CN106133904B - 嵌入在封装基板中的电感器 - Google Patents

嵌入在封装基板中的电感器 Download PDF

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Publication number
CN106133904B
CN106133904B CN201580016458.9A CN201580016458A CN106133904B CN 106133904 B CN106133904 B CN 106133904B CN 201580016458 A CN201580016458 A CN 201580016458A CN 106133904 B CN106133904 B CN 106133904B
Authority
CN
China
Prior art keywords
inductor
coupled
package substrate
dielectric layer
core layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201580016458.9A
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English (en)
Chinese (zh)
Other versions
CN106133904A (zh
Inventor
S·法泽尔波
C·D·裴恩特
R·D·莱恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
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Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN106133904A publication Critical patent/CN106133904A/zh
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Publication of CN106133904B publication Critical patent/CN106133904B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F17/0013—Printed inductances with stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F17/0013—Printed inductances with stacked layers
    • H01F2017/002—Details of via holes for interconnecting the layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F2017/0066—Printed inductances with a magnetic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/501—Inductive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
CN201580016458.9A 2014-03-28 2015-03-27 嵌入在封装基板中的电感器 Expired - Fee Related CN106133904B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/229,367 2014-03-28
US14/229,367 US10008316B2 (en) 2014-03-28 2014-03-28 Inductor embedded in a package substrate
PCT/US2015/023129 WO2015148996A1 (en) 2014-03-28 2015-03-27 Inductor embedded in a package subtrate

Publications (2)

Publication Number Publication Date
CN106133904A CN106133904A (zh) 2016-11-16
CN106133904B true CN106133904B (zh) 2020-01-10

Family

ID=52815380

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580016458.9A Expired - Fee Related CN106133904B (zh) 2014-03-28 2015-03-27 嵌入在封装基板中的电感器

Country Status (7)

Country Link
US (1) US10008316B2 (enExample)
EP (1) EP3123508B1 (enExample)
JP (1) JP6502378B2 (enExample)
KR (1) KR101971195B1 (enExample)
CN (1) CN106133904B (enExample)
ES (1) ES2895077T3 (enExample)
WO (1) WO2015148996A1 (enExample)

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US9496213B2 (en) * 2015-02-05 2016-11-15 Qualcomm Incorporated Integrated device package comprising a magnetic core inductor with protective ring embedded in a package substrate
EP3257079A4 (en) 2015-02-11 2018-11-21 Chaoyang Semiconductor Jiangyin Technology Co., Ltd. Switched power stage with integrated passive components
KR101933408B1 (ko) * 2015-11-10 2018-12-28 삼성전기 주식회사 전자부품 패키지 및 이를 포함하는 전자기기
WO2017116832A1 (en) * 2015-12-31 2017-07-06 Intel Corporation Micro coil apparatus for inductive compensation in packages and pcb for assemblies with blind and buried vias
US9859357B1 (en) * 2016-07-14 2018-01-02 International Business Machines Corporation Magnetic inductor stacks with multilayer isolation layers
US10283249B2 (en) 2016-09-30 2019-05-07 International Business Machines Corporation Method for fabricating a magnetic material stack
US10923417B2 (en) 2017-04-26 2021-02-16 Taiwan Semiconductor Manufacturing Company Limited Integrated fan-out package with 3D magnetic core inductor
US11158448B2 (en) 2018-06-14 2021-10-26 Taiwan Semiconductor Manufacturing Company, Ltd. Packaging layer inductor
KR102678311B1 (ko) * 2018-08-30 2024-06-25 삼성전자주식회사 패키지 볼을 갖는 반도체 패키지를 포함하는 전자 소자
US11640968B2 (en) * 2018-11-06 2023-05-02 Texas Instruments Incorporated Inductor on microelectronic die
CN113284880A (zh) * 2021-04-01 2021-08-20 日月光半导体制造股份有限公司 基板内连线结构
EP4093164A1 (en) * 2021-05-18 2022-11-23 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Component carrier with magnetic element, magnetic inlay, and manufacturing method
CN117059600A (zh) * 2022-05-06 2023-11-14 华为技术有限公司 基板、封装结构及电子设备
US12518908B2 (en) * 2024-01-31 2026-01-06 Avago Technologies International Sales Pte. Limited Systems and methods for integrating inductors within printed circuit boards

