CN106098920A - 一种半导体发光单元的散热结构 - Google Patents
一种半导体发光单元的散热结构 Download PDFInfo
- Publication number
- CN106098920A CN106098920A CN201610606385.5A CN201610606385A CN106098920A CN 106098920 A CN106098920 A CN 106098920A CN 201610606385 A CN201610606385 A CN 201610606385A CN 106098920 A CN106098920 A CN 106098920A
- Authority
- CN
- China
- Prior art keywords
- copper
- ring
- semiconductor light
- light emitting
- emitting unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 98
- 229910052802 copper Inorganic materials 0.000 claims abstract description 73
- 239000010949 copper Substances 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 210000003205 muscle Anatomy 0.000 claims abstract description 26
- 239000003292 glue Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000000919 ceramic Substances 0.000 claims abstract description 14
- 230000017525 heat dissipation Effects 0.000 claims abstract description 10
- 238000009413 insulation Methods 0.000 claims abstract description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 239000008187 granular material Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 238000004020 luminiscence type Methods 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 230000005855 radiation Effects 0.000 description 8
- 239000004568 cement Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610606385.5A CN106098920B (zh) | 2016-07-29 | 2016-07-29 | 一种半导体发光单元的散热结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610606385.5A CN106098920B (zh) | 2016-07-29 | 2016-07-29 | 一种半导体发光单元的散热结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106098920A true CN106098920A (zh) | 2016-11-09 |
CN106098920B CN106098920B (zh) | 2018-08-31 |
Family
ID=57478493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610606385.5A Active CN106098920B (zh) | 2016-07-29 | 2016-07-29 | 一种半导体发光单元的散热结构 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106098920B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106505051A (zh) * | 2016-11-22 | 2017-03-15 | 南通沃特光电科技有限公司 | 一种具有石墨烯的功率器件 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202159709U (zh) * | 2011-07-20 | 2012-03-07 | 中国科学院上海硅酸盐研究所 | 一种低温共烧陶瓷led基板结构 |
CN102723425A (zh) * | 2012-07-10 | 2012-10-10 | 电子科技大学 | 一种led荧光粉涂层的集成制备方法 |
CN203277503U (zh) * | 2013-04-09 | 2013-11-06 | 谢基钰 | 散热用的鳍片结构及电子元件的散热装置 |
US20150233570A1 (en) * | 2014-02-18 | 2015-08-20 | Kabushiki Kaisha Toshiba | Illuminating device |
-
2016
- 2016-07-29 CN CN201610606385.5A patent/CN106098920B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202159709U (zh) * | 2011-07-20 | 2012-03-07 | 中国科学院上海硅酸盐研究所 | 一种低温共烧陶瓷led基板结构 |
CN102723425A (zh) * | 2012-07-10 | 2012-10-10 | 电子科技大学 | 一种led荧光粉涂层的集成制备方法 |
CN203277503U (zh) * | 2013-04-09 | 2013-11-06 | 谢基钰 | 散热用的鳍片结构及电子元件的散热装置 |
US20150233570A1 (en) * | 2014-02-18 | 2015-08-20 | Kabushiki Kaisha Toshiba | Illuminating device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106505051A (zh) * | 2016-11-22 | 2017-03-15 | 南通沃特光电科技有限公司 | 一种具有石墨烯的功率器件 |
CN106505051B (zh) * | 2016-11-22 | 2019-02-05 | 南通壹选工业设计有限公司 | 一种具有石墨烯的功率器件 |
Also Published As
Publication number | Publication date |
---|---|
CN106098920B (zh) | 2018-08-31 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20180723 Address after: 200000 2 2 North Village Road, Zhelin Town, Fengxian District, Shanghai Applicant after: Shanghai he Hong electronic Polytron Technologies Inc Address before: 226300 266 Century Avenue, Nantong hi tech Zone, Nantong, Jiangsu Applicant before: Wang Hanqing |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Zhu Liming Inventor after: Wei Wei Inventor after: Wang Hanqing Inventor before: Wang Hanqing |