CN105897194A - Continuous class EF efficient wideband power amplifier and implementation method thereof - Google Patents
Continuous class EF efficient wideband power amplifier and implementation method thereof Download PDFInfo
- Publication number
- CN105897194A CN105897194A CN201610309332.7A CN201610309332A CN105897194A CN 105897194 A CN105897194 A CN 105897194A CN 201610309332 A CN201610309332 A CN 201610309332A CN 105897194 A CN105897194 A CN 105897194A
- Authority
- CN
- China
- Prior art keywords
- microstrip line
- harmonic
- power
- continuous
- network
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 8
- 230000008859 change Effects 0.000 claims description 6
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 238000011160 research Methods 0.000 abstract description 3
- 238000013461 design Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010606 normalization Methods 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- QVWYCTGTGHDWFQ-AWEZNQCLSA-N (2s)-2-[[4-[2-chloroethyl(2-methylsulfonyloxyethyl)amino]benzoyl]amino]pentanedioic acid Chemical compound CS(=O)(=O)OCCN(CCCl)C1=CC=C(C(=O)N[C@@H](CCC(O)=O)C(O)=O)C=C1 QVWYCTGTGHDWFQ-AWEZNQCLSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Abstract
The present invention provides a continuous class EF efficient wideband power amplifier and an implementation method thereof. The continuous class EF efficient wideband power amplifier includes a fundamental wave input matched network, a class E power amplifier, a continuous harmonic control network, and a fundamental wave output matched network. The input end of the fundamental wave input matched network is connected with a power input end, and the output end of the fundamental wave input matched network is connected with the input end of the class E power amplifier. The output end of the class E power amplifier is connected with the input end of the continuous harmonic control network. The output end of the continuous harmonic control network is connected with the input end of the fundamental wave output matched network. The output end of the fundamental wave output matched network is used for power output. Compared with the prior art, on the basis of deep research of a ''continuous concept'', a novel fundamental wave output matched network and a continuous harmonic control network are provided, so that a load impedance can be significantly suppressed from drifting along with work frequency, a bandwidth is increased while high efficiency of the power amplifier is maintained, and the overall bandwidth of the amplifier is increased substantially.
Description
Technical field
The present invention relates to radio-frequency communication technical field, particularly relate to a kind of EF class high efficiency wideband power amplifer and its implementation continuously.
Background technology
Radio-frequency power amplifier, as the final block in whole emission system, is the parts that in whole radio system, power consumption is maximum, and its Main Function is that the signal to prime output carries out power amplification, and the signal after amplifying is given antenna and launched.Owing to power amplifier work can consume the biggest dc power, therefore efficiency first has to the important indicator considered when being Designing power amplifier, and output, the linearity, bandwidth are also the key indexs of power amplifier simultaneously.This is mainly reflected in such the following aspects: the bandwidth of (1) power amplifier.Owing to present multiple communication standard is compatible, each working frequency range is the most different, consideration for cost Yu volume, require that a radio-frequency power amplifier can be applied to multiple communication system such as GSM, CMDA, LTE etc., the bandwidth of whole radio-frequency system is just had higher requirement by this, has higher requirement especially for the power amplifier being in whole RF emission system final stage.(2) efficiency of power amplifier.Radio-frequency power amplifier is the afterbody of whole rf transmitter unit, will necessarily consume most energy, so just requiring that the efficiency of power amplifier is the highest.China is in the important period advocating energy environment protection economized at present.In order to ensure communication compatibility and operation cost, increasing, especially to the 4th third-generation mobile communication technology promoted, it is desirable to radio-frequency power amplifier has high efficiency performance indications to more broadband, high efficiency power amplifier demand.Simultaneously in order to cover movement, telecommunications, the working frequency range of three operators of UNICOM also need to power amplifier and have the performance of broader bandwidth.Consideration based on above-mentioned factor, abroad first proposed the thought of EF power-like amplifier.Wherein, E class power amplifier is made up of the capacitor and inductor of switching transistor and outfan, drives the transistor making power amplifier to work with on off state by strong, and the feature of its waveform is: when having electric current to flow through, and voltage is zero；When having voltage, flowing through electric current is zero, and the slope of transistor turns transient voltage is zero.The principle of F class is through adjusting the impedance of higher hamonic wave, adjusts the voltage and current of corresponding harmonic wave, thus reinvents total voltage current waveform so that occurring without the overlap of voltage x current in time domain, higher hamonic wave power consumption is zero on frequency domain.The efficiency of 100% can be reached in theory.The EF power-like amplifier of prior art combines E class and the method for designing of F class, by utilizing harmonic controling circuit to control higher hamonic wave in E power-like amplifier, and utilize load balance factor iteration back and forth to obtain best base carrier load and source impedance, although ratio E class and the higher efficiency of F class can be obtained, but simply mid frequency is carried out Optimum Matching during its coupling, based on classical transmission line theory, when operating frequency offset mid frequency, corresponding output impedance also can offset optimal value, cause the decay of amplifier performance, this will produce strong influence to the efficiency of power amplifier, therefore, prior art EF power-like amplifier discomfort is fit to do broadband, and arrowband design can only be carried out.
