CN106134090B - High-frequency model - Google Patents
High-frequency model Download PDFInfo
- Publication number
- CN106134090B CN106134090B CN201580017775.2A CN201580017775A CN106134090B CN 106134090 B CN106134090 B CN 106134090B CN 201580017775 A CN201580017775 A CN 201580017775A CN 106134090 B CN106134090 B CN 106134090B
- Authority
- CN
- China
- Prior art keywords
- straight line
- substrate
- annulus
- inductor
- frequency model
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims abstract description 104
- 238000010276 construction Methods 0.000 claims description 5
- 125000004122 cyclic group Chemical group 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 35
- 239000004020 conductor Substances 0.000 description 22
- 239000011229 interlayer Substances 0.000 description 8
- 230000005611 electricity Effects 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010295 mobile communication Methods 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010022998 Irritability Diseases 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- BGOFCVIGEYGEOF-UJPOAAIJSA-N helicin Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1OC1=CC=CC=C1C=O BGOFCVIGEYGEOF-UJPOAAIJSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Coils Or Transformers For Communication (AREA)
- Transceivers (AREA)
Abstract
High-frequency model includes the multiple helical inductor devices (31) for having the substrate (12) of interarea and being arranged on substrate (12), when overlooking interarea, multiple helical inductor devices have cyclic annular extend and along the staggered annulus of prescribed direction (32).Multiple helical inductor devices (31) include the helical inductor device (31Q) of helical inductor device (31P) and configuration adjacent thereto.The annulus (32) of helical inductor device (31P) includes the straight line portion (32m) linearly extended.The annulus (32) of helical inductor device (31Q) includes straight line portion (32n) opposite with straight line portion (32m) on relative to the inclined direction of prescribed direction when linearly extending and overlook the interarea of substrate (12) on the direction parallel with straight line portion (32m).Thus a kind of high-frequency model can be shortened substrate overall length and enough insulating properties are obtained between adjacent inductor is provided.
Description
Technical field
The present invention relates to high-frequency models.
Background technique
About existing high-frequency model, for example, disclosing a kind of High Frequency Of Recombination in International Publication No. 2007/088732
Component makes mobile communications device miniaturization the purpose is to reduce component number, simplifies mobile communications device
The circuit design (patent document 1) in high-frequency circuit portion.In patent document 1 disclosed High Frequency Of Recombination component have be inserted into it is more
The inside of laminar substrate and it is arranged to the multiple spiral helicine inductors arranged in one direction when overlooking multilager base plate.
Existing technical literature patent document
Patent document 1: International Publication No. 2007/088732
Summary of the invention
The technical problems to be solved by the invention
As disclosed in above-mentioned patent document 1, it is known to be used as antenna switch module of mobile communications device etc.
High Frequency Of Recombination component.In the High Frequency Of Recombination component, for the miniaturization of realization device, it is desirable that shorten the complete of multilager base plate
It is long.On the one hand, if being arranged multiple helical inductor devices with thin space, electricity adjacent to each other to cope with above-mentioned requirement
Electromagnetic coupling can occur between sensor, so as to which enough insulating properties (Isolation- insulating properties) can not be obtained.
Therefore, the purpose of the present invention is to solve the problem above-mentioned, one kind is provided and not only realizes the overall length for shortening substrate but also in phase
The high-frequency model of enough insulating properties is obtained between adjacent inductor.
Solve the technical solution of technical problem
The high-frequency model of 1 aspect according to the present invention includes: the substrate with interarea；And it is set to the multiple of substrate
Inductor, when overlooking the interarea of substrate, multiple inductor has the annulus of the shape annularly extended, and annulus
Along the cross-shaped arrangement of prescribed direction.Multiple inductors include second that the first inductor and the first inductor are configured adjacently
Inductor.The annulus of first inductor includes the first straight line linearly extended.The annulus of second inductor includes
Second straight line, the second straight line linearly extend on the direction parallel with first straight line, in the master for overlooking substrate
It is opposite with first straight line on relative to the inclined direction of prescribed direction when face.
According to high-frequency model constituted as described above, first straight line and second straight line are tilted relative to prescribed direction
Direction on it is opposite, therefore even if the case where being thin space between multiple inductors along the cross-shaped arrangement of prescribed direction
Under, also it is easy to ensure that insulating properties between annulus.Therefore, it is able to achieve the overall length for shortening substrate and is obtained between adjacent inductor
Enough to insulating properties high-frequency model.
It is highly preferred that when overlooking the interarea of substrate, substrate be in first while, with first while the square on the second side that intersects
Shape shape.Prescribed direction is the direction that the first side extends.According to high-frequency model as constituted above, it can be shortened and extend on the first side
Direction on substrate overall length, and can ensure that enough insulating properties between adjacent inductor.
It is highly preferred that first while length than second while it is longer.According to high-frequency model as constituted above, can be shortened at
The substrate overall length on direction extended for the first side of long side, and can ensure that enough insulating properties between adjacent inductor.
