CN106169918A - A kind of crystal oscillator and manufacture method thereof - Google Patents
A kind of crystal oscillator and manufacture method thereof Download PDFInfo
- Publication number
- CN106169918A CN106169918A CN201610509197.0A CN201610509197A CN106169918A CN 106169918 A CN106169918 A CN 106169918A CN 201610509197 A CN201610509197 A CN 201610509197A CN 106169918 A CN106169918 A CN 106169918A
- Authority
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- China
- Prior art keywords
- wafer
- upper cover
- pedestal
- insulation sheet
- containing cavity
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- Pending
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- 239000013078 crystal Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000872 buffer Substances 0.000 claims abstract description 49
- 238000009413 insulation Methods 0.000 claims abstract description 45
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 41
- 238000003466 welding Methods 0.000 claims abstract description 13
- 239000002937 thermal insulation foam Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000011034 rock crystal Substances 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 9
- 238000005476 soldering Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 238000001723 curing Methods 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 238000005253 cladding Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 238000010849 ion bombardment Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 6
- 238000009434 installation Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000006173 Good's buffer Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
A kind of crystal oscillator of embodiment of the present invention offer and manufacture method thereof, described crystal oscillator includes pedestal, is located at the conduction upper cover at pedestal top, the wafer being located in pedestal and is located at two pads of base bottom, described pedestal has containing cavity in conduction upper cover, two connection welding connections corresponding with described pad it are provided with bottom containing cavity, described wafer is located in described containing cavity, wafer surface is provided with electrode and is connected with connection welding one of them described, wherein, described conduction upper cover bottom surface has been sticked buffer insulation sheet, and buffer insulation sheet is positioned at above described wafer.Wafer and conduction upper cover are separated by the present invention by described buffer insulation sheet, serve good insulating effect, it is to avoid wafer and conduction upper cover impact moment short circuit；Buffer insulation sheet falls in orientation and can buffer wafer in the test process such as cylinder simultaneously, it is to avoid wafer damage ruptures.
Description
Technical field
The present invention relates to electronic applications, especially a kind of crystal oscillator and manufacture method thereof.
Background technology
Crystal oscillator is the general designation of quartz-crystal resonator and quartz oscillator, and it is the quartz utilizing and having piezoelectric effect
Crystal wafer manufactures, and its effect is to produce original clock frequency, produces after the zooming in or out of different frequency generators
Raw different bus frequency.Owing to crystal oscillator has, volume is little, lightweight, reliability is high, frequency stability advantages of higher, is employed
In the consumer electronics such as mobile phone, pad.
At present the structure of crystal oscillator is as it is shown in figure 1, include pedestal, be located at the conduction upper cover at pedestal top, be located in pedestal
Wafer and be located at two pads of base bottom, described pedestal has containing cavity in conduction upper cover, is provided with bottom containing cavity
Two connection welding are corresponding with described pad to be connected, and described wafer is located in described containing cavity, wafer surface be provided with electrode and its
In connection welding connect, described conduction upper cover is welded on pedestal.Its manufacturing process is by base of ceramic, wafer and conduction
Upper cover is linked together according to procedure for producing by adhesive or solder, but conduction upper cover is conductor, falling, cylinder etc.
In stress test, crystal oscillator bulk deformation causes wafer to cause wafer breakage problem with upper cover collision；It is, thus, sought for it is a kind of new
Scheme improve wafer distortion and collide, with conduction upper cover, the breakage problem that causes.
Summary of the invention
In order to overcome in prior art falling, cylinder time wafer easily cause rupture to ask with conduction upper cover collision
Topic, a kind of crystal oscillator that the embodiment of the present invention provides, effectively wafer and conduction upper cover can be carried out buffer insulation process, prevent crystalline substance
Body causes fracture damage with conduction upper cover collision.
A kind of crystal oscillator that the embodiment of the present invention provides, the conduction upper cover including pedestal, being located at pedestal top, is located in pedestal
Wafer and be located at two pads of base bottom, described pedestal has containing cavity in conduction upper cover, sets bottom containing cavity
Having that two connection welding are corresponding with described pad to be connected, described wafer is located in described containing cavity, wafer surface be provided with electrode with
One of them described connection welding connects, and wherein, described conduction upper cover bottom surface has been sticked buffer insulation sheet, and buffer insulation sheet is positioned at
Above described wafer.
