CN109546977B - Dual-band efficient inverse F-type power amplifier - Google Patents
Dual-band efficient inverse F-type power amplifier Download PDFInfo
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- CN109546977B CN109546977B CN201811212874.8A CN201811212874A CN109546977B CN 109546977 B CN109546977 B CN 109546977B CN 201811212874 A CN201811212874 A CN 201811212874A CN 109546977 B CN109546977 B CN 109546977B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention relates to the technical field of power amplifiers, in particular to a dual-band efficient inverse F-type power amplifier, wherein a dual-band input matching circuit provides a function of matching optimal source impedance of a transistor with 50Ω, the dual-band input matching circuit is respectively connected with an RC (resistor-capacitor) stabilizing circuit and a dual-band grid direct current bias circuit, the dual-band grid direct current bias circuit provides conditions of fundamental wave open circuit and direct current short circuit at two working frequency bands F1 and F2, and the RC stabilizing circuit is connected with the input end of the transistor; the novel harmonic control circuit is connected with the output end of the transistor, and the output end of the novel harmonic control circuit is respectively connected with the dual-band drain DC bias circuit and the dual-band output matching circuit. The amplifier can meet the feasibility of a dual-band drain bias circuit and effectively simplify the complexity of the circuit structure.
Description
Technical Field
The invention relates to the technical field of power amplifiers, in particular to a dual-band efficient inverse F-type power amplifier.
Background
With further development of wireless communication systems, all components of a radio frequency transmitter need to have the ability to process signals in multiple modes and multiple frequency bands simultaneously. The power amplifier is also required to have the capability to operate in multimode and multiband as the most critical and power-hungry module in a radio frequency transmitter. Therefore, the design of the high-efficiency multi-band power amplifier has become a hotspot in the research field of power amplification, and the high-efficiency dual-band power amplifier is the most basic type.
The inverse F-type power amplifier is used as one of the high-efficiency power amplifiers, the working state of the inverse F-type power amplifier is opposite to that of the F-type power amplifier, and a harmonic control circuit of the inverse F-type power amplifier needs to adjust even harmonic waves of signals to an open circuit state so that current waveforms at the drain end of the transistor are square waves; the odd harmonic wave is regulated to be in a short circuit state, so that the voltage waveform of the drain electrode terminal of the transistor is half sine wave; in an ideal case, the drain voltage and current waveforms do not overlap, so the drain efficiency of an ideal reverse class F power amplifier can reach 100%. The document ' analysis and experiment of high-efficiency F-class and inverse F-class power amplifiers ' in IEEE microwave theory and technology transaction ' shows that: in the case where the output power levels of the class F and inverse class F amplifiers are the same, the efficiency of the inverse class F amplifier is higher than that of the class F amplifier as the on-resistance of the transistor increases. The design of the inverse class F power amplifier may be combined with the high efficiency requirements of the dual band power amplifier. When the inverse F-type power amplifier is actually designed, only the second harmonic and the third harmonic are generally considered.
However, currently existing dual band reverse class F power amplifiers do not achieve excellent Power Added Efficiency (PAE) performance. Mainly due to the following reasons: firstly, the existing double-frequency-band inverse F-type power amplifier circuit has a complex structure, can not well control the second harmonic and the third harmonic of two working frequency bands at the same time, and the harmonic control circuit has limitation on the selection of the working frequency bands of the power amplifier; second, the states of the second harmonic open circuit and the third harmonic short circuit at the intrinsic drain terminal of the transistor are also affected by parasitic parameters of the transistor itself, thereby affecting the efficiency of the dual-band inverted-F power amplifier.
Disclosure of Invention
The invention aims to solve the problems and provides a dual-band efficient reverse F-type power amplifier structure.
The invention adopts the following technical scheme to realize the aim: a dual-band efficient inverse F-type power amplifier is characterized in that: the dual-band output matching circuit comprises a transistor, a dual-band input matching circuit, an RC stabilizing circuit, a dual-band grid DC bias circuit, a novel harmonic control circuit, a dual-band drain DC bias circuit with a harmonic control function and a dual-band output matching circuit; the dual-band input matching circuit provides the function of matching the optimal source impedance of the transistor with 50Ω, the dual-band input matching circuit is respectively connected with the RC stabilizing circuit and the dual-band grid direct current bias circuit, the dual-band grid direct current bias circuit provides the conditions of fundamental wave open circuit and direct current short circuit at the two working frequency bands f1 and f2, and the RC stabilizing circuit is connected with the input end of the transistor; the novel harmonic control circuit is connected with the output end of the transistor, and the output end of the novel harmonic control circuit is respectively connected with the dual-band drain DC bias circuit and the dual-band output matching circuit.