High-frequency model according to another aspect of the present invention includes: the substrate with interarea；And multiple inductors, it should
Multiple inductors are set to substrate, and when overlooking the interarea of substrate, multiple inductor has the ring of the shape annularly extended
Shape portion.Multiple inductors include the second inductor that the first inductor and the first inductor are configured adjacently.The ring of first inductor
Shape portion includes the first straight line linearly extended.The annulus of second inductor is included in not parallel with first straight line
On direction linearly extend and the second straight line opposite with first straight line.
According to high-frequency model as constituted above, first straight line is arranged to be not parallel to each other with second straight line, therefore
Even if by the first inductor and the second inductor close to configuration, also it is easy to ensure that insulating properties between annulus.Cause
This, is able to achieve the overall length for shortening substrate and the high-frequency model that enough insulating properties are obtained between adjacent inductor.
It is highly preferred that first straight line and second straight line angle at 45 °.According to high-frequency model as constituted above, hold
Easily further ensure that the insulating properties between annulus.
It is highly preferred that multiple inductors are arranged to annulus and arrange in one direction when overlooking the interarea of substrate.Root
According to high-frequency model as constituted above, the substrate overall length in the orientation of multiple inductors can be shortened, and can ensure that adjacent
Inductor between enough insulating properties.
It is highly preferred that multiple inductors are arranged to annulus along prescribed direction in staggeredly when overlooking the interarea of substrate
Shape arrangement.According to high-frequency model as constituted above, the substrate overall length on the direction of the cross-shaped arrangement of annulus can be shortened, and
It can ensure that enough insulating properties between adjacent inductor.
It is highly preferred that high-frequency model is also equipped with wiring, the wiring is between the first inductor and the second inductor
Mode is disposed on the substrate, and is connect with earthing potential.According to high-frequency model as constituted above, it is easy to ensure that the first inductance
Insulating properties between device and the second inductor.
It is highly preferred that high-frequency model is also equipped with the switch element with multiple contacts.First inductor and the second inductor
Respectively as the matching element for eliminating the capacitive generated between multiple contacts, it is connect with multiple contacts.
According to high-frequency model as constituted above, enough insulation can be obtained between the inductor being arranged as matching element
Property.
It is highly preferred that substrate has the stepped construction that multiple insulating layers are laminated to be formed.In the stacking from multiple insulating layers
When substrate is observed in direction, annulus has the shape annularly extended.
According to high-frequency model as constituted above, being able to achieve to shorten has the stepped construction that multiple insulating layers are laminated to be formed
Substrate overall length, and obtain between adjacent inductor the high-frequency model of enough insulating properties.
Invention effect
As described above, according to the present invention it is possible to provide it is a kind of realize shorten substrate overall length and in adjacent inductance
The high-frequency model of enough insulating properties is obtained between device.
Detailed description of the invention
Fig. 1 is the cross-sectional view for showing the high-frequency model of embodiments of the present invention 1.
The perspective view for the high-frequency model that Fig. 2 is obtained from being the direction shown in the arrow II of Fig. 1.
Fig. 3 is by the perspective view of the high-frequency model local enlargement display in Fig. 2.
Fig. 4 is the perspective view shown for relatively high frequency module.
Fig. 5 is the perspective view for showing the high-frequency model of embodiments of the present invention 2.
Fig. 6 is the perspective view for showing the 1st variation of the high-frequency model in Fig. 5.
Fig. 7 is the perspective view for showing the 2nd variation of the high-frequency model in Fig. 5.
Fig. 8 is the perspective view for showing the 3rd variation of the high-frequency model in Fig. 5.
Fig. 9 is the circuit diagram for showing the high-frequency model of embodiments of the present invention 3.
Figure 10 is the perspective view with the high-frequency model in the range of double dot dash line X encirclement shown in Fig. 9.
Specific embodiment
For embodiments of the present invention, it is described with reference to the accompanying drawings.In addition, referring to attached drawing in, to identical or
Person is identically numbered with its comparable component mark.
(embodiment 1)
Fig. 1 is the cross-sectional view for showing the high-frequency model of embodiments of the present invention 1.Fig. 2 is shown in the arrow II from Fig. 1
The perspective view for the high-frequency model that direction is observed.In fig. 1 it is illustrated that cuing open along the high-frequency model on the I-I line in Fig. 2
Face.
Referring to Fig.1 with Fig. 2, the high-frequency model 10 of present embodiment includes substrate 12, the multiple spiral shells of setting on the substrate 12
Revolve shape inductor 31.
Substrate 12 is made of insulating material.Substrate 12 has interarea 12a.Interarea 12a is in multiple sides that substrate 12 includes
There is maximum area in face.In the present embodiment, in the interarea 12a for being observed from the front substrate 12, substrate 12 has square
The plan view shape (hereinafter, by also referred to as " substrate 12 is overlooked " when the interarea 12a for being observed from the front substrate 12) of shape.It overlooks
When, substrate 12 is with long side 13 and the short side 14 intersected with long side 13.Long side 13 just upwardly extends shown in the first arrow 102
(hereinafter also referred to as the longitudinal direction of substrate 12), vertical direction i.e. second arrow in the direction shown in the first arrow 102 of short side 14
It is just upwardly extended shown in first 103.Long side 13 and short side 14 are respectively provided with length W and length L.The length L of short side 14 compares long side
13 length W shorter (L < W).