A kind of crystal oscillator that the embodiment of the present invention provides, has been sticked buffer insulation sheet by conduction upper cover bottom surface, buffer insulation
Wafer and conduction upper cover are separated by sheet, serve good insulating effect, it is to avoid wafer and conduction upper cover impact moment short circuit；With
Time buffer insulation sheet fall in orientation and wafer can be buffered in the test process such as cylinder, it is to avoid wafer damage ruptures.Institute
State buffer insulation sheet and be sticked at conduction upper cover lower surface, easy for installation, saving space.
Insulation foam area described above is less than the aperture area of described containing cavity, and is more than the upper surface face of described wafer
Long-pending.
Buffer insulation sheet described above is insulation foam sheet.
Present configuration is simple, easy for installation, saves space.Use insulation foam as the material of buffer insulation sheet, become
This low, good buffer effect.
The manufacture method of a kind of crystal oscillator that the present invention provides, comprising:
Synthetic rock crystal is made wafer；
At wafer surface metal cladding, form electrode, and make metal layer thickness reach preset range；
The wafer forming electrode is fixed in the containing cavity of pedestal, and solidifies wafer；
Adjust the thickness of wafer surface electrode, make the frequency of crystal oscillator reach preset requirement；
Manufacturing conduction upper cover, described conduction upper cover bottom surface has been sticked buffer insulation sheet；
Pedestal is carried out soldering and sealing with conduction upper cover.
The manufacture method of a kind of crystal oscillator that the embodiment of the present invention provides, by the buffer insulation bottom conduction upper cover that is sticked
Sheet, isolates with conduction upper cover wafer, and method is simple, can effectively solve falling, during cylinder etc., crystal modification with
Conduction upper cover collides the breakage problem caused.
Described above manufacturing conduction upper cover, described conduction upper cover bottom surface is sticked the step of buffer insulation sheet, including:
Whole insulation foam is fitted on upper cover material；
According to described wafer and the size of described containing cavity, insulation foam is punched out described buffer insulation sheet；
According to described pedestal size, centered by buffer insulation sheet, upper cover material die is gone out described conduction upper cover.
Insulation foam is punched out described buffer insulation sheet by the size according to described wafer and described containing cavity described above
Step in, the area of described buffer insulation sheet is less than the aperture area of described containing cavity, and more than the upper surface of described wafer
Area.
The step that synthetic rock crystal is made wafer described above, including:
Synthetic rock crystal is cut into LED reverse mounting type by default cutting angle；
Described LED reverse mounting type is ground to the corresponding thickness of predeterminated frequency；
Described LED reverse mounting type is cut into the wafer of pre-set dimension size；
Remove the rough part of wafer surface.
Described above at wafer surface metal cladding, form electrode, and make metal layer thickness reach a range of step,
Specifically, form Gold plated Layer by ion bom bardment gold target sputtering wafer surface or form silver coating with vapour deposition method in wafer surface.
Described above the wafer forming electrode is fixed in the containing cavity of pedestal, and solidifies the step of wafer, specifically
For, with conductive silver glue, the electrode of described wafer is connected with any one connection welding bottom containing cavity, and uses baking-curing
Method curing conductive elargol.
The step that pedestal and conduction upper cover carry out soldering and sealing described above, is specially to be placed on pedestal with conduction upper cover and fills
The environment of full nitrogen or vacuum environment carry out soldering and sealing.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, in embodiment being described below required for make
Accompanying drawing be briefly described, the accompanying drawing in describing below is only the accompanying drawing of some embodiments of the present invention, for ability
From the point of view of the those of ordinary skill of territory, on the premise of not paying creative work, it is also possible to obtain the attached of other according to these accompanying drawings
Figure.
Fig. 1 is the structural representation of crystal oscillator in prior art；
The structural representation of the crystal oscillator that Fig. 2 provides for the embodiment of the present invention；
The schematic flow sheet of the crystal oscillator manufacture method that Fig. 3 provides for the embodiment of the present invention；
Manufacturing conduction upper cover in the crystal oscillator manufacture method that Fig. 4 provides for the embodiment of the present invention, described conduction upper cover bottom surface is pasted
It is provided with the schematic flow sheet of buffer insulation sheet step；
Synthetic rock crystal is made the flow process signal of wafer step by the crystal oscillator manufacture method that Fig. 5 provides for the embodiment of the present invention
Figure.
