CN108988792A - A kind of amplifier circuit - Google Patents
A kind of amplifier circuit Download PDFInfo
- Publication number
- CN108988792A CN108988792A CN201710408875.9A CN201710408875A CN108988792A CN 108988792 A CN108988792 A CN 108988792A CN 201710408875 A CN201710408875 A CN 201710408875A CN 108988792 A CN108988792 A CN 108988792A
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 36
- 239000003990 capacitor Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000001737 promoting effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Abstract
The present invention provides a kind of amplifier circuits, the amplifier circuit includes harmonic controling circuit, harmonic controling circuit is at the tube core of amplifier transistor, the harmonic energy of amplifier transistor is subjected to short circuit, reduce the second-harmonic power output of gallium nitride power tube, the efficiency and power for promoting power amplifier, reduce the generation of harmonic energy in existing amplifier circuit.
Description
Technical field
The present invention relates to amplifier region more particularly to a kind of amplifier circuits.
Background technique
GaN (Gallium Nitride, gallium nitride) HEMT (High Electron Mobility Transistors, it is high
Electron mobility transistor) be representative power device of new generation beginnings in nearest 2 years commercialization, and 4G system apply in
Great competitiveness.
In practical applications, gallium nitride transistor is due to its high cutoff frequency characteristic, so that transistor can be applied to
In higher working frequency, while also producing new problem, i.e., gallium nitride transistor two, triple-frequency harmonics energy it is higher, it is humorous
The fundamental wave performance for having an impact device of wave energy, so reduction that must be more as far as possible from the design of device or circuit is humorous
The generation of wave energy.
Summary of the invention
The embodiment of the invention provides a kind of amplifier circuits, to reduce the production of harmonic energy in existing amplifier circuit
It is raw.
To solve the above-mentioned problems, the present invention provides a kind of amplifier circuits, comprising: amplifier transistor and amplification
The input matching circuit of the grid connection of device transistor, the output matching circuit with the drain electrode connection of amplifier transistor；Input
Match circuit is used for the source impedance of adapter amplifier transistor, and output matching circuit includes harmonic controling circuit and fundamental wave matching electricity
Road, harmonic controling circuit are used at the tube core of amplifier transistor, and the harmonic energy of amplifier transistor is carried out short circuit, base
Wave match circuit is used for the fundamental wave optimum load impedance of adapter amplifier transistor.
The embodiment of the present invention the utility model has the advantages that
The embodiment of the invention provides a kind of amplifier circuit, which includes harmonic controling circuit, harmonic wave control
Circuit processed carries out short circuit at the tube core of amplifier transistor, by the harmonic energy of amplifier transistor, reduces gallium nitride function
The second-harmonic power output for putting pipe, promotes the efficiency and power of power amplifier, reduces harmonic energy in existing amplifier circuit
It generates.
Detailed description of the invention
Fig. 1 is the structural schematic diagram for the amplifier circuit that first embodiment of the invention provides；
Fig. 2 is the circuit diagram for the amplifier circuit that second embodiment of the invention provides；
Fig. 3 is the first circuit diagram for the output matching circuit that second embodiment of the invention provides；
Fig. 4 is second of circuit diagram of the output matching circuit that second embodiment of the invention provides；
Fig. 5 is the third circuit diagram for the output matching circuit that second embodiment of the invention provides；
Fig. 6 is the circuit diagram for the existing output matching circuit that second embodiment of the invention is related to；
Fig. 7 is the efficiency curve diagram for the existing output matching circuit that second embodiment of the invention is related to；
Fig. 8 is the efficiency curve diagram for the first output matching circuit that second embodiment of the invention is related to.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiment is a part of the embodiment in the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Amplifier circuit of the present invention can be used for the main amplifier and peak amplifier of Doherty power amplifier framework,
It can be used for multichannel Doherty circuit framework.
Further annotation explanation now is made to the present invention by way of specific embodiment combination attached drawing.
First embodiment:
Fig. 1 is the structural schematic diagram for the amplifier circuit that first embodiment of the invention provides, as shown in Figure 1, the present embodiment
The amplifier circuit 1 of offer, comprising: amplifier transistor 11, the input matching circuit being connect with the grid of amplifier transistor
12, the output matching circuit 13 connected with the drain electrode of amplifier transistor；Input matching circuit 12 is used for adapter amplifier crystal
The source impedance of pipe 11, output matching circuit 13 include harmonic controling circuit 131 and fundamental wave match circuit 132, harmonic controling circuit
131 for carrying out short circuit, fundamental wave match circuit for the harmonic energy of amplifier transistor at the tube core of amplifier transistor
132 are used for the fundamental wave optimum load impedance of adapter amplifier transistor.