Substrate 12 is that have that multiple insulating layer 21A, 21B, 21C, 21D, 21E are laminated (hereinafter, not distinguishing especially
In the case where, referred to as insulating layer 21) come the Mulitilayer circuit board of the stepped construction formed.Insulating layer 21 is using by ceramics or tree
The insulating material that rouge is formed is formed.(liquid crystal is poly- by such as polyimides, LCP for the material for the insulating layer 21 being formed by resin
Close object), PEEK (polyether-ether-ketone), PPS (polyphenylene sulfide) formation.Especially in the present embodiment, substrate 12 is by using ceramics
The ceramic substrate of material is constituted.LTCC can be used in ceramic substrate, and (Low Temperature Co-fired Ceramics- is low
Warm common burning porcelain) substrate or HTCC (High Temperature Co-fired Ceramics- high-temperature co-fired ceramics) base
Plate.Surface and internal, the wiring that setting is formed by conductive material in Mulitilayer circuit board.
Multiple insulating layers 21 are laminated on a direction shown in third arrow 101.Insulating layer 21A, insulating layer 21B, absolutely
Edge layer 21C, insulating layer 21D and insulating layer 21E are arranged from the top down according to the sequence enumerated.Substrate 12 is from the insulating layer 21
Stacking direction observation when, with rectangle plan view shape.The length (thickness) of substrate 12 on the stacking direction of insulating layer 21
Length than long side 13 and short side 14 is smaller.
In addition, substrate 12 also can have square plan view shape, be not limited to rectangular shape, can also have rectangle with
Outer arbitrary plan view shape.Substrate 12 is also not necessarily intended to stepped construction.
Helical inductor device 31 is formed by conductive material.Helical inductor device 31 by copper, silver, aluminium, stainless steel, nickel or
The metals such as gold or the alloy comprising these metals etc. are formed.
There is helical inductor device 31 annulus 32 to be used as its structure position.Annulus 32 has when overlooking substrate 12
The shape annularly extended.In the present embodiment, annulus 32 has four sides along rectangle (more specifically, square)
Circular shape (the circular shape of rectangle).
The inside of substrate 12 is arranged in annulus 32.More specifically, annulus 32 is separately positioned on adjacent insulating layer
21 interlayer (interlayer of insulating layer 21A and insulating layer 21B, the interlayer of insulating layer 21B and insulating layer 21C, insulating layer 21C and absolutely
The interlayer of edge layer 21D, the interlayer of insulating layer 21D and insulating layer 21E).The annulus 32 that each interlayer is arranged in is utilized each other exhausted
The internal via hole conductor (not shown) that the stacking direction of edge layer 21 extends is mutually connected.Utilize above-mentioned structure, helical form electricity
The whole stacking direction shape that helically (spiral yarn shaped) shape extends having along insulating layer 21 of sensor 31.
Fig. 3 is the perspective view that the high-frequency model in Fig. 2 is locally amplified to display.Referring to figs. 1 to Fig. 3, multiple helical forms
Inductor 31 is arranged to annulus 32 along the cross-shaped arrangement in direction shown in the first arrow 102 (hereinafter, also by annulus 32
The direction of cross-shaped arrangement is known as the direction that is staggered of annulus 32).Annulus 32 is along shown in the second arrow 103
It is alternately staggered on one direction in direction and opposite direction, and is arranged as a whole along direction shown in the first arrow 102.
In the present embodiment, the direction that is staggered of annulus 32 is consistent with the longitudinal direction of substrate 12.In more detail, multiple spiral shells
A part in shape inductor 31 is revolved in the prescribed direction (longitudinal direction (staggered row of substrate 12 of the interarea 12a along substrate 12
Column direction)) on arrange with separating spacing P1.Moreover, the master of remainder in multiple helical inductor devices 31 along substrate 12
Face 12a separates spacing P1 arrangement in above-mentioned prescribed direction, and it is above-mentioned more to arrange distance on direction in the direction orthogonal to the prescribed direction
The center of the spacing P1 of a part in a helical inductor device 31 is on the position of predetermined distance B.
In multiple helical inductor devices 31, the helical inductor device 31P optionally gone out as the first inductor and conduct are paid close attention to
The helical inductor device 31Q that second inductor and above-mentioned helical inductor device 31P are configured adjacently.The ring of helical inductor device 31P
Shape portion 32 has straight line portion 32m as its structure position.The annulus 32 of helical inductor device 31Q has straight line portion 32n conduct
Its structure position.
Straight line portion 32m and straight line portion 32n between helical inductor device 31P and helical inductor device 31Q relative to one another
Setting.