Detailed description of the invention:
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearer, below in conjunction with
Drawings and Examples, are further elaborated to the present invention.Should be appreciated that specific embodiment described herein is only used
To explain the present invention, it is not intended to limit the present invention.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Describe, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments wholely.Based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under not making creative work premise
Embodiment, broadly falls into the scope of protection of the invention.
Embodiment one:
The structural representation of the crystal oscillator that Fig. 2 provides for the embodiment of the present invention, the invention provides a kind of crystal oscillator structure, such as figure
Shown in 2, including pedestal 3, the conduction upper cover 1, the wafer 2 being located in pedestal 3 and be located at bottom pedestal 3 that are located at pedestal 3 top
Two pads 4, described pedestal 3 has containing cavity 5 in conduction upper cover 1, be provided with bottom containing cavity 5 two connection welding 6 with
Described pad 4 is corresponding to be connected, and described wafer 2 is located in described containing cavity 5, wafer 2 surface be provided with electrode 8 with described in one of them
Connection welding 6 connects, and its described conduction upper cover 1 bottom surface has been sticked buffer insulation sheet 7, and buffer insulation sheet 7 is positioned on described wafer 2
Side.
The area of buffer insulation sheet 7 described above is less than the aperture area of described containing cavity 5, and is more than described wafer 2
Upper surface area.
Buffer insulation sheet 7 described above is insulation foam sheet.
Crystal oscillator described in the present embodiment, by being sticked at the buffer insulation sheet 7 of described conduction upper cover 1 bottom surface, by wafer 2 He
Conduction upper cover 1 separates, and serves good insulating effect, it is to avoid wafer 2 and conduction upper cover 1 impact moment short circuit；Insulate simultaneously
Buffer substrate tablet 7 falls in orientation and can buffer wafer 2 in the test process such as cylinder, it is to avoid wafer 2 damages fracture.Described absolutely
Edge buffer substrate tablet 7 is sticked at conduction upper cover 1 lower surface, easy for installation, saving space.Use insulation foam as buffer insulation sheet
The cost of material is low, good buffer effect.
Embodiment two:
The schematic flow sheet of the crystal oscillator manufacture method that Fig. 3 provides for the embodiment of the present invention；Fig. 4 provides for the embodiment of the present invention
Crystal oscillator manufacture method in manufacture conduction upper cover, described conduction upper cover bottom surface be sticked buffer insulation sheet step flow process signal
Figure；Synthetic rock crystal is made the schematic flow sheet of wafer step by the crystal oscillator manufacture method that Fig. 5 provides for the embodiment of the present invention.
The manufacture method of a kind of crystal oscillator that the present invention provides, comprising:
Synthetic rock crystal is made wafer 2 by step 301；
Step 302, at wafer 2 plating metal on surface layer, forms electrode 8, and makes metal layer thickness reach preset range；
The wafer 2 forming electrode 8 is fixed in the containing cavity 5 of pedestal 3 by step 303, and solidifies wafer 2；
Step 304 adjusts the thickness of wafer 2 surface electrode 8, makes the frequency of crystal oscillator reach preset requirement；
Step 305 manufactures conduction upper cover 1, and described conduction upper cover 1 bottom surface has been sticked buffer insulation sheet 7；
Step 306 carries out soldering and sealing to pedestal 3 with conduction upper cover 1.
Step 305 described above manufactures conduction upper cover 1, and described conduction upper cover 1 bottom surface is sticked the step of buffer insulation sheet 7
Suddenly, including:
Whole insulation foam is fitted on upper cover material by step 3051；
Insulation foam, according to described wafer 2 and the size of described containing cavity 5, is punched out described buffer insulation by step 3052
Sheet 7；
Step 3053 is according to described pedestal 3 size, centered by buffer insulation sheet 7, upper cover material die is gone out described in lead
Electricity upper cover 1.
Insulation foam is punched out described according to the size of described wafer 2 and described containing cavity 5 by step 3052 described above
In the step of buffer insulation sheet 7, the area of described buffer insulation sheet 7 is less than the aperture area of described containing cavity 5, and is more than described
The upper surface area of wafer 2.
Synthetic rock crystal is made the step of wafer 2 by step 301 described above, including:
Synthetic rock crystal is cut into LED reverse mounting type by default cutting angle by step 3011；
Described LED reverse mounting type is ground to the corresponding thickness of predeterminated frequency by step 3012；
Described LED reverse mounting type is cut into the wafer 2 of pre-set dimension size by step 3013；
Step 3014 removes the rough part of wafer 2.
Step 3014 described above removes the step of the rough part of wafer 2, is specially and removes with chemical method for etching
The rough part of wafer 2.
Step 302 described above, at wafer 2 plating metal on surface layer, forms electrode 8, and makes metal layer thickness reach to preset model
The step enclosed, specifically, form Gold plated Layer or with vapour deposition method in wafer 2 surface shape with ion bom bardment gold target sputtering wafer 2 surface
Become silver coating.
The wafer 2 forming electrode 8 is fixed in the containing cavity 5 of pedestal 3 by step 303 described above, and solidifies wafer 2
Step, specifically, with conductive silver glue by any one connection welding 6 bottom the electrode 8 of described wafer 2 and containing cavity 5 even
Connect, and with baking-curing method curing conductive elargol.
Step 306 described above carries out the step of soldering and sealing to pedestal 3 and conduction upper cover 1, is specially on pedestal 3 and conduction
Cover in 1 environment being placed on full nitrogen or vacuum environment and carry out soldering and sealing.
The crystal oscillator manufacture method that the present embodiment provides, by being sticked at the buffer insulation sheet 7 of conduction upper cover 1 bottom surface, to crystalline substance
Sheet 2 is isolated with conduction upper cover 1, and method is simple, can effectively solve falling, during cylinder etc., crystal 2 deformation and conduction
Upper cover 1 collides the breakage problem caused.
In describing the invention, it is to be understood that term " on ", D score, " top ", " end ", " interior ", the instruction such as " outward "
Orientation or position relationship be based on orientation shown in the drawings or position relationship, be for only for ease of description the present invention and simplification retouch
State rather than indicate or imply the device of indication or element must have specific orientation, with specific azimuth configuration and operation,
Therefore it is not considered as limiting the invention.
Above disclosed it is only one preferred embodiment of the present invention, certainly can not limit the power of the present invention with this
Profit scope, one of ordinary skill in the art will appreciate that all or part of flow process realizing above-described embodiment, and weighs according to the present invention
Profit requires the equivalent variations made, and still falls within the scope that invention is contained.
Claims (10)
1. a crystal oscillator, including pedestal, the conduction upper cover, the wafer being located in pedestal and be located at the bottom of pedestal that are located at pedestal top
Two pads in portion, described pedestal has containing cavity in conduction upper cover, is provided with two connection welding with described bottom containing cavity
Pad correspondence connects, and described wafer is located in described containing cavity, and wafer surface is provided with electrode and one of them described connection welding
Connect, it is characterised in that described conduction upper cover bottom surface has been sticked buffer insulation sheet, and buffer insulation sheet is positioned at above described wafer.
A kind of crystal oscillator the most according to claim 1, it is characterised in that described buffer insulation sheet area is less than described containing cavity
Aperture area, and more than the upper surface area of described wafer.
A kind of crystal oscillator the most according to claim 1 and 2, it is characterised in that described buffer insulation sheet is insulation foam sheet.
4. the manufacture method of a crystal oscillator, it is characterised in that including:
Synthetic rock crystal is made wafer；
At wafer surface metal cladding, form electrode, and make metal layer thickness reach preset range；
The wafer forming electrode is fixed in the containing cavity of pedestal, and solidifies wafer；
Adjust the thickness of wafer surface electrode, make the frequency of crystal oscillator reach preset requirement；
Manufacturing conduction upper cover, described conduction upper cover bottom surface has been sticked buffer insulation sheet；
Pedestal is carried out soldering and sealing with conduction upper cover.
Method the most according to claim 4, it is characterised in that described manufacture conduction upper cover, described conduction upper cover bottom surface is pasted
It is provided with the step of buffer insulation sheet, including:
Whole insulation foam is fitted on upper cover material；
According to described wafer and the size of described containing cavity, insulation foam is die-cut into described buffer insulation sheet；
According to described pedestal size, centered by buffer insulation sheet, upper cover material die is gone out described conduction upper cover.
Method the most according to claim 5, it is characterised in that the described size according to described wafer and described containing cavity will
Insulation foam punches out in the step of described buffer insulation sheet, and the area of described buffer insulation sheet is less than the opening of described containing cavity
Area, and more than the upper surface area of described wafer.
