CN109241578A - Low pass filter design method and device - Google Patents
Low pass filter design method and device Download PDFInfo
- Publication number
- CN109241578A CN109241578A CN201810923914.3A CN201810923914A CN109241578A CN 109241578 A CN109241578 A CN 109241578A CN 201810923914 A CN201810923914 A CN 201810923914A CN 109241578 A CN109241578 A CN 109241578A
- Authority
- CN
- China
- Prior art keywords
- pass filter
- capacitor
- low
- capacitance
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Amplifiers (AREA)
- Filters And Equalizers (AREA)
Abstract
A kind of low pass filter design method and device, the low-pass filter are used for RF front-end circuit, and the RF front-end circuit includes antenna circuit, and the low-pass filter and the antenna circuit couple；The low-pass filter includes: first capacitor, the second capacitor and bonding line, and the bonding line is the conducting wire between the pin conductive gasket corresponding with the pin of antenna circuit connection；The design method includes: to obtain the corresponding equivalent inductance of the bonding line；According to the quality factor of preset low-pass filter, the equivalent inductance and preset resonance frequency, the capacitance of the first capacitor, the capacitance of second capacitor are determined；According to the capacitance of the first capacitor, the capacitance of second capacitor, the low-pass filter is designed.Above scheme can reduce chip area, improve the output power and efficiency of power amplifier.
Description
Technical field
The present invention relates to radio frequency arts more particularly to a kind of low pass filter design method and devices.
Background technique
In radio frequency circuit system, in order to increase the transmission range of radiofrequency signal, power amplifier needs to have certain
Output power.Currently, radiofrequency signal is sent by 50 ohm antennas, and the output impedance of power amplifier is typically not equal to 50 Europe
Nurse, therefore, being matched the output impedance of power amplifier by passive match circuit is 50 ohm, to realize impedance matching.
Passive match circuit may include (referring to inside bare chip) that match circuit and piece are outer (referring to outside bare chip) in piece
Match circuit.The higher cost of piece outer match circuit is not suitable for being applied to inexpensive product.Therefore, refer to meeting basic fundamental
In the case of target, to save cost, match circuit in piece is generallyd use.In piece match circuit can using low pass LC filter or
Person's notch filter.
In the prior art, match circuit uses inductance in piece in piece.Inductance volume is larger in piece, occupies in the chips
Biggish chip area, higher cost；In addition, the quality factor (QualityFactor, Q value) of inductance are lower in piece, to power
The output power and efficiency of amplifier generate certain negative effect.
Summary of the invention
While what the embodiment of the present invention solved is how to reduce chip area, power amplification in RF front-end circuit is improved
The output power and efficiency of device.
In order to solve the above technical problems, the present invention provides a kind of low pass filter design method, the low-pass filter
For RF front-end circuit, the RF front-end circuit includes antenna circuit, the low-pass filter and the antenna circuit coupling
It connects；The low-pass filter includes: first capacitor, the second capacitor and bonding line, and the bonding line is to connect with antenna circuit
Pin conductive gasket corresponding with the pin between conducting wire, the first end of the first capacitor is arranged in the bonding line
There are parasitic inductances between the first end of second capacitor, and on the bonding line；The design method includes: to obtain institute
State the corresponding equivalent inductance of bonding line；According to the quality factor of preset low-pass filter, the equivalent inductance and preset
Resonance frequency determines the first of the capacitance of the first capacitor, the capacitance of second capacitor and the match circuit
Impedance；According to the capacitance of the first capacitor, the capacitance of second capacitor, the low-pass filter is designed.
Optionally, the RF front-end circuit further include: power amplifier and match circuit, in which: the power is put
The output end of big device and the input terminal of the match circuit couple；The output end of the match circuit and the low-pass filter
Input terminal coupling, suitable for being the first impedance by the output impedance matching of the power amplifier；The low-pass filter, output end
It couples with the antenna circuit, is filtered suitable for the output signal to the match circuit, and by first impedance matching
For the antenna impedance of the antenna circuit.