Straight line portion 32m linearly extends with straight line portion 32n.What straight line portion 32m and straight line portion 32n and annulus 32 were constituted
Corresponding in the circular shape of rectangle on one side.Straight line portion 32m is extended parallel to each other with straight line portion 32n.Straight line portion 32m and straight line
Portion 32n is upwardly extended in the inclined side in the direction that is staggered relative to annulus 32.
When overlooking substrate 12, direction straight line portion 32m shown in the 4th arrow 106 opposite with straight line portion 32n is opposite
The inclined direction in the direction that is staggered of the annulus 32 shown in the first arrow 102.That is, straight line portion 32m and straight line portion 32n phase
Pair direction and annulus 32 the direction that is staggered it is not parallel, and handed over the poor direction that is staggered of annulus 32.
Especially in the present embodiment, with rectangle the annulus 32 around shape with the long side 13 of substrate 12 with it is short
45 ° are tilted on the basis of side 14 to be arranged.Direction straight line portion 32m opposite with straight line portion 32n is interlocking relative to annulus 32
Orientation tilts 45 ° of direction.
In addition, annulus 32 is not limited to the circular shape of rectangle.For example, annulus 32 also can have comprising rectangle,
The circular shape of parallelogram including positive direction, diamond shape, in the helical inductor device from the stacking direction of substrate 12
When, there is opposite a pair of of straight line portion in parallel to each other and connect with above-mentioned a pair of of straight line portion and phase in parallel to each other
Pair another pair straight line portion.Moreover, annulus 32 also can have the circular shape of the polygon other than rectangle.In addition, in base
It is shortest in the mutual distance of 2 annulus 32 in 2 annulus 32 adjacent to each other being arranged on the same dielectric layer of plate 12
Straight line portion 32m and straight line portion 32n is respectively set in part.
In the present embodiment, although multiple helical inductor devices 31 are configured to adjacent annulus 32 and do not generate each other
The part being overlapped on the direction that is staggered of annulus 32, but it is not limited to above-mentioned structure, it also can be configured to generate overlapping
Part.In addition, in Fig. 2 and Fig. 3, although the corner of the shape representation annulus 32 using straight line intersection, in the present invention,
As long as there are straight line portions at least part of annulus, the corner of annulus can also be set as taper or curve shape.
Fig. 4 is the perspective view shown for relatively high frequency module.Fig. 4 is the high-frequency model 10 with expression present embodiment
The corresponding figure of Fig. 2.
Referring to Fig. 4, in this comparative example, multiple helical inductor devices 31 are arranged to annulus 32 in the long side side of substrate 12
To forming a line.In such a configuration, in order to minimize high-frequency model, if multiple helical inductor devices are arranged with thin space
31, then it is closer to each other in adjacent 31 annulus 32 of helical inductor device, to be difficult to obtain enough insulation between the two
Property.
Referring to figs. 1 to Fig. 3, in contrast, in the high-frequency model 10 of present embodiment, in adjacent helical inductor device
Between 31, straight line portion 32m and straight line portion 32n are opposite on the inclined direction in the direction that is staggered relative to annulus 32.According to
Above-mentioned structure, even if opposite straight line can also be made by multiple helical inductor devices 31 with thin space N setting
Portion 32m is located remotely from each other to configure with straight line portion 32n.Thus, it is possible to shorten the substrate 12 of annulus 32 being staggered on direction
Length (in present embodiment, the length of the longitudinal direction of substrate 12), and can be between adjacent helical inductor device 31
Obtain enough insulating properties.
In addition, in the present embodiment, although the longitudinal direction in be staggered direction and substrate 12 for annulus 32
Unanimous circumstances are illustrated, but present aspect is not limited to above-mentioned structure.For example, the direction that is staggered of annulus 32 can
With consistent with the short side direction of substrate 12, it is also possible to the longitudinal direction and the inclined direction of short side direction relative to substrate 12.
In addition, being to have along the stacking direction of insulating layer 21 to be in for inductor of the invention in the present embodiment
The case where helical inductor device 31 for the shape that helical form (helix shape) extends, is illustrated, but be not restricted to that above-mentioned
Structure.For example, the annulus 32 of present embodiment can be and be arranged on the surface layer of substrate 12, it is also possible to be arranged in substrate
On 12 different layers.One example of the structure as the latter, it is assumed that annulus 32 is alternately located at the insulating layer in Fig. 1
The case where interlayer of the interlayer and insulating layer 21B and insulating layer 21C of 21A and insulating layer 21B.Even if in this case, if
Annulus 32 is arranged in staggered in the case where having an X-rayed to substrate 12 with overlooking, and is also suitable the present invention.
If being further illustrated for the structure of the high-frequency model 10 of present embodiment, high-frequency model 10, which also has, to be set
It is placed in the ground via conductor 41 of substrate 12.Ground via conductor 41 is formed by conductive material.Ground via conductor 41 is with edge
Insulating layer 21 stacking direction extend mode penetrate through setting.Ground via conductor 41 is as the wiring connecting with earthing potential
Setting is on the substrate 12.Helical inductor device 31P and helical inductor device 31Q adjacent to each other is arranged in ground via conductor 41
Between.
