CN106505051B - 一种具有石墨烯的功率器件 - Google Patents
一种具有石墨烯的功率器件 Download PDFInfo
- Publication number
- CN106505051B CN106505051B CN201611030451.5A CN201611030451A CN106505051B CN 106505051 B CN106505051 B CN 106505051B CN 201611030451 A CN201611030451 A CN 201611030451A CN 106505051 B CN106505051 B CN 106505051B
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- Prior art keywords
- graphene
- ring
- heat
- radiating substrate
- power device
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 103
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 75
- 230000017525 heat dissipation Effects 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000000919 ceramic Substances 0.000 claims abstract description 15
- 239000011347 resin Substances 0.000 claims abstract description 10
- 229920005989 resin Polymers 0.000 claims abstract description 10
- 239000003292 glue Substances 0.000 claims abstract description 8
- 238000009413 insulation Methods 0.000 claims abstract description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 238000003763 carbonization Methods 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 239000002210 silicon-based material Substances 0.000 claims 1
- 210000003205 muscle Anatomy 0.000 description 5
- 150000001336 alkenes Chemical group 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000004575 stone Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611030451.5A CN106505051B (zh) | 2016-11-22 | 2016-11-22 | 一种具有石墨烯的功率器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611030451.5A CN106505051B (zh) | 2016-11-22 | 2016-11-22 | 一种具有石墨烯的功率器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106505051A CN106505051A (zh) | 2017-03-15 |
CN106505051B true CN106505051B (zh) | 2019-02-05 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201611030451.5A Active CN106505051B (zh) | 2016-11-22 | 2016-11-22 | 一种具有石墨烯的功率器件 |
Country Status (1)
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CN (1) | CN106505051B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111092062B (zh) * | 2018-10-24 | 2021-06-08 | 欣兴电子股份有限公司 | 晶片封装结构及其制造方法 |
CN109439291B (zh) * | 2018-11-23 | 2020-12-22 | 大同新成新材料股份有限公司 | 一种石墨板及其制造方法 |
CN112382921A (zh) * | 2020-10-22 | 2021-02-19 | 山东大学 | 一种可改善半导体激光芯片热传导效率的热沉及制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102368532A (zh) * | 2011-06-03 | 2012-03-07 | 王双喜 | 一种带金属散热片的led封装结构 |
CN202384394U (zh) * | 2011-12-29 | 2012-08-15 | 高新低碳能源科技股份有限公司 | 一种提高led光效的散热陶瓷基板 |
CN106098920A (zh) * | 2016-07-29 | 2016-11-09 | 王汉清 | 一种半导体发光单元的散热结构 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI482244B (zh) * | 2012-11-19 | 2015-04-21 | Ind Tech Res Inst | 熱交換器以及半導體模組 |
-
2016
- 2016-11-22 CN CN201611030451.5A patent/CN106505051B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102368532A (zh) * | 2011-06-03 | 2012-03-07 | 王双喜 | 一种带金属散热片的led封装结构 |
CN202384394U (zh) * | 2011-12-29 | 2012-08-15 | 高新低碳能源科技股份有限公司 | 一种提高led光效的散热陶瓷基板 |
CN106098920A (zh) * | 2016-07-29 | 2016-11-09 | 王汉清 | 一种半导体发光单元的散热结构 |
Also Published As
Publication number | Publication date |
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CN106505051A (zh) | 2017-03-15 |
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Effective date of registration: 20181226 Address after: 226600 No. 8, Xiao Xing Avenue, Chengdong Town, Haian City, Nantong, Jiangsu. Applicant after: NANTONG YIXUAN INDUSTRIAL DESIGN Co.,Ltd. Address before: 226300 window of science and technology, No. 266, New Century Avenue, Nantong hi tech Zone, Nantong, Jiangsu Applicant before: NANTONG WOTE OPTOELECTRONICS TECHNOLOGY CO.,LTD. |
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Effective date of registration: 20221228 Address after: 256599 East 600m south of the intersection of Yangao Road X030 and Bohua Road, Jingbo Industrial Park, Boxing County Economic Development Zone, Binzhou City, Shandong Province Patentee after: Boxing County Xingye Logistics Co.,Ltd. Address before: 226600 No. 8, Xiao Xing Avenue, Chengdong Town, Haian City, Nantong, Jiangsu. Patentee before: NANTONG YIXUAN INDUSTRIAL DESIGN Co.,Ltd. |
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Effective date of registration: 20230911 Address after: Room 336, Building 1, the Taihu Lake Laboratory, No. 1040, Zhongxing Avenue, Balidian Town, Wuxing District, Huzhou City, Zhejiang Province, 313000 Patentee after: Huzhou Jixin Semiconductor Technology Co.,Ltd. Address before: 256599 East 600m south of the intersection of Yangao Road X030 and Bohua Road, Jingbo Industrial Park, Boxing County Economic Development Zone, Binzhou City, Shandong Province Patentee before: Boxing County Xingye Logistics Co.,Ltd. |