CN108933569A - A kind of broadband magnet coupled resonant type wireless electric energy transmission E power-like amplifier - Google Patents
A kind of broadband magnet coupled resonant type wireless electric energy transmission E power-like amplifier Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
- H03F1/483—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
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Abstract
The invention discloses a kind of broadband magnet coupled resonant type wireless electric energy to transmit E power-like amplifier, its course of work：Input signal (1), gate pole bias supply (2) is connected to double power tube (4) front ends by electric source filter circuit (3), feed circuit (5) is parallel to double power tube (4) both ends, drain power (6) is connected to double power tube (4) rear ends by electric source filter circuit (7), the reactance compensation circuit (8) with impedance mapping function, output signal (9) are passed through in double power tube (4) outputs.It uses double metal-oxide-semiconductor amplifications, reduces the voltage on each metal-oxide-semiconductor compared to the amplification of traditional single tube, is formed and protected to metal-oxide-semiconductor.Double reactance compensation circuits are improved, the impedance matching network in traditional E class is eliminated.This broadband E class power amplification efficiency is high, and working band is wide, and compared to traditional single-frequency point E class power amplifier, ideal output power and efficiency can be kept in broad frequency band.
Description
Technical field
Since broadband type E power-like amplifier of the present invention is mainly used in the transmission of magnet coupled resonant type wireless electric energy, thus it is main
It is related to electronics and RF application.
Background technique
Magnet coupled resonant type wireless electric energy transmission technology is one of big technology of wireless power transmission three, and current domestic and international
One of hot spot of research of scholar.But the power of wireless power transmission is also little at present, rests on hectowatt grade, far can not also
Meet real-life needs, and improves transimission power and relate generally to following three problems：(1) large-power broadband high-frequency electrical
Impedance matching (3) electric energy transmission stability problem of design (2) transmission system parameters in source, i.e. resonance frequency robustness problem.
There are mainly two types of implementation methods for wireless power transmission high frequency electric source at present, and one is passed through using power electronic devices
Full-bridge inverting or semi-bridge inversion are realized；One is signal power is amplified realization using power amplifier.The former can realize larger function
Rate, but due to being limited by power electronic devices switching frequency, supply frequency is not generally high, and is not easy to adjust frequency.The latter
Relatively high power and frequency may be implemented, using the front signal generating circuit realize frequency modulation it is also very convenient, but equipment cost compared with
It is high.
Power amplification formula high frequency electric source is made of signal generating circuit and power amplification circuit, and signal generating circuit generates institute
The signal of frequency is needed, which is amplified to required power for the signal that signal generating circuit exports by power amplifier.If
By amplifier biasing and conducting situation point, power amplifier can be divided into A class, B class, AB class, C class, D class, E class, F class, S class
Deng.A class, B class, AB class, C class are typically divided into classical power amplifier；D class, E class, F class, S class are typically divided into switching molding
Formula power amplifier.
Wherein, a main thought of Switch power amplifier is to switch not consuming any power, Huo Zhekai in the ideal case
The electric current of pass is zero or the voltage of switch ends is zero, thus V, I product switched is always zero, it means that transistor
There is no any power consumption penalty, can achieve 100% on efficiency theory.In real process, due to the conducting pressure of switching transistor
The influence of the factors such as drop and dead resistance, the efficiency of E power-like amplifier will be lower than 100%, but pass through modification load circuit
Parameter optimizes, the actual efficiency of circuit or very high.Since high frequency electric source belongs to magnet coupled resonant type Transmission system
Front end of emission, to improve total system efficiency of transmission must reduce the loss of each section, and broadband E class power amplifier reduces switch and turns
It changes loss and meets our requirements to improving efficiency.
There are many different topology structures for broadband E power-like amplifier, main difference is that reactance compensation circuit and matching electricity
The type on road, the immediate broadband E power-like amplifier of the present invention, as shown in Figure 7.