Helical inductor device 31 also there is extension 33 to be used as its structure position.When overlooking substrate 12, extension 33 is set
It is set to from annulus 32 and extends.In the present embodiment, extension 33 is arranged to from the ring-type around shape with rectangle
The corner in portion 32 extends to a direction.
The interval configuration between each other of extension 33 of the extension 33 and helical inductor device 31Q of helical inductor device 31P.
The extension 33 of helical inductor device 31P and the extension 33 of helical inductor device 31Q are in the direction that is staggered of annulus 32
On be alternatively arranged.
In the present embodiment, the via hole conductor connecting with earthing potential i.e. ground via conductor 41 is arranged to be located at each other
Between the annulus 32 of adjacent helical inductor device 31P and the annulus 32 of helical inductor device 31Q.Ground via conductor 41
It is arranged between the extension 33 of helical inductor device 31P adjacent to each other and the extension 33 of helical inductor device 31Q.
According to above-mentioned structure, setting is connected to the ground connection of earthing potential between helical inductor device 31 adjacent to each other
Via hole conductor 41, therefore even if adjacent spiral can be also more efficiently prevented from the case where annulus 32 are arranged with thin space
Electromagnetic coupling between shape inductor 31.
If summarizing explanation, this implementation to the structure of the high-frequency model 10 of embodiments of the present invention 1 as described above
The high-frequency model 10 of mode includes the substrate 12 and multiple helical inductor devices 31 as inductor with interarea 12a, should
Multiple settings of helical inductor device 31 on the substrate 12, and when overlooking the interarea 12a of substrate 12, have the shape annularly extended
The annulus 32 of shape, annulus 32 is along the cross-shaped arrangement of prescribed direction.Multiple helical inductor devices 31 include to be used as first
The helical inductor device 31P of inductor and the helical form electricity as the second inductor being configured adjacently with helical inductor device 31P
Sensor 31Q.The annulus 32 of helical inductor device 31P includes the straight line portion 32m as the first straight line linearly extended.
The annulus 32 of helical inductor device 31Q includes straight line portion 32n as second straight line, straight line portion 32n with straight line portion
Linearly extend on 32m parallel direction, when overlooking the interarea 12a of substrate 12, relative to the inclined side of prescribed direction
It is opposite with straight line portion 32m upwards.
According to the high-frequency model 10 of embodiments of the present invention 1 formed as described above, the overall length of substrate 12 can be shortened,
And enough insulating properties can be obtained between helical inductor device 31 adjacent to each other.
(embodiment 2)
Fig. 5 is the perspective view for showing the high-frequency model of embodiments of the present invention 2.Fig. 5 and the Fig. 6 illustrated below are extremely
Fig. 8 figure corresponding with Fig. 3 of embodiment 1.The high-frequency model of present embodiment compared with the high-frequency model 10 of embodiment 1,
The configuration (arrangement) of mainly annulus 32 is different.Hereinafter, for the duplicate structure of high-frequency model 10 with embodiment 1, no
Repeated explanation
Referring to Fig. 5, multiple helical inductor devices 31 are arranged to annulus 32 and arrange in one direction.In present embodiment
In, the orientation of annulus 32 is consistent with the direction that the long side 13 of substrate 12 shown in the first arrow 102 extends.
In addition, the orientation of annulus 32 is not limited to annulus 32 in the longitudinal direction and embodiment 1 of substrate 12
Be staggered direction explanation it is identical.
In multiple helical inductor devices 31, observation optionally go out helical inductor device 31P and with helical inductor device 31P
The helical inductor device 31Q being configured adjacently.The annulus 32 of helical inductor device 31P has straight line portion 32m as its structural portion
Position.The annulus 32 of helical inductor device 31Q has straight line portion 32n as its structure position.
Straight line portion 32m and straight line portion 32n is oppositely disposed between helical inductor device 31P and helical inductor device 31Q.
Straight line portion 32m linearly extends with straight line portion 32n.What straight line portion 32m and straight line portion 32n and annulus 32 were constituted
Closer to each other and opposite in the circular shape of rectangle corresponds on one side.Straight line portion 32m and straight line portion 32n prolongs with being not parallel to each other
It stretches.
In the present embodiment, the annulus 32 of the helical inductor device 31P around shape with rectangle is relative to base
The long side 13 of plate 12 is set in parallel with short side 14, on the other hand, the helical inductor device 31Q's around shape with rectangle
Annulus 32 is obliquely arranged on the basis of the long side 13 of substrate 12 and short side 14.Multiple helical inductor devices 31 are arranged to spiral
Shape inductor 31P and helical inductor device 31Q are alternately arranged, wherein helical inductor device 31P has with the long side 13 of substrate 12
With annulus 32 not inclined on the basis of short side 14, helical inductor device 31Q has with the long side 13 of substrate 12 is with short side 14
The inclined annulus 32 of benchmark.
