CN106098673A - A kind of for IC chip self-distruction structure - Google Patents
A kind of for IC chip self-distruction structure Download PDFInfo
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- CN106098673A CN106098673A CN201610427727.7A CN201610427727A CN106098673A CN 106098673 A CN106098673 A CN 106098673A CN 201610427727 A CN201610427727 A CN 201610427727A CN 106098673 A CN106098673 A CN 106098673A
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Abstract
This disclosure of the invention is a kind of for IC chip self-distruction structure, structure includes: chip, is arranged on the metal at the roundabout groove of chip back or front, the metal being arranged in groove, groove head and the tail two ends and is provided with electrode, described groove spreads all over the whole non-active area of chip front side or the back side, the total metal Young's modulus of described groove is more than 70GPa, thermal coefficient of expansion is more than 5 times of silicon, it is characterised in that groove both sides are periodically provided with the V-type wedge angle of outwardly convex；The V-type wedge angle of adjacent two sections of groove outwardly convexs in groove back haul, the top of the horn is relative and misaligned.Having structure and technique and want simple, safety, stability are higher, the advantage that stress is concentrated.
Description
Technical field
The invention belongs to information security field, refer to the method and structure of a kind of IC chip self-destruction.
Background technology
The development of microelectric technique makes to enrich, the information of magnanimity can be cured in the middle of one piece of small chip, and
The value of information is often much larger than the value of chip piece.The miniaturization of electronic product, portability also tend to make them be easier to
Lose.The equipment such as the mobile phone of individual, USB flash disk have often stored privacy information, once lose and the life of oneself may be caused shadow
Ring；In enterprise, one piece of chip having core technology once falls in competitor's hands, and competitor is permissible by being reversely easy for
Steal the core technology of related chip, enterprise may be allowed to get into trouble；The classified information of the department such as government, enterprise is general all
It is stored in hard disk, FLASH memory, once loses and will cause immeasurable loss；On battlefield, our electronic equipment
Fall into and enemy's hands is likely to cause the relevant information of battle plan reveal, cause the harm that cannot make up.In order to avoid core
Relevant confidential information in sheet falls in his staff, needs to introduce self-destruction technology in the chips.
Impeding a future disaster to allow chip thoroughly destroy, current self-destruction method has chemical attack, containing agent causing blast
Make chip fragmentation etc..Chemical corrosion method needs specific container storage chemical reagent, and this can increase the volume of self-desttruction equipment, also
Adding the difficulty manufacturing this device, on the other hand these chemical reagent do not ensure that stablizing of long-time interior chemical, and
And chemical reagent once reveals and may work the mischief human body.Containing can agent be generally adopted by thermite, porous silicon (and oxidation
Agent mixes) etc..Prepare thermite to need, by nano oxygen agent and nanometer aluminium powder long agitation, to make them be sufficiently mixed.Meanwhile,
In order to reduce triggering temperature, typically also need to add the inflammable and explosive substances such as solid-state gasoline, sulfur powder in thermite.Afterwards by aluminothermy
Agent titration is spun on the appointment region of chip.Make containing agent problems can be equally existed with porous silicon, suitable in order to obtain
Trigger temperature, need to prepare pore size, porosity meets the porous silicon of requirement.Additionally oxidant is penetrated in porous silicon,
Needs are gone through and are repeatedly titrated oxidant, air-dry, then titrate, air-dry such step.Manufacturing process compares labor intensive, effect
Rate is the lowest.It addition, above-mentioned thermite, oxidant belong to inflammable and explosive substances, blast can be caused when high temperature, and oxidant is such as
NaClO4、CdClO4Blast it is also possible to when being clashed.
The premise of chip self-destroying is the normal work that self-desttruction equipment does not affect chip, does not affect the manufacturing process of chip,
Self-destruction more potential safety hazard can never will not be there is in the person when being not received by self-destruction signal.And self-destruction method mentioned above
There is potential safety hazard with being difficult to avoid that, on manufacturing, there is also relatively large deviation with traditional silicon technique.Additionally it is very easy to by the external world
The impact of environmental change, the such as change of temperature, humidity easily cause chemical reagent and the change containing energy agent chemical property, at core
Sheet falls or is likely to when having the highest acceleration to cause containing can agent self-destruction.Hold concurrently it is thus desirable to a kind of with silicon technology
Hold, do not affect chip and normally work, the chip self-destroying method being affected by the external environment less.