Therefore, for drawbacks described above present in currently available technology, it is necessary to study in fact, to provide a kind of scheme, solves defect present in prior art.
Summary of the invention
In view of this, it is an object of the invention to provide a kind of EF class high efficiency wideband power amplifer and its implementation continuously, the Research foundation of prior art EF power-like amplifier has been expanded " continuous class " thought, and proposing novel first-harmonic output matching network and continuous harmonic controling network innovatively, both structures are based on " continuous class " thought.To solve the problems referred to above.
In order to overcome the defect of prior art, the present invention by the following technical solutions:
A kind of EF class high efficiency wideband power amplifer continuously, including first-harmonic input matching network, E power-like amplifier, continuous harmonic controling network and first-harmonic output matching network, wherein,
The input of described first-harmonic input matching network is connected with power input, and its output terminates the input of described E power-like amplifier；
The outfan of described E power-like amplifier is connected with the input of described continuous harmonic controling network, the outfan of described continuous harmonic controling network is connected with the input of described first-harmonic output matching network,, the outfan of described first-harmonic output matching network exports as power；
Described continuous harmonic controling network includes the first microstrip line Z1, the second microstrip line Z2, the 3rd microstrip line Z3 and the 4th microstrip line Z4, described one end of first microstrip line Z1 is connected with the input of E power-like amplifier, the other end of described first microstrip line Z1 is connected with one end of one end, one end of the 3rd microstrip line Z3 and the 4th microstrip line Z4 of described second microstrip line Z2, and the other end of described 4th microstrip line Z4 is connected with described first-harmonic output matching network；The other end of described second microstrip line Z2 and the other end ground connection of described 3rd microstrip line Z3 form two short-circuit minor matters so that it is even-order harmonic traction to short dot, and odd harmonic is drawn to open circuit point；
Described first-harmonic output matching network uses Impedance stepping formula topological structure, including described 5th microstrip line Z5, the 6th microstrip line Z6 and the 7th microstrip line Z7, one end of described 5th microstrip line Z5 is connected with the input of described continuous harmonic controling network, the other end of described 5th microstrip line Z5 is connected with one end of described 6th microstrip line Z6, the other end of described 6th microstrip line Z6 is connected with one end of described 7th microstrip line Z7, and the other end of described 7th microstrip line Z7 is connected with power output；Wherein, described 5th microstrip line Z5, the impedance of the 6th microstrip line Z6 and the 7th microstrip line Z7 are phase step type change, making the optimum impedance value under its fundamental frequency constitute an optimum impedance line, in whole bandwidth, best base natural impedance becomes a smooth continuous print curved surface then.
Preferably, the parameter of described second microstrip line Z2 and described 3rd microstrip line Z3 regulates accordingly according to the frequency of power amplifier.