As a result, in the high-frequency model of present embodiment, between adjacent helical inductor device 31, straight line portion 32m and straight
Line portion 32n is arranged to not parallel.Using above-mentioned structure, even if in the feelings that multiple helical inductor devices 31 are arranged with thin space
Under condition, compared with the comparative example shown in Fig. 4, straight line portion 32m and position straight line portion 32n closer to each other also can be reduced.As a result,
Can shorten the substrate 12 in the orientation of annulus 32 length (in present embodiment, the length of the longitudinal direction of substrate 12
Degree), and enough insulating properties can be obtained between adjacent helical inductor device 31.
In addition, being respectively provided with the straight line portion 32m's and straight line portion 32n being not parallel to each other in multiple helical inductor devices 31
Helical inductor device 31P and helical inductor device 31Q at least have 1 group.
Fig. 6 is the perspective view for showing the 1st variation of the high-frequency model in Fig. 5.Referring to Fig. 6, in this variation, straight line
Portion 32m and straight line portion 32n angle at 45 °.
The annulus 32 of the helical inductor device 31Q around shape with rectangle relative to substrate 12 long side 13 with it is short
Side 14 is set in parallel, and on the other hand, the annulus 32 of the helical inductor device 31P around shape with rectangle is with substrate 12
Long side 13 with tilt 45 ° on the basis of short side 14 and be arranged.Multiple helical inductor devices 31 be arranged to helical inductor device 31Q and
Helical inductor device 31P is alternately arranged, wherein it is base that helical inductor device 31Q, which has with the long side 13 of substrate 12 and short side 14,
Quasi- not inclined annulus 32, helical inductor device 31P have 45 ° of the inclination on the basis of the long side 13 of substrate 12 and short side 14
Annulus 32.
Straight line portion 32m using closest to the position of straight line portion 32n as vertex, in a manner of far from straight line portion 32n to its two
Side extends.
According to above-mentioned structure, though in the case where multiple helical inductor devices 31 are arranged with thin space, pass through by
Straight line portion 32m and position straight line portion 32n closer to each other are reduced to minimum limit, so as to more efficiently prevent from adjacent spiral shell
Revolve the electromagnetic coupling between shape inductor 31.
Fig. 7 is the perspective view for showing the 2nd variation of the high-frequency model in Fig. 5.Referring to Fig. 7, the high frequency mould of the present embodiment
Block also has the ground via conductor 41 for being connected to earthing potential.Helical form electricity adjacent to each other is arranged in ground via conductor 41
Between sensor 31P and helical inductor device 31Q.
Ground via conductor 41 is arranged to annulus 32 and the helical form electricity positioned at helical inductor device 31P adjacent to each other
Between the annulus 32 of sensor 31Q.Ground via conductor 41 is arranged to the extension positioned at helical inductor device 31P adjacent to each other
Between portion 33 and the extension 33 of helical inductor device 31Q.
According to above-mentioned structure, setting is connected to the ground connection of earthing potential between helical inductor device 31 adjacent to each other
Via hole conductor 41, therefore in the case where annulus 32 are arranged with thin space, adjacent helical inductor can be more efficiently prevented from
Electromagnetic coupling between device 31.
Fig. 8 is the perspective view for showing the 3rd variation of the high-frequency model in Fig. 5.It is in this comparative example, multiple referring to Fig. 8
Helical inductor device 31 is arranged to annulus 32 along the cross-shaped arrangement in direction shown in the first arrow 102.Straight line portion 32m with
Straight line portion 32n angle at 45 °.
The annulus 32 of the helical inductor device 31Q around shape with rectangle relative to substrate 12 long side 13 with it is short
Side 14 is set in parallel, and on the other hand, the annulus 32 of the helical inductor device 31P around shape with rectangle is with substrate 12
Long side 13 with tilt 45 ° on the basis of short side 14 and be arranged.Multiple helical inductor devices 31 be arranged to helical inductor device 31Q and
Helical inductor device 31P is alternately staggered, wherein helical inductor device 31Q has with the long side 13 and short side of substrate 12
Not inclined annulus 32 on the basis of 14, helical inductor device 31P has to be inclined on the basis of the long side 13 of substrate 12 and short side 14
Oblique 45 ° of annulus 32.
The high-frequency model of the present embodiment also has the ground via conductor 41 for being connected to earthing potential.Ground via conductor 41
It is arranged between helical inductor device 31P and helical inductor device 31Q adjacent to each other.
Ground via conductor 41 is arranged to extension 33 and the helical form electricity positioned at helical inductor device 31P adjacent to each other
Between the extension 33 of sensor 31Q.
According to above-mentioned structure, the electromagnetic coupling between adjacent helical inductor device 31 can be prevented, and can be with narrow
Spacing configures annulus 32.
Further, it is also possible to from Fig. 5 to the various configurations of the annulus 32 of helical inductor device 31 illustrated in fig. 8 and
Arrangement progress is appropriately combined, to constitute new high-frequency model.Further, it is also possible to using the round and ellipse etc. other than rectangle,
It combines them as the shape of annulus 32 with rectangle.