The theoretical critical fire area fracture strength of body silicon is about 4-7GPa, but Si less than 700 DEG C is being a kind of fragile material, its Poisson
Ratio is v=0.27, i.e. has risk of breakage under 4% strain.And, material is usually present various defect or micro-crack, this
The failure condition that can make body silicon is substantially reduced, and small bending (200-700MPa) can cause silicon chip to rupture.Because monocrystal silicon
111} face interplanar distance is maximum, and atomic bond density is minimum, for its cleavage surface, body silicon along its crackle of cleavage surface extension than
Much easier along other face.For the These characteristics of monocrystal silicon, region of stress concentration can be artificially introduced on chip, rationally
Utilizing cleavage surface, the fragmentation region making chip while reducing silicon chip fracture difficulty is controlled.
Summary of the invention
The present invention is directed to manufacture present in background technology chips destruction technology difficulty, reliability, safety are low etc. asks
Topic, utilizing silicon chip is the feature of fragility, easy fracture, it is proposed that etch deep trouth on silicon chip, fill in groove special metal or
Fill thermal expansion agent after first filler metal, utilize the thermal coefficient of expansion of silicon significantly less than this of this special metal and thermal expansion agent
Feature, makes metal electrification produce rapidly metal and extender thermal expansion immediately while Joule heat, and the thermal expansion of silicon chip is permissible
Ignore, thus in silicon chip, introduce bigger stress and displacement, make silicon chip rupture.Otherwise for monocrystal silicon along cleavage
The feature that face is more easily broken off, introduces region of stress concentration, can reduce the difficulty of silicon chip fracture in cleavage surface direction.
The technical scheme is that a kind of for IC chip self-distruction structure, this structure includes: chip, be arranged at
The roundabout groove of chip back or front, the metal being arranged in groove, groove head and the tail two ends metal on be provided with electrode, institute
Stating groove and spread all over the whole non-active area of chip front side or the back side, the total metal Young's modulus of described groove is more than 70GPa, and heat is swollen
Swollen coefficient is more than 5 times of silicon, it is characterised in that groove both sides are periodically provided with the V-type wedge angle of outwardly convex；Groove is roundabout
During the V-type wedge angle of adjacent two sections of groove outwardly convexs, the top of the horn is relative and misaligned.
Further, described groove back haul is provided with between the V-type wedge angle of adjacent two sections of groove outwardly convexs narrow deeply
Groove, the sidewall of this narrow deep trouth is parallel with the cleavage surface of chip.
Further, bottom described roundabout groove, first thermal expansion agent is set, is further filled with metal.
Further, described V-type wedge angle angle is 90 °～120 °, adjacent two sections of groove outwardly convexs in groove back haul
V-type wedge angle distance less than or equal to 25 μm.
Further, described for IC chip self-distruction structure during self-destruction two ends metal electrode load pulses
Formula voltage.
The invention have the benefit that
1, the present invention can make filler metal be warming up to 200 to 300 degrees Celsius at short notice, in this temperature range,
Metal still has higher Young's modulus, and volumetric expansion amount is the biggest, makes silicon chip create bigger amount of bow, to silicon
Sheet introduces considerable stress.
2, being to make chip makes physical rupture equally, the present invention is with compared with energy chip, and structure and technique want simple, safety
Property, stability are higher.
3, in chip, sharp corner can produce stress concentration, and the shape counter stress concentration effect of wedge angle can produce significantly
Impact.
4, wedge angle can make stress superposition further on the basis of stress is concentrated to the structure of wedge angle, makes to take the lead at this producing
Raw crackle, beneficially chip fracture.