Optionally, the capacitance C of the first capacitor is calculated using following formula1: C1=Q1/(ω0×Rm)；Using as follows
Formula calculates the capacitance C of second capacitor2: C2=Q2/(ω0×Rant)；Wherein, Q1+Q2=Q, Q are the low-pass filtering
The quality factor of device, Ri=(ω0× L)/Q, RantFor antenna resistance
It is anti-, ω0For the resonance frequency, L is the equivalent inductance of the bonding line, RmFor first impedance.
Optionally, the match circuit, output impedance matching when suitable for by the power amplifier Maximum Power Output
For first impedance.
Optionally, the low-pass filter is π type low-pass filter.
Optionally, the first capacitor is capacitor in piece, and second capacitor is the outer capacitor of piece.
The present invention also provides a kind of low pass filter design device, the low-pass filter is used for RF front-end circuit,
The RF front-end circuit includes antenna circuit, and the low-pass filter and the antenna circuit couple；The low-pass filter
It include: first capacitor, the second capacitor and bonding line, the bonding line is the pin and the pin pair connecting with antenna circuit
The conducting wire between conductive gasket answered, the bonding line be arranged in the first capacitor first end and second capacitor the
Between one end, and there are parasitic inductances on the bonding line；The design device includes: acquiring unit, for obtaining the key
The corresponding equivalent inductance of zygonema；Parameter determination unit, for the quality factor according to preset low-pass filter, the equivalent electricity
Sense and preset resonance frequency determine the capacitance of the first capacitor, the capacitance of second capacitor and described the
One impedance；Design cell designs described low for capacitance, the capacitance of second capacitor according to the first capacitor
Bandpass filter.
Optionally, the RF front-end circuit further include: power amplifier and match circuit, in which: the power is put
The output end of big device and the input terminal of the match circuit couple；The output end of the match circuit and the low-pass filter
Input terminal coupling, suitable for being the first impedance by the output impedance matching of the power amplifier；The low-pass filter, output end
It couples with the antenna circuit, is filtered suitable for the output signal to the match circuit, and by first impedance matching
For the antenna impedance of the antenna circuit.
Optionally, the parameter determination unit, for calculating the capacitance C of the first capacitor using following formula1: C1
=Q1/(ω0×Rm)；The capacitance C of second capacitor is calculated using following formula2: C2=Q2/(ω0×Rant)；Wherein, Q1+
Q2=Q, Q are the quality factor of the low-pass filter,Ri=(ω0×
L)/Q, RantFor the antenna impedance, ω0For the resonance frequency, L is the equivalent inductance of the bonding line, RmIt is described first
Impedance.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
Pass through the resonance frequency of the equivalent inductance of bonding line, the quality factor of low-pass filter and low-pass filter, meter
Calculation obtains the capacitance of first capacitor in low-pass filter, the capacitance of the second capacitor, to complete the design of low-pass filter.
Designed obtained low-pass filter in the embodiment of the present invention generates, not according to parasitic inductance design present on bonding line
Have and increase inductance in piece, therefore chip area can be effectively reduced.In addition, the Q value of the parasitic inductance of bonding line is higher than electricity in piece
The Q value of sense, therefore, the output power and efficiency of the power amplifier in RF front-end circuit are effectively promoted.
In the low pass filter, the function of inductance is realized according to the parasitic inductance on bonding line, therefore in low-pass filtering
Without using inductance in piece or piece external inductance in device, so as to reduce the piece inner area of low-pass filter or without piece dispatch from foreign news agency
Sense.In addition, the Q value of the parasitic inductance of bonding line is higher than the Q value of inductance in piece, the harmonics restraint energy of low-pass filter can be improved
Power.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of one of embodiment of the present invention RF front-end circuit；
Fig. 2 is the equivalent circuit diagram of one of embodiment of the present invention RF front-end circuit；
Fig. 3 is the flow chart of one of embodiment of the present invention low pass filter design method；
Fig. 4 is the structural schematic diagram of one of embodiment of the present invention low pass filter design device.
Specific embodiment
In the prior art, match circuit uses inductance in piece in piece.Inductance volume is larger in piece, occupies in the chips
Biggish chip area, in addition, the Q value of inductance is small in piece, the output power and efficiency to power amplifier generate certain bear
Face is rung.
