CN205945655U - Harmonic power amplification circuit and RF power amplifier in high broadband of high efficiency - Google Patents

Abstract

The utility model is suitable for a RF communications field provides a harmonic power amplification circuit and RF power amplifier in high broadband of high efficiency, and this circuit includes: input matching network, transistor and output matching network, input matching network's output is connected to the grid of transistor, and the source electrode ground connection of output matching network's input, transistor is connected in the drain electrode of transistor, the mode is enlargied in the contrary F class of continuous type to the work of output matching network messenger harmonic power amplification circuit lower sideband, makes the work of harmonic power amplification circuit upper sideband in the enlarged mode of continuous type F class, the parasitic network formation low pass filter of output matching network and transistor. The utility model discloses a contrary F class power amplifier mode of continuous type is excessive to continuous type F class power amplifier mode's, brings up to continuous type harmonic control class power amplifier's efficiency effectively to be greater than 60%, brings up to the relative bandwidth to be greater than 80% to harmonic impedance match is simple, easy to be realized.

Description

A kind of harmonic power amplifying circuit in the high broadband of high efficiency and radio-frequency power amplifier

Technical field

This utility model belongs to field of radio frequency communication, the harmonic power amplifying circuit in the high broadband of more particularly, to a kind of high efficiency And radio-frequency power amplifier.

Background technology

Current 5th Generation Mobile Communication System is stronger and stronger to the compliance of communication standard, thus to radio-frequency power The bandwidth requirement of amplifier also more and more higher, meanwhile, with the development further of green economy, the effect to power amplifier for the market Rate also requires that more and more higher.And the power amplifier of high efficiency, high broadband is typically based primarily upon E power-like amplifier structure harmony Ripple controls the structure of power-like amplifier to be designed.

However, although E power-like amplifier structure is simple, efficiency high, because E power-like amplifier exists in theory Upper operational frequency limit, thus limit the application further in lower frequency range for the E power-like amplifier；

And for being applied to the harmonic controling power-like amplifier of higher operational frequency, such as F power-like amplifier and inverse F Power-like amplifier, not only needs to carry out the control of accurate harmonic impedance in transistor drain, and narrow bandwidth, in order to extend Bandwidth, has gone out continuouss harmonic controling power-like amplifier based on harmonic controling power-like amplifier structural development, including continuous Type F power-like amplifier and continuouss against F power-like amplifier, but, continuouss F power-like amplifier and continuouss are against F class Power amplifier needs simultaneously full in certain bandwidth when providing the efficiency being more than 70% and the relative bandwidth more than 50% Sufficient second harmonic and the impedance conditions of triple-frequency harmonics, bring huge challenge to the design of match circuit, and its complexity Distribution road is degrading efficiency to a certain extent.

Utility model content

The purpose of this utility model embodiment be to provide a kind of harmonic power amplifying circuit in the high broadband of high efficiency it is intended to Solve existing power amplification circuit and cannot realize high efficiency, high broadband simultaneously, and harmonic impedance mates easy problem.

This utility model embodiment is achieved in that a kind of harmonic power amplifying circuit in the high broadband of high efficiency, described Harmonic power amplifying circuit includes：

Input matching network, transistor, and

Make described harmonic power amplifying circuit lower sideband be operated in continuouss against F class amplification mode, make described harmonic power Amplifying circuit upper side band is operated in the output matching network of continuouss F class amplification mode；

The input of described input matching network is the input of described harmonic power amplifying circuit, described input pair net The outfan of network is connected with the grid of described transistor, and the drain electrode of described transistor is with the input of described output matching network even Connect, the source ground of described transistor, the outfan of described output matching network is the output of described harmonic power amplifying circuit End；

Described output matching network makes described harmonic power amplifying circuit lower sideband be operated in continuouss against F class amplification mould Formula, makes described harmonic power amplifying circuit upper side band be operated in continuouss F class amplification mode；

Described output matching network forms low pass filter with the parasitic network of described transistor.

Further, described input matching network is fourth order low-pass wave filter.

Further, the mid frequency of described harmonic power amplifying circuit lower sideband and the mid frequency of upper half sideband close It is to be：

F1=2/3f2, wherein f1 are the mid frequency of lower half sideband, and f2 is the mid frequency of upper half sideband.

Further, described transistor is GaN transistor, and the operating frequency of described transistor is 0-6GHz, described crystalline substance The output of body pipe is 10W.