In order to overcome the defect of prior art, the present invention also proposes the implementation method of a kind of continuous EF class high efficiency wideband power amplifer, comprises the following steps:
Step 1: the E power-like amplifier of one standard of debugging；
Step 2: at outfan framework one broadband matching network of described E power-like amplifier, the topological structure of described broadband matching network is comprehensively cascaded by various microstrip lines and forms, the parameter regulating various microstrip line obtains a curve approaching optimum impedance curved surface, thus is keeping the high efficiency bandwidth of operation simultaneously widening power amplifier of EF class.
Preferably, described broadband matching network includes continuous harmonic controling network and first-harmonic output matching network, wherein, described continuous harmonic controling network includes the first microstrip line Z1, second microstrip line Z2, 3rd microstrip line Z3 and the 4th microstrip line Z4, described one end of first microstrip line Z1 is connected with the input of E power-like amplifier, the other end of described first microstrip line Z1 and one end of described second microstrip line Z2, one end of 3rd microstrip line Z3 is connected with one end of the 4th microstrip line Z4, the other end of described 4th microstrip line Z4 is connected with described first-harmonic output matching network；The other end of described second microstrip line Z2 and the other end ground connection of described 3rd microstrip line Z3 form two short-circuit minor matters so that it is even-order harmonic traction to short dot, and odd harmonic is drawn to open circuit point；
Described first-harmonic output matching network uses Impedance stepping formula topological structure, including described 5th microstrip line Z5, the 6th microstrip line Z6 and the 7th microstrip line Z7, one end of described 5th microstrip line Z5 is connected with the input of described continuous harmonic controling network, the other end of described 5th microstrip line Z5 is connected with one end of described 6th microstrip line Z6, the other end of described 6th microstrip line Z6 is connected with one end of described 7th microstrip line Z7, and the other end of described 7th microstrip line Z7 is connected with power output；Wherein, described 5th microstrip line Z5, the impedance of the 6th microstrip line Z6 and the 7th microstrip line Z7 are phase step type change, making the optimum impedance value under its fundamental frequency constitute an optimum impedance line, in whole bandwidth, best base natural impedance becomes a smooth continuous print curved surface then.
Relative to prior art, the continuous EF class high efficiency wideband power amplifer of present invention offer and its implementation, on the basis of " continuous class thought " is furtherd investigate, novel first-harmonic output matching network and continuous harmonic controling network are proposed, can greatly suppress load impedance with the drift of operating frequency, bandwidth, the significant increase overall bandwidth of amplifier is expanded in the case of keeping power amplifier high efficiency.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of electric current face optimum impedance value in " continuous class " thought.
Fig. 2 is the Organization Chart of the present invention continuous EF class high efficiency wideband power amplifer.
Fig. 3 is continuous harmonic controling network and the topology diagram of first-harmonic output matching network in the present invention continuous EF class high efficiency wideband power amplifer.
Detailed description of the invention
The following is the specific embodiment of the present invention and combine accompanying drawing, technical scheme is further described, but the present invention is not limited to these embodiments.
The defect existed for prior art, the structure of EF power-like amplifier in prior art is conducted in-depth research by applicant, it is found by the applicant that EF power-like amplifier is, based on classical transmission line theory, mid frequency is carried out Optimum Matching in prior art.It is known that generally in order to carry out Simplified analysis, the current waveform of traditional E F power-like amplifier uses half cosine rectified waveform, it is carried out the drain current wavefonn formula after Fourier decomposition and normalization is:
In like manner, the voltage waveform formula controlled after triple-frequency harmonics is:
The each harmonic optimum impedance in electric current face is represented by formula:
Wherein n represents nth harmonic component.Such result just requires that, at the corresponding optimum impedance required value of each harmonic wave frequency, this proposes the highest difficulty for broadband design.When operating frequency offset mid frequency, corresponding output impedance also can offset optimal value, thus causes the decay of amplifier performance, makes prior art EF power-like amplifier discomfort be fit to do broadband, and can only carry out arrowband design.