Wherein, high frequency choke coil RFC2 provides a constant direct current for drain electrode, and R1, C6 improve the stabilization of power tube
Property, the real number being made of C13, C14, C15 and L1, L2, L3 possesses reactance benefit to plural Chebyshev's low pass impedance translation circuit
It repays, the function of impedance transformation, but the frequency characteristic of reactance compensation is poor, working band is relatively narrow.C7 is a parallel equivalent capacitor,
It is made of switching tube drain-source the two poles of the earth output equivalent capacitor with external ground capacity.Under the action of pumping signal, transistor is in open
Close working condition.When transistor saturation conduction, collector voltage waveform is determined by transistor；When the transistor is turned off, current collection
Pole tension waveform is determined by the transient response of laod network.
Summary of the invention
The broadband E class power amplifier that the present invention designs belongs to nonlinear power amplifier according to whether for Linear Power Amplifier, is put using two-tube
Greatly, voltage when work on each metal-oxide-semiconductor is reduced, metal-oxide-semiconductor is protected.
Technical problem solved by the invention is that the magnet coupled resonant type wireless electric energy for providing a kind of wide working band passes
Defeated E power-like amplifier.
The technical solution for realizing the aim of the invention is as follows：The magnet coupled resonant type wireless electric energy of wide working band transmits E
Power-like amplifier, including input signal, gate pole bias supply, electric source filter circuit, double power tubes, feed circuit, drain electrode supply
Power supply, electric source filter circuit, the reactance compensation circuit with impedance mapping function, output signal, wherein input signal, gate pole
Bias supply is connected to double power tube front ends by electric source filter circuit, and feed circuit is parallel to double power tube both ends, drain power
Double power tube rear ends are connected to by electric source filter circuit, the reactance compensation circuit with impedance mapping function is passed through in double power tube outputs
Output signal afterwards.
Further preferred embodiment, magnet coupled resonant type wireless electric energy in broadband of the present invention transmit electricity in E power-like amplifier
Power filter includes first capacitor C1, the second capacitor C2, third capacitor C3, the 4th capacitor C4 and the 5th capacitor C5, wherein
One capacitor C1, the second capacitor C2, third capacitor C3, the 4th capacitor C4 and the 5th capacitor C5 earth.
Further preferred embodiment, magnet coupled resonant type wireless electric energy in broadband of the present invention transmit institute in E power-like amplifier
Stating double power tubes includes the first power tube Q1 and the second power tube Q2, wherein first switch tube Q1 and second switch Q2 in parallel.
Further preferred embodiment, magnet coupled resonant type wireless electric energy in broadband of the present invention transmit institute in E power-like amplifier
Stating feed circuit includes that 3rd resistor R3 and the 6th capacitor C6, wherein 3rd resistor R3 and the 6th capacitor C6 are connected on the first power
Between pipe Q1 drain electrode and gate pole.
Further preferred embodiment, magnet coupled resonant type wireless electric energy in broadband of the present invention transmit institute in E power-like amplifier
Stating electric source filter circuit includes the 9th capacitor C9, the tenth capacitor C10, the 11st capacitor C11, the 12nd capacitor C12 and the 13rd
Capacitor C13, wherein the 9th capacitor C9, the tenth capacitor C10, the 11st capacitor C11, the 12nd capacitor C12 and the 13rd capacitor C13
Earth.
Further preferred embodiment, magnet coupled resonant type wireless electric energy in broadband of the present invention transmit institute in E power-like amplifier
Stating the reactance compensation circuit with impedance mapping function includes the second inductance L2, third inductance L3, the 4th inductance L4 and the 7th capacitor
C7, the 8th capacitor C8, the 14th capacitor C14, the 15th capacitor C15 composition, wherein the 7th capacitor C7, the 8th capacitor C8 difference are simultaneously
It is coupled to the first power tube Q1 and the second both ends power tube Q2, the 14th capacitor C14, the second inductance L2, third inductance L3 are series at
In laod network, the 4th inductance L4, the 15th capacitor C15 are respectively in the both ends third inductance L3 earth.