In embodiments of the present invention, pass through the equivalent inductance of bonding line, the quality factor of low-pass filter and low pass filtered
The capacitance of first capacitor in low-pass filter, the capacitance of the second capacitor is calculated, to complete in the resonance frequency of wave device
The design of low-pass filter.Designed obtained low-pass filter in the embodiment of the present invention, according to parasitic present on bonding line
Inductor design generates, and there is no inductance in increase piece, therefore chip area can be effectively reduced.In addition, the parasitism electricity of bonding line
The Q value of sense is higher than the Q value of inductance in piece, and therefore, the output power and efficiency of the power amplifier in RF front-end circuit obtain
Effectively promoted.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
In specific implementation, low-pass filter designed in the embodiment of the present invention can be used for RF front-end circuit.Cause
This, before the low pass filter design method provided in the embodiment of the present invention is described in detail, first to radio-frequency front-end electricity
Road is illustrated.
Referring to Fig.1, the embodiment of the invention provides a kind of RF front-end circuits, comprising: power amplifier 11, match circuit
12, low-pass filter 13 and antenna circuit 14, in which:
Power amplifier 11 input terminal input pass through modulated radiofrequency signal, the output end of power amplifier 11 with
Input terminal coupling with circuit 12；
The output end of match circuit 12 and the input terminal of low-pass filter 13 couple；
The output end and antenna circuit 14 of low-pass filter 13 couple.
In specific implementation, a part of low-pass filter 13, power amplifier 11 and match circuit 12 can be set
In same encapsulation chip 10, another part and antenna circuit 14 of low-pass filter 13 be can be set in encapsulation chip 10
It is external.
In specific implementation, it is the first impedance that match circuit 12, which can match the output impedance of power amplifier 11,.?
In the embodiment of the present invention, impedance A is matched can be with for the meaning of impedance B are as follows: by carrying out matching treatment to impedance A, so that
With treated, output impedance A is equal with impedance B.That is, after match circuit 12, the output of power amplifier 11
Impedance is the first impedance.
In embodiments of the present invention, output impedance when match circuit 12 can be by 11 Maximum Power Output of power amplifier
Matching is the first impedance.In practical applications, it can be drawn by load and move (load pull) emulation to determine power amplifier 11
Output impedance when Maximum Power Output.Power amplifier 11 is obtained with other methods it is understood that can also adopt
Output impedance when Maximum Power Output.The method of output impedance when specific acquisition 11 Maximum Power Output of power amplifier
Protection scope of the present invention is not construed as limiting.
In practical applications it is found that load pull can by change output end load, measure system under test (SUT) parameter and
Attribute.
In specific implementation, low-pass filter 13 can carry out low-pass filtering treatment to the output signal of match circuit 12,
And by the first impedance matching be antenna circuit 14 antenna impedance.That is, the output impedance of power amplifier 11 is being passed through
It is equal with the antenna impedance of antenna circuit 14 after the processing of match circuit 12 and low-pass filter 13.
For example, the antenna impedance of antenna circuit 14 is 50 ohm.Therefore, the output impedance of power amplifier 11 is through overmatching
Become 50 ohm after the processing of circuit 12 and low-pass filter 13.
It is understood that the antenna impedance of antenna circuit 14 may be other values.When the antenna of antenna circuit 14 hinders
When resisting for other values, the above method can also be used, the output impedance of power amplifier 11 be matched as the day of antenna circuit 14
Line impedence.
In embodiments of the present invention, low-pass filter 13 may include bonding line and capacitor namely low-pass filter 13
It can be made of bonding line and capacitor.Bonding line described in the embodiment of the present invention are as follows: setting is connect with antenna circuit 14
Pin conductive gasket corresponding with the pin between conducting wire.For example, the pin connecting with antenna circuit 14 is pin_
Antenna, then bonding line is the conducting wire for connecting pin pin_antenna conductive gasket corresponding with pin pin_antenna.
There are parasitic inductances on bonding line, in embodiments of the present invention, low-pass filter 13 can according to capacitor and
Parasitic inductance on bonding line generates.That is, not making in the low-pass filter 13 provided in the embodiment of the present invention
With inductance in piece, but the parasitic inductance on bonding line is utilized, therefore the area of chip can be reduced.
It continues with referring to Fig.1, the principle of the low-pass filter 13 and its building that provide in the embodiment of the present invention is carried out
Explanation.