Further, described output matching network and the parasitic network of described transistor form third-order low-pass filter, The input of the parasitic network of described transistor connects the intrinsic drain electrode of transistor, the outfan of the parasitic network of described transistor Connect the input of described output matching network；

The topological structure of described third-order low-pass filter includes：

Inductance L1, inductance L2, inductance L3, electric capacity C1, electric capacity C2, electric capacity C3；

One end of described inductance L1 is the input of described parasitic network, and the other end of described inductance L1 passes through described electric capacity C1 is grounded, and the other end of described inductance L1 is also connected with one end of described inductance L2, and the other end of described inductance L2 is by described Electric capacity C2 is grounded, and the other end of described inductance L2 is also connected with one end of described inductance L3, and the other end of described inductance L3 is institute The outfan stating parasitic network passes through described electric capacity C3 ground connection.

Further, described output matching network is star-like transmission line structure, including：

First transmission line, the second transmission line, the 3rd transmission line, the 4th transmission line, the 5th transmission line, the 6th transmission line, Seven transmission lines, the 8th transmission line, the 9th transmission line, the tenth transmission line；

One end of described first transmission line is the input of described output matching network, the other end of described first transmission line It is connected with one end of described second transmission line, described 3rd transmission line, described 4th transmission line simultaneously, described second transmission line The other end is the offset side of described output matching network, and the other end of described 4th transmission line is simultaneously connected with described 5th transmission Line, described 6th transmission line, one end of described 7th transmission line, the other end of described 7th transmission line is simultaneously connected with the described 8th Transmission line, described 9th transmission line, one end of described tenth transmission line, the other end of described tenth transmission line is described output The outfan of distribution network.

The another object of this utility model embodiment is, provides a kind of harmonic power using the high broadband of above-mentioned high efficiency The radio-frequency power amplifier of amplifying circuit.

Continuouss F power-like amplifier and continuouss are combined by this utility model embodiment against F power-like amplifier, Excessive to continuouss F power-like amplifier mode of operation against F power-like amplifier mode of operation by continuouss, widen list The design space of one continuouss harmonic controling power-like amplifier, effectively by continuouss harmonic controling power-like amplifier Efficiency is increased to greater than 60%, and relative bandwidth is increased to greater than 80%, and simple, the easy realization of harmonic impedance coupling.

Brief description

The structure chart of the harmonic power amplifying circuit in the high broadband of high efficiency that Fig. 1 provides for this utility model embodiment；

Fig. 2 is the Smith circle diagram of continuouss F power-like amplifier；

Fig. 3 is the Smith circle diagram against F power-like amplifier for the continuouss；

Output matching net in the harmonic power amplifying circuit in the high broadband of high efficiency that Fig. 4 provides for this utility model embodiment The topology diagram of the third-order low-pass filter that the parasitic network of network and transistor is formed；

In the harmonic power amplifying circuit in the high broadband of high efficiency that Fig. 5 provides for this utility model embodiment, transistor posts Raw network；

Output matching net in the harmonic power amplifying circuit in the high broadband of high efficiency that Fig. 6 provides for this utility model embodiment The flowage structure of the method for designing of network.

Specific embodiment

In order that the purpose of this utility model, technical scheme and advantage become more apparent, below in conjunction with accompanying drawing and enforcement Example, is further elaborated to this utility model.It should be appreciated that specific embodiment described herein is only in order to explain This utility model, is not used to limit this utility model.Additionally, institute in each embodiment of this utility model disclosed below As long as the technical characteristic being related to does not constitute conflict each other just can be mutually combined.

Continuouss F power-like amplifier and continuouss are combined by this utility model embodiment against F power-like amplifier, Excessive to continuouss F power-like amplifier mode of operation against F power-like amplifier mode of operation by continuouss, widen list The design space of one continuouss harmonic controling power-like amplifier, effectively by continuouss harmonic controling power-like amplifier Efficiency is increased to greater than 60%, and relative bandwidth is increased to greater than 80%, and simple, the easy realization of harmonic impedance coupling.

Below in conjunction with specific embodiment, realization of the present utility model is described in detail：

Fig. 1 shows the structure of the harmonic power amplifying circuit in the high broadband of high efficiency that this utility model embodiment provides, For convenience of description, illustrate only the part related to this utility model.

