SiO2 45～65％，B2O3 18～32％，Al2O3 1～6％，Li2O 2～12％，K2O 2～8％，CaO3～8％，Y2O3或La2O3 1～10％。本发明在常压下于720～780℃烧结制得，导热系数达9.1w/(m·k)，1MHz下的介电常数低至3.6，抗弯强度达100MPa，具有制备温度低、工艺简单、强度高、介电常数低等优点，且热膨胀系数与GaAs、Si等芯片材料匹配性好，满足电子封装基板材料的性能要求。

Description

一种金刚石/陶瓷复合基板材料及其制备方法
技术领域
本发明属于一种以成分为特征的陶瓷组合物，尤其涉及一种电子封装材料的金刚石/陶瓷复合基板材料及其制备方法。
背景技术
随着电子科学技术的飞速发展，集成电路向着微型化、密集化、多功能化和高性能方向不断发展，由于功能电子元件常常在使用过程中因温度过高导致热疲劳而无法正常工作，这就对电子封装材料的性能提出了更为严格的要求。电子封装材料起着支撑和保护集成电路和电子元件，散失工作过程中产生的热量的重要作用。传统的电子封装材料如塑料封装材料热导率低，热膨胀系数高，不利于集成电路的性能和寿命的提高。金属封装材料热导率高，散热性能优良，但热膨胀系数高，与集成电路匹配性差。陶瓷封装材料虽然热膨胀系数小，绝缘性能优良，但是热导率却相对较低，无法满足现今集成电路对散热的要求。金刚石复合型材料作为新型电子封装材料,具有高热导率、热膨胀系数低、气密性好、强度高、密度低等优点,成为新的研究热点。但是目前金刚石复合型材料的制备多依赖于高温合成，无法有效避免高温下金刚石的石墨化问题，且制备工艺复杂，因此，如何降低金刚石复合材料的制备温度，简化生产制备工艺，提高复合材料的性能是金刚石复合电子封装材料领域需要解决的重点问题。
发明内容
本发明的目的，是为降低金刚石复合电子封装材料的制备温度及成本，简化生产制备工艺，提供的一种节能高效的金刚石/陶瓷复合基板材料及其制备方法。该金刚石/陶瓷复合基板材料可在常压条件下制得，导热系数达9.1w/(m·k)，1MHz下的介电常数低至3.6。
本发明通过如下技术方案予以实现：
一种金刚石/陶瓷复合基板材料，其原料组分及质量百分比含量为：金刚石粉末50～82％，陶瓷粉末18～50％；
其中，陶瓷粉末的原料组分及质量百分比含量为：SiO2 45～65％，B2O3 18～32％，Al2O3 1～6％，Li2O 2～12％，K2O 2～8％，CaO 3～8％，Y2O3或La2O3 1～10％。
上述金刚石/陶瓷复合基板材料的制备方法，具有如下实施步骤：
(1)将SiO2、B2O3、Al2O3、Li2O、K2O、CaO、Y2O3或La2O3按照SiO2 45～65％，B2O3 18～32％，Al2O3 1～6％，Li2O 2～12％，K2O 2～8％，CaO 3～8％，Y2O3或La2O3 1～10％的质量计量比混合，采用刚玉磨球，干式球磨8h，过200目标准筛，制得混合粉末；
(2)将步骤(1)制得的混合粉末置于熔块炉于1400℃下熔炼4h，再经过水淬，得到玻璃块体，然后将制得的玻璃块体干式球磨24h，过200目标准筛，得到陶瓷粉末；
(3)将步骤(2)制得的陶瓷粉末与金刚石粉末按照金刚石粉末50～82％、陶瓷粉末18～50％的计量比混合，以乙醇为介质，采用刚玉磨球，湿式球磨8h，过200目标准筛，得到基板混合料；
(4)将步骤(3)得到基板混合料倒入模具内，在160Mpa下冷压成型为坯体；
(5)将步骤(4)成型的坯体置于马弗炉中于720～780℃进行烧结，保温4～6h，制得金刚石/陶瓷复合基板材料。
所述步骤(5)的最佳烧结温度为760℃。
所述金刚石/陶瓷复合基板材料的导热系数为9.1w/(m·k)，1MHz下的介电常数为3.6。
本发明的有益效果是，提供了一种金刚石/陶瓷复合基板材料及其制备方法，该基板材料可在常压条件下，于720～780℃烧结制得，导热系数可达9.1w/(m·k)，1MHz下的介电常数低至3.6，抗弯强度达100MPa，具有制备温度低、工艺简单、强度高、介电常数低等优点，且热膨胀系数与GaAs(砷化镓)、Si等芯片材料匹配性好，满足基板材料的性能要求。
具体实施方式
下面结合具体实施例对本发明作进一步描述。
本发明所使用的原料均为市售分析纯试剂，其原料组分及质量百分比含量为：金刚石粉末50～82％，陶瓷粉末18～50％；
其中，陶瓷粉末的原料组分及质量百分比含量为：SiO2 45～65％，B2O3 18～32％，Al2O3 1～6％，Li2O 2～12％，K2O 2～8％，CaO 3～8％，Y2O3或La2O3 1～10％。
上述金刚石/陶瓷复合基板材料的制备方法，具体步骤如下：
陶瓷粉末的制备
(1)将SiO2、B2O3、Al2O3、Li2O、K2O、CaO、Y2O3或La2O3按照SiO2 45～65％，B2O3 18～32％，Al2O3 1～6％，Li2O 2～12％，K2O 2～8％，CaO 3～8％，Y2O3或La2O3 1～10％的质量计量比混合，采用刚玉磨球，干式球磨8h，过200目标准筛，制得混合粉末；
(2)将步骤(1)制得的混合粉末置于熔块炉于1400℃下熔炼4h，再经过水淬，得到玻璃块体，然后将制得的玻璃块体干式球磨24h，过200目标准筛，得到陶瓷粉末；
具体实施例的陶瓷粉末原料组分配比详见表1。
配料
(3)将步骤(2)制得的陶瓷粉末与金刚石粉末按照金刚石粉末50～82％，陶瓷粉末18～50％的质量计量比混合，以乙醇为介质，采用刚玉磨球，湿式球磨8h，过200目标准筛，得到基板混合料。
坯体成型
(4)将步骤(3)得到基板混合料倒入模具内，在160Mpa下冷压成型为坯体。
烧结
(5)将步骤(4)成型后的坯体置于马弗炉中于720～780℃进行烧结，保温4～6h，制得金刚石/陶瓷复合基板材料；
具体实施例的基板混合料组分配比及烧结温度详见表2。
性能检测
将烧结后的金刚石/陶瓷复合基板材料进行导热、介电常数、抗弯强度测试，相关性能参数详见表3。
表1
表2
表3
以上仅对本发明做了实例性的描述，应该说明的是，本发明并不局限于上述实施例，很多细节的变化是可能的，并不因此违背本发明的精神。