5, stress raiser is made to be positioned in the cleavage surface of monocrystal silicon, beneficially the fracture of silicon chip and cracks can spread.
6, the introducing of V-arrangement wedge angle and the diagonal angle, angle of wedge angle and wedge angle process and can essentially control local location stress
The position that size and maximum stress occur, further can be with control chip destroyed area so that destroying number of tiles.
Accompanying drawing explanation
Fig. 1 is substrate when being<110>crystal orientation, the angle situation of cleavage surface and silicon chip surface.
Fig. 2 is substrate when being<100>crystal orientation, the angle situation of cleavage surface and silicon chip surface.
Fig. 3 is the front view of embodiment four, it is characterized in that on the basis of embodiment one, increases V-arrangement point in deep trouth both sides
Angle.
Fig. 4 is embodiment one, embodiment four, the profile of embodiment five, and its packing material is metallic zinc.
Fig. 5 is embodiment one, the front view of embodiment two.
Fig. 6 is the profile of embodiment two, and its packing material is metallic zinc and microspheres.
Fig. 7 is the profile of embodiment three, and wherein the side of groove 5 is { 111} crystal orientation.This structure is on the basis of embodiment one
On etched narrow deep trouth, its objective is to make crackle to extend along cleavage surface.Use this kind of structural requirement silicon chip for<110>crystal orientation.
Fig. 8 is the rear elevation view of embodiment three, it is characterized in that on the basis of embodiment one, etches narrow deeply on silicon chip
Groove, makes the cleavage surface that side is silicon chip of narrow deep trouth.
Fig. 9 be in Fig. 3 a point to the stress envelope of b point.
Figure 10 is the rear elevation view of embodiment five, it is characterized in that, at the figure changing filler metal, making silicon chip at deep trouth
Corner produce stress concentration point.
Figure 11 is the profile of embodiment six, and its packing material is metallic zinc, and self-distruction structure and chip operation region are same
Simultaneously.
Wherein, filler metal 1, chip 2, electrode 3, thermal expansion agent 4, narrow deep trouth 5, chip operation district 6, V-arrangement wedge angle 7, turn
Angle 8.
Detailed description of the invention
As optional technical scheme, metal can be further filled with after first inserting thermal expansion agent before filler metal.Some
Material phase transformation after reaching uniform temperature (solid-state, liquid, gaseous state mutually convert or solid-state first order phase change), these material phase transformations
After can produce the change of volume.Microspheres (Thermally Expandable Microspheres) is that a clock is the most micro-
Little spheroidal particle, it is outside be air-tightness good thermoplasticity spheroid, enclosed inside low boiling point hydrocarbon, with magnesium hydroxide
(Mg (OH) 2) is dispersant, and acrylonitrile (AN) and methyl methacrylate (MMA) are main polymerisation monomer, azo-bis-isobutyl cyanide
(AIBN) being initiator, trimethylolpropane trimethacrylate (TMPTA) is cross-linking agent, utilizes suspension polymerization to prepare.Heat is swollen
Swollen microsphere is held essentially constant in the front volume reaching its critical temperature, becomes gas mutually higher than the hydro carbons in spheroid after critical temperature
State, its volume meeting instantaneous expansion tens times, the plastic material outside spheroid can maintain the form after change in volume.Additionally heat
The critical temperature of expandable microspheres can be controlled well by preparation technology.The metal the filled intensification that is used for being energized makes thermal expansion micro-
Ball reaches its critical temperature.
As optional technical scheme, voltage added on metal can be impulse type voltage, and on the one hand this can be avoided
Metal because the too high fusing of local location temperature cause open circuit, on the other hand impulse type voltage can introduce pulsating stress, because of
And crack Propagation can be produced.
