CN106208972A - The harmonic power amplifying circuit in a kind of high efficiency height broadband and radio-frequency power amplifier - Google Patents
The harmonic power amplifying circuit in a kind of high efficiency height broadband and radio-frequency power amplifier Download PDFInfo
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- CN106208972A CN106208972A CN201610702123.9A CN201610702123A CN106208972A CN 106208972 A CN106208972 A CN 106208972A CN 201610702123 A CN201610702123 A CN 201610702123A CN 106208972 A CN106208972 A CN 106208972A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0216—Continuous control
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
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Abstract
The present invention is applicable to field of radio frequency communication, it is provided that the harmonic power amplifying circuit in a kind of high efficiency height broadband and radio-frequency power amplifier, this circuit includes: input matching network, transistor and output matching network；The grid of transistor connects the outfan of input matching network, and the drain electrode of transistor connects the input of output matching network, the source ground of transistor；Output matching network makes harmonic power amplifying circuit lower sideband be operated in continuous against F class amplification mode, makes harmonic power amplifying circuit upper side band be operated in continuous F class amplification mode；Output matching network forms low pass filter with the parasitic network of transistor.The present invention by continuous against excessive to continuous F power-like amplifier mode of operation of F power-like amplifier mode of operation, effectively the efficiency of continuous harmonic controling power-like amplifier is increased to greater than 60%, relative bandwidth is increased to greater than 80%, and harmonic impedance mates simply, easily realizes.
Description
Technical field
The invention belongs to field of radio frequency communication, particularly relate to the harmonic power amplifying circuit in a kind of high efficiency height broadband and penetrate
Frequently power amplifier.
Background technology
Current 5th Generation Mobile Communication System to the compliance of communication standard from strength to strength, thus to radio-frequency power
The bandwidth requirement of amplifier is more and more higher, meanwhile, along with the further development of green economy, the market effect to power amplifier
Rate also requires that more and more higher.And the power amplifier of high efficiency, high broadband is typically based primarily upon E power-like amplifier structure harmony
Ripple controls the structure of power-like amplifier and is designed.
But, although E power-like amplifier simple in construction, efficiency is high, but owing to E power-like amplifier exists in theory
Upper operational frequency limit, thus limit the further application in lower frequency range of the E power-like amplifier；
And for being applicable to the harmonic controling power-like amplifier of higher operational frequency, such as F power-like amplifier and inverse F
Power-like amplifier, not only needs to carry out the control of accurate harmonic impedance at transistor drain, and narrow bandwidth, in order to extend
Bandwidth, has gone out continuous harmonic controling power-like amplifier based on harmonic controling power-like amplifier structural development, including continuously
Type F power-like amplifier and continuous against F power-like amplifier, but, continuous F power-like amplifier and continuous are against F class
Power amplifier needs in certain bandwidth simultaneously full when the efficiency provided more than 70% and the relative bandwidth more than 50%
Foot second harmonic and the impedance conditions of triple-frequency harmonics, brings huge challenge to the design of match circuit, and its complexity
Distribution road is degrading efficiency to a certain extent.
Summary of the invention
The purpose of the embodiment of the present invention is to provide the harmonic power amplifying circuit in a kind of high efficiency height broadband, it is intended to solve
Existing power amplification circuit cannot realize high efficiency, high broadband simultaneously, and harmonic impedance mates easy problem.
The embodiment of the present invention is achieved in that the harmonic power amplifying circuit in a kind of high efficiency height broadband, described harmonic wave
Power amplification circuit includes:
Input matching network, transistor and output matching network；
The input of described input matching network is the input of described harmonic power amplifying circuit, described input pair net
The outfan of network is connected with the grid of described transistor, and the drain electrode of described transistor is with the input of described output matching network even
Connecing, the source ground of described transistor, the outfan of described output matching network is the output of described harmonic power amplifying circuit
End；
Described output matching network makes described harmonic power amplifying circuit lower sideband be operated in continuous against F class amplification mould
Formula, makes described harmonic power amplifying circuit upper side band be operated in continuous F class amplification mode；
Described output matching network forms low pass filter with the parasitic network of described transistor.
The another object of the embodiment of the present invention is, it is provided that a kind of harmonic power using above-mentioned high efficiency height broadband is amplified
The radio-frequency power amplifier of circuit.