In specific implementation, low-pass filter 13 may include: first capacitor 132, the second capacitor 133 and bonding line
131, in which: bonding line 131 is arranged between the first end of first capacitor 132 and the first end of the second capacitor 133；First electricity
Hold 132 first end conductive gasket corresponding with the connection pin of antenna circuit 14, the first end of bonding line 131, match circuit
12 output end coupling, second end ground connection；The first end of second capacitor 133 and pin, the bonding line 131 for connecting antenna circuit 14
Second end, antenna circuit input terminal coupling, second end ground connection.
In specific implementation, first capacitor 132 can be capacitor in piece, and the second capacitor 133 can be the outer capacitor of piece.
In low-pass filter 13, the function of inductance is realized according to the parasitic inductance on bonding line 131, therefore in low pass
Without using inductance in piece or piece external inductance in filter 13, so as to reduce the area of low-pass filter 13.In addition, key
The Q value of the parasitic inductance of zygonema 131 is higher than the Q value of inductance in piece, can be improved the harmonic inhibition capability of low-pass filter 13.
In practical applications it is found that the equivalent inductance of bonding line 131 is related to the length of bonding line 131, therefore, specific
It, can be previously according to the length and packaged type of bonding line 131, to calculate the equivalent inductance of bonding line 131 in implementation.It is counting
After calculation obtains the equivalent inductance of bonding line 131, the Q value of low-pass filter 13 can be determined.The Q value of low-pass filter 13 is smaller
When, corresponding filtering performance is poor, and harmonic inhibition capability is poor；It, can be to low-pass filtering when the Q value of low-pass filter 13 is larger
The variation of each component parameter in device 13 is more sensitive, causes consistency poor.Therefore, Q value can be according to harmonics restraint
Specific requirement is set.
It, can be according to bonding line after the Q value of the equivalent inductance and low-pass filter 13 that get bonding line 131
The resonance frequency of 131 equivalent inductance, the Q value of low-pass filter 13 and preset low-pass filter 13, calculates separately to obtain
The capacitance of first capacitor 132, the capacitance and the first impedance of the second capacitor 133.
Below the capacitance to the capacitance of first capacitor 132, the second capacitor 133 and the calculating process of the first impedance into
Row explanation.
After the Q value for obtaining the corresponding equivalent inductance of bonding line 131 and low-pass filter, can first it be calculated
Between variable Ri: Ri=(ω0× L)/Q, wherein ω0For resonance frequency, L is the corresponding equivalent inductance of bonding line 131, RiIn only
Between variable and and do not have actual physical significance.
Equivalent inductance is split as the first inductance and the second inductance, the inductance value of the first inductance is L1, the second inductance
Inductance value is L2, L=L1+L2.Referring to Fig. 2, the equivalent circuit of one of embodiment of the present invention RF front-end circuit is given
Figure.
In Fig. 2, the first L-network, the first L shape are formed by first capacitor 132, the first inductance 31 and first resistor 33
The corresponding Q value of network is Q1, andThe corresponding resistance value of first resistor 33 is first
Impedance Rm。
Second L-network is formed by the second capacitor 133, the second inductance 32 and antenna impedance 34, the second L-network is corresponding
Q value be Q2, andThus, it is possible to which Q is calculated2And L2。
Finally, the capacitance C of first capacitor 132 is calculated1Are as follows:
C1=Q1/(ω0×Rm)；
The capacitance C of the second capacitor 133 is calculated2Are as follows:
C2=Q2/(ω0×Rant)。
Wherein, Q=Q1+Q2, Ri=(ω0× L)/Q, due to ω0, L and Q value be it is known that it is consequently possible to calculate obtaining
Ri。RantUsually 50 ohm of fixed value, according to RiAnd RantQ can be calculated2.By Q=Q1+Q2Q is calculated1, in turn
R is calculatedm, C is thus calculated1And C2。
In specific implementation, in the capacitance C for the first capacitor 132 being calculated1, the second capacitor 133 capacitance C2With
And the corresponding first impedance R of match circuit 12mIt later, can be according to C1、C2Design low-pass filter 13, and according to designed
Low-pass filter 13 and according to RmThe match circuit 12 of design, designs corresponding RF front-end circuit.