Embodiment one
As shown in Figure 4, rear elevation view is as shown in Figure 5 for the section of the present embodiment.Including metallic zinc 1, silicon chip 2, electrode 3,
Chip operation district 6.In the present embodiment, front side of silicon wafer is the working region of chip, and the back side is the apparatus for destroying of chip.Carve overleaf
Lose deep trouth, filler metal zinc in groove, finally electrode is drawn out in the control circuit of chip.In the present embodiment, die size is
1cm × 1cm × 350 μm (350 μm be conventional die thinning after thickness, lower with), the width of groove is 100 μm, and thickness is 75 μm,
Distance between groove and groove is 100 μm.When reaching trigger condition, control circuit adds voltage to electrode.In order to avoid filling
Metal local location because high temperature fuse, added voltage can be impulse type voltage.When electrode voltage is 3V, metal
Zinc produces Joule heat thermal expansion, and this self-desttruction equipment was warming up to 300 degrees Celsius within 15 second time, the now maximum deflection of silicon chip
Amount is 240 μm, and below metal, the stress of silicon is 400MPa, and the edge of the local location of silicon such as metal and the stress of sharp corner silicon are about
For 1GPa.
Embodiment two
As shown in Figure 6, rear elevation view is as shown in Figure 5 for the profile of the present embodiment.Including metallic copper 1, silicon chip 2, electrode
3, microspheres 4, chip operation district 6.Etch deep trouth at chip back equally, the most first fill microspheres, refill
Metallic copper, is finally drawn out to electrode in control circuit.In the present embodiment, die size is 1cm × 1cm × 350 μm, groove depth 100
μm, wide 100 μm, separation 100 μm, microspheres thickness 50 μm, metallic copper thickness 50 μm.After meeting trigger condition, metal
Copper energising produces Joule heat, and when electrode institute making alive is 3V, temperature can reach the stagnation temperature of microspheres in 10 seconds
Degree, now microspheres volume can expand rapidly tens times, and chip makes physical can be made to destroy.
Embodiment three
The profile of the present embodiment as it is shown in fig. 7, rear elevation view as shown in Figure 8.Including metallic aluminium 1, silicon chip 2, electrode
3, narrow deep trouth 5, chip operation district 6.The present embodiment the most first etches deep trouth, filler metal aluminum in groove, then etches narrow deep trouth
5, extraction electrode.In the present embodiment, die size is 1cm × 1cm × 350 μm, and the width of bonding jumper is 100 μm, and thickness is 75 μ
M, the distance between bonding jumper is 100 μm.When silicon chip crystal orientation is<110>, adjusts etching direction and can make the section of narrow deep trouth 5
For { 111} face.When electrode voltage is 3V, temperature can rise to 300 DEG C in 10 seconds, and silicon chip is curved because of metallic aluminium thermal expansion stress
Song, amount of bow is up to 240um, and in silicon chip, stress reaches 400MPa.At deep trouth, stress is concentrated, and the side of groove depth direction and cleavage surface
To identical, crackle so can be made to extend along cleavage surface, greatly reduce the difficulty of silicon chip fracture.
Embodiment four
As shown in Figure 4, rear elevation view is as shown in Figure 3 for the profile of the present embodiment.Including metallic zinc 1, silicon chip 2, electrode
3, chip operation district 6.The present embodiment adds V-arrangement wedge angle on the both sides of Ke Shi groove on the basis of embodiment one.This enforcement
In example, the size of silicon chip is 1cm × 1cm × 350 μm, and the width of groove is 100 μm, and thickness is 75 μm, and the distance between groove and groove is
100 μm, the angle of the V-arrangement wedge angle at groove edge is 90 °, and wedge angle is 20um with the distance of wedge angle.Receive self-destruction signal, electrode
The rapid thermal expansion of metallic zinc after energising, introduces stress in chip, can produce stress at V-arrangement sharp corner and concentrate, wedge angle and wedge angle
Relatively can make Stress superposition, thus the stress of pointed tips is much larger than the stress of other positions in chip, can take the lead in producing at this
Crackle.When electrode institute making alive is 3V, self-desttruction equipment was warming up to 300 DEG C in 15 seconds, and metallic zinc is because thermal expansion is in chip
Introduce stress.Fig. 9 is that in Fig. 3, a point is to the stress envelope of b point, and in silicon chip, the stress of V-arrangement sharp corner is 2.8GPa, and in silicon
The stress in other regions is less than 500MPa.The most on the one hand can significantly increase local location stress thus
Reduce silicon chip fracture difficulty, on the other hand can control the region of fracture of silicon chip.