Based on this kind of situation, applicant carries out in-depth study to " continuous class " thought, and introduces " continuous class " thought and revise above-mentioned voltage equation further and the voltage equation that obtains after normalization is:
Consider modifying factor γ therein (-1 < γ < 1), obtain the optimum impedance value under fundamental frequency and become a continuous print line by a previous point (γ=0), diffuse in whole bandwidth, best base natural impedance just becomes a smooth continuous print curved surface, referring specifically to shown in Fig. 1, it it is the schematic diagram of electric current face optimum impedance value in " continuous class " thought.As long as therefore designing broadband matching network just can improve the bandwidth of power amplifier.Design as broadband matching network, its topological structure is all comprehensively to be cascaded by various microstrip lines to form, and microstrip line can be analyzed and be illustrated as parametric form and show on Smith chart, therefore the impedance curve essence of its topological structure is a parametric equation being made up of multiparameter, as long as obtaining these parameters to can be obtained by final matching network.By analyzing the various microstrip lines tendency rule at Smith chart, then through mathematical way such as interpolation, matching, recurrence, it is possible to obtain a curve approaching optimum impedance curved surface, i.e. draw quantitative solution, the most just can draw a topological structure blank.
Applicant is according to above-mentioned theory, the broadband matching network designing the present invention includes continuous harmonic controling network and first-harmonic output matching network, being all based on " continuous class " thought, their combination ensure that the drift of suppression load impedance in the widest bandwidth thus reaches the purpose of spread bandwidth.
See Fig. 2, it show the Organization Chart of the present invention continuous EF class high efficiency wideband power amplifer, including first-harmonic input matching network, E power-like amplifier, continuous harmonic controling network and first-harmonic output matching network, wherein, the input of first-harmonic input matching network is connected with power input, the input of its output termination E power-like amplifier；The outfan of E power-like amplifier is connected with the input of continuous harmonic controling network, and the outfan of continuous harmonic controling network is connected with the input of first-harmonic output matching network, the outfan of first-harmonic output matching network exports as power.
See Fig. 3, it show continuous harmonic controling network and the topology diagram of first-harmonic output matching network in the present invention continuous EF class high efficiency wideband power amplifer, continuous harmonic controling network includes the first microstrip line Z1, second microstrip line Z2, 3rd microstrip line Z3 and the 4th microstrip line Z4, one end of first microstrip line Z1 is connected with the input of E power-like amplifier, the other end of the first microstrip line Z1 and one end of the second microstrip line Z2, one end of 3rd microstrip line Z3 is connected with one end of the 4th microstrip line Z4, the other end of the 4th microstrip line Z4 is connected with first-harmonic output matching network；The other end of the second microstrip line Z2 and the other end ground connection of the 3rd microstrip line Z3 form two short-circuit minor matters so that it is even-order harmonic traction to short dot, and odd harmonic is drawn to open circuit point；
First-harmonic output matching network uses Impedance stepping formula topological structure, including the 5th microstrip line Z5, the 6th microstrip line Z6 and the 7th microstrip line Z7, one end of 5th microstrip line Z5 is connected with the input of continuous harmonic controling network, the other end of the 5th microstrip line Z5 and one end of the 6th microstrip line Z6 are connected, the other end of the 6th microstrip line Z6 and one end of the 7th microstrip line Z7 are connected, and the other end of the 7th microstrip line Z7 is connected with power output；Wherein, the 5th microstrip line Z5, the impedance of the 6th microstrip line Z6 and the 7th microstrip line Z7 are phase step type change so that it is the optimum impedance value under fundamental frequency constitutes an optimum impedance line, and in whole bandwidth, best base natural impedance becomes a smooth continuous print curved surface then.
Wherein, depending on the impedance Z 2 and Z3 of the short-circuit minor matters microstrip line of two in harmonic controling network is by the frequency range of designed power amplifier.
For the deficiencies in the prior art, the invention allows for the implementation method of a kind of continuous EF class high efficiency wideband power amplifer, specifically include following steps:
Step one: the E power-like amplifier of one standard of debugging；
Step 2: design a novel first-harmonic output matching network, uses Impedance stepping formula topological structure, the impedance Z 5, Z6 of three sections of microstrip lines in topological structure, and Z7 is phase step type change.Making the optimum impedance value under its fundamental frequency constitute an optimum impedance line, in whole bandwidth, best base natural impedance just becomes a smooth continuous print curved surface then；
Step 3: according to " continuous class " thought, introduce the continuous harmonic controling network of the short circuit improved minor matters in parallel, depending on the impedance Z 2 and Z3 of two short-circuit minor matters microstrip lines in harmonic controling network is by the frequency range of designed power amplifier, the traction of its even-order harmonic is made to draw to open circuit point to short dot, odd harmonic；
Step 4: integrated circuit is optimized tuning, is keeping the high efficiency bandwidth of operation simultaneously widening power amplifier of EF class.