It can be seen that the low-pass filter of RF front-end circuit includes bonding line and capacitor, exists on bonding line and post
Raw inductance, according to parasitic inductance and capacitor, to form low-pass filter.In other words, in the low pass filter, not
Increase inductance in piece, therefore chip area can be effectively reduced.In addition, the Q value of the parasitic inductance of bonding line is higher than inductance in piece
Q value, therefore, the output power and efficiency of power amplifier are effectively promoted.
In embodiments of the present invention, low-pass filter can be π type low-pass filter, or other kinds of low pass
Filter.
Referring to Fig. 3, one of embodiment of the present invention low pass filter design method is given, below by way of specific steps
It is described in detail.
Step S301 obtains the corresponding equivalent inductance of the bonding line.
In specific implementation, it is corresponding etc. that bonding line can be obtained previously according to the length and packaged type of bonding line
Imitate inductance.It is understood that other methods can be used also to obtain the equivalent inductance of bonding line, it is not limited in above-mentioned
The method of explanation.For example, actual package measurement inductance is less than normal, the pin and conductive gasket that can be connected by adjusting antenna circuit
Position, so that bonding line is elongated；Conversely, actual package measurement inductance is bigger than normal, the pin that can be connected by adjusting antenna circuit
With conductive gasket position, so that bonding line shortens, or effect in parallel is generated using more bonding lines.
Step S302, according to the quality factor of preset low-pass filter, the equivalent inductance and preset resonance frequency
Rate determines the capacitance of the first capacitor, the capacitance of second capacitor.
In specific implementation, the capacitance C of first capacitor can be calculated using following formula1: C1=Q1/(ω0×Rm)；It adopts
The capacitance C of the second capacitor is calculated with following formula2: C2=Q2/(ω0×Rant)；Wherein, Q1+Q2=Q, Q are low-pass filter
Quality factor,Ri=(ω0× L)/Q, RantFor antenna impedance, ω0
For resonance frequency, L is the equivalent inductance of bonding line, RmFor the first impedance.
Due to ω0, L and Q value be it is known that it is consequently possible to calculate obtaining Ri.In practical applications it is found that RantFor
Know, and RantIt=50 ohm, therefore, can be according to RiAnd RantQ is calculated1.Due to Q it is known that Q is calculated1Later,
Q can be obtained2.According to Q2And Ri, the first impedance R can be calculatedm。
In specific implementation, output impedance matching when can be by power amplifier Maximum Power Output is the first impedance
Rm, output impedance matching when power amplifier can also be exported to other power is the first impedance Rm。
In specific implementation, the calculating process in step S302 and principle are referred to Fig. 1 and the above-mentioned implementation of the present invention
The content provided in example, is not repeated herein.
Step S303 designs the low pass filtered according to the capacitance of the first capacitor, the capacitance of second capacitor
Wave device.
In specific implementation, using step S302 obtain first capacitor capacitance and the second capacitor capacitance it
Afterwards, it can design to obtain corresponding low-pass filter.
Referring to Fig. 4, the structural schematic diagram of one of embodiment of the present invention low pass filter design device is given.This hair
Low-pass filter in bright embodiment is used for RF front-end circuit, and the RF front-end circuit includes antenna circuit, the low pass
Filter and the antenna circuit couple；The low-pass filter includes: first capacitor, the second capacitor and bonding line, described
Bonding line is the conducting wire between the pin conductive gasket corresponding with the pin of antenna circuit connection, the bonding line setting
Between the first end of the first capacitor and the first end of second capacitor, and there are parasitic inductances on the bonding line.
In embodiments of the present invention, low pass filter design device 40 includes: acquiring unit 401, parameter determination unit 402 and design
Unit 403, in which:
Acquiring unit 401, for obtaining the corresponding equivalent inductance of the bonding line；
Parameter determination unit 402, for according to the quality factor of preset low-pass filter, the equivalent inductance and pre-
If resonance frequency, determine the capacitance of the first capacitor, the capacitance of second capacitor and first impedance；
Design cell 403 designs institute for capacitance, the capacitance of second capacitor according to the first capacitor
State low-pass filter.
In specific implementation, the RF front-end circuit further include: power amplifier and match circuit, in which: described
The input terminal of the output end of power amplifier and the match circuit couples；The output end of the match circuit and the low pass filtered
The input terminal of wave device couples, suitable for being the first impedance by the output impedance matching of the power amplifier；The low-pass filter,
Output end and the antenna circuit couple, and are filtered suitable for the output signal to the match circuit, and described first is hindered
Anti- matching is the antenna impedance of the antenna circuit.
In specific implementation, the parameter determination unit 402 can be used for calculating the first capacitor using following formula
Capacitance C1: C1=Q1/(ω0×Rm)；The capacitance C of second capacitor is calculated using following formula2: C2=Q2/(ω0×
Rant)；Wherein, Q1+Q2=Q, Q are the quality factor of the low-pass filter,
Ri=(ω0× L)/Q, RantFor the antenna impedance, ω0For the resonance frequency, L is the equivalent inductance of the bonding line, Rm
For first impedance.
Those of ordinary skill in the art will appreciate that all or part of the steps in the various methods of above-described embodiment is can
It is completed with indicating relevant hardware by program, which can be stored in a computer readable storage medium, storage
Medium may include: ROM, RAM, disk or CD etc..
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (9)
1. a kind of low pass filter design method, which is characterized in that the low-pass filter is used for RF front-end circuit, described to penetrate
Frequency front-end circuit includes antenna circuit, and the low-pass filter and the antenna circuit couple；The low-pass filter includes:
One capacitor, the second capacitor and bonding line, the pin that the bonding line is and antenna circuit connects is corresponding with the pin to lead
Electricity liner between conducting wire, the bonding line be arranged in the first capacitor first end and second capacitor first end it
Between, and there are parasitic inductances on the bonding line；The design method includes:
Obtain the corresponding equivalent inductance of the bonding line；
According to the quality factor of preset low-pass filter, the equivalent inductance and preset resonance frequency, described is determined
The capacitance of the capacitance of one capacitor, second capacitor；
According to the capacitance of the first capacitor, the capacitance of second capacitor, the low-pass filter is designed.
2. low pass filter design method as described in claim 1, which is characterized in that the RF front-end circuit further include:
Power amplifier and match circuit, in which:
The input terminal of the output end of the power amplifier and the match circuit couples；
The input terminal of the output end of the match circuit and the low-pass filter couples, suitable for by the defeated of the power amplifier
Impedance matching is the first impedance out；
The low-pass filter, output end and the antenna circuit couple, and carry out suitable for the output signal to the match circuit
Filtering, and be the antenna impedance of the antenna circuit by first impedance matching.
3. low pass filter design method as claimed in claim 2, which is characterized in that calculate described first using following formula
The capacitance C of capacitor1: C1=Q1/(ω0×Rm)；
The capacitance C of second capacitor is calculated using following formula2: C2=Q2/(ω0×Rant)；
Wherein, Q1+Q2=Q, Q are the quality factor of the low-pass filter, Ri=(ω0× L)/Q, RantFor the antenna impedance, ω0For the resonance frequency, L is the bonding
The equivalent inductance of line, RmFor first impedance.
4. low pass filter design method as claimed in claim 2, which is characterized in that the match circuit, being suitable for will be described
Output impedance matching when power amplifier Maximum Power Output is first impedance.
5. low pass filter design method as described in claim 1, which is characterized in that the low-pass filter is π type low pass
Filter.
6. low pass filter design method as described in claim 1, which is characterized in that the first capacitor is capacitor in piece,
Second capacitor is the outer capacitor of piece.
7. a kind of low pass filter design device, which is characterized in that the low-pass filter is used for RF front-end circuit, described to penetrate
Frequency front-end circuit includes antenna circuit, and the low-pass filter and the antenna circuit couple；The low-pass filter includes:
One capacitor, the second capacitor and bonding line, the pin that the bonding line is and antenna circuit connects is corresponding with the pin to lead
Electricity liner between conducting wire, the bonding line be arranged in the first capacitor first end and second capacitor first end it
Between, and there are parasitic inductances on the bonding line；The design device includes:
Acquiring unit, for obtaining the corresponding equivalent inductance of the bonding line；
Parameter determination unit, for according to the quality factor of preset low-pass filter, the equivalent inductance and preset humorous
Vibration frequency determines the capacitance of the first capacitor, the capacitance of second capacitor；
Design cell designs the low pass filtered for capacitance, the capacitance of second capacitor according to the first capacitor
Wave device.
8. low pass filter design device as claimed in claim 7, which is characterized in that the RF front-end circuit further include:
Power amplifier and match circuit, in which: the input terminal of the output end of the power amplifier and the match circuit couples；
The input terminal of the output end of the match circuit and the low-pass filter couples, suitable for hindering the output of the power amplifier
Anti- matching is the first impedance；The low-pass filter, output end and the antenna circuit couple, suitable for the match circuit
Output signal is filtered, and is the antenna impedance of the antenna circuit by first impedance matching.
9. low pass filter design device as claimed in claim 8, which is characterized in that the parameter determination unit, for adopting
The capacitance C of the first capacitor is calculated with following formula1: C1=Q1/(ω0×Rm)；Described second is calculated using following formula
The capacitance C of capacitor2: C2=Q2/(ω0×Rant)；Wherein, Q1+Q2=Q, Q are the quality factor of the low-pass filter, Ri=(ω0× L)/Q, RantFor the antenna impedance, ω0It is described humorous
Vibration frequency, L are the equivalent inductance of the bonding line, RmFor first impedance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810923914.3A CN109241578B (en) | 2018-08-14 | 2018-08-14 | Low-pass filter design method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810923914.3A CN109241578B (en) | 2018-08-14 | 2018-08-14 | Low-pass filter design method and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109241578A true CN109241578A (en) | 2019-01-18 |
| CN109241578B CN109241578B (en) | 2023-04-07 |
Family
ID=65070110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810923914.3A Active CN109241578B (en) | 2018-08-14 | 2018-08-14 | Low-pass filter design method and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109241578B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113452338A (en) * | 2021-04-30 | 2021-09-28 | 昆明理工大学 | Method for compensating electric distance of alternating current transmission line by using Bessel passive low-pass filter |
| CN113759227A (en) * | 2021-08-24 | 2021-12-07 | 桂林电子科技大学 | Detection method of power device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050277399A1 (en) * | 2004-05-28 | 2005-12-15 | Rainer Kronberger | Transmitting arrangement, receiving arrangement, transceiver and method for operation of a transmitting arrangement |
| CN102098009A (en) * | 2010-12-20 | 2011-06-15 | 芯通科技（成都）有限公司 | Output match circuit of radio frequency (RF) power amplifier and design method thereof |
| CN102355223A (en) * | 2011-08-10 | 2012-02-15 | 锐迪科创微电子（北京）有限公司 | Single-chip GSM (Global System for Mobile Communications) radio-frequency antenna switch module and GSM radio-frequency front end |
| CN104242980A (en) * | 2014-09-01 | 2014-12-24 | 苏州大学 | Sub-1G radio frequency front-end circuit design based on RF energy detection and parameter adjustment method based on RF energy detection |
| CN104467776A (en) * | 2014-11-18 | 2015-03-25 | 锐迪科创微电子（北京）有限公司 | Single-chip radio frequency antenna switch module and radio frequency front end |
| CN106208972A (en) * | 2016-08-22 | 2016-12-07 | 深圳市华讯方舟微电子科技有限公司 | The harmonic power amplifying circuit in a kind of high efficiency height broadband and radio-frequency power amplifier |
| US20170040966A1 (en) * | 2014-02-28 | 2017-02-09 | Epcos Ag | Combined impedance matching and rf filter circuit |
| CN108134585A (en) * | 2017-12-12 | 2018-06-08 | 无锡中普微电子有限公司 | Rf power amplifier circuit and its ultra-wide band output matching circuit |
-
2018
- 2018-08-14 CN CN201810923914.3A patent/CN109241578B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050277399A1 (en) * | 2004-05-28 | 2005-12-15 | Rainer Kronberger | Transmitting arrangement, receiving arrangement, transceiver and method for operation of a transmitting arrangement |
| CN102098009A (en) * | 2010-12-20 | 2011-06-15 | 芯通科技（成都）有限公司 | Output match circuit of radio frequency (RF) power amplifier and design method thereof |