Compared with prior art, the present invention its remarkable advantage：
1) using double metal-oxide-semiconductor amplifications, two metal-oxide-semiconductor partial pressures, so that drain-source voltage reduces on each metal-oxide-semiconductor when shutdown,
It plays a protective role to metal-oxide-semiconductor.
2) E class power amplifier topology is simple.Amplified using single tube, is easy to compared to full-bridge/half-bridge circuit drive part is simpler
Control.
3) E class power amplification efficiency is high.Because switch state meets ZVS and ZDS condition, greatly reduce switching tube open and
Loss when shutdown.
4) working band is wide.Compared to traditional single-frequency point E class power amplifier, ideal output power can be kept in broad frequency band
With efficiency.
5) traditional double reactance compensation circuits are improved, makes it have the function of impedance transformation, to eliminate special
Impedance inverter circuit, simplify overall structure.
6) system frequency facilitates adjusting.Compared to full-bridge/half-bridge inversion circuit, it is only necessary to the output of adjustment signal generation circuit
Signal frequency.
Just since broadband E class power amplifier has the advantages that as above, it is applied to magnet coupled resonant type wireless electric energy transmission system
In can not only improve the utilization rate of front end energy and can also solve system because frequency splitting phenomenon is led by adjusting frequency
The problem of causing output power sharply to decline.
Detailed description of the invention
Fig. 1 power amplifier composition block diagram
Fig. 2 power amplifier schematic diagram
The bis- metal-oxide-semiconductor structure voltage waveform diagrams of Fig. 3
(a) in Fig. 4 is reactance compensation circuit diagram, (b) is reactance compensation circuit waveform figure
(a) and (b) is reactance compensation circuits improvement technology schematic diagram in Fig. 5
Fig. 6 power amplifier feedback schematic diagram
Broadband E power-like amplifier of the Fig. 7 closest to the prior art
In figure：1 is input signal, and 2 be gate pole bias supply, and 3 be electric source filter circuit, and 4 pairs of power transistor circuits, 5 be anti-
Current feed circuit, 6 be drain electrode power supply, and 7 be electric source filter circuit, and 8 be the reactance compensation circuit with impedance mapping function, and 9 be defeated
Signal out.
Specific embodiment
As shown in Figure 1, the magnet coupled resonant type wireless electric energy of wide working band transmits E power-like amplifier, including input
Signal, gate pole bias supply, electric source filter circuit, double power tubes, feed circuit, drain power supply, electric source filter circuit, band
The reactance compensation circuit of impedance mapping function, output signal, wherein input signal, gate pole bias supply is by power filter electricity
Road is connected to double power tube front ends, and feed circuit is parallel to double power tube both ends, and drain power is connected to double by electric source filter circuit
Power tube rear end, double power tube output output signals after the reactance compensation circuit with impedance mapping function.
As shown in Fig. 2, electric source filter circuit includes first capacitor C1, the second capacitor C2, third capacitor C3, the 4th capacitor C4
With the 5th capacitor C5, wherein first capacitor C1, the second capacitor C2, third capacitor C3, the 4th capacitor C4 and the 5th capacitor C5 are in parallel
Ground connection.
Double power tubes include the first power tube Q1 and the second power tube Q2, wherein first switch tube Q1 and second switch Q2
It is in parallel.
Feed circuit includes that 3rd resistor R3 and the 6th capacitor C6, wherein 3rd resistor R3 and the 6th capacitor C6 are connected on
Between one power tube Q1 drain electrode and gate pole.
Electric source filter circuit include the 9th capacitor C9, the tenth capacitor C10, the 11st capacitor C11, the 12nd capacitor C12 and
13rd capacitor C13, wherein the 9th capacitor C9, the tenth capacitor C10, the 11st capacitor C11, the 12nd capacitor C12 and the 13rd
Capacitor C13 earth.