Wherein, the load impedance of described continuous EF class power amplifier is 50 Europe.
The explanation of above example is only intended to help to understand method and the core concept thereof of the present invention.It should be pointed out that, for those skilled in the art, under the premise without departing from the principles of the invention, it is also possible to the present invention is carried out some improvement and modification, these improve and modify in the protection domain also falling into the claims in the present invention.Multiple amendment to these embodiments is apparent from for those skilled in the art, and General Principle defined herein can realize the most in other embodiments.Therefore, the present invention is not intended to be limited to these embodiments shown in the application, and is to fit to the widest scope consistent with principle disclosed in the present application and features of novelty.
Claims (4)
1. a continuous EF class high efficiency wideband power amplifer, it is characterised in that include first-harmonic input
Distribution network, E power-like amplifier, continuous harmonic controling network and first-harmonic output matching network, wherein,
The input of described first-harmonic input matching network is connected with power input, and its output terminates described E
The input of power-like amplifier；
The outfan of described E power-like amplifier is connected with the input of described continuous harmonic controling network
Connect, the outfan of described continuous harmonic controling network and the input phase of described first-harmonic output matching network
Connect, the outfan of described first-harmonic output matching network exports as power；
Described continuous harmonic controling network includes the first microstrip line Z1, the second microstrip line Z2, the 3rd micro-strip
Line Z3 and the 4th microstrip line Z4, one end of described first microstrip line Z1 and the input of E power-like amplifier
End is connected, the other end of described first microstrip line Z1 and one end of described second microstrip line Z2, the 3rd
One end of microstrip line Z3 is connected with one end of the 4th microstrip line Z4, another of described 4th microstrip line Z4
End is connected with described first-harmonic output matching network；The other end and the described 3rd of described second microstrip line Z2
The other end ground connection of microstrip line Z3 forms two short-circuit minor matters so that it is even-order harmonic is drawn to short dot, very
Subharmonic draws to open circuit point；
Described first-harmonic output matching network uses Impedance stepping formula topological structure, including described 5th microstrip line
Z5, the 6th microstrip line Z6 and the 7th microstrip line Z7, one end of described 5th microstrip line Z5 with described continuously
The input of type harmonic controling network is connected, and the other end of described 5th microstrip line Z5 is 6th micro-with described
One end of band wire Z6 is connected, the other end of described 6th microstrip line Z6 and described 7th microstrip line Z7
One end be connected, the output of the other end of described 7th microstrip line Z7 and power is connected；Wherein, described
5th microstrip line Z5, the impedance of the 6th microstrip line Z6 and the 7th microstrip line Z7 are phase step type change so that it is
Optimum impedance value under fundamental frequency constitutes an optimum impedance line, then optimal first-harmonic in whole bandwidth
Impedance becomes a smooth continuous print curved surface.
Continuous EF class high efficiency wideband power amplifer the most according to claim 1, it is characterised in that
The parameter of described second microstrip line Z2 and described 3rd microstrip line Z3 is corresponding according to the frequency of power amplifier
Regulation.
3. the implementation method of a continuous EF class high efficiency wideband power amplifer, it is characterised in that bag
Include following steps:
Step 1: the E power-like amplifier of one standard of debugging；
Step 2: in outfan framework one broadband matching network of described E power-like amplifier, described broadband
The topological structure of matching network is comprehensively cascaded by various microstrip lines and forms, and the parameter regulating various microstrip line obtains
To a curve approaching optimum impedance curved surface, thus the high efficiency power of simultaneously widening of EF class is being kept to put
The bandwidth of operation of big device.