If summarizing explanation, this embodiment party to the structure of the high-frequency model of embodiments of the present invention 2 as described above
The high-frequency model of formula includes the substrate 12 and multiple helical inductor devices 31 with interarea 12a, multiple helical inductor device
31 settings on the substrate 12, and when overlooking the interarea 12a of substrate 12, have the annulus 32 of the shape annularly extended.
Multiple helical inductor devices 31 include as the helical inductor device 31P of the first inductor and adjacent with helical inductor device 31P
The helical inductor device 31Q as the second inductor of configuration.The annulus 32 of helical inductor device 31P includes as linear
The straight line portion 32m for the first straight line that shape extends.The annulus 32 of helical inductor device 31Q is included in and straight line portion 32m injustice
On capable direction linearly extend and straight line portion 32n as second straight line opposite with straight line portion 32m.
According to the high-frequency model of embodiments of the present invention 2 formed as described above, the overall length of substrate 12 can be shortened, and
And enough insulating properties can be obtained between helical inductor device 31 adjacent to each other.
(embodiment 3)
Fig. 9 is the circuit diagram for showing the high-frequency model of embodiments of the present invention 3.Figure 10 is to show in Fig. 9 to use two point
The perspective view of the high-frequency model for the range that scribing line X is surrounded.
Referring to Fig. 9 and Figure 10, the high-frequency model of present embodiment also has switch in addition to multiple helical inductor devices 31
Element 51.Switch element 51 has the multiple contacts 56 arranged in one direction.
In the present embodiment, multiple helical inductor devices 31 are respectively connected to multiple contacts 56.Helical inductor device 31
As the matching element with irritability for eliminating the capacitive generated between multiple contacts 56.Multiple helical inductor devices 31 are arranged
At the annulus 32 for having the staggered configuration illustrated in the embodiment 1.
With the multiport of switch element 51, the impedance of 52 side of output terminal is in capacitive.In the present embodiment, pass through
Helical inductor device 31 illustrated by embodiment 1 is arranged on the substrate 12 as matching element, can be prevented as in Figure 10
The deterioration of insulating properties between multiple output terminals 52 of the long side arrangement of the shown interarea along substrate 12, and can eliminate defeated
The capacitive of terminal 52 out, to be matched.
In addition, in the present invention, also helical inductor device 31 may not necessarily all be arranged on multiple contacts 56.In addition,
In the present embodiment, although for the structure of high-frequency model illustrated by embodiment 1 is suitable for opening for multi-port structure
The case where closing element is illustrated, but can also be with the structure of various high-frequency models illustrated by equally applicable embodiment 2.
Presently disclosed embodiment should be regarded as be in all respects illustrate and be not intended to limit the scope of the invention by
The scope of the claims indicates, and is not indicated by above description, and the scope of the present invention further includes the model with claim
Enclose being had altered in the equivalent meaning and range.
Industrial practicability
The present invention can be used in built-in Anneta module etc. in the mobile phone.
Label declaration
10 high-frequency models
12 substrates
13 long sides
14 short sides
21,21A, 21B, 21C, 21D, 21E insulating layer
31,31P, 31Q helical inductor device
32 annulus
The straight line portion 32m, 32n
33 extensions
41 ground via conductors
51 switch elements
52 output terminals
56 contacts
Claims (7)
1. a kind of high-frequency model characterized by comprising
Substrate with interarea；And
Multiple inductors, multiple inductor are set to the substrate, and when overlooking the interarea of the substrate, multiple inductance
Device has the annulus of the shape annularly extended,
The multiple inductor includes the second inductor that the first inductor and first inductor are configured adjacently,
The annulus of first inductor includes the first straight line linearly extended,
The annulus of second inductor includes: vertex, the vertex is in the annulus of second inductor
Closest to the first straight line；And second straight line and third straight line portion, the second straight line and third straight line portion with
The first straight line linearly extends on not parallel direction from the vertex, and opposite with the first straight line.
2. high-frequency model as described in claim 1, which is characterized in that
The first straight line and second straight line angle at 45 °.
3. high-frequency model as claimed in claim 1 or 2, which is characterized in that
When overlooking the interarea of the substrate, the multiple inductor is arranged to the annulus and arranges in one direction.
4. high-frequency model as claimed in claim 1 or 2, which is characterized in that
When overlooking the interarea of the substrate, it is cross-shaped along prescribed direction that the multiple inductor is arranged to the annulus
Arrangement.
5. high-frequency model as claimed in claim 1 or 2, which is characterized in that
It is also equipped with wiring, which is set to described in the mode between first inductor and second inductor
Substrate, and connect with earthing potential.
6. high-frequency model as claimed in claim 1 or 2, which is characterized in that
It is also equipped with the switch element with multiple contacts,
First inductor and second inductor are respectively as eliminating the capacitive generated between the multiple contact
With element, it is connect with the multiple contact.