The another object of the embodiment of the present invention is, it is provided that the harmonic power amplifying circuit in a kind of above-mentioned high efficiency height broadband
The method for designing of middle output matching network, described method includes:
Use emulation tool to obtain described harmonic power amplifying circuit continuous under operating frequency f1 respectively to put against F class
The optimal base natural impedance of large model and the optimal base natural impedance of the continuous F class amplification mode under operating frequency f2；
Third-order low-pass web original parameter is obtained by tabling look-up, and according to third-order low-pass web original parameter, design frequency
Carry out frequency and impedance transformation with reference impedance, obtain real number impedance-real number impedance transformer；
The parasitic network parameter of binding crystal pipe, is optimized for real number impedance-plural number by real number impedance-real number impedance transformer
Impedance transformer, described complex impedance is equal to described optimal base natural impedance；
According to third-order low-pass web original parameter building topology structure, and the electric capacity in described topological structure and inductance are replaced
It is changed to transmission line.
Continuous F power-like amplifier and continuous are combined by the embodiment of the present invention against F power-like amplifier, pass through
Continuous, against excessive to continuous F power-like amplifier mode of operation of F power-like amplifier mode of operation, has been widened single
The design space of continuous harmonic controling power-like amplifier, effectively by the efficiency of continuous harmonic controling power-like amplifier
It is increased to greater than 60%, relative bandwidth is increased to greater than 80%, and harmonic impedance mates simply, easily realizes.
Accompanying drawing explanation
The structure chart of the harmonic power amplifying circuit in the high efficiency height broadband that Fig. 1 provides for the embodiment of the present invention；
Fig. 2 is the Smith circle diagram of continuous F power-like amplifier；
Fig. 3 is the continuous Smith circle diagram against F power-like amplifier；
In the harmonic power amplifying circuit in the high efficiency height broadband that Fig. 4 provides for the embodiment of the present invention output matching network with
The topology diagram of the third-order low-pass filter that the parasitic network of transistor is formed；
The parasitic net of transistor in the harmonic power amplifying circuit in the high efficiency height broadband that Fig. 5 provides for the embodiment of the present invention
Network figure；
Output matching network in the harmonic power amplifying circuit in the high efficiency height broadband that Fig. 6 provides for the embodiment of the present invention
The flowage structure of method for designing.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, right
The present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, and
It is not used in the restriction present invention.If additionally, technical characteristic involved in each embodiment of invention described below
The conflict of not constituting each other just can be mutually combined.
Continuous F power-like amplifier and continuous are combined by the embodiment of the present invention against F power-like amplifier, pass through
Continuous, against excessive to continuous F power-like amplifier mode of operation of F power-like amplifier mode of operation, has been widened single
The design space of continuous harmonic controling power-like amplifier, effectively by the efficiency of continuous harmonic controling power-like amplifier
It is increased to greater than 60%, relative bandwidth is increased to greater than 80%, and harmonic impedance mates simply, easily realizes.
Below in conjunction with specific embodiment, the realization of the present invention is described in detail:
Fig. 1 shows the structure of the harmonic power amplifying circuit in the high efficiency height broadband that the embodiment of the present invention provides, in order to
It is easy to explanation, illustrate only part related to the present invention.
As one embodiment of the invention, the harmonic power amplifying circuit in this high efficiency height broadband can apply to any radio frequency
In power amplifier, including:
Input matching network 11, transistor M and output matching network 12；
The input of input matching network 11 is input and the electric capacity C in bias unit of harmonic power amplifying circuiti
One end connect, electric capacity CiThe other end be rf inputs, the grid of the outfan of input matching network 11 and transistor M is even
Connecing, the drain electrode of transistor M is connected with the input of output matching network 12, the source ground of transistor M, output matching network 12
The outfan that outfan is harmonic power amplifying circuit and bias unit in electric capacity CoOne end connect, electric capacity CoAnother
End is RF output end, and the offset side of input matching network 11 is by the inductance L in bias unitGWith electric capacity Cbypass1Connect grid
Source voltage VGS, the offset side of output matching network 12 is by the inductance L in bias unitDWith electric capacity Cbypass2Connect drain-source voltage
VDS；
Output matching network 12 makes harmonic power amplifying circuit lower sideband be operated in continuous against F class amplification mode, makes humorous
Wave power amplifying circuit upper side band is operated in continuous F class amplification mode；
Output matching network 12 forms low pass filter with the parasitic network of transistor M.