The implementation method of continuous EF class high efficiency wideband power amplifer the most according to claim 3,
It is characterized in that, described broadband matching network includes continuous harmonic controling network and first-harmonic output matching net
Network, wherein, described continuous harmonic controling network include the first microstrip line Z1, the second microstrip line Z2,
Three microstrip line Z3 and the 4th microstrip line Z4, one end of described first microstrip line Z1 and E power-like amplifier
Input be connected, one end of the other end of described first microstrip line Z1 and described second microstrip line Z2,
One end of 3rd microstrip line Z3 is connected with one end of the 4th microstrip line Z4, described 4th microstrip line Z4
The other end be connected with described first-harmonic output matching network；The other end of described second microstrip line Z2 and institute
The other end ground connection stating the 3rd microstrip line Z3 forms two short-circuit minor matters so that it is even-order harmonic traction is to short circuit
Point, odd harmonic is drawn to open circuit point；
Described first-harmonic output matching network uses Impedance stepping formula topological structure, including described 5th microstrip line
Z5, the 6th microstrip line Z6 and the 7th microstrip line Z7, one end of described 5th microstrip line Z5 with described continuously
The input of type harmonic controling network is connected, and the other end of described 5th microstrip line Z5 is 6th micro-with described
One end of band wire Z6 is connected, the other end of described 6th microstrip line Z6 and described 7th microstrip line Z7
One end be connected, the output of the other end of described 7th microstrip line Z7 and power is connected；Wherein, described
5th microstrip line Z5, the impedance of the 6th microstrip line Z6 and the 7th microstrip line Z7 are phase step type change so that it is
Optimum impedance value under fundamental frequency constitutes an optimum impedance line, then optimal first-harmonic in whole bandwidth
Impedance becomes a smooth continuous print curved surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610309332.7A CN105897194B (en) | 2016-05-11 | 2016-05-11 | A kind of continuous EF class high efficiency wideband power amplifer and its implementation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610309332.7A CN105897194B (en) | 2016-05-11 | 2016-05-11 | A kind of continuous EF class high efficiency wideband power amplifer and its implementation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105897194A true CN105897194A (en) | 2016-08-24 |
| CN105897194B CN105897194B (en) | 2019-03-05 |
Family
ID=56703473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610309332.7A Active CN105897194B (en) | 2016-05-11 | 2016-05-11 | A kind of continuous EF class high efficiency wideband power amplifer and its implementation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105897194B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107425814A (en) * | 2017-08-07 | 2017-12-01 | 杭州电子科技大学 | A kind of broadband Doherty power amplifier based on compensation parasitic capacitance |
| CN107453713A (en) * | 2017-07-12 | 2017-12-08 | 杭州电子科技大学 | A kind of power amplifier for improving grid source ghost effect |
| CN107508560A (en) * | 2017-08-11 | 2017-12-22 | 杭州电子科技大学 | A kind of Doherty power amplifier and its implementation for strengthening bandwidth performance |
| CN108736846A (en) * | 2018-07-24 | 2018-11-02 | 成都嘉纳海威科技有限责任公司 | A kind of continuous inverse F classes stacking power amplifier based on wave control technology |
| CN108768315A (en) * | 2018-07-11 | 2018-11-06 | 成都嘉纳海威科技有限责任公司 | A kind of high-efficiency double-frequency F classes stacking power amplifier based on accurate harmonic controling |
| CN108768321A (en) * | 2018-06-27 | 2018-11-06 | 成都嘉纳海威科技有限责任公司 | A kind of high-efficient E F classes stacking power amplifier based on accurate harmonic controling |