In some embodiments, the input matching circuit 12 in above-described embodiment is used for the source impedance of amplifier transistor
It is matched to system impedance.
In some embodiments, the fundamental wave match circuit 132 in above-described embodiment is used for the fundamental wave of amplifier transistor
Optimum load impedance is matched to system impedance.
In some embodiments, the input matching circuit 12 in above-described embodiment further includes gate bias circuit, fundamental wave
It further include drain electrode biasing circuit with circuit 132.
In some embodiments, the harmonic controling circuit 131 in above-described embodiment is used for the tube core in amplifier transistor
The second harmonic energy of amplifier transistor is carried out short circuit by place.
In some embodiments, the amplifier transistor 11 in above-described embodiment includes gallium nitride power tube.
As shown in Figures 3 to 5, in some embodiments, the harmonic controling circuit 131 in above-described embodiment include eight/
The output pin root of gallium nitride power tube is arranged in one wavelength open line, 1/8th wavelength open lines.
As shown in figure 3, in some embodiments, 1/8th wavelength open lines in above-described embodiment include one first
Corresponding 1/8th wavelength opens line of wavelength, first wave length are the corresponding wavelength of gallium nitride power tube centre frequency.
As shown in figure 4, in some embodiments, 1/8th wavelength open lines in above-described embodiment include one second
Corresponding 1/8th wavelength opens line of wavelength and corresponding 1/8th wavelength opens line of a third wavelength, second wave length are
The corresponding wavelength of gallium nitride power tube working frequency range low frequency point, third wavelength are corresponding for gallium nitride power tube working frequency range high frequency points
Wavelength.
As shown in figure 5, in some embodiments, the harmonic controling circuit 131 in above-described embodiment includes shunt capacitance, electricity
The output pin root of gallium nitride power tube, other end ground connection is arranged in one end of appearance.In practical applications, the capacitive reactance of capacitor with
/ 8th wavelength open lines are equivalent, and design parameter is determined by emulation.
Further annotation explanation is done to the present invention now in conjunction with concrete application scene.
Second embodiment:
With LDMOS (Laterally Diffused Metal Oxide Semiconductor, the oxidation of horizontal proliferation metal
Object semiconductor) it is compared with more traditional technologies such as GaAs (GaAs), gallium nitride transistor can provide preferable linear power
And efficiency and higher bandwidth.Wide bandgap semiconductor characteristic, the high saturated electrons that the promotion of these performances is originated from gallium nitride are moved
Shifting rate and high breakdown fields.Wide-band gap material is also equipped with very high heat-conductive characteristic, can make the electronics device based on gallium nitride
Part can work below the temperature more much higher than other such as silicon or GaAs device.
Gallium nitride transistor is due to its high cutoff frequency characteristic, so that transistor can be applied to higher working frequency
On, while also producing new problem, i.e., gallium nitride transistor two, triple-frequency harmonics energy it is higher, the generation shadow of harmonic energy
The fundamental wave performance for arriving device is rung, so the generation of reduction harmonic energy that must be more as far as possible from the design of device or circuit.
Harmonic component has a great impact to output power and efficiency, therefore, in circuit design, it is necessary to which emphasis is examined
Consider.It is by the control to output harmonic wave component, to obtain optimum waveform raising efficiency that harmonic wave, which debugs class power amplifier,.F class power amplifier is just
It is fundamental wave and harmonic load impedance with short-circuit terminal impedance and open circuit peak value come control device collector (or drain electrode) voltage and current
Waveform usually only controls secondary and triple-frequency harmonics to obtain maximum efficiency, the second harmonic short circuit in tube core interface, and three
Subharmonic open circuit.In fact, control more high order harmonic wave to performance bring improvement be it is very limited, relative to system complex
For the increase of degree and circuit loss usually can with or slightly disregard.Moreover, control higher order harmonics also becomes when frequency increases
It is more difficult, usually only control fundamental wave, secondary and triple-frequency harmonics.
But it is limited to power amplifier performance boost for the control of gallium nitride power tube triple-frequency harmonics, and will increase circuit design
Complexity.Traditional second harmonic fault control method is 1/4 wavelength short circuit minor matters, while also as the function of supply arm, but
1/4 wavelength is longer when low frequency, and power supply arm lengths can all shorten, and affects the efficiency of second harmonic tuning.If supply arm bypasses
Capacitance positions are improper, and second harmonic impedance phase is caused to fall in the position of low efficiency, can seriously affect power amplification efficiency.