In embodiments of the present invention, theoretical according to Waveform Design, the current waveform of continuous F power-like amplifier is the most just
String, and voltage waveform is not unique, in the case of only considering triple-frequency harmonics, normalized voltage expression is as follows:
Because the appearance of negative voltage can deteriorate efficiency, so in order to ensure voltage non-negative, the span of γ is :-1≤γ
≤1.When γ=0, just obtain the F power-like amplifier voltage waveform of standard.
To continuous against for F power-like amplifier, due to it and F power-like amplifier duality relation each other, therefore, exist
In the case of only considering triple-frequency harmonics, continuous uniquely determines against the voltage of F power-like amplifier, and its normalization expression formula is such as
Under:
And current waveform is not unique, its normalization expression formula is as follows:
Wherein, iDC=0.37, i1=0.43, i3=0.06.In order to ensure the non-negative of current waveform, the span of ξ
It is :-1≤ξ≤1.When ξ=0, just obtain the inverse F power-like amplifier voltage waveform of standard.
According to formula:
Wherein, n represents the order of harmonic component.By voltage waveform and the current waveform table of continuous F power-like amplifier
Reaching formula, we can be derived that the impedance conditions of continuous F power-like amplifier:
Z3,F=∞ (5)
Wherein, RoptOptimum impedance for higher hamonic wave all standard B power-like amplifiers of short circuit.
Being similar to, we can derive the continuous impedance conditions against F power-like amplifier, for the convenience represented,
We use the expression-form of admittance:
Wherein, Gopt=1/Ropt.
Expression formula (5) constitutes the design space of continuous F power-like amplifier, the normalized impedance of Smith circle diagram
It is set to Ropt, the expression on Smith circle diagram of the design space of such continuous F power-like amplifier is the most as shown in Figure 2.Express
Formula (6) constitutes the continuous design space against F power-like amplifier, equally the normalized impedance of Smith circle diagram is set to
Ropt, the expression on Smith circle diagram is the most as shown in Figure 3 against the design space of F power-like amplifier for such continuous.
Owing to impedance of fundamental frequency is near round dot, and second harmonic impedance and triple-frequency harmonics impedance are all located on round edge, therefore
Need a low pass filter as output matching.
So by one output matching network 12 of design, this harmonic power amplifying circuit lower sideband is made to be operated in continuous
Inverse F class amplification mode, upper side band is operated in continuous F class amplification mode, by continuous against F power-like amplifier mode of operation
Excessive to continuous F power-like amplifier mode of operation, has widened single continuous harmonic controling power-like amplifier
Design space, is effectively improved efficiency and relative bandwidth.
Preferably, input matching network 11 could be arranged to fourth order low-pass wave filter, relative to more piece impedance transformer, has
Reduce to effect the area of input matching network.
Preferably, transistor M can select GaN transistor CGH40010F of Cree company, and its operating frequency is 0-
6GHz, typical output power is 10W.
Preferably, output matching network 12 forms third-order low-pass filter with the parasitic network of transistor, reduces design
Difficulty, and this method for designing can be flexibly applied to different operating frequency and different characteristic impedances.Wherein, transistor
The input of parasitic network connects the intrinsic drain electrode of transistor, and the outfan of the parasitic network of transistor connects output matching network
Input.
The topological structure of third-order low-pass filter sees Fig. 4, including:
Inductance L1, inductance L2, inductance L3, electric capacity C1, electric capacity C2, electric capacity C3；
One end of inductance L1 is the input of parasitic network, and the other end of inductance L1 passes through electric capacity C1 ground connection, inductance L1's
The other end also one end with inductance L2 is connected, and the other end of inductance L2 passes through electric capacity C2 ground connection, the other end of inductance L2 also with electricity
One end of sense L3 connects, and the other end of inductance L3 is that the outfan of parasitic network is by electric capacity C3 ground connection.
The parasitic network of transistor sees Fig. 5, including:
Inductance Lp, electric capacity CdsWith electric capacity Cp；
Inductance LpThe input that one end is parasitic network and electric capacity CdsOne end connect, inductance LpThe other end be parasitic
The outfan of network and electric capacity CpOne end connect, electric capacity CpThe other end and electric capacity CdsThe other end connect.
The flowage structure of the method for designing of output matching network 12 sees Fig. 6, specifically includes following step:
In step S101, use the loadpull emulation tool of ADS to obtain described harmonic power amplifying circuit respectively and exist
Continuous under operating frequency f1 is put against the optimal base natural impedance of F class amplification mode and the continuous F class under operating frequency f2
The optimal base natural impedance of large model；
In step s 102, obtain third-order low-pass web original parameter by tabling look-up, and according to third-order low-pass web original
Parameter, design frequency and reference impedance carry out frequency and impedance transformation, obtain real number impedance-real number impedance transformer；
In step s 103, the parasitic network parameter of binding crystal pipe, by ADS by real number impedance-real number impedance transformation
Device is optimized for real number impedance-complex impedance changer, and described complex impedance is equal to described optimal base natural impedance；
In step S104, according to third-order low-pass web original parameter building topology structure, and by described topological structure
Electric capacity and inductance replace with transmission line.
As one embodiment of the invention, described inductance can be replaced with high-impedance transmission line, described electric capacity is replaced with
Low ESR open circuit minor matters transmission line.
Preferably, can further include after step S104:
Step S105, after described topological structure being connected with transistor, is emulated by HB, regulates the length of described transmission line
Degree, makes efficiency reach maximum.
As one embodiment of the invention, in conjunction with Fig. 1, output matching network, 1 is star-like transmission line structure, including:
First transmission line TL1, the second transmission line TL2, the 3rd transmission line TL3, the 4th transmission line TL4, the 5th transmission line
TL5, the 6th transmission line TL6, the 7th transmission line TL7, the 8th transmission line TL8, the 9th transmission line TL9, the tenth transmission line TL10；
The input that one end is output matching network of the first transmission line TL1, the other end of the first transmission line TL1 simultaneously with
Second transmission line TL2, the 3rd transmission line TL3, one end of the 4th transmission line TL4 connect, and the other end of the second transmission line TL2 is defeated
Go out the offset side of matching network, the other end of the 4th transmission line TL4 be simultaneously connected with the 5th transmission line TL5, the 6th transmission line TL6,
One end of 7th transmission line TL7, the other end of the 7th transmission line TL7 be simultaneously connected with the 8th transmission line TL8, the 9th transmission line TL9,
One end of tenth transmission line TL10, the outfan that the other end is output matching network of the tenth transmission line TL10.
In embodiments of the present invention, if the mid frequency that f1 is lower half sideband, f2 is the mid frequency of upper half sideband, f1 and
There is such approximation relation: f1=2/3f2 in f2.Owing to design output matching network makes lower sideband be operated in continuous against F class
Pattern, makes upper side band be operated in continuous F quasi-mode, then on this frequency of f1, harmonic power amplifying circuit is operated in standard
Inverse F quasi-mode, and harmonic power amplifying circuit is operated in the F quasi-mode of standard on this frequency of f2.
Continuous F power-like amplifier and continuous are combined against F power-like amplifier, by continuous against F class
Power amplifier mode of operation is excessive to continuous F power-like amplifier mode of operation, has widened single continuous harmonic wave
Control the design space of power-like amplifier, effectively the efficiency of continuous harmonic controling power-like amplifier is increased to greater than
60%, relative bandwidth is increased to greater than 80%, and harmonic impedance mates simply, easily realizes.
The another object of the embodiment of the present invention is, it is provided that a kind of harmonic power using above-mentioned high efficiency height broadband is amplified
The radio-frequency power amplifier of circuit.
These are only presently preferred embodiments of the present invention, not in order to limit the present invention, all spirit in the present invention and
Any amendment, equivalent and the improvement etc. made within principle, should be included within the scope of the present invention.
Claims (10)
1. the harmonic power amplifying circuit in a high efficiency height broadband, it is characterised in that described harmonic power amplifying circuit includes:
Input matching network, transistor and output matching network；
The input of described input matching network is the input of described harmonic power amplifying circuit, described input matching network
Outfan is connected with the grid of described transistor, and the drain electrode of described transistor is connected with the input of described output matching network,
The source ground of described transistor, the outfan of described output matching network is the outfan of described harmonic power amplifying circuit；
Described output matching network makes described harmonic power amplifying circuit lower sideband be operated in continuous against F class amplification mode, makes
Described harmonic power amplifying circuit upper side band is operated in continuous F class amplification mode；
Described output matching network forms low pass filter with the parasitic network of described transistor.