| CN107483025B (en) * | 2017-07-12 | 2021-01-26 | 杭州电子科技大学 | class-F power amplifier based on novel harmonic control network |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120286868A1 (en) * | 2011-05-12 | 2012-11-15 | Texas Instruments Incorporated | Class d power amplifier |
| CN104300925A (en) * | 2014-10-24 | 2015-01-21 | 天津大学 | High-efficiency class-F and inverse class-F power amplifier |
| CN104518742A (en) * | 2014-12-10 | 2015-04-15 | 天津大学 | High-efficiency double-frequency band F-type power amplifier |
| CN104953963A (en) * | 2015-06-17 | 2015-09-30 | 深圳市华讯方舟科技有限公司 | High-order F type power amplification circuit and radio frequency power amplifier |
| CN104953961A (en) * | 2015-06-17 | 2015-09-30 | 深圳市华讯方舟微电子科技有限公司 | Double-stage inversing D-class power amplifying circuit and radio frequency power amplifier |
| CN104953960A (en) * | 2015-06-17 | 2015-09-30 | 深圳市华讯方舟微电子科技有限公司 | J type power amplification circuit based on parasitic compensation and radio frequency power amplifier |
| US20160099685A1 (en) * | 2014-10-03 | 2016-04-07 | Masoud Babaie | 60 GHz Wideband Class E/F2 Power Amplifier |
| CN205610591U (en) * | 2016-05-11 | 2016-09-28 | 杭州电子科技大学 | Continuous EF class high efficiency broad band power amplifier |
-
2016
- 2016-05-11 CN CN201610309332.7A patent/CN105897194B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120286868A1 (en) * | 2011-05-12 | 2012-11-15 | Texas Instruments Incorporated | Class d power amplifier |
| US20160099685A1 (en) * | 2014-10-03 | 2016-04-07 | Masoud Babaie | 60 GHz Wideband Class E/F2 Power Amplifier |
| CN104300925A (en) * | 2014-10-24 | 2015-01-21 | 天津大学 | High-efficiency class-F and inverse class-F power amplifier |
| CN104518742A (en) * | 2014-12-10 | 2015-04-15 | 天津大学 | High-efficiency double-frequency band F-type power amplifier |
| CN104953963A (en) * | 2015-06-17 | 2015-09-30 | 深圳市华讯方舟科技有限公司 | High-order F type power amplification circuit and radio frequency power amplifier |
| CN104953961A (en) * | 2015-06-17 | 2015-09-30 | 深圳市华讯方舟微电子科技有限公司 | Double-stage inversing D-class power amplifying circuit and radio frequency power amplifier |
| CN104953960A (en) * | 2015-06-17 | 2015-09-30 | 深圳市华讯方舟微电子科技有限公司 | J type power amplification circuit based on parasitic compensation and radio frequency power amplifier |
| CN205610591U (en) * | 2016-05-11 | 2016-09-28 | 杭州电子科技大学 | Continuous EF class high efficiency broad band power amplifier |
Non-Patent Citations (3)
| Title |
|---|
| MURY THIAN等: "《High-Efficiency Harmonic-Peaking Class-EF Power Amplifiers With Enhanced Maximum Operating Frequency》", 《IEEE TRAANSACTIONS ON MICCROWAVE THEORY AND TECHNIQUES》 * |
| 卢驰: "《应用于多模多频的宽带高效率功率放大器设计》", 《中国优秀硕士学位论文》 * |
| 李祥伟等: "《基于PCB板的阶跃式变阻抗线初步研究》", 《全国信息与电子工程第五届学术年会暨四川省电子学会曙光分会第十六届学术年会论文集》 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107453713A (en) * | 2017-07-12 | 2017-12-08 | 杭州电子科技大学 | A kind of power amplifier for improving grid source ghost effect |
| CN107453713B (en) * | 2017-07-12 | 2021-01-26 | 杭州电子科技大学 | Power amplifier for improving gate-source parasitic effect |
| CN107483025B (en) * | 2017-07-12 | 2021-01-26 | 杭州电子科技大学 | class-F power amplifier based on novel harmonic control network |
| CN107425814A (en) * | 2017-08-07 | 2017-12-01 | 杭州电子科技大学 | A kind of broadband Doherty power amplifier based on compensation parasitic capacitance |
| CN107425814B (en) * | 2017-08-07 | 2021-01-29 | 杭州电子科技大学 | Broadband Doherty power amplifier based on compensation parasitic capacitance |
| CN107508560A (en) * | 2017-08-11 | 2017-12-22 | 杭州电子科技大学 | A kind of Doherty power amplifier and its implementation for strengthening bandwidth performance |
| CN107508560B (en) * | 2017-08-11 | 2021-01-26 | 杭州电子科技大学 | Doherty power amplifier for enhancing bandwidth performance and implementation method thereof |
| CN108768321A (en) * | 2018-06-27 | 2018-11-06 | 成都嘉纳海威科技有限责任公司 | A kind of high-efficient E F classes stacking power amplifier based on accurate harmonic controling |