Based on above-mentioned analysis, gallium nitride transistor is due to its high cutoff frequency characteristic, so that transistor can be applied to
In higher working frequency, while also producing new problem, i.e., gallium nitride transistor two, triple-frequency harmonics energy it is higher, it is humorous
The fundamental wave performance for having an impact device of wave energy, so reduction that must be more as far as possible from the design of device or circuit is humorous
The generation of wave energy, therefore, the present embodiment provides a kind of efficient gallium nitride RF power amplifier circuits, minimize electricity
Overlapping, promotion power amplifier drain efficiency between current voltage in the time domain.
As shown in Fig. 2, gallium nitride RF power amplifier circuit provided in this embodiment include gallium nitride transistor 21, it is defeated
Enter match circuit 22, harmonic controling circuit 23 and fundamental wave match circuit 24, harmonic controling circuit 23 and fundamental wave match circuit 24 belong to
In output matching circuit 25, wherein
Input matching circuit 22 is used to the source impedance of gallium nitride power tube be matched to system impedance, and such as 50 ohm, simultaneously
Include gate bias circuit；
Harmonic controling circuit 23 is used at the tube core of gallium nitride transistor 21, so that second harmonic impedance is in short-circuit shape
State reduces overlapping in the time domain waveform of output voltage and electric current, promotes the power and efficiency of power amplifier；
Fundamental wave match circuit 24 is used to fundamental wave optimum load impedance be matched to system impedance, such as 50 ohm, keeps power amplifier defeated
Maximum power out, while including drain electrode biasing circuit 26.
In practical applications, harmonic controling circuit 23 be 1/8 wavelength open line, and then power tube export root so that
Second harmonic is short-circuit condition at tube core.
As shown in figure 3, harmonic controling circuit can be to place 0/8 open-circuit line of λ, λ 0 is corresponding for power amplifier centre frequency f0
Wavelength.
In the case that arrangement space is agreed, 2/8 two open-circuit lines of λ 1/8 and λ can be placed, λ 1 and λ 2 are respectively power amplifier work
Make the corresponding wavelength of height frequency point of frequency range:
As shown in figure 4,2/8 two open-circuit lines of λ 1/8 and λ are arranged in two sides, in practical applications, upper and lower position is unlimited,
It can be the other side that drain electrode biasing circuit is arranged in 1/8 open-circuit line of λ, the same of drain electrode biasing circuit is arranged in 2/8 open-circuit line of λ
Side is also possible to the same side that drain electrode biasing circuit is arranged in 1/8 open-circuit line of λ, and the setting of 2/8 open-circuit line of λ is in drain electrode biased electrical
The other side on road.
As shown in figure 5, harmonic controling circuit is also possible to a capacitor, the capacitive reactance of the capacitor and 1/8 wavelength open line etc.
With, and then being placed on power tube output root.
In order to protrude the beneficial effect of the present embodiment, emulated using the CGHV22100 power amplifier tube model of Cree company,
The working frequency range of power amplifier is 1805MHz~1880MHz, and Loadpull emulates to obtain the source impedance of gallium nitride power tube and load resistance
It is anti-, input matching capacitance is designed according to source impedance, harmonic controling circuit is (long using root parallel connection 1.5mm (width)/12.1mm
Degree) open-circuit line, 12.1mm is 0/8 open-circuit line wire length of λ, and λ 0 is the wavelength of the centre frequency 1842.5MHz in power amplifier work belt.So
Fundamental wave match circuit is designed according to load impedance afterwards, is gone out in terms of power tube output interface as the load impedance of fundamental wave.
In the prior art, amplifier circuit carries out second harmonic control using 0/4 wavelength short-circuit line supply arm of λ, and Fig. 6 is
Traditional output matching circuit schematic diagram.
Compare the performance indicator of the present embodiment and the emulation of existing gallium nitride power amplifier, as shown in table 1 below:
Table 1
As shown in Table 1, two kinds of amplifying circuits power P 3dB and efficiency eta@P3dB in peak power output state is suitable, but
Power of the invention high 0.4dB when maximum output efficient state, high-efficient 7 percentage points.
Fig. 7 and 8 is the schematic diagram of the power amplification efficiency of two kinds of output matching circuits emulation, while comparing two kinds of circuits from power amplifier
The second harmonic impedance that pipe output interface is seen away, the second harmonic impedance of existing gallium nitride power amplifier are 5.224+j*
19.486, and the second harmonic impedance of the present embodiment is 0.593+j*6.28, the second harmonic impedance short circuit shape with Loadpull
State is more close.