Reactance compensation circuit with impedance mapping function includes the second inductance L2, third inductance L3, the 4th inductance L4 and the
Seven capacitor C7, the 8th capacitor C8, the 14th capacitor C14, the 15th capacitor C15 composition, wherein the 7th capacitor C7, the 8th capacitor C8
It is parallel to the first power tube Q1 and the second both ends power tube Q2, the 14th capacitor C14, the second inductance L2, third inductance L3 respectively
It is series in laod network, the 4th inductance L4, the 15th capacitor C15 are respectively in the both ends third inductance L3 earth.
1. broadband E power-like amplifier
Different topology structure that there are many broadband E power-like amplifiers, main difference is that the type of reactance compensation circuit, this
Invention is using using double reactance compensation technique broadband E power-like amplifiers with impedance mapping function, circuit diagram
As shown in Figure 2.
Input signal 1, gate pole bias supply 2 are Vb, and electric source filter circuit 3 is (by C1, C2, C3, C4, C5 earth structure
At), double power transistor circuits 4 (being made of Q1, Q2 parallel connection), feed circuit 5 (is connected on power tube Q1 drain electrode and gate pole by R3 and C6
Between constitute), drain electrode power supply 6 is Vcc, and electric source filter circuit 7 (is made of) C9, C10, C11, C12, C13 earth, band
Impedance mapping function reactance compensation circuit 8 (be made of L2, L3, L4 and C7, C8, C14, C15, C7, C8 be parallel to respectively Q1,
The both ends Q2, C14, L2, L3 are series in laod network, and L4, C15 are respectively in the both ends L3 earth), output signal 9.
Main components：Freescale RF tube MRF6V2150NBR1, high frequency choke coil RFC, reactance compensation circuit capacitance
Inductance, power filtering capacitor, capacitance, gate pole bias supply, drain electrode power supply, feed circuit capacitance resistance, gate pole are inclined
It sets and gate pole steady resistance.
E class power amplifier can generate higher semisinusoidal voltage at its hourglass source electrode both ends at work, in metal-oxide-semiconductor off-phases,
The voltage peak easily causes the damage of metal-oxide-semiconductor close to 4 times of DC power supply voltage.E class in broadband designed by this paper uses
Double metal-oxide-semiconductor Parallel Designs shield to metal-oxide-semiconductor so that each metal-oxide-semiconductor drain-source voltage is original 1/2.Its desired voltage
Waveform is as shown in Figure 3.Wherein Vds1 is the voltage on each metal-oxide-semiconductor, and Vds2 is the total voltage on two metal-oxide-semiconductors.
2. the reactance compensation circuit design with impedance mapping function
The characteristic curve of MRF6V2150NBR1 switching transistor is emulated before carrying out tandem circuit design,
The quiescent point that power loss is smaller and enables to power tube fully on is chosen according to its characteristic curve.
The basic power amplifier designed is in order to exporting maximum power and highest efficiency, it is necessary to obtain basic training
The optimum load impedance on electric discharge road.In order to obtain this impedance value, the present invention uses load balance factor (LoadPull) method.Load
The equal output powers of different loads impedance value are bent traction method is by drawing given input power on Smith circle diagram
Line, so that it is determined that optimum load impedance value.On this basis, in order to realize in broadband type E class power amplifier, in designed frequency band etc.
Several frequency points are chosen in compartment of terrain, acquire its optimum load impedance respectively, and its mean value is taken to be set as targeted loads impedance.
In practice, the value of load is not generally identical with target impedance value, and target impedance value is generally plural number,
It is not pure resistance.Double reactance compensation circuits are designed herein to compensate the reaction component of target impedance, then circuit is carried out
Improvement matches it to the active component of load.The structure and principle of reactance compensation circuit institute such as (a) in Fig. 4 and (b)
Show, by rationally designing parameter, so that the equivalent reactance of parallel connection part and part in series is mutual in wider frequency rate band in circuit
Compensation keeps the constant of whole equivalent reactance.