Embodiment five
As shown in Figure 4, the figure of filler metal is as shown in Figure 10 for the profile of the present embodiment.Including metallic zinc 1, silicon chip 2,
Electrode 3, chip operation district 6.The present embodiment changes the shape of the groove of etching on the basis of embodiment one.In the present embodiment,
The size of silicon chip is 1cm × 1cm × 350 μm, and the width of bonding jumper is 100 μm, and thickness is 75 μm, and the distance between bonding jumper is
100μm.Use this figure that metallic zinc can be made identical with the swell increment in y direction in x direction, thus make metallic zinc around the corner
The stress in the x direction of (in Figure 10 shown in 8) is equal to the stress in y direction, and the combined stress of this point is maximum in this case.Electrode connects
Metallic zinc can produce behind energising source bigger electric current, cause metal to be brought rapidly up thermal expansion.When electrode voltage is 3V, at 15 seconds
Inside being warming up to 300 DEG C, and the stress of corner's silicon chip is apparently higher than other positions in silicon chip, crackle can germinate at this.
Embodiment six
As shown in figure 11, self-desttruction equipment region front view is as shown in Figure 3 for the profile of the present embodiment.Including metallic zinc, silicon
Sheet 2, electrode 3, chip operation district 6, V-arrangement wedge angle 7.In embodiment discussed above, self-distruction structure is all at the back of the body in chip operation district
Face, in the present embodiment, self-distruction structure and chip operation region are at the same face, and self-distruction structure and chip need the region phase of self-destruction
Adjacent.Etching deep trouth on this side, region, deposit metallic zinc, extraction electrode and control circuit complete interconnection.Groove in the present embodiment
Width and the degree of depth can adjust according to the size of silicon chip.For the silicon chip of 1cm × 1cm × 350 μm, its degree of depth is 100 μm, thick
Degree is 75 μm, and the distance between groove and groove is 100 μm.After triggering, metal electrification produces Joule heat thermal expansion.Electrode voltage is
During 3V, self-distruction structure was warming up to 300 degrees Celsius in 15 seconds.Because there being a lot of groove above self-destruction region, much should introduce
Power centrostigma, silicon chip is fragility at such a temperature, and the least amount of bow i.e. can make chip fracture.Cracks can spread is to chip operation district
Territory, chip will work, complete self-destruction.
The present invention introduces stress by some thermal expansion metal, by etching narrow deep trouth along cleavage surface, utilize the V of metal
Shape wedge angle produces the medium method of stress collection and reduces the fracture difficulty of silicon chip, and chip can be made first to crack at stress raiser
And then make chip fracture.The present invention utilizes the metal filling different graphic, and the methods such as chip cutting, filling extender are reached right
The controlled destruction of chip, has destruction earthquake intensity low, stability high.
Claims (5)
1. for an IC chip self-distruction structure, this structure includes: chip, be arranged at chip back or front is roundabout
Groove, the metal being arranged in groove, groove head and the tail two ends metal on be provided with electrode, described groove spread all over chip front side or
Whole non-active area, the back side, the total metal Young's modulus of described groove is more than 70GPa, and thermal coefficient of expansion is more than 5 times of silicon,
It is characterized in that groove both sides are periodically provided with the V-type wedge angle of outwardly convex；In groove back haul, adjacent two sections of grooves are outside
Protruding V-type wedge angle, the top of the horn is relative and misaligned.
2. say that the one as described in 1 is for IC chip self-distruction structure such as claim, it is characterised in that described groove is roundabout
During adjacent two sections of groove outwardly convexs V-type wedge angle between be provided with narrow deep trouth, the sidewall of this narrow deep trouth and the cleavage of chip
Face is parallel.
3. say that the one as described in 1 is for IC chip self-distruction structure such as claim, it is characterised in that described roundabout leading to
First trench bottom arranges thermal expansion agent, is further filled with metal.