That is, can reduce output voltage and electric current using gallium nitride RF power amplifier circuit provided in this embodiment
Time domain waveform it is overlapping, reduce the second-harmonic power output of gallium nitride power tube, promote the efficiency and power of power amplifier；Using
Gallium nitride RF power amplifier circuit provided in this embodiment reduces the imaginary part of second harmonic impedance, second harmonic is avoided to hinder
Anti- phase falls in efficiency low valley point；Using gallium nitride RF power amplifier circuit provided in this embodiment, harmonic wave can be reduced
The cloth plate suqare of control circuit, is conducive to the Miniaturization Design of power amplifier.
In summary, implementation through the embodiment of the present invention, at least exist it is following the utility model has the advantages that
The embodiment of the invention provides a kind of amplifier circuit, which includes harmonic controling circuit, harmonic wave control
Circuit processed carries out short circuit at the tube core of amplifier transistor, by the harmonic energy of amplifier transistor, reduces gallium nitride function
The second-harmonic power output for putting pipe, promotes the efficiency and power of power amplifier, reduces harmonic energy in existing amplifier circuit
It generates.
The above is only a specific embodiment of the invention, not do limitation in any form to the present invention, all
Any simple modification, equivalent variations, combination or the modification that embodiment of above is made according to the technical essence of the invention, still
Belong to the protection scope of technical solution of the present invention.
Claims (10)
1. a kind of amplifier circuit, comprising: amplifier transistor, the input being connect with the grid of amplifier transistor matching
Circuit, the output matching circuit with the drain electrode connection of the amplifier transistor；The input matching circuit is described for matching
The source impedance of amplifier transistor, the output matching circuit include harmonic controling circuit and fundamental wave match circuit, the harmonic wave
Control circuit is used at the tube core of the amplifier transistor, and the harmonic energy of the amplifier transistor is carried out short circuit,
The fundamental wave match circuit is used to match the fundamental wave optimum load impedance of the amplifier transistor.
2. amplifier circuit as described in claim 1, which is characterized in that the input matching circuit is used for the amplifier
The source impedance of transistor is matched to system impedance.
3. amplifier circuit as described in claim 1, which is characterized in that the fundamental wave match circuit is used for the amplifier
The fundamental wave optimum load impedance of transistor is matched to system impedance.
4. amplifier circuit as described in claim 1, which is characterized in that the input matching circuit further includes gate bias electricity
Road, the fundamental wave match circuit further include drain electrode biasing circuit.
5. amplifier circuit as described in claim 1, which is characterized in that the harmonic controling circuit is used in the amplifier
At the tube core of transistor, the second harmonic energy of the amplifier transistor is subjected to short circuit.
6. such as amplifier circuit described in any one of claim 1 to 5, which is characterized in that the amplifier transistor includes nitrogen
Change gallium power tube.
7. amplifier circuit as claimed in claim 6, which is characterized in that the harmonic controling circuit includes 1/8th wavelength
The output pin root of the gallium nitride power tube is arranged in open-circuit line, 1/8th wavelength opens line.
8. amplifier circuit as claimed in claim 7, which is characterized in that 1/8th wavelength opens line includes one article the
Corresponding 1/8th wavelength opens line of one wavelength, the first wave length are the corresponding wave of the gallium nitride power tube centre frequency
It is long.
9. amplifier circuit as claimed in claim 7, which is characterized in that 1/8th wavelength opens line includes one article the
Corresponding 1/8th wavelength opens line of two wavelength and corresponding 1/8th wavelength opens line of a third wavelength, described second
Wavelength is the corresponding wavelength of the gallium nitride power tube working frequency range low frequency point, and the third wavelength is the gallium nitride power tube
The corresponding wavelength of working frequency range high frequency points.
10. amplifier circuit as claimed in claim 6, which is characterized in that the harmonic controling circuit includes shunt capacitance, institute
The output pin root of the gallium nitride power tube, other end ground connection is arranged in the one end for stating capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710408875.9A CN108988792A (en) | 2017-06-02 | 2017-06-02 | A kind of amplifier circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710408875.9A CN108988792A (en) | 2017-06-02 | 2017-06-02 | A kind of amplifier circuit |
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| CN108988792A true CN108988792A (en) | 2018-12-11 |
Family
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| CN201710408875.9A Pending CN108988792A (en) | 2017-06-02 | 2017-06-02 | A kind of amplifier circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116545395A (en) * | 2023-07-06 | 2023-08-04 | 南方科技大学 | Harmonic tuning output matching network, design method thereof and power amplifier chip |
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2017
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116545395A (en) * | 2023-07-06 | 2023-08-04 | 南方科技大学 | Harmonic tuning output matching network, design method thereof and power amplifier chip |
| CN116545395B (en) * | 2023-07-06 | 2024-04-05 | 南方科技大学 | Harmonic tuning output matching network, design method thereof and power amplifier chip |
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Application publication date: 20181211 |