| CN108768315A (en) * | 2018-07-11 | 2018-11-06 | 成都嘉纳海威科技有限责任公司 | A kind of high-efficiency double-frequency F classes stacking power amplifier based on accurate harmonic controling |
| CN108736846A (en) * | 2018-07-24 | 2018-11-02 | 成都嘉纳海威科技有限责任公司 | A kind of continuous inverse F classes stacking power amplifier based on wave control technology |
| CN108736846B (en) * | 2018-07-24 | 2024-02-27 | 成都嘉纳海威科技有限责任公司 | Continuous inverse F-type stacked power amplifier based on waveform control technology |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105897194B (en) | 2019-03-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105897194A (en) | Continuous class EF efficient wideband power amplifier and implementation method thereof | |
| CN205945655U (en) | Harmonic power amplification circuit and RF power amplifier in high broadband of high efficiency | |
| CN102291092B (en) | Inverse class-F power amplifier | |
| CN108718188A (en) | A kind of Doherty power amplifier with high efficient broadband and its design method | |
| CN110266275A (en) | A kind of broadband Doherty power amplifier of continuous inverse F class and the mixing of J class | |
| CN106208972A (en) | The harmonic power amplifying circuit in a kind of high efficiency height broadband and radio-frequency power amplifier | |
| CN104300925A (en) | High-efficiency class-F and inverse class-F power amplifier | |
| CN106452370A (en) | High-fallback Doherty power amplifier based on asymmetric structure and implementation method of high-fallback Doherty power amplifier | |
| US11552599B2 (en) | Harmonic power amplifying circuit with high efficiency and high bandwidth and radio-frequency power amplifier | |
| CN107483025A (en) | A kind of F power-like amplifiers based on new harmonic control network | |
| CN106411267A (en) | Novel broadband three-path Doherty power amplifier and implementation method thereof | |
| CN109639243B (en) | F-class power amplifier based on coupling loop resonant network | |
| CN106374863B (en) | A kind of Doherty power amplifier and its implementation improving back-off dynamic range | |
| CN214256246U (en) | Novel Doherty power amplifier with rear matching structure | |
| CN106411266B (en) | A kind of Doherty power amplifier and its implementation for expanding bandwidth based on improvement load modulation network | |
| CN107332519A (en) | A kind of broadband Doherty power amplifier and its implementation that combiner is exported based on modified | |
| CN106411275A (en) | Three-path Doherty power amplifier for improving bandwidth based on novel load modulation network and implementation method thereof | |
| CN110011623A (en) | A kind of incorgruous power amplifier of dual band radio frequency | |
| AlMuhaisen et al. | Wide band high-efficiency power amplifier design | |
| CN205610591U (en) | Continuous EF class high efficiency broad band power amplifier | |
| CN106411265A (en) | Asymmetric Doherty power amplifier for broadening bandwidth and implementation method thereof | |
| CN205945658U (en) | High -efficient orderly harmonic mating structure in broadband | |
| CN107911088A (en) | For match circuit between the double-frequency broadband power-amplifier stage of GaN power devices | |
| CN110086439A (en) | It is applicable in the F class out-phase power amplification circuit and RF power combiner of 5G network | |
| Bai et al. | A circuit solving method for output matching network parameters of Doherty power amplifiers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20160824 Assignee: Simone Technology (Shanghai) Co., Ltd Assignor: HANGZHOU DIANZI University Contract record no.: X2020330000033 Denomination of invention: Continuous class EF efficient wideband power amplifier and implementation method thereof Granted publication date: 20190305 License type: Common License Record date: 20200511 |
|
| EE01 | Entry into force of recordation of patent licensing contract |