Preferably, the novel harmonic control circuit is composed of a transmission line T9, a transmission line T11 and a transmission line T13 which are connected in series, and an open-ended transmission line T10 and a transmission line T12 which are connected in parallel, wherein the transmission line T10 is connected between the transmission line T9 and the transmission line T11 in parallel, and the transmission line T12 is connected to the transmission line T11.
Preferably, the dual-band drain DC bias circuit with harmonic control provides conditions of fundamental open circuit and DC short circuit at two operating frequency bands, and provides high frequency band f at the point B at the junction of the main power amplifier circuit 2 Short-circuited state of the second and third harmonics of (c).
Preferably, the dual-band output matching circuit is capable of generating a signal at a fundamental frequency f 1 And f 2 The optimum fundamental load impedance of the transistor is matched to 50Ω.
The invention has the beneficial effects that (1) a novel harmonic control circuit is provided, the circuit structure is simplified, and meanwhile, the inverse F-type impedance condition at the intrinsic drain terminal of the transistor is satisfied at the second harmonic and the third harmonic of two working frequency bands; (2) The feasibility of the dual-band drain bias circuit is met, and meanwhile, the complexity of the circuit structure is effectively simplified; (3) The influence of parasitic parameters of the transistor on the performance of the power amplifier is considered. Thereby effectively improving the working efficiency of the dual-band reverse F-type power amplifier.
Drawings
FIG. 1 is a functional block diagram of the present invention;
FIG. 2 is a circuit block diagram of the present invention;
fig. 3 is a circuit diagram of a novel harmonic control proposed by the present invention.
Detailed Description
The following detailed description of the invention refers to the accompanying drawings and preferred embodiments.
The invention provides a dual-band efficient inverse F-type power amplifier, the schematic block diagram of which is shown in figure 1, wherein the input end of a transistor consists of an RC stabilizing circuit, a dual-band grid DC bias circuit and a dual-band input matching circuit; the output end of the transistor is composed of a novel harmonic control circuit, a double-frequency-band drain DC bias circuit with a harmonic control function and a double-frequency-band output matching circuit.
FIG. 2 shows a low-band fundamental wave f 1 High-frequency band fundamental wave f 2 A circuit structure diagram of the dual-band high-efficiency inverse class F power amplifier. The double-frequency-band input matching circuit and the double-frequency-band output matching circuit are composed of three transmission lines connected in series and one parallel open-circuit transmission line, and the optimal fundamental wave impedance of the transistor is matched to 50Ω at two working frequency bands; resistor R connected with grid bias line by RC stabilizing circuit 1 The power amplifier is used for guaranteeing the stability of the power amplifier.
The double-band drain DC bias circuit with harmonic control function adopts the design method of literature 'load tuning parallel three-frequency power amplifier using multiband bias network architecture', and consists of a section of main transmission line T 14 Two parallel sector transmission lines T 17 、T 18 And two parallel open-circuit transmission lines T 15 、T 16 Constructing; the circuit is operated in two operating frequency bands f 1 And f 2 Providing conditions of fundamental open circuit and direct current short circuit, and providing high frequency band f at the point B of the main link connection of the power amplifier 2 Short-circuited state of the second and third harmonics of (c).
Fig. 3 is a schematic diagram of a novel harmonic control circuit according to the present invention. C (C) ds L is parasitic capacitance between drain and source of transistor d C is parasitic inductance p To encapsulate parasitic capacitance. The circuit can meet two operating frequency bands f 1 And f 2 The inverse F type power amplifier is arranged on the second harmonic and third harmonic impedance condition of the intrinsic drain terminal of the transistor. The specific working mode is as follows:
(1) Parallel open-circuit transmission line T 10 Is at the second harmonic 2f of the low frequency band 1 Lower 90 DEG, at point C2 f 1 Short-circuit state of (2); by adjusting the transmission line T 9 Is combined with transistor parasiticsParameters at intrinsic drain end satisfy 2f 1 Is an open state of the circuit.
(2) Parallel open-circuit transmission line T 12 Is at the third harmonic 3f of the low frequency band 1 Lower 90 deg., 3f at point D 1 Short-circuit state of (2); by adjusting the transmission line T 10 Characteristic impedance of (T) transmission line 11 Characteristic impedance Z and electrical length θ of (2) 1 In combination with transistor parasitic parameters, the 3f is satisfied at the intrinsic drain terminal 1 Is a short circuit condition of (c).
(3) In the high frequency band f 2 Down by adjusting the transmission line T 11 Electric length theta of (2) 2 Parallel open transmission line T 12 Characteristic impedance of (T) transmission line 13 Is combined with parasitic parameters of the transistor to satisfy the high-frequency band second harmonic 2f at the intrinsic drain end of the transistor 2 Open circuit state and third harmonic 3f of (2) 2 Is a short circuit condition of (c).