| CN102355223A (en) * | 2011-08-10 | 2012-02-15 | 锐迪科创微电子（北京）有限公司 | Single-chip GSM (Global System for Mobile Communications) radio-frequency antenna switch module and GSM radio-frequency front end |
| US20170040966A1 (en) * | 2014-02-28 | 2017-02-09 | Epcos Ag | Combined impedance matching and rf filter circuit |
| CN104242980A (en) * | 2014-09-01 | 2014-12-24 | 苏州大学 | Sub-1G radio frequency front-end circuit design based on RF energy detection and parameter adjustment method based on RF energy detection |
| CN104467776A (en) * | 2014-11-18 | 2015-03-25 | 锐迪科创微电子（北京）有限公司 | Single-chip radio frequency antenna switch module and radio frequency front end |
| CN106208972A (en) * | 2016-08-22 | 2016-12-07 | 深圳市华讯方舟微电子科技有限公司 | The harmonic power amplifying circuit in a kind of high efficiency height broadband and radio-frequency power amplifier |
| CN108134585A (en) * | 2017-12-12 | 2018-06-08 | 无锡中普微电子有限公司 | Rf power amplifier circuit and its ultra-wide band output matching circuit |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113452338A (en) * | 2021-04-30 | 2021-09-28 | 昆明理工大学 | Method for compensating electric distance of alternating current transmission line by using Bessel passive low-pass filter |
| CN113452338B (en) * | 2021-04-30 | 2023-12-19 | 昆明理工大学 | Method for compensating electric distance of alternating current transmission line by using Bessel passive low-pass filter |
| CN113759227A (en) * | 2021-08-24 | 2021-12-07 | 桂林电子科技大学 | Detection method of power device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109241578B (en) | 2023-04-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105631109B (en) | A kind of design method of radio frequency ultra wide band high efficiency power amplifier | |
| CN110138350A (en) | A kind of power amplifier with harmonic suppression circuit | |
| CN206226382U (en) | Radio-frequency power amplifier and its output matching circuit | |
| CN105811888A (en) | Radio frequency power amplifier output match circuit structure and designing method thereof | |
| CN206041939U (en) | RF power amplifier output matching circuit structure | |
| CN109241578A (en) | Low pass filter design method and device | |
| CN103562736A (en) | Simple and minimally invasive methods and systems for sensing and computing load impedance | |
| CN201523376U (en) | Mobile terminal and noise signal inhibition circuit thereof | |
| CN104242980B (en) | The design of a kind of Sub-1G RF front-end circuit based on RF energy measuring and parameter regulation means | |
| CN105656436A (en) | CMOS power amplifier matching circuit | |
| CN114710170A (en) | Medium-long wave automatic antenna tuning circuit and system | |
| CN102751960B (en) | A kind of radio frequency low pass filter being applied to LTE | |
| CN110289819B (en) | Radio frequency front end and output matching network of radio frequency power amplifier thereof | |
| US10148295B2 (en) | Semiconductor device and radio communication device | |
| CN102375101B (en) | Passive device test de-embedding method by adopting different layers of metal lead to connect out | |
| CN204304932U (en) | Radio-frequency power amplifier output matching circuit | |
| CN208548873U (en) | A kind of low-noise filter | |
| CN214851225U (en) | Trap circuit for suppressing local oscillator leakage of frequency mixer | |
| CN104333339A (en) | Adjustable transformer | |
| CN204206126U (en) | A kind of adjustable transformer | |
| CN102761315A (en) | Small group delay crystal filter | |
| CN203300775U (en) | Weak coupling cavity filter | |
| CN206850734U (en) | A kind of match circuit sampling apparatus | |
| CN203151441U (en) | Numerical control frequency hopping filter | |
| CN204882802U (en) | Signal conditioning circuit of hyperfrequency sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230913 Address after: 3F, Building 12, Fenghuang Garden, No. 1515 Gumei Road, Xuhui District, Shanghai, 200030 Patentee after: SHANGHAI EASTSOFT MICROELECTRONICS Co.,Ltd. Patentee after: QINGDAO EASTSOFT COMMUNICATION TECHNOLOGY Co.,Ltd. Address before: 200235 5th floor, 2A / F, Tianhua Information Technology Park, 299 Longcao Road, Xuhui District, Shanghai Patentee before: SHANGHAI EASTSOFT MICROELECTRONICS Co.,Ltd. |