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6177732B1 (en) * 1999-05-27 2001-01-23 Intel Corporation Multi-layer organic land grid array to minimize via inductance
CN1938794A (zh) * 2004-03-26 2007-03-28 哈里公司 陶瓷衬底中的嵌入式环芯变压器
CN102918608A (zh) * 2010-06-01 2013-02-06 高通股份有限公司 高电阻衬底中的具有可编程性的穿通孔电感器或变压器

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US4757295A (en) * 1987-09-16 1988-07-12 Avco Research Laboratory, Inc. Transmission line pulsed transformer
JPH06151185A (ja) * 1992-11-09 1994-05-31 Matsushita Electric Works Ltd 平面型インダクタンス素子
JP2002100733A (ja) * 2000-09-21 2002-04-05 Nec Corp 高周波集積回路装置
US7253497B2 (en) 2003-07-02 2007-08-07 Lsi Corporation Integrated circuit with inductor having horizontal magnetic flux lines
TWI245592B (en) 2004-01-12 2005-12-11 Advanced Semiconductor Eng Circuit substrate
US7227247B2 (en) * 2005-02-16 2007-06-05 Intel Corporation IC package with signal land pads
US20060220773A1 (en) * 2005-03-31 2006-10-05 Jun Su Spiral transformers and associated methods of operation
US7474539B2 (en) * 2005-04-11 2009-01-06 Intel Corporation Inductor
US7907043B2 (en) * 2005-11-30 2011-03-15 Ryutaro Mori Planar inductor
US7843302B2 (en) * 2006-05-08 2010-11-30 Ibiden Co., Ltd. Inductor and electric power supply using it
US7649265B2 (en) 2006-09-29 2010-01-19 Intel Corporation Micro-via structure design for high performance integrated circuits
US8222714B2 (en) 2007-02-05 2012-07-17 Rambus Inc. Semiconductor package with embedded spiral inductor
TWI347616B (en) * 2007-03-22 2011-08-21 Ind Tech Res Inst Inductor devices
JP2008277485A (ja) * 2007-04-27 2008-11-13 Fuji Electric Device Technology Co Ltd トランスユニットおよび電力変換装置
US7733207B2 (en) * 2007-05-31 2010-06-08 Electronics And Telecommunications Research Institute Vertically formed inductor and electronic device having the same
JP2009055019A (ja) * 2007-07-30 2009-03-12 Renesas Technology Corp 多層基板、半導体集積回路用パッケージ基板及び半導体集積回路実装用プリント配線板
US20090085155A1 (en) 2007-09-28 2009-04-02 Bailey Mark J Method and apparatus for package-to-board impedance matching for high speed integrated circuits
WO2010035401A1 (ja) 2008-09-26 2010-04-01 パナソニック株式会社 電子デバイス及びその製造方法
US8067816B2 (en) 2009-02-03 2011-11-29 Qualcomm Incorporated Techniques for placement of active and passive devices within a chip
US9048112B2 (en) * 2010-06-29 2015-06-02 Qualcomm Incorporated Integrated voltage regulator with embedded passive device(s) for a stacked IC
US8723048B2 (en) * 2010-11-09 2014-05-13 Broadcom Corporation Three-dimensional coiling via structure for impedance tuning of impedance discontinuity
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Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US6177732B1 (en) * 1999-05-27 2001-01-23 Intel Corporation Multi-layer organic land grid array to minimize via inductance
CN1938794A (zh) * 2004-03-26 2007-03-28 哈里公司 陶瓷衬底中的嵌入式环芯变压器
CN102918608A (zh) * 2010-06-01 2013-02-06 高通股份有限公司 高电阻衬底中的具有可编程性的穿通孔电感器或变压器

Also Published As

Publication number Publication date
EP3123508A1 (en) 2017-02-01
CN106133904A (zh) 2016-11-16
ES2895077T3 (es) 2022-02-17
US20150279545A1 (en) 2015-10-01
JP6502378B2 (ja) 2019-04-17
KR20160138411A (ko) 2016-12-05
US10008316B2 (en) 2018-06-26
EP3123508B1 (en) 2021-09-29
WO2015148996A1 (en) 2015-10-01
JP2017511602A (ja) 2017-04-20
KR101971195B1 (ko) 2019-08-13

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