Method the most according to claim 4, it is characterised in that the described step that synthetic rock crystal is made wafer, including:
Synthetic rock crystal is cut into LED reverse mounting type by default cutting angle；
Described LED reverse mounting type is ground to the corresponding thickness of predeterminated frequency；
Described LED reverse mounting type is cut into the wafer of pre-set dimension size；
Remove the rough part of wafer surface.
Method the most according to claim 4, it is characterised in that described at wafer surface metal cladding, forms electrode, and makes
Metal layer thickness reaches a range of step, specifically, form Gold plated Layer or use by ion bom bardment gold target sputtering wafer surface
Vapour deposition method forms silver coating in wafer surface.
Method the most according to claim 4, it is characterised in that the described appearance that the wafer forming electrode is fixed on pedestal
Put intracavity, and solidify the step of wafer, specifically, with any one by bottom the electrode of described wafer and containing cavity of conductive silver glue
Individual connection welding connects, and with baking-curing method curing conductive elargol.
Method the most according to claim 4, it is characterised in that the described step that pedestal and conduction upper cover are carried out soldering and sealing,
It is specially to be placed in the environment of full nitrogen or vacuum environment pedestal with conduction upper cover and carries out soldering and sealing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610509197.0A CN106169918A (en) | 2016-06-29 | 2016-06-29 | A kind of crystal oscillator and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610509197.0A CN106169918A (en) | 2016-06-29 | 2016-06-29 | A kind of crystal oscillator and manufacture method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106169918A true CN106169918A (en) | 2016-11-30 |
Family
ID=58066152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610509197.0A Pending CN106169918A (en) | 2016-06-29 | 2016-06-29 | A kind of crystal oscillator and manufacture method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106169918A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107733394A (en) * | 2017-09-18 | 2018-02-23 | 维沃移动通信有限公司 | A kind of crystal oscillator and preparation method thereof and electronic equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2058506B (en) * | 1979-09-07 | 1983-09-28 | Hitachi Ltd | Package for electric device |
| JPH0529870A (en) * | 1991-07-23 | 1993-02-05 | Matsushita Electric Ind Co Ltd | Chip-type surface wave device |
| CN1839543A (en) * | 2004-07-14 | 2006-09-27 | 株式会社村田制作所 | Piezoelectirc device |
| CN201639552U (en) * | 2010-02-03 | 2010-11-17 | 台晶(宁波)电子有限公司 | Resin package quartz-crystal resonator |
| CN102377401A (en) * | 2010-08-23 | 2012-03-14 | 精工电子有限公司 | Electronic device, electronic apparatus, and electronic device manufacturing method |
| CN103081095A (en) * | 2010-10-28 | 2013-05-01 | 京瓷株式会社 | Electronic device |
| CN103944532A (en) * | 2013-01-23 | 2014-07-23 | 精工电子有限公司 | Electronic device and method for manufacturing electronic device |
| CN204013436U (en) * | 2014-08-08 | 2014-12-10 | 深圳市新天源电子有限公司 | Carry the quartz-crystal resonator of insulation effect |
-
2016
- 2016-06-29 CN CN201610509197.0A patent/CN106169918A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2058506B (en) * | 1979-09-07 | 1983-09-28 | Hitachi Ltd | Package for electric device |
| JPH0529870A (en) * | 1991-07-23 | 1993-02-05 | Matsushita Electric Ind Co Ltd | Chip-type surface wave device |
| CN1839543A (en) * | 2004-07-14 | 2006-09-27 | 株式会社村田制作所 | Piezoelectirc device |
| CN201639552U (en) * | 2010-02-03 | 2010-11-17 | 台晶(宁波)电子有限公司 | Resin package quartz-crystal resonator |
| CN102377401A (en) * | 2010-08-23 | 2012-03-14 | 精工电子有限公司 | Electronic device, electronic apparatus, and electronic device manufacturing method |
| CN103081095A (en) * | 2010-10-28 | 2013-05-01 | 京瓷株式会社 | Electronic device |
| CN103944532A (en) * | 2013-01-23 | 2014-07-23 | 精工电子有限公司 | Electronic device and method for manufacturing electronic device |
| CN204013436U (en) * | 2014-08-08 | 2014-12-10 | 深圳市新天源电子有限公司 | Carry the quartz-crystal resonator of insulation effect |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107733394A (en) * | 2017-09-18 | 2018-02-23 | 维沃移动通信有限公司 | A kind of crystal oscillator and preparation method thereof and electronic equipment |
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Application publication date: 20161130 |
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