Load value corresponding to traditional double reactance compensation circuits is 50 ohm, needs to carry out it transformation of structure, makes
It can directly be matched to the resulting desired load resistance value of load balance factor.Here using shown in (a) and (b) in Fig. 5
Equivalent transformation, the two parameters relationship are n=(Za/Zb)+1, Zbt=nZb, Zat=(n2- n) * Zb, ZLt=n2*ZL.Through this change
It is constant to change both rear input impedance, but ZLt can be changed to load balance factor needed for load resistor value.According to above formula, to traditional double
Reactance compensation circuit carries out equivalent transformation twice, and the reactance compensation electricity designed by this paper with impedance mapping function can be obtained
Road.The design eliminates special broadband impedance translation circuit in traditional circuit, so that circuit is further simplified.
3. Feedback Design
For working in the transistor of radio frequency band, stabilization is vital.Stability is also amplifier circuit
The most important condition that must satisfy.It is only stable, it just can guarantee that circuit is no lack of the trend vibrated.In order to enable circuit is steady
Determine COEFFICIENT K>1, generally use following measure：
(1) it is directly grounded in gate pole by capacitor and small resistance.
(2) in gate pole series resistor and capacitor parallel circuit.
(3) in gate pole and gate pole biasing power-up resistance
(4) feed circuit is added
The present invention is to take (3) and (4) two kinds of measures, that is, feed circuit is added, hinders it in gate pole and gate pole biasing power-up,
Wherein the schematic diagram of feed circuit is as shown in Figure 6.
When certain factor causes transistor drain output signal to increase, the amount of negative feedback network feedback is increased with it, should
After feedback quantity and original input signal make the difference, original input signal reduces, and reduces so as to cause drain electrode output quantity.Therefore, negative-feedback net
Network is the loop of a Gain Automatic adjusting, and the final result of adjusting is that the variation of drain electrode output quantity is suppressed.But its disadvantage exists
In this gain flattening technology is to reduce gain and efficiency as cost.It is to reduce and increase that negative-feedback circuit, which is not only added,
Benefit and efficiency are that cost exchanges stability and gain flattening for, and addition resistance is also such on gate pole and gate pole biasing.
In order to enable the circuitry to stable work, there is better performance, it is required for providing good DC power supply.If
In view of there may be ripples for power supply in meter, while the self-excitation of circuit is prevented, improve the efficiency of circuit, devises power supply filter
Wave circuit is mainly completed using capacitor, and the selection of capacitor value is related with circuit power frequency, and being typically chosen all is to use
C=l/f.This value, while several values are respectively taken up and down in this value again.
When certain factor cause power tube drain electrode output signal Xo increase so that into feed circuit signal Xf therewith at
Ratio increases, and due to entering gate signal Xi=Xs-Xf, therefore Xi will reduce in the constant situation of gate pole bias voltage, and due to
Drain output signal Xo=AXi, so Xo will also reduce.Therefore, negative feedback network is the loop of a Gain Automatic adjusting, is adjusted
The final result of section is that the variation of drain electrode output quantity is suppressed.But its shortcoming is that this gain flattening technology is to reduce
Gain and efficiency are cost.It is to exchange stability and gain for as cost to reduce gain and efficiency that negative-feedback circuit, which is not only added,
Planarization, it is also such that resistance, which is added, on gate pole and gate pole biasing.
4. realizing step：
1) broadband E power-like amplifier power tube is chosen, inquiry Datasheet discovery MRF6V2150NBR1 meets us
Requirement of experiment.
2) DC analysis is carried out to the power tube of selection, determines its quiescent point.
3) to power tube progress stability analysis is chosen, the coefficient of stability is greater than 1, that is, thinks stable.
4) design of basic parameter is carried out to broadband E class power amplifier.
5) parameter calculating is carried out to double reactance compensation circuit circuits.
6) double reactance compensation circuits are subjected to Structural Transformation, it is made to have the function of impedance transformation.
7) design of the electric source filter circuit of gate pole bias voltage and power tube drain electrode supply voltage.
8) emulation of stability, output performance (gain, power, efficiency etc.) is carried out to entire circuit.
9) power amplifier is made.
Claims (6)
1. a kind of broadband magnet coupled resonant type wireless electric energy transmits E power-like amplifier, it is characterised in that：Including input signal
(1), gate pole bias supply (2), electric source filter circuit (3), double power tubes (4), feed circuit (5) drain power supply (6),
Electric source filter circuit (7), the reactance compensation circuit (8) with impedance mapping function, output signal (9), wherein input signal (1),
Gate pole bias supply (2) is connected to double power tube (4) front ends by electric source filter circuit (3), and feed circuit (5) is parallel to double power
(4) both ends are managed, drain power (6) is connected to double power tube (4) rear ends, double power tube (4) output warps by electric source filter circuit (7)
Cross output signal (9) afterwards of the reactance compensation circuit (8) with impedance mapping function.
2. magnet coupled resonant type wireless electric energy in broadband according to claim 1 transmits E power-like amplifier, feature exists
In：The electric source filter circuit (3) includes first capacitor C1, the second capacitor C2, third capacitor C3, the electricity of the 4th capacitor C4 and the 5th
Hold C5, wherein first capacitor C1, the second capacitor C2, third capacitor C3, the 4th capacitor C4 and the 5th capacitor C5 earth.
3. magnet coupled resonant type wireless electric energy in broadband according to claim 1 transmits E power-like amplifier, feature exists
In：Double power tubes (4) include the first power tube Q1 and the second power tube Q2, wherein first switch tube Q1 and second switch
Q2 is in parallel.
4. magnet coupled resonant type wireless electric energy in broadband according to claim 3 transmits E power-like amplifier, feature exists
In：The feed circuit (5) includes that 3rd resistor R3 and the 6th capacitor C6, wherein 3rd resistor R3 and the 6th capacitor C6 are connected on
Between first power tube Q1 drain electrode and gate pole.
5. magnet coupled resonant type wireless electric energy in broadband according to claim 1 transmits E power-like amplifier, feature exists
In：The electric source filter circuit (7) includes the 9th capacitor C9, the tenth capacitor C10, the 11st capacitor C11, the 12nd capacitor C12
With the 13rd capacitor C13, wherein the 9th capacitor C9, the tenth capacitor C10, the 11st capacitor C11, the 12nd capacitor C12 and the tenth
Three capacitor C13 earths.
6. magnet coupled resonant type wireless electric energy in broadband according to claim 3 transmits E power-like amplifier, feature exists
In：The reactance compensation circuit (8) with impedance mapping function include the second inductance L2, third inductance L3, the 4th inductance L4 and
7th capacitor C7, the 8th capacitor C8, the 14th capacitor C14, the 15th capacitor C15 composition, wherein the 7th capacitor C7, the 8th capacitor
C8 is parallel to the first power tube Q1 and the second both ends power tube Q2, the 14th capacitor C14, the second inductance L2, third inductance respectively
L3 is series in laod network, and the 4th inductance L4, the 15th capacitor C15 are respectively in the both ends third inductance L3 earth.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110729281A (en) * | 2019-11-11 | 2020-01-24 | 中国电子科技集团公司第五十五研究所 | Broadband high-power GaN pre-matching power tube |
| CN112865716A (en) * | 2020-12-31 | 2021-05-28 | 四川天巡半导体科技有限责任公司 | Broadband high-efficiency power device based on multi-step branch matching network |
| CN114123994A (en) * | 2021-11-30 | 2022-03-01 | 东南大学 | Active multi-reactance compensation output topological structure based on switch E-type mode power amplifier |
| CN117118363A (en) * | 2023-10-24 | 2023-11-24 | 中科海高(成都)电子技术有限公司 | Active frequency doubling circuit with high harmonic suppression |
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Application publication date: 20181204 |