2. harmonic power amplifying circuit as claimed in claim 1, it is characterised in that described input matching network is fourth order low-pass
Wave filter.
3. harmonic power amplifying circuit as claimed in claim 1, it is characterised in that described harmonic power amplifying circuit lower sideband
The mid frequency relation of mid frequency and upper half sideband be:
F1=2/3f2, wherein f1 is the mid frequency of lower half sideband, and f2 is the mid frequency of upper half sideband.
4. harmonic power amplifying circuit as claimed in claim 1, it is characterised in that described transistor is GaN transistor, described
The operating frequency of transistor is 0-6GHz, and the output of described transistor is 10W.
5. harmonic power amplifying circuit as claimed in claim 1, it is characterised in that described output matching network and described crystal
The parasitic network of pipe forms third-order low-pass filter, and the input of the parasitic network of described transistor connects the intrinsic leakage of transistor
Pole, the outfan of the parasitic network of described transistor connects the input of described output matching network；
The topological structure of described third-order low-pass filter includes:
Inductance L1, inductance L2, inductance L3, electric capacity C1, electric capacity C2, electric capacity C3；
The input that one end is described parasitic network of described inductance L1, the other end of described inductance L1 is connect by described electric capacity C1
Ground, the other end of described inductance L1 also one end with described inductance L2 is connected, and the other end of described inductance L2 is by described electric capacity
C2 ground connection, the other end of described inductance L2 also one end with described inductance L3 is connected, the other end of described inductance L3 be described in post
The outfan of raw network is by described electric capacity C3 ground connection.
6. harmonic power amplifying circuit as claimed in claim 1, it is characterised in that described output matching network is star-like transmission
Line structure, including:
First transmission line, the second transmission line, the 3rd transmission line, the 4th transmission line, the 5th transmission line, the 6th transmission line, the 7th biography
Defeated line, the 8th transmission line, the 9th transmission line, the tenth transmission line；
The input that one end is described output matching network of described first transmission line, the other end of described first transmission line is simultaneously
It is connected with described second transmission line, described 3rd transmission line, one end of described 4th transmission line, another of described second transmission line
End is the offset side of described output matching network, and the other end of described 4th transmission line is simultaneously connected with described 5th transmission line, institute
Stating the 6th transmission line, one end of described 7th transmission line, the other end of described 7th transmission line is simultaneously connected with described 8th transmission
Line, described 9th transmission line, one end of described tenth transmission line, the other end of described tenth transmission line is described output matching net
The outfan of network.
7. a radio-frequency power amplifier, it is characterised in that described radio-frequency power amplifier includes such as any one of claim 1-6
Described harmonic power amplifying circuit.
8. a method for designing for output matching network, described output matching network is as described in any one of claim 1-6
Output matching network in harmonic power amplifying circuit, it is characterised in that described method includes:
Use emulation tool to obtain described harmonic power amplifying circuit continuous under operating frequency f1 respectively and amplify mould against F class
The optimal base natural impedance of formula and the optimal base natural impedance of the continuous F class amplification mode under operating frequency f2；
Third-order low-pass web original parameter is obtained by tabling look-up, and according to third-order low-pass web original parameter, design frequency and ginseng
Examine impedance and carry out frequency and impedance transformation, obtain real number impedance-real number impedance transformer；
The parasitic network parameter of binding crystal pipe, is optimized for real number impedance-complex impedance by real number impedance-real number impedance transformer
Changer, described complex impedance is equal to described optimal base natural impedance；
According to third-order low-pass web original parameter building topology structure, and the electric capacity in described topological structure and inductance are replaced with
Transmission line.
9. method as claimed in claim 8, it is characterised in that described inductance is replaced with high-impedance transmission line, by described electricity
Hold and replace with Low ESR open circuit minor matters transmission line.
10. method as claimed in claim 8, it is characterised in that described according to third-order low-pass web original parameter building topology
Structure, and also include after the electric capacity in described topological structure and inductance are replaced with the step of transmission line:
After described topological structure being connected with transistor, regulated the length of described transmission line by emulation, make efficiency reach maximum.
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