4. say that the one as described in 1 is for IC chip self-distruction structure such as claim, it is characterised in that described V-type wedge angle presss from both sides
Angle is 90 °～120 °, and in groove back haul, the V-type wedge angle distance of adjacent two sections of groove outwardly convexs is less than or equal to 25 μm.
5. say that the one as described in 1 is for IC chip self-distruction structure such as claim, it is characterised in that described for integrated
Circuit chip self-distruction structure is two ends metal electrode load pulses formula voltage during self-destruction.
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| CN201610427727.7A CN106098673B (en) | 2016-06-14 | 2016-06-14 | One kind is used for IC chip self-distruction structure |
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| CN201610427727.7A CN106098673B (en) | 2016-06-14 | 2016-06-14 | One kind is used for IC chip self-distruction structure |
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Cited By (9)
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| CN108213036A (en) * | 2017-12-04 | 2018-06-29 | 中国电子科技集团公司第三十研究所 | A kind of circuit board emergent physical apparatus for destroying and implementation method |
| CN110010554A (en) * | 2019-03-26 | 2019-07-12 | 电子科技大学 | A kind of physics self-destruction device encapsulation structure based on water-absorbing resin |
| CN111143901A (en) * | 2019-12-31 | 2020-05-12 | 湖南博远翔电子科技有限公司 | Dual self-destruction device of chip |
| WO2020146994A1 (en) * | 2019-01-15 | 2020-07-23 | 深圳市汇顶科技股份有限公司 | Chip and manufacturing method therefor |
| CN112213969A (en) * | 2020-06-01 | 2021-01-12 | 肖安南 | Intelligent auxiliary law enforcement management auxiliary system based on military internet of things |
| CN112786539A (en) * | 2020-11-19 | 2021-05-11 | 四川大学 | Array-type-pore-channel-based secondary excitation self-destruction chip and preparation method thereof |
| GB2589131A (en) * | 2019-11-22 | 2021-05-26 | Continental Automotive Systems Srl | Circuit board with self-destruction mechanism |
| CN113826049A (en) * | 2019-09-20 | 2021-12-21 | 百达翡丽日内瓦公司 | Method for manufacturing a timepiece spring from a single crystal material and timepiece spring obtained by this method |
| CN114347282A (en) * | 2022-01-18 | 2022-04-15 | 常州时创能源股份有限公司 | Silicon wafer preparation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108213036A (en) * | 2017-12-04 | 2018-06-29 | 中国电子科技集团公司第三十研究所 | A kind of circuit board emergent physical apparatus for destroying and implementation method |
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| CN110010554A (en) * | 2019-03-26 | 2019-07-12 | 电子科技大学 | A kind of physics self-destruction device encapsulation structure based on water-absorbing resin |
| CN113826049B (en) * | 2019-09-20 | 2024-03-19 | 百达翡丽日内瓦公司 | Method for manufacturing a timepiece spring from a monocrystalline material and timepiece spring obtained by this method |
| CN113826049A (en) * | 2019-09-20 | 2021-12-21 | 百达翡丽日内瓦公司 | Method for manufacturing a timepiece spring from a single crystal material and timepiece spring obtained by this method |
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| CN112213969A (en) * | 2020-06-01 | 2021-01-12 | 肖安南 | Intelligent auxiliary law enforcement management auxiliary system based on military internet of things |
| CN112213969B (en) * | 2020-06-01 | 2024-05-31 | 广州云利数码科技有限公司 | Intelligent auxiliary law enforcement management auxiliary system based on military Internet of things |
| CN112786539A (en) * | 2020-11-19 | 2021-05-11 | 四川大学 | Array-type-pore-channel-based secondary excitation self-destruction chip and preparation method thereof |
| CN112786539B (en) * | 2020-11-19 | 2023-05-09 | 四川大学 | Two-stage excitation self-destruction chip based on array pore canal and preparation method thereof |
| CN114347282A (en) * | 2022-01-18 | 2022-04-15 | 常州时创能源股份有限公司 | Silicon wafer preparation method |
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