As this utility model one embodiment, the harmonic power amplifying circuit in the high broadband of this high efficiency can apply to any In radio-frequency power amplifier, including：

Input matching network 11, transistor M and output matching network 12；

The input of input matching network 11 is the electric capacity C in the input and bias unit of harmonic power amplifying circuit_i One end connect, electric capacity C_iThe other end be rf inputs, the grid of the outfan of input matching network 11 and transistor M is even Connect, the drain electrode of transistor M is connected with the input of output matching network 12, the source ground of transistor M, output matching network 12 Outfan be electric capacity C in outfan and the bias unit of harmonic power amplifying circuit_oOne end connect, electric capacity C_oAnother Hold as RF output end, the offset side of input matching network 11 passes through the inductance L in bias unit_GWith electric capacity C_bypass1Connect grid Source voltage V_GS, the offset side of output matching network 12 is by the inductance L in bias unit_DWith electric capacity C_bypass2Connect drain-source voltage V_DS；

Output matching network 12 makes harmonic power amplifying circuit lower sideband be operated in continuouss against F class amplification mode, makes humorous Wave power amplifying circuit upper side band is operated in continuouss F class amplification mode；

Output matching network 12 forms low pass filter with the parasitic network of transistor M.

In this utility model embodiment, theoretical according to Waveform Design, the current waveform of continuouss F power-like amplifier is Semisinusoidal, and voltage waveform is not unique, in the case of only considering triple-frequency harmonics, normalized voltage expression is as follows：

$v_{CF}=(1-\frac{2}{\sqrt{3}}cos\mathrm{\θ}+\frac{1}{3\sqrt{3}}cos3\mathrm{\θ})\×(1-\mathrm{\γ}sin\mathrm{\θ})---\left(1\right)$

Because the appearance of negative voltage can deteriorate efficiency, in order to ensure voltage non-negative, the span of γ is：-1≤γ ≤1.When γ=0, just obtain the F power-like amplifier voltage waveform of standard.

For continuouss are against F power-like amplifier, due to it and F power-like amplifier duality relation each other, therefore, exist In the case of only considering triple-frequency harmonics, continuouss uniquely determine against the voltage of F power-like amplifier, and its normalization expression formula is such as Under:

$v_{{\mathrm{CF}}^{-1}}=(1-\frac{2}{\sqrt{2}}cos\mathrm{\θ}+\frac{1}{2}cos2\mathrm{\θ})---\left(2\right)$

And current waveform is not unique, its normalization expression formula is as follows：

$v_{{\mathrm{CF}}^{-1}}=(i_{DC}-i_{1}cos\mathrm{\θ}+i_{3}cos3\mathrm{\θ})\×(1-\mathrm{\ξ}sin\mathrm{\θ})---\left(3\right)$

Wherein, i_DC=0.37, i₁=0.43, i₃=0.06.In order to ensure the non-negative of current waveform, the span of ξ It is：-1≤ξ≤1.When ξ=0, just obtain the inverse F power-like amplifier voltage waveform of standard.

According to formula：

$Z_n=-\frac{V_n}{I_n}---\left(4\right)$

Wherein, n represents the order of harmonic component.Voltage waveform and current waveform table by continuouss F power-like amplifier Reach formula, we can be derived that the impedance conditions of continuouss F power-like amplifier：

$\begin{array}{c}{Z}_F=\frac{2}{\sqrt{3}}{R}_{opt}+{\mathrm{j\γR}}_{opt}\\ Z_{2,F}=-j\frac{7\sqrt{3}\mathrm{\π}}{24}{\mathrm{\γR}}_{opt}\\ Z_{3,F}=\mathrm{\∞}\end{array}---\left(5\right)$

Wherein, R_optOptimum impedance for higher hamonic wave all standard B power-like amplifiers of short circuit.

Similar, we can derive continuouss against the impedance conditions of F power-like amplifier, for the convenience representing, We adopt the expression-form of admittance：

$\begin{array}{c}{G}_{F^{-1}}=\sqrt{2}{i}_1{G}_{opt}+j\sqrt{2}{i}_{DC}{\mathrm{\ξG}}_{opt}\\ G_{2,F^{-1}}=-j3\mathrm{\ξ}(i_1+i_3)G_{opt}\\ G_{3,F^{-1}}=\mathrm{\∞}\end{array}---\left(6\right)$

Wherein, G_opt=1/Ropt.

Expression formula (5) constitutes the design space of continuouss F power-like amplifier, the normalized impedance of Smith circle diagram It is set to R_opt, the expression on Smith circle diagram of the design space of such continuouss F power-like amplifier is just as shown in Figure 2.Expression Formula (6) constitutes continuouss against the design space of F power-like amplifier, equally the normalized impedance of Smith circle diagram is set to R_opt, such continuouss are just as shown in Figure 3 against the expression on Smith circle diagram for the design space of F power-like amplifier.

Because impedance of fundamental frequency is near round dot, and second harmonic impedance and triple-frequency harmonics impedance are all located on round edge, therefore Need a low pass filter as output matching.