Claims (3)

1.一种金刚石/陶瓷复合基板材料，其原料组分及质量百分比含量为：金刚石粉末50～82％，陶瓷粉末18～50％；
其中，陶瓷粉末的原料组分及质量百分比含量为：SiO2 45～65％，B2O3 18～32％，Al2O31～6％，Li2O 2～12％，K2O 2～8％，CaO 3～8％，Y2O3或La2O3 1～10％。
上述金刚石/陶瓷复合基板材料的制备方法，具有如下实施步骤：
(1)将SiO2、B2O3、Al2O3、Li2O、K2O、CaO、Y2O3或La2O3按照SiO2 45～65％，B2O3 18～32％，Al2O3 1～6％，Li2O 2～12％，K2O 2～8％，CaO 3～8％，Y2O3或La2O3 1～10％的质量计量比混合，然后采用刚玉磨球，干式球磨8h，过200目标准筛，制得混合粉末；
(2)将步骤(1)制得的混合粉末置于熔块炉于1400℃下熔炼4h，再经过水淬，得到玻璃块体，然后将制得的玻璃块体干式球磨24h，过200目标准筛，得到陶瓷粉末；
(3)将步骤(2)制得的陶瓷粉末与金刚石粉末按照金刚石粉末50～82％，陶瓷粉末18～50％的计量比混合，以乙醇为介质，采用刚玉磨球，湿式球磨8h，过200目标准筛，得到基板混合料；
(4)将步骤(3)得到基板混合料倒入模具内，在160Mpa下冷压成型为坯体；
(5)将步骤(4)成型后的坯体置于马弗炉中于720～780℃进行烧结，保温4～6h，制得金刚石/陶瓷复合基板材料。
2.根据权利要求1所述的金刚石/陶瓷复合基板材料的制备方法，其特征在于，所述步骤(5)的最佳烧结温度为760℃。
3.根据权利要求1所述的金刚石/陶瓷复合基板材料的制备方法，其特征在于，所述金刚石/陶瓷复合基板材料的导热系数为9.1w/(m·k)，1MHz下的介电常数为3.6。
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