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (2)
1. A dual-band efficient inverse F-type power amplifier is characterized in that: the dual-band output matching circuit comprises a transistor, a dual-band input matching circuit, an RC stabilizing circuit, a dual-band grid DC bias circuit, a novel harmonic control circuit, a dual-band drain DC bias circuit with a harmonic control function and a dual-band output matching circuit; the dual-band input matching circuit provides a function of matching the optimal source impedance of the transistor with 50Ω, the output end of the dual-band input matching circuit is respectively connected with the input end of the RC stabilizing circuit and the dual-band grid direct current bias circuit, the dual-band grid direct current bias circuit provides conditions of fundamental wave open circuit and direct current short circuit at the two working frequency bands f1 and f2, and the output end of the RC stabilizing circuit is connected with the input end of the transistor; the input of the novel harmonic control circuit is connected with the output end of the transistor, and the output end of the novel harmonic control circuit is respectively connected with the dual-band drain DC bias circuit and the dual-band output matching circuit; the novel harmonic control circuit is composed of a transmission line T9, a transmission line T11 and a transmission line T13 which are connected in series, and a transmission line T10 and a transmission line T12 which are connected in parallel, wherein the transmission line T10 is connected between the transmission line T9 and the transmission line T11 in parallel, and the transmission line T12 is connected to the transmission line T11.
2. A dual band efficient reverse class F power amplifier as defined in claim 1, wherein: the dual-band output matching circuit can match the optimum fundamental load impedance of the transistor to 50Ω at fundamental frequencies f1 and f 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811212874.8A CN109546977B (en) | 2018-10-18 | 2018-10-18 | Dual-band efficient inverse F-type power amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811212874.8A CN109546977B (en) | 2018-10-18 | 2018-10-18 | Dual-band efficient inverse F-type power amplifier |
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| CN109546977A CN109546977A (en) | 2019-03-29 |
| CN109546977B true CN109546977B (en) | 2023-06-16 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110365301A (en) * | 2019-06-06 | 2019-10-22 | 宁波大学 | A kind of inverse E class radio-frequency power amplifier suitable for 5G |
| CN110324014B (en) * | 2019-07-19 | 2020-11-20 | 北京邮电大学 | Ultra-wideband high-efficiency power amplifier based on harmonic control network |
| CN111510087B (en) * | 2020-04-16 | 2021-10-22 | 北京邮电大学 | Co-time multi-frequency power amplifier circuit with multi-port frequency division output function |
| CN112311339A (en) * | 2020-11-02 | 2021-02-02 | 天津大学 | Double-frequency harmonic tuning efficient power amplifier |
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| JP2008160192A (en) * | 2006-12-20 | 2008-07-10 | Ntt Docomo Inc | Matching circuit and dual band power amplifier |
| CN101359903A (en) * | 2007-07-30 | 2009-02-04 | 株式会社瑞萨科技 | Semiconductor integrated circuit |
| CN104300925A (en) * | 2014-10-24 | 2015-01-21 | 天津大学 | High-efficiency class-F and inverse class-F power amplifier |
| CN104518742A (en) * | 2014-12-10 | 2015-04-15 | 天津大学 | High-efficiency double-frequency band F-type power amplifier |
| CN107547050A (en) * | 2017-08-21 | 2018-01-05 | 天津大学 | A kind of twin-stage double frequency-band high efficiency power amplifier |
-
2018
- 2018-10-18 CN CN201811212874.8A patent/CN109546977B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008160192A (en) * | 2006-12-20 | 2008-07-10 | Ntt Docomo Inc | Matching circuit and dual band power amplifier |
| CN101359903A (en) * | 2007-07-30 | 2009-02-04 | 株式会社瑞萨科技 | Semiconductor integrated circuit |
| CN104300925A (en) * | 2014-10-24 | 2015-01-21 | 天津大学 | High-efficiency class-F and inverse class-F power amplifier |
| CN104518742A (en) * | 2014-12-10 | 2015-04-15 | 天津大学 | High-efficiency double-frequency band F-type power amplifier |
| CN107547050A (en) * | 2017-08-21 | 2018-01-05 | 天津大学 | A kind of twin-stage double frequency-band high efficiency power amplifier |
Non-Patent Citations (1)
| Title |
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| Concurrent Dual-Band Class-F Load Coupling Network for Applications at 1.7 and 2.14 GHz;Renato Negra;《IEEE Transactions on Circuits and Systems II: Express Briefs》;20080321;第55卷(第3期);第259-263页 * |
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