So pass through to design an output matching network 12, make this harmonic power amplifying circuit lower sideband be operated in continuouss Inverse F class amplification mode, upper side band is operated in continuouss F class amplification mode, by continuouss against F power-like amplifier mode of operation Excessive to continuouss F power-like amplifier mode of operation, widen single continuouss harmonic controling power-like amplifier Design space, effectively improves efficiency and relative bandwidth.

Preferably, input matching network 11 could be arranged to fourth order low-pass wave filter, with respect to more piece impedance transformer, has Reduce to effect the area of input matching network.

Preferably, transistor M can select GaN transistor CGH40010F of Cree company, and its operating frequency is 0- 6GHz, typical output power is 10W.

Preferably, output matching network 12 and the parasitic network of transistor form third-order low-pass filter, reduce design Difficulty, and this method for designing can be flexibly applied to different operating frequency and different characteristic impedances.Wherein, transistor The input of parasitic network connects the intrinsic drain electrode of transistor, and the outfan of the parasitic network of transistor connects output matching network Input.

The topological structure of third-order low-pass filter referring to Fig. 4, including：

Inductance L1, inductance L2, inductance L3, electric capacity C1, electric capacity C2, electric capacity C3；

One end of inductance L1 is the input of parasitic network, and the other end of inductance L1 is grounded by electric capacity C1, inductance L1's The other end is also connected with one end of inductance L2, and the other end of inductance L2 is grounded by electric capacity C2, the other end of inductance L2 also with electricity One end of sense L3 connects, and the other end of inductance L3 is grounded by electric capacity C3 for the outfan of parasitic network.

The parasitic network of transistor referring to Fig. 5, including：

Inductance L_p, electric capacity C_dsWith electric capacity C_p；

Inductance L_pOne end be parasitic network input and electric capacity C_dsOne end connect, inductance L_pThe other end be parasitism The outfan of network and electric capacity C_pOne end connect, electric capacity C_pThe other end and electric capacity C_dsThe other end connect.

The flowage structure of the method for designing of output matching network 12, referring to Fig. 6, specifically includes following step：

In step S101, obtain described harmonic power amplifying circuit respectively with the loadpull emulation tool of ADS and exist The continuouss F class against the optimum impedance of fundamental frequency of F class amplification mode with operating frequency f2 for the continuouss under operating frequency f1 is put The optimum impedance of fundamental frequency of large model；

In step s 102, obtain third-order low-pass web original parameter by tabling look-up, and according to third-order low-pass web original Parameter, design frequency and reference impedance enter line frequency and impedance conversion, obtain real number impedance-real number impedance transformer；

In step s 103, real number impedance-real number impedance is converted by the parasitic network parameter of binding crystal pipe by ADS Device is optimized for real number impedance-complex impedance changer, and described complex impedance is equal to described optimum impedance of fundamental frequency；

In step S104, according to third-order low-pass web original parameter building topology structure, and by described topological structure Electric capacity and inductance replace with transmission line.

As this utility model one embodiment, described inductance can be replaced with high-impedance transmission line, described electric capacity is replaced It is changed to Low ESR open circuit minor matters transmission line.

Preferably, can further include after step S104：

Step S105, after described topological structure is connected with transistor, is emulated by HB, adjusts the length of described transmission line Degree, makes efficiency reach maximum.

As this utility model one embodiment, in conjunction with Fig. 1, output matching network, 1 is star-like transmission line structure, including：

First transmission line TL1, the second transmission line TL2, the 3rd transmission line TL3, the 4th transmission line TL4, the 5th transmission line TL5, the 6th transmission line TL6, the 7th transmission line TL7, the 8th transmission line TL8, the 9th transmission line TL9, the tenth transmission line TL10；

One end of first transmission line TL1 is the input of output matching network, the other end of the first transmission line TL1 simultaneously with Second transmission line TL2, the 3rd transmission line TL3, one end of the 4th transmission line TL4 connect, and the other end of the second transmission line TL2 is defeated Go out the offset side of matching network, the other end of the 4th transmission line TL4 be simultaneously connected with the 5th transmission line TL5, the 6th transmission line TL6, One end of 7th transmission line TL7, the other end of the 7th transmission line TL7 be simultaneously connected with the 8th transmission line TL8, the 9th transmission line TL9, One end of tenth transmission line TL10, the other end of the tenth transmission line TL10 is the outfan of output matching network.