7. high-frequency model as claimed in claim 1 or 2, which is characterized in that
The substrate has the stepped construction that multiple insulating layers are laminated to be formed,
In the substrate from the stacking direction of the multiple insulating layer, the annulus has the shape annularly extended
Shape.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-079402 | 2014-04-08 | ||
| JP2014079402 | 2014-04-08 | ||
| PCT/JP2015/058447 WO2015156101A1 (en) | 2014-04-08 | 2015-03-20 | High frequency module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106134090A CN106134090A (en) | 2016-11-16 |
| CN106134090B true CN106134090B (en) | 2019-01-22 |
Family
ID=54287681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580017775.2A Active CN106134090B (en) | 2014-04-08 | 2015-03-20 | High-frequency model |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6308293B2 (en) |
| KR (1) | KR101848721B1 (en) |
| CN (1) | CN106134090B (en) |
| WO (1) | WO2015156101A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05326270A (en) * | 1992-05-25 | 1993-12-10 | Murata Mfg Co Ltd | Composite inductor part |
| JP2002110422A (en) * | 2000-09-28 | 2002-04-12 | Murata Mfg Co Ltd | Chip coil parts |
| JP2010269215A (en) * | 2009-05-19 | 2010-12-02 | Shibaura Mechatronics Corp | Apparatus for driving piezoelectric element, and coating apparatus |
| CN102694245A (en) * | 2011-03-23 | 2012-09-26 | 株式会社村田制作所 | Antenna device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0522984Y2 (en) * | 1988-10-05 | 1993-06-14 | ||
| WO2007088732A1 (en) | 2006-01-31 | 2007-08-09 | Murata Manufacturing Co., Ltd. | Composite high-frequency components and mobile communication apparatus |
| JP2012095257A (en) * | 2010-09-30 | 2012-05-17 | Nippon Dempa Kogyo Co Ltd | Variable attenuator and variable attenuation device |
-
2015
- 2015-03-20 CN CN201580017775.2A patent/CN106134090B/en active Active
- 2015-03-20 JP JP2016512647A patent/JP6308293B2/en active Active
- 2015-03-20 KR KR1020167022584A patent/KR101848721B1/en active IP Right Grant
- 2015-03-20 WO PCT/JP2015/058447 patent/WO2015156101A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05326270A (en) * | 1992-05-25 | 1993-12-10 | Murata Mfg Co Ltd | Composite inductor part |
| JP2002110422A (en) * | 2000-09-28 | 2002-04-12 | Murata Mfg Co Ltd | Chip coil parts |
| JP2010269215A (en) * | 2009-05-19 | 2010-12-02 | Shibaura Mechatronics Corp | Apparatus for driving piezoelectric element, and coating apparatus |
| CN102694245A (en) * | 2011-03-23 | 2012-09-26 | 株式会社村田制作所 | Antenna device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015156101A1 (en) | 2015-10-15 |
| KR101848721B1 (en) | 2018-04-13 |
| KR20160110991A (en) | 2016-09-23 |
| JPWO2015156101A1 (en) | 2017-04-13 |
| JP6308293B2 (en) | 2018-04-11 |
| CN106134090A (en) | 2016-11-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI376838B (en) | Single-layer metallization and via-less metamaterial structures | |
| CN104821429A (en) | Antenna board | |
| JP6278720B2 (en) | Cell and electromagnetic band gap structure | |
| CN107045648A (en) | Electronic unit | |
| JP6204747B2 (en) | Electromagnetic band gap device and electronic circuit | |
| CN207765615U (en) | A kind of SC frequency ranges dual-passband three-dimensional frequency selection surface | |
| CN105766069B (en) | Multi-layer wire substrate and the probe card for having the multi-layer wire substrate | |
| US9419579B2 (en) | Band pass filter circuit and multilayer band pass filter | |
| JP6224484B2 (en) | Directional coupler and high frequency module | |
| CN106134090B (en) | High-frequency model | |
| CN112740343A (en) | Balanced symmetrical coil | |
| JP5294828B2 (en) | Laminated board | |
| CN206820112U (en) | Anneta module | |
| KR20070046420A (en) | Ultra-wideband band pass filter using low temperature co-fired ceramic | |
| KR20130048707A (en) | Multilayer insulation substrate and method for manufacturing the same | |
| KR100940529B1 (en) | Vertically Turned Metal Line Inductor and Electric Device including the Inductor | |
| CN103974536B (en) | Ceramic multilayer component | |
| JP2020021997A (en) | LC filter | |
| CN109841938A (en) | Multi-layer oriented coupler | |
| KR100660971B1 (en) | Ultra-wideband band pass filter using low temperature co-fired ceramic | |
| JP6735185B2 (en) | Multilayer wiring board and electronic device | |
| JP2008118592A (en) | Filter | |
| CN105680170A (en) | Ltcc antenna | |
| JP2006148736A (en) | Noise filter | |
| JP2012191117A (en) | Lamination type electronic component and electronic component module including the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |