CN105897194B - A kind of continuous EF class high efficiency wideband power amplifer and its implementation - Google Patents
A kind of continuous EF class high efficiency wideband power amplifer and its implementation Download PDFInfo
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- CN105897194B CN105897194B CN201610309332.7A CN201610309332A CN105897194B CN 105897194 B CN105897194 B CN 105897194B CN 201610309332 A CN201610309332 A CN 201610309332A CN 105897194 B CN105897194 B CN 105897194B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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Abstract
The present invention provides a kind of continuous EF class high efficiency wideband power amplifer and its implementation, including fundamental wave input matching network, E power-like amplifier, continuous type harmonic controling network and fundamental wave output matching network, wherein, the input terminal of fundamental wave input matching network is connected with power input, the input terminal of output termination E power-like amplifier；The output end of E power-like amplifier is connected with the input terminal of continuous type harmonic controling network, and the output end of continuous type harmonic controling network is connected with the input terminal of fundamental wave output matching network, and the output end of fundamental wave output matching network is as power output.Compared with the existing technology, the present invention is on the basis of furtheing investigate " continuous class thought ", it is proposed novel fundamental wave output matching network and continuous type harmonic controling network, it can greatly inhibit load impedance with the drift of working frequency, expand bandwidth in the case where keeping the efficient situation of power amplifier, the significant increase overall bandwidth of amplifier.
Description
Technical field
The present invention relates to radio-frequency communication technical field more particularly to a kind of continuous EF class high efficiency wideband power amplifer and
Its implementation.
Background technique
Radio-frequency power amplifier is that power consumption is maximum in entire radio frequency system as the final block in entire emission system
Component, its main function is to carry out power amplification to the signal of prime output, and gives amplified signal to antenna
Emitted.It is first when efficiency is Designing power amplifier since power amplifier work can consume very big dc power
The important indicator first to be considered, while output power, the linearity, bandwidth are also the key index of power amplifier.This main body
Present such the following aspects: (1) bandwidth of power amplifier.Since present a variety of communication standards are compatible, respective work
Make that frequency range is again different, the considerations of for cost and volume, it is desirable that a radio-frequency power amplifier can be applied to multiple communication systems
Unite such as GSM, CMDA, LTE, and just to the bandwidth of entire radio-frequency system, more stringent requirements are proposed for this, especially for place
In the power amplifier of entire RF emission system final stage, more stringent requirements are proposed.(2) efficiency of power amplifier.Radio frequency function
Rate amplifier is the afterbody of entire rf transmitter unit, will necessarily consume most energy, so requiring power amplification
The efficiency of device is high as far as possible.China is in the important period for advocating energy environment protection economized at present.In order to guarantee to communicate
Compatibility and operation cost, it is increasing to more broadband, high efficiency power amplifier demand, especially to the promoted
4 third-generation mobile communication technologies, it is desirable that radio-frequency power amplifier has high efficiency performance indicator.While in order to cover movement, telecommunications, connection
The working frequency range of logical three operators also needs performance of the power amplifier with broader bandwidth.Based on the considerations of above-mentioned factor,
Foreign countries first proposed the thought of EF power-like amplifier.Wherein, E class power amplifier by switching transistor and output end capacitor and inductor
It constitutes, by driving by force so that the transistor of power amplifier is worked with switch state, the characteristics of waveform is: when thering is electric current to flow through, electricity
Pressure is zero；When having voltage, flowing through electric current is zero, and the slope of transistor turns transient voltage is zero.The principle of F class is exactly to pass through tune
The impedance of whole higher hamonic wave, the voltage and current for adjusting corresponding harmonic wave make to remold to total voltage current waveform
The overlapping for not occurring voltage and current in the time domain is obtained, higher hamonic wave power consumption is zero on frequency domain.Theoretically it can achieve
100% efficiency.The EF power-like amplifier of the prior art combines the design method of E class and F class, by putting in E class power
Harmonic controling circuit control higher hamonic wave is utilized in big device, and iteration obtains best base carrier load and source back and forth using load balance factor
Impedance only carries out Optimum Matching to centre frequency when it is matched, is based on although efficiency more higher than E class and F class can be obtained
Classical transmission line theory, when operating frequency offset centre frequency, corresponding output impedance can also deviate optimal value, cause to put
The decaying of big device performance, this will can generate strong influence, therefore, prior art EF class power to the efficiency of power amplifier
Amplifier discomfort is fit to do broadband, and can only carry out narrowband design.
Therefore for drawbacks described above present in currently available technology, it is really necessary to be studied, to provide a kind of scheme,
Solve defect existing in the prior art.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of continuous EF class high efficiency wideband power amplifer and its realizations
Method has been expanded " continuous class " thought on the Research foundation of prior art EF power-like amplifier, and has innovatively been proposed
Novel fundamental wave output matching network and continuous harmonic controling network, both structures are based on " continuous class " thought.With solution
The certainly above problem.
In order to overcome the drawbacks of the prior art, the invention adopts the following technical scheme:
A kind of continuous EF class high efficiency wideband power amplifer, including fundamental wave input matching network, E power-like amplifier,
Continuous type harmonic controling network and fundamental wave output matching network, wherein
The input terminal of the fundamental wave input matching network is connected with power input, and output terminates the E class power
The input terminal of amplifier；
The output end of the E power-like amplifier is connected with the input terminal of the continuous type harmonic controling network, described
The output end of continuous type harmonic controling network is connected with the input terminal of the fundamental wave output matching network, the fundamental wave output
The output end of matching network is as power output；
The continuous type harmonic controling network includes the first microstrip line Z1, the second microstrip line Z2, third microstrip line Z3 and the
Four microstrip line Z4, one end of the first microstrip line Z1 are connected with the input terminal of E power-like amplifier, first microstrip line
The other end of Z1 is connected with one end of the second microstrip line Z2, one end of third microstrip line Z3 and one end of the 4th microstrip line Z4
It connects, the other end of the 4th microstrip line Z4 is connected with the fundamental wave output matching network；The second microstrip line Z2's is another
The other end of one end and the third microstrip line Z3 are grounded to form two short-circuit minor matters, draw its even-order harmonic to short dot,
Odd harmonic is drawn to open circuit point；
The fundamental wave output matching network uses Impedance stepping formula topological structure, including the 5th microstrip line Z5, the 6th
One end of microstrip line Z6 and the 7th microstrip line Z7, the 5th microstrip line Z5 and the input terminal of the continuous type harmonic controling network
It is connected, the other end of the 5th microstrip line Z5 is connected with one end of the 6th microstrip line Z6, the 6th microstrip line
The other end of Z6 is connected with one end of the 7th microstrip line Z7, the other end and power output phase of the 7th microstrip line Z7
Connection；Wherein, the impedance of the 5th microstrip line Z5, the 6th microstrip line Z6 and the 7th microstrip line Z7 change in phase step type, make it
Optimum impedance value under fundamental frequency constitutes an optimum impedance line, and then best impedance of fundamental frequency becomes one in whole bandwidth
Smooth continuous curved surface.
Preferably, the parameter of the second microstrip line Z2 and the third microstrip line Z3 are according to the frequency phase of power amplifier
It should adjust.
In order to overcome the drawbacks of the prior art, the present invention also proposes a kind of continuous EF class high efficiency wideband power amplifer
Implementation method, comprising the following steps:
Step 1: the E power-like amplifier of one standard of debugging；
Step 2: in one broadband matching network of output end framework of the E power-like amplifier, the broadband matching network
Topological structure cascaded by various micro-strip line generalizations, adjust various microstrip lines parameter obtain one approach optimum impedance song
The curve in face, thus keeping EF class efficient while widening the bandwidth of operation of power amplifier.
Preferably, the broadband matching network includes continuous type harmonic controling network and fundamental wave output matching network, wherein
The continuous type harmonic controling network includes the first microstrip line Z1, the second microstrip line Z2, third microstrip line Z3 and the 4th microstrip line
One end of Z4, the first microstrip line Z1 are connected with the input terminal of E power-like amplifier, and the first microstrip line Z1's is another
End is connected with one end of the second microstrip line Z2, one end of third microstrip line Z3 and one end of the 4th microstrip line Z4, described
The other end of 4th microstrip line Z4 is connected with the fundamental wave output matching network；The other end of the second microstrip line Z2 and institute
The other end for stating third microstrip line Z3 is grounded to form two short-circuit minor matters, draws its even-order harmonic to short dot, odd harmonic
It draws to open circuit point；
The fundamental wave output matching network uses Impedance stepping formula topological structure, including the 5th microstrip line Z5, the 6th
One end of microstrip line Z6 and the 7th microstrip line Z7, the 5th microstrip line Z5 and the input terminal of the continuous type harmonic controling network
It is connected, the other end of the 5th microstrip line Z5 is connected with one end of the 6th microstrip line Z6, the 6th microstrip line
The other end of Z6 is connected with one end of the 7th microstrip line Z7, the other end and power output phase of the 7th microstrip line Z7
Connection；Wherein, the impedance of the 5th microstrip line Z5, the 6th microstrip line Z6 and the 7th microstrip line Z7 change in phase step type, make it
Optimum impedance value under fundamental frequency constitutes an optimum impedance line, and then best impedance of fundamental frequency becomes one in whole bandwidth
Smooth continuous curved surface.
Compared with the existing technology, continuous EF class high efficiency wideband power amplifer provided by the invention and its implementation,
On the basis of furtheing investigate to " continuous class thought ", novel fundamental wave output matching network and continuous type harmonic controling are proposed
Network can greatly inhibit load impedance with the drift of working frequency, expand bandwidth, pole in the case where keeping the efficient situation of power amplifier
The overall bandwidth of amplifier is improved greatly.
Detailed description of the invention
Fig. 1 is the schematic diagram of electric current face optimum impedance value in " continuous class " thought.
Fig. 2 is the architecture diagram of continuous EF class high efficiency wideband power amplifer of the invention.
Fig. 3 is continuous type harmonic controling network and fundamental wave output in continuous EF class high efficiency wideband power amplifer of the invention
The topology diagram of matching network.
Specific embodiment
Following is a specific embodiment of the present invention in conjunction with the accompanying drawings, technical scheme of the present invention will be further described,
However, the present invention is not limited to these examples.
In view of the defects existing in the prior art, applicant has carried out depth to the structure of EF power-like amplifier in the prior art
The research entered, it is found by the applicant that in the prior art EF power-like amplifier be based on classical transmission line theory to centre frequency into
Row Optimum Matching.It is known that under normal circumstances in order to carry out Simplified analysis, the current waveform of traditional EF power-like amplifier is adopted
Drain current wavefonn formula with half cosine rectified waveform, after Fourier decomposition and normalization are carried out to it are as follows:
Similarly, it controls to the voltage waveform formula after triple-frequency harmonics are as follows:
The each harmonic optimum impedance in electric current face is represented by formula:
Wherein n represents nth harmonic component.Such result requires to correspond to an optimum impedance in each harmonic wave frequency point
Required value, this proposes very high difficulty for broadband design.When operating frequency offset centre frequency, corresponding output resistance
It is anti-also to deviate optimal value, to cause the decaying of amplifier performance, prior art EF power-like amplifier discomfort is made to be fit to do width
Band, and narrowband design can only be carried out.
Based on such situation, applicant carries out in-depth study to " continuous class " thought, and introduces " continuous class " thought pair
The voltage equation that above-mentioned voltage equation obtains after further correcting and normalize are as follows:
Consider modifying factor γ (- 1 < γ < 1) therein, obtains the optimum impedance value under fundamental frequency via previous
A point (γ=0) become a continuous line, diffuse in whole bandwidth, best impedance of fundamental frequency just becomes one and smoothly connects
Continuous curved surface, referring specifically to the schematic diagram for shown in Fig. 1, being electric current face optimum impedance value in " continuous class " thought.As long as therefore setting
The bandwidth of power amplifier can be improved by counting out broadband matching network.As for the design of broadband matching network, topological structure is all
It is to be cascaded by various micro-strip line generalizations, and microstrip line can analyze and be illustrated as parametric form indicates on Smith chart
Out, therefore the impedance curve of its topological structure is substantially the parametric equation being made of multi-parameter, as long as finding out these ginsengs
Number can be obtained by final matching network.By analyzing various microstrip lines in the tendency rule of Smith chart, using slotting
Value, fitting such as return at the mathematical way, so that it may and it obtains one and approaches the curve of optimum impedance curved surface to get solution quantitative out, into
One step can obtain a topological structure blank.
Applicant according to above-mentioned theory, design broadband matching network of the invention include continuous type harmonic controling network and
Fundamental wave output matching network, is all based on " continuous class " thought, their combination can guarantee in bandwidth wide as far as possible
Inhibit the drift of load impedance to achieve the purpose that spread bandwidth.
Referring to fig. 2, the architecture diagram of continuous EF class high efficiency wideband power amplifer of the invention, including fundamental wave input are shown
Matching network, E power-like amplifier, continuous type harmonic controling network and fundamental wave output matching network, wherein fundamental wave input
The input terminal of distribution network is connected with power input, the input terminal of output termination E power-like amplifier；E class power amplification
The output end of device is connected with the input terminal of continuous type harmonic controling network, the output end and fundamental wave of continuous type harmonic controling network
The input terminal of output matching network is connected, the output end of fundamental wave output matching network is as power output.
Referring to Fig. 3, it show continuous type harmonic controling network in continuous EF class high efficiency wideband power amplifer of the invention
With the topology diagram of fundamental wave output matching network, continuous type harmonic controling network includes the first microstrip line Z1, the second microstrip line
One end of Z2, third microstrip line Z3 and the 4th microstrip line Z4, the first microstrip line Z1 are connected with the input terminal of E power-like amplifier
It connects, one end of the other end of the first microstrip line Z1 and the second microstrip line Z2, one end of third microstrip line Z3 and the 4th microstrip line Z4
One end be connected, the other end of the 4th microstrip line Z4 is connected with fundamental wave output matching network；Second microstrip line Z2's is another
The other end of end and third microstrip line Z3 are grounded to form two short-circuit minor matters, draw its even-order harmonic to short dot, odd times are humorous
Wave is drawn to open circuit point；
Fundamental wave output matching network uses Impedance stepping formula topological structure, including the 5th microstrip line Z5, the 6th microstrip line Z6
It is connected with one end of the 7th microstrip line Z7, the 5th microstrip line Z5 with the input terminal of continuous type harmonic controling network, the 5th micro-strip
The other end of line Z5 is connected with one end of the 6th microstrip line Z6, and the one of the other end of the 6th microstrip line Z6 and the 7th microstrip line Z7
End is connected, and the other end of the 7th microstrip line Z7 is connected with power output；Wherein, the 5th microstrip line Z5, the 6th microstrip line Z6
Impedance with the 7th microstrip line Z7 changes in phase step type, and the optimum impedance value under its fundamental frequency is made to constitute an optimum impedance
Line, then best impedance of fundamental frequency becomes a smooth continuous curved surface in whole bandwidth.
Wherein, the impedance Z 2 of the short-circuit minor matters microstrip line of two in harmonic controling network and Z3 are by designed power amplification
Depending on the frequency range of device.
In view of the deficiencies of the prior art, the invention also provides a kind of realities of continuous EF class high efficiency wideband power amplifer
Existing method, specifically comprises the following steps:
Step 1: the E power-like amplifier of one standard of debugging；
Step 2: one novel fundamental wave output matching network of design, using Impedance stepping formula topological structure, topological structure
In three sections of microstrip lines impedance Z 5, Z6, Z7 in phase step type change.The optimum impedance value under its fundamental frequency is set to constitute one most preferably
Impedance line, then best impedance of fundamental frequency just becomes a smooth continuous curved surface in whole bandwidth；
Step 3: according to " continuous class " thought, the continuous harmonic controling network of improved short circuit minor matters in parallel, harmonic wave are introduced
Depending on controlling the frequency range of the impedance Z 2 and Z3 of two short-circuit minor matters microstrip lines in network by designed power amplifier, make it
Even-order harmonic is drawn to short dot, and odd harmonic is drawn to open circuit point；
Step 4: optimizing tuning to integrated circuit, is keeping EF class efficient while widening power amplifier
Bandwidth of operation.
Wherein, the load impedance of the continuous EF class power amplifier is 50 Europe.
The above description of the embodiment is only used to help understand the method for the present invention and its core ideas.It should be pointed out that pair
For those skilled in the art, without departing from the principle of the present invention, the present invention can also be carried out
Some improvements and modifications, these improvements and modifications also fall within the scope of protection of the claims of the present invention.To these embodiments
A variety of modifications are it will be apparent that General Principle defined herein can be for those skilled in the art
It is realized in other embodiments in the case where not departing from the spirit or scope of the present invention.Therefore, the present invention is not intended to be limited to
These embodiments shown in the application, and be to fit to consistent with principle disclosed in the present application and features of novelty widest
Range.
Claims (1)
1. a kind of implementation method of continuous EF class high efficiency wideband power amplifer, which comprises the following steps:
Step 1: the E power-like amplifier of one standard of debugging；
Step 2: in one broadband matching network of output end framework of the E power-like amplifier, the broadband matching network is opened up
It flutters structure to be cascaded by various micro-strip line generalizations, the parameter for adjusting various microstrip lines obtains one and approaches optimum impedance curved surface
Curve, thus keeping EF class efficient while widening the bandwidth of operation of power amplifier；
The broadband matching network includes continuous type harmonic controling network and fundamental wave output matching network, wherein the continuous type
Harmonic controling network include the first microstrip line Z1, the second microstrip line Z2, third microstrip line Z3 and the 4th microstrip line Z4, described first
One end of microstrip line Z1 is connected with the input terminal of E power-like amplifier, the other end of the first microstrip line Z1 and described the
One end of two microstrip line Z2, one end of third microstrip line Z3 are connected with one end of the 4th microstrip line Z4, the 4th microstrip line
The other end of Z4 is connected with the fundamental wave output matching network；The other end of the second microstrip line Z2 and the third micro-strip
The other end of line Z3 is grounded to form two short-circuit minor matters, draws its even-order harmonic to short dot, odd harmonic is drawn to open circuit
Point；
The fundamental wave output matching network uses Impedance stepping formula topological structure, including the 5th microstrip line Z5, the 6th microstrip line Z6
It is connected with one end of the 7th microstrip line Z7, the 5th microstrip line Z5 with the input terminal of the continuous type harmonic controling network,
The other end of the 5th microstrip line Z5 is connected with one end of the 6th microstrip line Z6, and the 6th microstrip line Z6's is another
End is connected with one end of the 7th microstrip line Z7, and the other end of the 7th microstrip line Z7 is connected with power output；Its
In, the impedance of the 5th microstrip line Z5, the 6th microstrip line Z6 and the 7th microstrip line Z7 change in phase step type, make its fundamental frequency
Under optimum impedance value constitute an optimum impedance line, then in whole bandwidth best impedance of fundamental frequency become one it is smooth continuously
Curved surface.
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| CN107453713B (en) * | 2017-07-12 | 2021-01-26 | 杭州电子科技大学 | Power amplifier for improving gate-source parasitic effect |
| CN107425814B (en) * | 2017-08-07 | 2021-01-29 | 杭州电子科技大学 | Broadband Doherty power amplifier based on compensation parasitic capacitance |
| CN107508560B (en) * | 2017-08-11 | 2021-01-26 | 杭州电子科技大学 | Doherty power amplifier for enhancing bandwidth performance and implementation method thereof |
| CN108768321A (en) * | 2018-06-27 | 2018-11-06 | 成都嘉纳海威科技有限责任公司 | A kind of high-efficient E F classes stacking power amplifier based on accurate harmonic controling |
| CN108768315A (en) * | 2018-07-11 | 2018-11-06 | 成都嘉纳海威科技有限责任公司 | A kind of high-efficiency double-frequency F classes stacking power amplifier based on accurate harmonic controling |
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