In this utility model embodiment, if f1 is the mid frequency of lower half sideband, f2 is the mid frequency of upper half sideband, There is such approximation relation in f1 and f2：F1=2/3f2.Due to design output matching network, to make lower sideband be operated in continuouss inverse F quasi-mode, makes upper side band be operated in continuouss F quasi-mode, then on this frequency of f1, harmonic power amplifying circuit is operated in The inverse F quasi-mode of standard, and harmonic power amplifying circuit is operated in the F quasi-mode of standard on this frequency of f2.

Continuouss F power-like amplifier and continuouss are combined against F power-like amplifier, by continuouss against F class Power amplifier mode of operation is excessive to continuouss F power-like amplifier mode of operation, has widened single continuouss harmonic wave Control the design space of power-like amplifier, effectively the efficiency of continuouss harmonic controling power-like amplifier is increased to greater than 60%, relative bandwidth is increased to greater than 80%, and simple, the easy realization of harmonic impedance coupling.

The another object of this utility model embodiment is, provides a kind of harmonic power using the high broadband of above-mentioned high efficiency The radio-frequency power amplifier of amplifying circuit.

These are only preferred embodiment of the present utility model, not in order to limit this utility model, all in this practicality Any modification, equivalent and improvement made within new spirit and principle etc., should be included in guarantor of the present utility model Within the scope of shield.

Claims (7)

1. a kind of harmonic power amplifying circuit in the high broadband of high efficiency is it is characterised in that described harmonic power amplifying circuit includes：

Input matching network, transistor, and

Make described harmonic power amplifying circuit lower sideband be operated in continuouss against F class amplification mode, so that described harmonic power is amplified Circuit upper side band is operated in the output matching network of continuouss F class amplification mode；

The input of described input matching network is the input of described harmonic power amplifying circuit, described input matching network Outfan is connected with the grid of described transistor, and the drain electrode of described transistor is connected with the input of described output matching network, The source ground of described transistor, the outfan of described output matching network is the outfan of described harmonic power amplifying circuit；

Described output matching network forms low pass filter with the parasitic network of described transistor.

2. harmonic power amplifying circuit as claimed in claim 1 is it is characterised in that described input matching network is fourth order low-pass Wave filter.

3. harmonic power amplifying circuit as claimed in claim 1 is it is characterised in that described harmonic power amplifying circuit lower sideband Mid frequency with the mid frequency relation of upper half sideband be：

F1=2/3f2, wherein f1 are the mid frequency of lower half sideband, and f2 is the mid frequency of upper half sideband.

4. harmonic power amplifying circuit as claimed in claim 1 is it is characterised in that described transistor is GaN transistor, described The operating frequency of transistor is 0-6GHz, and the output of described transistor is 10W.

5. harmonic power amplifying circuit as claimed in claim 1 is it is characterised in that described output matching network and described crystal The parasitic network of pipe forms third-order low-pass filter, and the input of the parasitic network of described transistor connects the intrinsic leakage of transistor Pole, the outfan of the parasitic network of described transistor connects the input of described output matching network；

The topological structure of described third-order low-pass filter includes：

Inductance L1, inductance L2, inductance L3, electric capacity C1, electric capacity C2, electric capacity C3；

One end of described inductance L1 is the input of described parasitic network, and the other end of described inductance L1 is connect by described electric capacity C1 Ground, the other end of described inductance L1 is also connected with one end of described inductance L2, and the other end of described inductance L2 passes through described electric capacity C2 is grounded, and the other end of described inductance L2 is also connected with one end of described inductance L3, and the other end of described inductance L3 is described posting The outfan of raw network passes through described electric capacity C3 ground connection.

6. harmonic power amplifying circuit as claimed in claim 1 is it is characterised in that described output matching network is star-like transmission Line structure, including：

First transmission line, the second transmission line, the 3rd transmission line, the 4th transmission line, the 5th transmission line, the 6th transmission line, the 7th biography Defeated line, the 8th transmission line, the 9th transmission line, the tenth transmission line；

One end of described first transmission line is the input of described output matching network, and the other end of described first transmission line is simultaneously Be connected with one end of described second transmission line, described 3rd transmission line, described 4th transmission line, described second transmission line another Hold the offset side for described output matching network, the other end of described 4th transmission line is simultaneously connected with described 5th transmission line, institute State the 6th transmission line, one end of described 7th transmission line, the other end of described 7th transmission line is simultaneously connected with described 8th transmission Line, described 9th transmission line, one end of described tenth transmission line, the other end of described tenth transmission line is described output matching net The outfan of network.

7. a kind of radio-frequency power amplifier is it is characterised in that described radio-frequency power amplifier is included as any one of claim 1-6 Described harmonic power amplifying circuit.